公开(公告)号：US11145689B2

公开(公告)日：2021-10-12

申请号：US16203709

申请日：2018-11-29

申请人： Cree, Inc.

发明人： Nikolas Hall ,  Derek Miller ,  Anoop Mathew ,  Colin Blakely ,  Luis Breva ,  Jesse Reiherzer ,  David Todd Emerson

IPC分类号： H01L23/544 ,  H01L27/15 ,  H01L33/22 ,  H01L33/60 ,  H01L33/62 ,  H01L33/00

摘要： Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly LED chips and related methods are disclosed. LED chips are provided that include an indicia arranged between a primary light-emitting face and a mounting face of the LED chip. The indicia may include at least one of a logo, one or more alphanumeric characters, or a symbol, among others that are configured to convey information. Arrangements of at least one of an n-contact, a p-contact, or a reflector layer of the LED chip may form the indicia. LED chips are also provided where at least a portion of an indicia is arranged on a mounting face of the LED chip. Indicia are provided that may be visible through primary light-emitting faces when LED chips are electrically activated or electrically deactivated. In this regard, the indicia may be embedded within LED chips while still being able to convey information.

公开(公告)号：US08853712B2

公开(公告)日：2014-10-07

申请号：US13661909

申请日：2012-10-26

申请人： Cree, Inc.

发明人： Christopher P. Hussell ,  Florin Tudorica ,  David Todd Emerson ,  Michael John Bergmann ,  Arthur Fong-Yuen Pun

IPC分类号： H01L27/15 ,  G02B5/02 ,  F21K99/00 ,  F21V3/00 ,  F21V3/02 ,  F21V3/04 ,  F21V8/00 ,  F21Y101/02

CPC分类号： F21K9/56 ,  F21K9/232 ,  F21K9/61 ,  F21K9/64 ,  F21V3/00 ,  F21V3/02 ,  F21V3/049 ,  F21V3/061 ,  F21V3/062 ,  F21V3/10 ,  F21V3/12 ,  F21Y2115/10 ,  G02B5/0236 ,  G02B5/0278 ,  G02B6/0003 ,  G02B6/001 ,  G02B6/0035 ,  G02B6/005 ,  G02B6/0073 ,  G02B6/0096

摘要： A semiconductor light emitting apparatus a semiconductor light emitting device configured to emit light inside a hollow shell including wavelength conversion material dispersed therein or thereon. A semiconductor light emitting apparatus according to some embodiments is capable of generating in excess of 250 lumens per watt, and in some cases up to 270 lumens per watt.

摘要翻译： 一种半导体发光装置，其被配置为在包含分散在其中的波长转换材料或其上的中空壳内发光。 根据一些实施例的半导体发光装置能够产生超过每瓦功率250流明，并且在一些情况下能够产生高达270流明/瓦特。

公开(公告)号：USRE46589E1

公开(公告)日：2017-10-24

申请号：US14797980

申请日：2015-07-13

申请人： Cree, Inc.

发明人： John Adam Edmond ,  Kathleen Marie Doverspike ,  Hua-shuang Kong ,  Michael John Bergmann ,  David Todd Emerson

IPC分类号： H01L33/00 ,  H01L33/32 ,  H01L33/02 ,  H01S5/343 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/14

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06

摘要： The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The structure includes a first n-type cladding layer of AlxInyGa1−x−yN, where 0≦x≦1 and 0≦y

公开(公告)号：US09634209B2

公开(公告)日：2017-04-25

申请号：US14012764

申请日：2013-08-28

申请人： Cree, Inc.

发明人： Chi Keung Chan ,  Chak Hau Pang ,  Fei Hong Li ,  David Todd Emerson

IPC分类号： H01L33/00 ,  H01L33/62 ,  H01L33/48 ,  H01L25/075 ,  H01L23/00

CPC分类号： H01L33/62 ,  H01L24/48 ,  H01L24/85 ,  H01L24/97 ,  H01L25/0753 ,  H01L33/486 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/85 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： A surface mount LED package includes a lead frame carrying a plurality of LEDs and a plastic casing at least partially encasing the lead frame. The lead frame includes an electrically conductive chip carrier and first, second, and third electrically conductive connection parts separate from the electrically conductive chip carrier. Each of the first, second and third electrically conductive connection parts has an upper surface, a lower surface, and a connection pad on the upper surface. The plurality of LEDs are disposed on an upper surface of the electrically conductive chip carrier. Each LED has a first electrical terminal electrically coupled to the electrically conductive chip carrier. Each LED has a second electrical terminal electrically coupled to the connection pad of a corresponding one of the first, second, and third electrically conductive connection parts.

公开(公告)号：US09054253B2

公开(公告)日：2015-06-09

申请号：US14015466

申请日：2013-08-30

申请人： Cree, Inc.

发明人： Michael John Bergmann ,  David Todd Emerson

IPC分类号： H01L33/06 ,  H01L21/02 ,  H01L33/32 ,  B82Y20/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0254 ,  H01L33/32

摘要： Group III nitride based light emitting devices and methods of fabricating Group III nitride based light emitting devices are provided. The emitting devices include an n-type Group III nitride layer, a Group III nitride based active region on the n-type Group III nitride layer and comprising at least one quantum well structure, a Group III nitride layer including indium on the active region, a p-type Group III nitride layer including aluminum on the Group III nitride layer including indium, a first contact on the n-type Group III nitride layer and a second contact on the p-type Group III nitride layer. The Group III nitride layer including indium may also include aluminum.

摘要翻译： 提供III族氮化物基发光器件和制造III族氮化物基发光器件的方法。 发光器件包括n型III族氮化物层，n型III族氮化物层上的III族氮化物基有源区，并且包括至少一个量子阱结构，在有源区上包括铟的III族氮化物层， 在包括铟的III族氮化物层上包括铝的p型III族氮化物层，n型III族氮化物层上的第一接触和p型III族氮化物层上的第二接触。 包括铟的III族氮化物层也可以包括铝。

公开(公告)号：US08704240B2

公开(公告)日：2014-04-22

申请号：US13856928

申请日：2013-04-04

申请人： Cree, Inc.

发明人： David Todd Emerson ,  Kevin Haberern ,  Michael John Bergmann ,  David B. Slater, Jr. ,  Matthew Donofrio ,  John Edmond

IPC分类号： H01L33/00

CPC分类号： H01L33/145 ,  H01L24/05 ,  H01L33/14 ,  H01L33/38 ,  H01L2224/49107 ,  H01L2933/0016

摘要： A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer and an active region between the p-type semiconductor layer and the n-type semiconductor layer. A bond pad is provided on one of the p-type semiconductor layer or the n-type semiconductor layer, opposite the active region, the bond pad being electrically connected to the one of the p-type semiconductor layer or the n-type semiconductor layer. A conductive finger extends from and is electrically connected to the bond pad. A reduced conductivity region is provided in the light emitting device that is aligned with the conductive finger. A reflector may also be provided between the bond pad and the reduced conductivity region. A reduced conductivity region may also be provided in the light emitting device that is not aligned with the bond pad.

摘要翻译： 发光器件包括p型半导体层，n型半导体层和p型半导体层和n型半导体层之间的有源区。 在与有源区相对的p型半导体层或n型半导体层之一上设置接合焊盘，所述接合焊盘与p型半导体层或n型半导体层中的一者电连接 。 导电指状物从接合焊盘延伸并与其电连接。 在与导电指状物对准的发光器件中设置降低的导电性区域。 还可以在接合焊盘和减小的导电区域之间设置反射器。 还可以在不与接合焊盘对准的发光器件中提供降低的导电性区域。

公开(公告)号：US20130069089A1

公开(公告)日：2013-03-21

申请号：US13661909

申请日：2012-10-26

申请人： Cree, Inc

发明人： Christopher P. Hussell ,  Florin Tudorica ,  David Todd Emerson ,  Michael John Bergmann ,  Arthur Fong-Yuen Pun

IPC分类号： H01L33/50 ,  H01L33/08

CPC分类号： F21K9/56 ,  F21K9/232 ,  F21K9/61 ,  F21K9/64 ,  F21V3/00 ,  F21V3/02 ,  F21V3/049 ,  F21V3/061 ,  F21V3/062 ,  F21V3/10 ,  F21V3/12 ,  F21Y2115/10 ,  G02B5/0236 ,  G02B5/0278 ,  G02B6/0003 ,  G02B6/001 ,  G02B6/0035 ,  G02B6/005 ,  G02B6/0073 ,  G02B6/0096

摘要： A semiconductor light emitting apparatus a semiconductor light emitting device configured to emit light inside a hollow shell including wavelength conversion material dispersed therein or thereon. A semiconductor light emitting apparatus according to some embodiments is capable of generating in excess of 250 lumens per watt, and in some cases up to 270 lumens per watt.

摘要翻译： 一种半导体发光装置，其被配置为在包含分散在其中的波长转换材料或其上的中空壳内发光。 根据一些实施例的半导体发光装置能够产生超过每瓦功率250流明，并且在一些情况下能够产生高达270流明/瓦特。

公开(公告)号：US20210104503A1

公开(公告)日：2021-04-08

申请号：US17103509

申请日：2020-11-24

申请人： Cree, Inc.

发明人： Michael John Bergmann ,  David Todd Emerson ,  Joseph G. Clark ,  Christopher P. Hussell

IPC分类号： H01L25/075 ,  H01L23/00 ,  H01L33/62 ,  H01L33/00 ,  H01L33/38 ,  H01L33/48 ,  H01L33/50

摘要： An LED wafer includes LED dies on an LED substrate. The LED wafer and a carrier wafer are joined. The LED wafer that is joined to the carrier wafer is shaped. Wavelength conversion material is applied to the LED wafer that is shaped. Singulation is performed to provide LED dies that are joined to a carrier die. The singulated devices may be mounted in an LED fixture to provide high light output per unit area.

公开(公告)号：US20130341593A1

公开(公告)日：2013-12-26

申请号：US14015466

申请日：2013-08-30

申请人： CREE, INC.

发明人： Michael John Bergmann ,  David Todd Emerson

IPC分类号： H01L33/06

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0254 ,  H01L33/32

摘要： Group III nitride based light emitting devices and methods of fabricating Group III nitride based light emitting devices are provided. The emitting devices include an n-type Group III nitride layer, a Group III nitride based active region on the n-type Group III nitride layer and comprising at least one quantum well structure, a Group III nitride layer including indium on the active region, a p-type Group III nitride layer including aluminum on the Group III nitride layer including indium, a first contact on the n-type Group III nitride layer and a second contact on the p-type Group III nitride layer. The Group III nitride layer including indium may also include aluminum.

摘要翻译： 提供III族氮化物基发光器件和制造III族氮化物基发光器件的方法。 发光器件包括n型III族氮化物层，n型III族氮化物层上的III族氮化物基有源区，并且包括至少一个量子阱结构，在有源区上包括铟的III族氮化物层， 在包括铟的III族氮化物层上包括铝的p型III族氮化物层，n型III族氮化物层上的第一接触和p型III族氮化物层上的第二接触。 包括铟的III族氮化物层也可以包括铝。

公开(公告)号：US20200176507A1

公开(公告)日：2020-06-04

申请号：US16203709

申请日：2018-11-29

申请人： Cree, Inc.

发明人： Nikolas Hall ,  Derek Miller ,  Anoop Mathew ,  Colin Blakely ,  Luis Breva ,  Jesse Reiherzer ,  David Todd Emerson

IPC分类号： H01L27/15 ,  H01L23/544 ,  H01L33/22 ,  H01L33/60 ,  H01L33/62 ,  H01L33/00

摘要： Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly LED chips and related methods are disclosed. LED chips are provided that include an indicia arranged between a primary light-emitting face and a mounting face of the LED chip. The indicia may include at least one of a logo, one or more alphanumeric characters, or a symbol, among others that are configured to convey information. Arrangements of at least one of an n-contact, a p-contact, or a reflector layer of the LED chip may form the indicia. LED chips are also provided where at least a portion of an indicia is arranged on a mounting face of the LED chip. Indicia are provided that may be visible through primary light-emitting faces when LED chips are electrically activated or electrically deactivated. In this regard, the indicia may be embedded within LED chips while still being able to convey information.