公开(公告)号：US10191719B2

公开(公告)日：2019-01-29

申请号：US15552508

申请日：2016-02-22

Applicant: CROCUS Technology SA

Inventor： Sebastien Bandiera ,  Quentin Stainer

IPC: G06F7/58

Abstract: A programmable magnetic device for generating random numbers during a programming operation, including an array of a plurality of magnetic tunnel junctions. Each magnetic tunnel junction includes a reference layer having a reference magnetization; a tunnel barrier layer; and a storage layer having a storage magnetization. The programmable magnetic device is arranged such that, during the programming operation, the storage magnetization is orientable in an unstable magnetization configuration and relaxable randomly in one of a plurality of stable or metastable configurations from the unstable magnetization configuration.

公开(公告)号：US09989599B2

公开(公告)日：2018-06-05

申请号：US15028114

申请日：2014-10-01

Applicant: Crocus Technology SA

Inventor： Sebastien Bandiera

IPC: G01R33/09

CPC classification number: G01R33/098

Abstract: A magnetic sensor cell includes a magnetic tunnel junction including a reference layer having a reference magnetization oriented parallel to the plane of the reference layer, a sense layer having a sense magnetization, and a tunnel barrier layer between the sense and reference layers. A magnetic device is configured for providing a sense magnetic field for aligning the sense magnetization. The sense layer magnetization is orientable between a direction parallel to the plane of the sense layer and a direction perpendicular to the plane of the sense layer when the sense magnetic field is provided. The magnetic sensor cell can be used for sensing an external magnetic field including a component oriented parallel to the plane of the sense layer and a component oriented perpendicular to the plane of the sense layer.

公开(公告)号：US09983275B2

公开(公告)日：2018-05-29

申请号：US15028103

申请日：2014-10-01

Applicant: Crocus Technology SA

Inventor： Sebastien Bandiera

IPC: G01R33/02 ,  G01R33/09

CPC classification number: G01R33/098

Abstract: Method for sensing an external magnetic field using a magnetic sensor cell including: a magnetic tunnel junction including a reference layer having a reference magnetization oriented parallel to the plane of the reference layer, a sense layer having a sense magnetization, and a tunnel barrier layer between the sense and reference layers. A field line is configured for passing a field current for providing a sense magnetic field adapted for aligning the sense magnetization. The sense layer magnetization is orientable between a direction parallel to the plane of the sense layer and a direction perpendicular to the plane of the sense layer when the sense magnetic field is provided. The external magnetic field includes an in-plane component oriented parallel to the plane of the sense layer and an out-of-plane component perpendicular to the plane of the sense layer. The method includes sensing the out-of-plane component; and sensing the in-plane component.

公开(公告)号：US09818465B2

公开(公告)日：2017-11-14

申请号：US15022766

申请日：2014-09-08

Applicant: Crocus Technology SA

Inventor： Sebastien Bandiera

IPC: G11C15/02 ,  G11C11/16 ,  H01F10/32 ,  H01L43/08 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10

CPC classification number: G11C11/1673 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3286 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A self-referenced MRAM cell comprises a first portion of a magnetic tunnel junction including a storage layer; a second portion of the magnetic tunnel junction portion including a tunnel barrier layer, a sense layer and a seed layer; the seed layer comprising a material having high spin-orbit coupling such that passing a sense current along the plane of the sense layer and/or seed layer exerts a spin-orbit torque adapted for switching a sense magnetization of the sense layer. A memory device comprising a plurality of the MRAM cells and a method for operating the memory device are also disclosed.

公开(公告)号：US20150129946A1

公开(公告)日：2015-05-14

申请号：US14499523

申请日：2014-09-29

Applicant: International Business Machines Corporation ,  Crocus Technology, SA

Inventor： Anthony J. Annunziata ,  Sebastien Bandiera ,  Lucien Lombard ,  Lucian Prejbeanu ,  Philip L. Trouilloud ,  Daniel C. Worledge

IPC: H01L27/22 ,  H01L43/02

CPC classification number: H01L43/12 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A mechanism is provided for a thermally assisted magnetoresistive random access memory device (TAS-MRAM) with reduced power for reading and writing. A tunnel barrier is disposed adjacent to a ferromagnetic sense layer and a ferromagnetic storage layer, such that the tunnel barrier is sandwiched between the ferromagnetic sense layer and the ferromagnetic storage layer. An antiferromagnetic pinning layer is disposed adjacent to the ferromagnetic storage layer. The pinning layer pins a magnetic moment of the storage layer until heating is applied. The storage layer includes a non-magnetic material to reduce a storage layer magnetization as compared to not having the non-magnetic material. The sense layer includes the non-magnetic material to reduce a sense layer magnetization as compared to not having the non-magnetic material. A reduction in the storage layer magnetization and sense layer magnetization reduces the magnetostatic interaction between the storage layer and sense layer, resulting in less read/write power.

Abstract translation: 提供了一种用于读取和写入功率降低的热辅助磁阻随机存取存储器件（TAS-MRAM）的机构。 隧道势垒设置在铁磁感应层和铁磁存储层附近，使得隧道势垒夹在铁磁感测层和铁磁存储层之间。 反铁磁钉扎层邻近铁磁存储层设置。 钉扎层引导存储层的磁矩，直到加热。 与没有非磁性材料相比，存储层包括非磁性材料以减少存储层的磁化。 与没有非磁性材料相比，感应层包括非磁性材料以减小感测层的磁化强度。 存储层磁化强度和感测层磁化强度的降低降低了存储层和感测层之间的静磁相互作用，导致更少的读/写功率。

公开(公告)号：US20190036015A1

公开(公告)日：2019-01-31

申请号：US16083163

申请日：2017-03-06

Applicant: Crocus Technology SA

Inventor： Sebastien Bandiera

IPC: H01L43/08 ,  H01F10/32 ,  H01L43/12

CPC classification number: H01L43/08 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295 ,  H01L43/12

Abstract: A magnetoresistive element including: a storage layer having a first storage magnetostriction; a sense layer having a first sense magnetostriction; and a barrier layer between and in contact with the storage and sense layer. The magnetoresistive element also includes a compensating ferromagnetic layer having a second magnetostriction different from the first storage magnetostriction and/or sense magnetostriction, and adapted to compensate the first storage magnetostriction and/or the first sense magnetostriction so that a net magnetostriction of the storage layer and/or sense layer is adjustable between −10 ppm and +10 ppm or more negative than −10 ppm by adjusting a thickness of the compensating ferromagnetic layer. The present disclosure also concerns a magnetic device comprising the magnetoresistive element.

公开(公告)号：US20180336014A1

公开(公告)日：2018-11-22

申请号：US15552508

申请日：2016-02-22

Applicant: CROCUS Technology SA

Inventor： Sebastien Bandiera ,  Quentin Stainer

IPC: G06F7/58

CPC classification number: G06F7/588

Abstract: A programmable magnetic device for generating random numbers during a programming operation, including an array of a plurality of magnetic tunnel junctions. Each magnetic tunnel junction includes a reference layer having a reference magnetization; a tunnel barrier layer; and a storage layer having a storage magnetization. The programmable magnetic device is arranged such that, during the programming operation, the storage magnetization is orientable in an unstable magnetization configuration and relaxable randomly in one of a plurality of stable or metastable configurations from the unstable magnetization configuration.

公开(公告)号：US09995798B2

公开(公告)日：2018-06-12

申请号：US15543614

申请日：2015-12-23

Applicant: CROCUS Technology SA

Inventor： Sebastien Bandiera

IPC: G01R33/09 ,  G11C11/16 ,  H01F10/32

CPC classification number: G01R33/098 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254

Abstract: A magnetic sensor device for sensing an external magnetic field includes a plurality of MLU cells, each MLU cell having a magnetic tunnel junction including a sense layer having a sense magnetization freely orientable in the external magnetic field, a storage layer having a storage magnetization; and a tunnel barrier layer between the sense layer and the storage layer. The magnetic sensor device includes a stress inducing device configured for applying an anisotropic mechanical stress on the magnetic tunnel junction such as to induce a stress-induced magnetic anisotropy on at least one of the sense layer and the storage layer. The stress-induced magnetic anisotropy induced by the stress inducing device corresponds substantially to a net magnetic anisotropy of the at least one of the sense layer and the storage layer. The magnetic sensor device can be programmed easily and has improved sensitivity.

公开(公告)号：US09728711B2

公开(公告)日：2017-08-08

申请号：US14787957

申请日：2014-04-11

Applicant: Crocus Technology SA

Inventor： Sebastien Bandiera ,  Ioan Lucian Prejbeanu

IPC: H01L43/02 ,  G11C11/16 ,  H01L43/08 ,  H01L27/22 ,  H01L43/10

CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10

Abstract: MRAM cell including a magnetic tunnel junction including a reference layer, a storage layer having a storage magnetization, a tunnel barrier layer between the reference and the storage layers; and an antiferromagnetic layer exchange-coupling the storage layer such as to pin the storage magnetization at a low temperature threshold and free it at a high temperature threshold. The storage layer includes a first ferromagnetic layer in contact with the tunnel barrier layer, a second ferromagnetic layer in contact with the antiferromagnetic layer, and a low saturation magnetization storage layer including a ferromagnetic material and a non-magnetic material. The MRAM cell can be written with improved reliability.

公开(公告)号：US20160252591A1

公开(公告)日：2016-09-01

申请号：US15028103

申请日：2014-10-01

Applicant: CROCUS TECHNOLOGY SA

Inventor： Sebastien Bandiera

IPC: G01R33/09

CPC classification number: G01R33/098

Abstract: Method for sensing an external magnetic field using a magnetic sensor cell including: a magnetic tunnel junction including a reference layer having a reference magnetization oriented parallel to the plane of the reference layer, a sense layer having a sense magnetization, and a tunnel barrier layer between the sense and reference layers. A field line is configured for passing a field current for providing a sense magnetic field adapted for aligning the sense magnetization. The sense layer magnetization is orientable between a direction parallel to the plane of the sense layer and a direction perpendicular to the plane of the sense layer when the sense magnetic field is provided. The external magnetic field includes an in-plane component oriented parallel to the plane of the sense layer and an out-of-plane component perpendicular to the plane of the sense layer. The method includes sensing the out-of-plane component; and sensing the in-plane component.

Abstract translation: 一种用于使用磁传感器电池感测外部磁场的方法，包括：包括具有平行于参考层的平面的参考磁化的参考磁化的参考层的磁性隧道结，具有感测磁化的感测层，以及在 感觉和参考层。 场线被配置为传递场电流以提供适于对准感测磁化的感测磁场。 当提供感测磁场时，感测层磁化在平行于感测层的平面的方向和垂直于感测层的平面的方向之间定向。 外部磁场包括平行于感测层的平面定向的平面内部分和垂直于感测层的平面的平面外部分。 该方法包括感测平面外部分; 并感测平面内部件。