公开(公告)号：US09728711B2

公开(公告)日：2017-08-08

申请号：US14787957

申请日：2014-04-11

申请人： Crocus Technology SA

发明人： Sebastien Bandiera ,  Ioan Lucian Prejbeanu

IPC分类号： H01L43/02 ,  G11C11/16 ,  H01L43/08 ,  H01L27/22 ,  H01L43/10

CPC分类号： H01L43/02 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10

摘要： MRAM cell including a magnetic tunnel junction including a reference layer, a storage layer having a storage magnetization, a tunnel barrier layer between the reference and the storage layers; and an antiferromagnetic layer exchange-coupling the storage layer such as to pin the storage magnetization at a low temperature threshold and free it at a high temperature threshold. The storage layer includes a first ferromagnetic layer in contact with the tunnel barrier layer, a second ferromagnetic layer in contact with the antiferromagnetic layer, and a low saturation magnetization storage layer including a ferromagnetic material and a non-magnetic material. The MRAM cell can be written with improved reliability.

公开(公告)号：US20150228888A1

公开(公告)日：2015-08-13

申请号：US14431125

申请日：2013-09-12

申请人： CROCUS TECHNOLOGY SA

发明人： Ioan Lucian Prejbeanu ,  Bernard Dieny ,  Kenneth MacKay ,  Bertrand Cambou

IPC分类号： H01L43/02 ,  H03F15/00 ,  H03K19/18

CPC分类号： H01L43/02 ,  G11C11/16 ,  G11C11/1675 ,  H03F15/00 ,  H03K19/18

摘要： A magnetic logic unit (MLU) cell includes a first magnetic tunnel junction and a second magnetic tunnel junction, each magnetic tunnel junction including a first magnetic layer having a first magnetization, a second magnetic layer having a second magnetization, and a tunnel barrier layer between the first and second layer. A field line for passing a field current such as to generate an external magnetic field is adapted to switch the first magnetization. The first magnetic layer is arranged such that the magnetic tunnel junction magnetization varies linearly with the generated external magnetic field. An MLU amplifier includes a plurality of the MLU cells. The MLU amplifier has large gains, extended cut off frequencies and improved linearity.

摘要翻译： 磁逻辑单元（MLU）单元包括第一磁性隧道结和第二磁性隧道结，每个磁性隧道结包括具有第一磁化的第一磁性层，具有第二磁化的第二磁性层，和 第一层和第二层。 用于传递场电流（例如产生外部磁场）的场线适于切换第一磁化。 第一磁性层布置成使得磁性隧道结磁化随所产生的外部磁场线性变化。 MLU放大器包括多个MLU单元。 MLU放大器具有很大的增益，延长了截止频率，提高了线性度。

公开(公告)号：US08988935B2

公开(公告)日：2015-03-24

申请号：US13720232

申请日：2012-12-19

申请人： Crocus Technology SA

发明人： Ioan Lucian Prejbeanu ,  Kenneth Mackay

IPC分类号： G11C11/00 ,  G11C11/16 ,  G11C11/56 ,  H01F10/32

CPC分类号： G11C11/1675 ,  G11C11/16 ,  G11C11/161 ,  G11C11/5607 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/329

摘要： The present disclosure concerns a method for writing to a self-referenced MRAM cell comprising a magnetic tunnel junction comprising: a storage layer including a first ferromagnetic layer having a first storage magnetization, a second ferromagnetic layer having a second storage magnetization, and a non-magnetic coupling layer separating the first and second ferromagnetic layers; a sense layer having a free sense magnetization; and a tunnel barrier layer included between the sense and storage layers; the first and second ferromagnetic layers being arranged such that a dipolar coupling between the storage) and the sense layers is substantially null; the method comprising: switching the second ferromagnetic magnetization by passing a spin-polarized current in the magnetic tunnel junction; wherein the spin-polarized current is polarized when passing in the sense layer, in accordance with the direction of the sense magnetization. The MRAM cell can be written with low power consumption.

摘要翻译： 本公开涉及一种用于写入包括磁性隧道结的自参考MRAM单元的方法，包括：存储层，包括具有第一存储磁化的第一铁磁层，具有第二存储磁化的第二铁磁层， 分离第一和第二铁磁层的磁耦合层; 具有自由感知磁化的感测层; 以及包括在感测层和存储层之间的隧道势垒层; 所述第一和第二铁磁层布置成使得所述存储器之间的偶极耦合）和所述感测层基本上为零; 该方法包括：通过使磁性隧道结中的自旋极化电流通过来切换第二铁磁性磁化; 其中根据感测磁化的方向，当在感测层中通过时，自旋极化电流被极化。 MRAM单元可以写入低功耗。

公开(公告)号：US20130163318A1

公开(公告)日：2013-06-27

申请号：US13720232

申请日：2012-12-19

申请人： CROCUS TECHNOLOGY SA

发明人： Ioan Lucian Prejbeanu ,  Kenneth Mackay

IPC分类号： G11C11/16

CPC分类号： G11C11/1675 ,  G11C11/16 ,  G11C11/161 ,  G11C11/5607 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/329

摘要： The present disclosure concerns a method for writing to a self-referenced MRAM cell comprising a magnetic tunnel junction comprising: a storage layer including a first ferromagnetic layer having a first storage magnetization, a second ferromagnetic layer having a second storage magnetization, and a non-magnetic coupling layer separating the first and second ferromagnetic layers; a sense layer having a free sense magnetization; and a tunnel barrier layer included between the sense and storage layers; the first and second ferromagnetic layers being arranged such that a dipolar coupling between the storage) and the sense layers is substantially null; the method comprising: switching the second ferromagnetic magnetization by passing a spin-polarized current in the magnetic tunnel junction; wherein the spin-polarized current is polarized when passing in the sense layer, in accordance with the direction of the sense magnetization. The MRAM cell can be written with low power consumption.

摘要翻译： 本公开涉及一种用于写入包括磁性隧道结的自参考MRAM单元的方法，包括：存储层，包括具有第一存储磁化的第一铁磁层，具有第二存储磁化的第二铁磁层， 分离第一和第二铁磁层的磁耦合层; 具有自由感知磁化的感测层; 以及包括在感测层和存储层之间的隧道势垒层; 所述第一和第二铁磁层布置成使得所述存储器之间的偶极耦合）和所述感测层基本上为零; 该方法包括：通过使磁性隧道结中的自旋极化电流通过来切换第二铁磁性磁化; 其中根据感测磁化的方向，当在感测层中通过时，自旋极化电流被极化。 MRAM单元可以写入低功耗。

公开(公告)号：US09336846B2

公开(公告)日：2016-05-10

申请号：US14762264

申请日：2014-01-16

申请人： CROCUS Technology SA

发明人： Ioan Lucian Prejbeanu ,  Jerome Moritz ,  Bernard Dieny

IPC分类号： G11C11/16 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

CPC分类号： G11C11/161 ,  G11C11/16 ,  G11C11/1675 ,  G11C2211/5615 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： MRAM element having a magnetic tunnel junction including a reference layer, a storage layer, a tunnel barrier layer between the reference and storage layers, and a storage antiferromagnetic layer. The storage antiferromagnetic layer has a first function of exchange-coupling a storage magnetization of the storage layer and a second function of heating the magnetic tunnel junction when a heating current in passed in the magnetic tunnel junction. The MRAM element has better data retention and low writing temperature.

摘要翻译： MRAM元件具有包括参考层的磁性隧道结，存储层，参考层和存储层之间的隧道势垒层，以及存储反铁磁层。 存储反铁磁层具有交换耦合存储层的存储磁化的第一功能和当通过磁性隧道结中的加热电流时加热磁性隧道结的第二功能。 MRAM元件具有更好的数据保留和低写入温度。

公开(公告)号：US09324936B2

公开(公告)日：2016-04-26

申请号：US14431140

申请日：2013-09-12

申请人： CROCUS Technology SA

发明人： Ioan Lucian Prejbeanu ,  Bernard Dieny ,  Kenneth MacKay ,  Bertrand Cambou

IPC分类号： H01L43/00 ,  H01L29/82 ,  H01L43/02 ,  H03F15/00 ,  G11C11/16 ,  H01L43/10 ,  H03K19/18

CPC分类号： H01L43/02 ,  G11C11/16 ,  G11C11/1675 ,  H01L43/10 ,  H03F15/00 ,  H03K19/18

摘要： A magnetic logic unit (MLU) cell includes a first and second magnetic tunnel junction, each including a first magnetic layer having a first magnetization, a second magnetic layer having a second magnetization, and a barrier layer; and a field line for passing a field current such as to generate an external magnetic field adapted to adjust the first magnetization. The first and second magnetic layers and the barrier layer are arranged such that the first magnetization is magnetically coupled antiparallel with the second magnetization through the barrier layer. The MLU cell also includes a biasing device arranged for applying a static biasing magnetic field oriented substantially parallel to the external magnetic field such as to orient the first magnetization at about 90° relative to the second magnetization, the first and second magnetizations being oriented symmetrically relative to the direction of the external magnetic field.

摘要翻译： 磁逻辑单元（MLU）单元包括第一和第二磁性隧道结，每个包括具有第一磁化的第一磁性层，具有第二磁化的第二磁性层和阻挡层; 以及用于通过场电流的场线，以产生适于调整第一磁化的外部磁场。 第一和第二磁性层和阻挡层被布置成使得第一磁化与通过阻挡层的第二磁化反平行地磁耦合。 MLU单元还包括偏置装置，其被布置成施加基本上平行于外部磁场定向的静态偏置磁场，以便相对于第二磁化将第一磁化定向成约90°，第一和第二磁化定向对称相对 到外部磁场的方向。

公开(公告)号：US09165626B2

公开(公告)日：2015-10-20

申请号：US13625923

申请日：2012-09-25

申请人： Crocus Technology SA

发明人： Ioan Lucian Prejbeanu ,  Lucien Lombard

IPC分类号： G11C11/00 ,  G11C11/16

CPC分类号： G11C11/16 ,  G11C11/00 ,  G11C11/1673 ,  G11C11/1675

摘要： MRAM cell comprising a magnetic tunnel junction comprising a storage layer having a net storage magnetization being adjustable when the magnetic tunnel junction is at a high temperature threshold and being pinned at a low temperature threshold; a sense layer having a reversible sense magnetization; and a tunnel barrier layer between the sense and storage layers; at least one of the storage and sense layer comprising a ferrimagnetic 3d-4f amorphous alloy material comprising a sub-lattice of 3d transition metals atoms providing a first magnetization and a sub-lattice of 4f rare-earth atoms providing a second magnetization, such that at a compensation temperature of said at least one of the storage layer and the sense layer, the first magnetization and the second magnetization are substantially equal. The disclosed MRAM cell can be written and read using a small writing and reading field, respectively.

摘要翻译： MRAM单元包括磁隧道结，其包括存储层，所述存储层具有当磁性隧道结处于高温阈值并被固定在低温阈值时可净化的净存储磁化; 具有可逆感测磁化的感测层; 以及感测层和存储层之间的隧道势垒层; 所述存储和感测层中的至少一个包括铁氧体3d-4f非晶合金材料，其包含提供第一磁化的3d过渡金属原子的子晶格和提供第二磁化的4f稀土原子的子晶格，使得 在所述存储层和感测层中的至少一个的补偿温度下，第一磁化强度和第二磁化强度基本相等。 可以分别使用小的写入和读取字段来写入和读取所公开的MRAM单元。

公开(公告)号：US20150270479A1

公开(公告)日：2015-09-24

申请号：US14431140

申请日：2013-09-12

申请人： CROCUS TECHNOLOGY SA

发明人： Ioan Lucian Prejbeanu ,  Bernard Dieny ,  Kenneth MacKay ,  Bertrand Cambou

IPC分类号： H01L43/02 ,  H03K19/18 ,  H03F15/00 ,  H01L43/10

CPC分类号： H01L43/02 ,  G11C11/16 ,  G11C11/1675 ,  H01L43/10 ,  H03F15/00 ,  H03K19/18

摘要： A magnetic logic unit (MLU) cell includes a first and second magnetic tunnel junction, each including a first magnetic layer having a first magnetization, a second magnetic layer having a second magnetization, and a barrier layer; and a field line for passing a field current such as to generate an external magnetic field adapted to adjust the first magnetization. The first and second magnetic layers and the barrier layer are arranged such that the first magnetization is magnetically coupled antiparallel with the second magnetization through the barrier layer. The MLU cell also includes a biasing device arranged for applying a static biasing magnetic field oriented substantially parallel to the external magnetic field such as to orient the first magnetization at about 90° relative to the second magnetization, the first and second magnetizations being oriented symmetrically relative to the direction of the external magnetic field.

摘要翻译： 磁逻辑单元（MLU）单元包括第一和第二磁性隧道结，每个包括具有第一磁化的第一磁性层，具有第二磁化的第二磁性层和阻挡层; 以及用于通过场电流的场线，以产生适于调整第一磁化的外部磁场。 第一和第二磁性层和阻挡层被布置成使得第一磁化与通过阻挡层的第二磁化反平行地磁耦合。 MLU单元还包括偏置装置，其被布置成施加基本上平行于外部磁场定向的静态偏置磁场，以便相对于第二磁化将第一磁化定向成约90°，第一和第二磁化定向对称相对 到外部磁场的方向。

公开(公告)号：US08743597B2

公开(公告)日：2014-06-03

申请号：US13711820

申请日：2012-12-12

申请人： Crocus Technology SA

发明人： Ioan Lucian Prejbeanu ,  Lucien Lombard ,  Quentin Stainer ,  Kenneth Mackay

IPC分类号： G11C11/16 ,  G11C11/00 ,  G11C11/02 ,  G11C11/15

CPC分类号： G11C11/161 ,  G01R33/093 ,  G01R33/098 ,  G11C11/15 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08 ,  H01L43/10

摘要： The present disclosure concerns a MRAM element comprising a magnetic tunnel junction comprising: a storage layer, a sense layer, and a tunnel barrier layer included between the storage layer and the sense layer; the storage layer comprising a first magnetic layer having a first storage magnetization; a second magnetic layer having a second storage magnetization; and a non-magnetic coupling layer separating the first and second magnetic layers such that the first storage magnetization is substantially antiparallel to the second storage magnetization; the first and second magnetic layers being arranged such that: at a read temperature the first storage magnetization is substantially equal to the second storage magnetization; and at a write temperature which is higher than the read temperature the second storage magnetization is larger than the first storage magnetization. The disclosed MRAM element generates a low stray field when the magnetic tunnel junction is cooled at a low temperature.

摘要翻译： 本公开涉及一种包括磁性隧道结的MRAM元件，包括：存储层，感测层和包括在存储层和感测层之间的隧道势垒层; 所述存储层包括具有第一存储磁化的第一磁性层; 具有第二存储磁化的第二磁性层; 以及分离所述第一和第二磁性层的非磁性耦合层，使得所述第一存储磁化基本上反平行于所述第二存储磁化; 第一和第二磁性层布置成使得在读取温度下，第一存储磁化基本上等于第二存储磁化; 并且在写入温度高于读取温度时，第二存储磁化强度大于第一存储磁化强度。 当磁性隧道结在低温下被冷却时，所公开的MRAM元件产生低杂散场。

公开(公告)号：US20130182499A1

公开(公告)日：2013-07-18

申请号：US13739044

申请日：2013-01-11

申请人： CROCUS Technology SA

发明人： Ioan Lucian Prejbeanu ,  Ricardo Sousa

IPC分类号： G11C11/16

CPC分类号： G11C11/1675 ,  G11C11/16 ,  G11C11/161

摘要： The present disclosure concerns a method for writing to a MRAM cell comprising a magnetic tunnel junction formed from a storage layer having a storage magnetization; a reference layer having a reference magnetization; and a tunnel barrier layer included between the sense and storage layers; and a current line electrically connected to said magnetic tunnel junction; the method comprising: passing a heating current in the magnetic tunnel junction for heating the magnetic tunnel junction; passing a field current for switching the storage magnetization in a written direction in accordance with the polarity of the field current. The magnitude of the heating current is such that it acts as a spin polarized current and can adjust the storage magnetization; and the polarity of the heating current is such as to adjust the storage magnetization substantially towards said written direction.

摘要翻译： 本公开涉及一种用于写入到具有由具有存储磁化的存储层形成的磁性隧道结的MRAM单元的方法; 具有参考磁化的参考层; 以及包括在感测层和存储层之间的隧道势垒层; 以及电连接到所述磁性隧道结的电流线; 所述方法包括：使所述磁性隧道结中的加热电流通过以加热所述磁性隧道结; 根据励磁电流的极性，传递用于沿写入方向切换存储磁化的励磁电流。 加热电流的大小使得其作为自旋极化电流并且可以调节存储磁化强度; 并且加热电流的极性使得大致朝向所述写入方向调节存储磁化。