公开(公告)号：US20210020805A1

公开(公告)日：2021-01-21

申请号：US17062119

申请日：2020-10-02

申请人： Cree, Inc.

发明人： Kevin W. Haberern ,  Matthew Donofrio ,  Bennett Langsdorf ,  Thomas Place ,  Michael John Bergmann

IPC分类号： H01L33/08 ,  H01L33/40 ,  H01L25/075

摘要： Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another with at least some of the active regions having a space between adjacent ones of the active regions that is 10 percent or less of the width of one or more of the active regions. The space is substantially not visible when the LED chip is emitting, such that the LED chips emits light similar to a filament.

公开(公告)号：US10109773B2

公开(公告)日：2018-10-23

申请号：US15832848

申请日：2017-12-06

申请人： Cree, Inc.

发明人： Iliya Todorov ,  David Clatterbuck ,  Jasper Cabalu ,  Brian Collins ,  Michael John Bergmann ,  Florin Tudorica

IPC分类号： H01L33/50 ,  C09K11/77 ,  C09K11/61

摘要： A semiconductor light emitting device includes an LED and an associated recipient luminophoric medium that includes respective first through fourth luminescent materials that down-convert respective first through fourth portions of the radiation emitted by the LED to radiation having respective first through fourth peak wavelengths. The first peak wavelength is in the green color range and the second through fourth peak wavelengths are in the red color range. The second and third luminescent materials each emit light having a full-width half maximum bandwidth of at least 70 nanometers, while the fourth luminescent material emits light having a full-width half maximum bandwidth of less than 60 nanometers. Embodiments that only include three luminescent materials are also disclosed.

公开(公告)号：US09887327B2

公开(公告)日：2018-02-06

申请号：US13957290

申请日：2013-08-01

申请人： CREE, INC.

发明人： Jesse Reiherzer ,  Andrew Signor ,  Joseph Gates Clark ,  Michael John Bergmann

IPC分类号： H01L33/00 ,  H01L33/50 ,  H01L33/58 ,  H01L33/54 ,  H01L25/075 ,  H01L33/48

CPC分类号： H01L33/505 ,  H01L25/0753 ,  H01L33/486 ,  H01L33/508 ,  H01L33/54 ,  H01L33/58 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

摘要： LED packages are disclosed that are compact and efficiently emit light, and can comprise encapsulants with curved and planar surfaces. The packages can comprise a submount with a one or a plurality of LEDs, and in those with a plurality of LEDs each of the LEDs can emit the same or different wavelengths of light than the others. A blanket conversion material layer can be included on at least some of the LEDs and the submount. The encapsulant can be on the submount, over at least some of the LEDs, with each of the planar surfaces being vertical and aligned with one of the edges of the submount. The encapsulant can also have a upper curved surface with a relatively large radius of curvature, with the combination of curved and planar surfaces resulting in efficient emission of light with a relatively narrow emission profile.

公开(公告)号：USRE46588E1

公开(公告)日：2017-10-24

申请号：US14743528

申请日：2015-06-18

申请人： Cree, Inc.

发明人： John Adam Edmond ,  Kathleen Marie Doverspike ,  Hua-shuang Kong ,  Michael John Bergmann

IPC分类号： H01L33/00 ,  H01L33/32 ,  H01S5/323 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/343

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/32341

摘要： The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a Group III nitride active layer positioned between a first n-type Group III nitride cladding layer and a second n-type Group III nitride cladding layer, the respective bandgaps of the first and second n-type cladding layers being greater than the bandgap of the active layer. The semiconductor structure further includes a p-type Group III nitride layer, which is positioned in the semiconductor structure such that the second n-type cladding layer is between the p-type layer and the active layer.

公开(公告)号：US09634197B2

公开(公告)日：2017-04-25

申请号：US13801743

申请日：2013-03-13

申请人： Cree, Inc.

发明人： Michael John Bergmann ,  Kevin Haberern ,  Alan Wellford Dillon

IPC分类号： H01L29/18 ,  H01L33/50 ,  H01L33/60 ,  H01L23/00 ,  H01L33/22 ,  H01L33/00 ,  H01L33/40 ,  H01L33/62 ,  H01L33/64

摘要： An LED wafer includes LED dies on an LED substrate. The LED wafer and a carrier wafer are joined. The LED wafer that is joined to the carrier wafer is shaped. Wavelength conversion material is applied to the LED wafer that is shaped. Singulation is performed to provide multiple LED dies that are joined to a single carrier die. The multiple LED dies on the single carrier die are connected in series and/or in parallel by interconnection in the LED dies and/or in the single carrier die. The singulated devices may be mounted in an LED fixture to provide high light output per unit area. Related devices and fabrication methods are described.

公开(公告)号：US20160273716A1

公开(公告)日：2016-09-22

申请号：US15166352

申请日：2016-05-27

申请人： Cree, Inc.

发明人： Eric Tarsa ,  Michael John Bergmann ,  David Power ,  Jeremy Johnson ,  Jean Claude deSugny

IPC分类号： F21K99/00 ,  F21V3/04 ,  F21V23/00 ,  H05B37/02 ,  F21V8/00 ,  F21V19/00 ,  F21V23/02 ,  F21V5/00 ,  F21V29/74

CPC分类号： H05B37/0272 ,  F21K9/232 ,  F21K9/61 ,  F21V23/009 ,  F21Y2113/13 ,  F21Y2115/10 ,  G02B6/0001

摘要： A LED lamp has at least two LEDs to provide light of at least two different spectral outputs. An optic element has an entry surface disposed to receive the light from the LEDs. The entry surface includes refracting surfaces that refract the light tangentially. The refracting surfaces may extend radially relative to a center of the entry surface. The refracting surfaces may be continuously curved in cross-section where the refracting surfaces may include convex refracting surfaces and concave refracting surfaces.

摘要翻译： LED灯具有至少两个LED以提供至少两个不同光谱输出的光。 光学元件具有设置成接收来自LED的光的入射表面。 入射表面包括折射光，其切向地折射光。 折射表面可以相对于进入表面的中心径向延伸。 折射表面可以在横截面上连续弯曲，其中折射表面可以包括凸折射表面和凹折射表面。

公开(公告)号：USD758976S1

公开(公告)日：2016-06-14

申请号：US29462795

申请日：2013-08-08

申请人： CREE, INC.

设计人： Jesse Reiherzer ,  Michael John Bergmann ,  Joseph Gates Clark

公开(公告)号：US08853712B2

公开(公告)日：2014-10-07

申请号：US13661909

申请日：2012-10-26

申请人： Cree, Inc.

发明人： Christopher P. Hussell ,  Florin Tudorica ,  David Todd Emerson ,  Michael John Bergmann ,  Arthur Fong-Yuen Pun

IPC分类号： H01L27/15 ,  G02B5/02 ,  F21K99/00 ,  F21V3/00 ,  F21V3/02 ,  F21V3/04 ,  F21V8/00 ,  F21Y101/02

CPC分类号： F21K9/56 ,  F21K9/232 ,  F21K9/61 ,  F21K9/64 ,  F21V3/00 ,  F21V3/02 ,  F21V3/049 ,  F21V3/061 ,  F21V3/062 ,  F21V3/10 ,  F21V3/12 ,  F21Y2115/10 ,  G02B5/0236 ,  G02B5/0278 ,  G02B6/0003 ,  G02B6/001 ,  G02B6/0035 ,  G02B6/005 ,  G02B6/0073 ,  G02B6/0096

摘要： A semiconductor light emitting apparatus a semiconductor light emitting device configured to emit light inside a hollow shell including wavelength conversion material dispersed therein or thereon. A semiconductor light emitting apparatus according to some embodiments is capable of generating in excess of 250 lumens per watt, and in some cases up to 270 lumens per watt.

摘要翻译： 一种半导体发光装置，其被配置为在包含分散在其中的波长转换材料或其上的中空壳内发光。 根据一些实施例的半导体发光装置能够产生超过每瓦功率250流明，并且在一些情况下能够产生高达270流明/瓦特。

公开(公告)号：US10991861B2

公开(公告)日：2021-04-27

申请号：US15280438

申请日：2016-09-29

申请人： Cree, Inc.

发明人： Michael John Bergmann ,  Matthew Donofrio ,  Peter Scott Andrews ,  Colin Blakely ,  Troy Gould ,  Jack Vu

IPC分类号： H01L25/16 ,  H01L33/06 ,  H01L33/10 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/48 ,  H01L33/50 ,  H01L33/54 ,  H01L33/60 ,  H01L33/62 ,  H01L25/075 ,  H01L33/32

摘要： Flip chip LEDs incorporate multi-layer reflectors and light transmissive substrates patterned along an internal surface adjacent to semiconductor layers. A multi-layer reflector may include a metal layer and a dielectric layer containing conductive vias. Portions of a multi-layer reflector may wrap around a LED mesa including an active region, while being covered with passivation material. A substrate patterned along an internal surface together with a multi-layer reflector enables reduction of optical losses. A light transmissive fillet material proximate to edge emitting surfaces of an emitter chip may enable adequate coverage with lumiphoric material. An emitter chip may be elevated with increased thickness of solder material and/or contacts, and may reduce luminous flux loss when reflective materials are present on a submount. Methods for coating emitter chips with lumiphoric material include one or more of angled spray coating, fillet formation prior to spray coating, stencil island coating, and releasable tape coating.

公开(公告)号：US10950769B2

公开(公告)日：2021-03-16

申请号：US15432146

申请日：2017-02-14

申请人： Cree, Inc.

发明人： Michael John Bergmann ,  Colin Kelly Blakely ,  Arthur Fong-Yuen Pun ,  Jesse Colin Reiherzer

IPC分类号： H01L33/62 ,  B23K1/00 ,  H01L33/64 ,  B23K35/26 ,  B23K35/30 ,  C22C13/00 ,  C22C19/03 ,  H01L25/075 ,  H01L33/36 ,  H01L33/48 ,  H01L33/38 ,  H01L33/20

摘要： A Light Emitting Diode (LED) component includes a lead frame and an LED that is electrically connected to the lead frame without wire bonds, using a solder layer. The lead frame includes a metal anode pad, a metal cathode pad and a plastic cup. The LED die includes LED die anode and cathode contacts with a solder layer on them. The metal anode pad, metal cathode pad, plastic cup and/or the solder layer are configured to facilitate the direct die attach of the LED die to the lead frame without wire bonds. Related fabrication methods are also described.