公开(公告)号：US20120009771A1

公开(公告)日：2012-01-12

申请号：US12833272

申请日：2010-07-09

申请人： Cyril Cabral, JR. ,  John M. Cotte ,  Dinesh R. Koli ,  Laura L. Kosbar ,  Mahadevaiyer Krishnan ,  Christian Lavoie ,  Stephen M. Rossnagel ,  Zhen Zhang

发明人： Cyril Cabral, JR. ,  John M. Cotte ,  Dinesh R. Koli ,  Laura L. Kosbar ,  Mahadevaiyer Krishnan ,  Christian Lavoie ,  Stephen M. Rossnagel ,  Zhen Zhang

IPC分类号： H01L21/3205

CPC分类号： H01L21/28512 ,  H01L21/28518 ,  H01L29/456

摘要： A method for formation of a segregated interfacial dopant layer at a junction between a semiconductor material and a silicide layer includes depositing a doped metal layer over the semiconductor material; annealing the doped metal layer and the semiconductor material, wherein the anneal causes a portion of the doped metal layer and a portion of the semiconductor material to react to form the silicide layer on the semiconductor material, and wherein the anneal further causes the segregated interfacial dopant layer to form between the semiconductor material and the silicide layer, the segregated interfacial dopant layer comprising dopants from the doped metal layer; and removing an unreacted portion of the doped metal layer from the silicide layer.

摘要翻译： 在半导体材料和硅化物层之间的结处形成分离的界面掺杂剂层的方法包括在半导体材料上沉积掺杂的金属层; 退火所述掺杂金属层和所述半导体材料，其中所述退火使所述掺杂金属层的一部分和所述半导体材料的一部分反应以在所述半导体材料上形成所述硅化物层，并且其中所述退火还导致所述分离的界面掺杂剂 层，以形成在半导体材料和硅化物层之间，分离的界面掺杂剂层包含来自掺杂金属层的掺杂剂; 以及从所述硅化物层去除所述掺杂金属层的未反应部分。

公开(公告)号：US08889537B2

公开(公告)日：2014-11-18

申请号：US12833272

申请日：2010-07-09

申请人： Cryil Cabral, Jr. ,  John M. Cotte ,  Dinesh R. Koli ,  Laura L. Kosbar ,  Mahadevaiyer Krishnan ,  Christian Lavoie ,  Stephen M. Rossnagel ,  Zhen Zhang

发明人： Cryil Cabral, Jr. ,  John M. Cotte ,  Dinesh R. Koli ,  Laura L. Kosbar ,  Mahadevaiyer Krishnan ,  Christian Lavoie ,  Stephen M. Rossnagel ,  Zhen Zhang

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L29/45

CPC分类号： H01L21/28512 ,  H01L21/28518 ,  H01L29/456

摘要： A method for formation of a segregated interfacial dopant layer at a junction between a semiconductor material and a silicide layer includes depositing a doped metal layer over the semiconductor material; annealing the doped metal layer and the semiconductor material, wherein the anneal causes a portion of the doped metal layer and a portion of the semiconductor material to react to form the silicide layer on the semiconductor material, and wherein the anneal further causes the segregated interfacial dopant layer to form between the semiconductor material and the silicide layer, the segregated interfacial dopant layer comprising dopants from the doped metal layer; and removing an unreacted portion of the doped metal layer from the silicide layer.

摘要翻译： 在半导体材料和硅化物层之间的结处形成分离的界面掺杂剂层的方法包括在半导体材料上沉积掺杂的金属层; 退火所述掺杂金属层和所述半导体材料，其中所述退火使所述掺杂金属层的一部分和所述半导体材料的一部分反应以在所述半导体材料上形成所述硅化物层，并且其中所述退火还导致所述分离的界面掺杂剂 层，以形成在半导体材料和硅化物层之间，分离的界面掺杂剂层包含来自掺杂金属层的掺杂剂; 以及从所述硅化物层去除所述掺杂金属层的未反应部分。

公开(公告)号：US07749898B2

公开(公告)日：2010-07-06

申请号：US12145163

申请日：2008-06-24

申请人： Paul R. Besser ,  Christian Lavoie ,  Cyril Cabral, Jr. ,  Stephen M. Rossnagel ,  Kenneth P. Rodbell

发明人： Paul R. Besser ,  Christian Lavoie ,  Cyril Cabral, Jr. ,  Stephen M. Rossnagel ,  Kenneth P. Rodbell

IPC分类号： H01L21/477

CPC分类号： H01L21/76889 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76879 ,  H01L21/76883 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/53271 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming an interconnect structure includes forming a dielectric layer above a first layer having a conductive region defined therein. An opening is defined in the dielectric layer to expose at least a portion of the conductive region. A metal silicide is formed in the opening to define the interconnect structure. A semiconductor device includes a first layer having a conductive region defined therein, a dielectric layer formed above the first layer, and a metal silicide interconnect structure extending through the dielectric layer to communicate with the conductive region.

摘要翻译： 形成互连结构的方法包括在其中限定有导电区域的第一层之上形成介电层。 在电介质层中限定开口以暴露导电区域的至少一部分。 在开口中形成金属硅化物以限定互连结构。 半导体器件包括其中限定有导电区域的第一层，形成在第一层之上的电介质层和延伸穿过介电层以与导电区域连通的金属硅化物互连结构。

公开(公告)号：US20090315182A1

公开(公告)日：2009-12-24

申请号：US12145163

申请日：2008-06-24

申请人： Paul R. Besser ,  Christian Lavoie ,  Cyril Cabral, JR. ,  Stephen M. Rossnagel ,  Kenneth P. Rodbell

发明人： Paul R. Besser ,  Christian Lavoie ,  Cyril Cabral, JR. ,  Stephen M. Rossnagel ,  Kenneth P. Rodbell

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H01L21/76889 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76879 ,  H01L21/76883 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/53271 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming an interconnect structure includes forming a dielectric layer above a first layer having a conductive region defined therein. An opening is defined in the dielectric layer to expose at least a portion of the conductive region. A metal silicide is formed in the opening to define the interconnect structure. A semiconductor device includes a first layer having a conductive region defined therein, a dielectric layer formed above the first layer, and a metal silicide interconnect structure extending through the dielectric layer to communicate with the conductive region.

摘要翻译： 形成互连结构的方法包括在其中限定有导电区域的第一层之上形成介电层。 在电介质层中限定开口以暴露导电区域的至少一部分。 在开口中形成金属硅化物以限定互连结构。 半导体器件包括其中限定有导电区域的第一层，形成在第一层之上的电介质层和延伸穿过介电层以与导电区域连通的金属硅化物互连结构。

公开(公告)号：US20090298244A1

公开(公告)日：2009-12-03

申请号：US12537275

申请日：2009-08-07

申请人： Bruce B. Doris ,  Cyril Cabral, JR. ,  Elizabeth A. Duch ,  Stephen M. Rossnagel ,  Michelle L. Steen

发明人： Bruce B. Doris ,  Cyril Cabral, JR. ,  Elizabeth A. Duch ,  Stephen M. Rossnagel ,  Michelle L. Steen

IPC分类号： H01L21/8238

CPC分类号： H01L21/823807 ,  H01L21/823842 ,  H01L29/4958 ,  H01L29/7845

摘要： NFET and PFET devices with separately stressed channel regions, and methods of their fabrication is disclosed. A FET is disclosed which includes a gate, which gate includes a metal in a first state of stress. The FET also includes a channel region hosted in a single crystal Si based material, which channel region is overlaid by the gate and is in a second state of stress. The second state of stress of the channel region is of an opposite sign than the first state of stress of the metal included in the gate. The NFET channel is usually in a tensile state of stress, while the PFET channel is usually in a compressive state of stress. The methods of fabrication include the deposition of metal layers by physical vapor deposition (PVD), in such manner that the layers are in stressed states.

摘要翻译： 具有单独应力通道区域的NFET和PFET器件及其制造方法。 公开了一种FET，其包括栅极，该栅极包括处于第一应力状态的金属。 FET还包括托管在单晶Si基材料中的沟道区域，该沟道区域被栅极覆盖并处于第二应力状态。 沟道区域的第二应力状态与包括在栅极中的金属的第一应力状态相反。 NFET通道通常处于应力的拉伸状态，而PFET通道通常处于应力的压缩状态。 制造方法包括通过物理气相沉积（PVD）沉积金属层，使得层处于应力状态。

公开(公告)号：US07378338B2

公开(公告)日：2008-05-27

申请号：US11461220

申请日：2006-07-31

申请人： Cyril Cabral, Jr. ,  Steffen K. Kaldor ,  Hyungjun Kim ,  Stephen M. Rossnagel

发明人： Cyril Cabral, Jr. ,  Steffen K. Kaldor ,  Hyungjun Kim ,  Stephen M. Rossnagel

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： In an interconnect structure of an integrated circuit, a diffusion barrier film in a damascene structure is formed of a film having the composition TaNx, where x is greater than 1.2 and with a thickness of 0.5 to 5 nm.

摘要翻译： 在集成电路的互连结构中，镶嵌结构中的扩散阻挡膜由具有组成TaN x x的膜形成，其中x大于1.2，厚度为0.5至5nm 。

公开(公告)号：US08212218B2

公开(公告)日：2012-07-03

申请号：US12627076

申请日：2009-11-30

申请人： Cyril Cabral, Jr. ,  Michael S. Gordon ,  Steven J. Koester ,  Conal E. Murray ,  Kenneth P. Rodbell ,  Stephen M. Rossnagel ,  Robert L. Wisnieff ,  Jeng-bang Yau

发明人： Cyril Cabral, Jr. ,  Michael S. Gordon ,  Steven J. Koester ,  Conal E. Murray ,  Kenneth P. Rodbell ,  Stephen M. Rossnagel ,  Robert L. Wisnieff ,  Jeng-bang Yau

IPC分类号： G01T1/02

CPC分类号： G01T1/026

摘要： A system for determining an amount of radiation includes a dosimeter configured to receive the amount of radiation, the dosimeter comprising a circuit having a resonant frequency, such that the resonant frequency of the circuit changes according to the amount of radiation received by the dosimeter, the dosimeter further configured to absorb RF energy at the resonant frequency of the circuit; a radio frequency (RF) transmitter configured to transmit the RF energy at the resonant frequency to the dosimeter; and a receiver configured to determine the resonant frequency of the dosimeter based on the absorbed RF energy, wherein the amount of radiation is determined based on the resonant frequency.

摘要翻译： 用于确定辐射量的系统包括配置成接收辐射量的剂量计，该剂量计包括具有谐振频率的电路，使得电路的谐振频率根据剂量计接收的辐射量而改变， 剂量计还被配置为吸收电路的谐振频率处的RF能量; 射频（RF）发射器，被配置为以共振频率将所述RF能量传输到所述剂量计; 以及接收器，被配置为基于所吸收的RF能量来确定所述剂量计的谐振频率，其中所述辐射量基于所述谐振频率来确定。

公开(公告)号：US06943097B2

公开(公告)日：2005-09-13

申请号：US10643534

申请日：2003-08-19

申请人： Cyril Cabral, Jr. ,  Hyungjun Kim ,  Stephen M. Rossnagel

发明人： Cyril Cabral, Jr. ,  Hyungjun Kim ,  Stephen M. Rossnagel

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L29/49

CPC分类号： H01L21/28088 ,  H01L21/28562 ,  H01L21/32053 ,  H01L21/76841 ,  H01L29/4966 ,  H01L2221/1078

摘要： The present invention provides metallic films containing a Group IVB or VB metal, silicon and optionally nitrogen by utilizing atomic layer deposition (ALD). In particularly, the present invention provides a low temperature thermal ALD method of forming metallic silicides and a plasma-enhanced atomic layer deposition (PE-ALD) method of forming metallic silicon nitride film. The methods of the present invention are capable of forming metallic films having a thickness of a monolayer or less on the surface of a substrate. The metallic films provided in the present invention can be used for contact metallization, metal gates or as a diffusion barrier.

摘要翻译： 本发明通过利用原子层沉积（ALD）提供含有IVB族或VB族金属，硅和任选的氮的金属膜。 特别地，本发明提供形成金属硅化物的低温热ALD方法和形成金属氮化硅膜的等离子体增强原子层沉积（PE-ALD）方法。 本发明的方法能够在基材的表面上形成厚度为单层或更薄的金属膜。 本发明中提供的金属膜可用于接触金属化，金属栅极或扩散阻挡层。

公开(公告)号：US20110127438A1

公开(公告)日：2011-06-02

申请号：US12627076

申请日：2009-11-30

申请人： Cyril Cabral, JR. ,  Michael S. Gordon ,  Steven J. Koester ,  Conal E. Murray ,  Kenneth P. Rodbell ,  Stephen M. Rossnagel ,  Robert L. Wisnieff ,  Jeng-bang Yau

发明人： Cyril Cabral, JR. ,  Michael S. Gordon ,  Steven J. Koester ,  Conal E. Murray ,  Kenneth P. Rodbell ,  Stephen M. Rossnagel ,  Robert L. Wisnieff ,  Jeng-bang Yau

IPC分类号： G01T1/02 ,  G01T3/00

CPC分类号： G01T1/026

摘要： A system for determining an amount of radiation includes a dosimeter configured to receive the amount of radiation, the dosimeter comprising a circuit having a resonant frequency, such that the resonant frequency of the circuit changes according to the amount of radiation received by the dosimeter, the dosimeter further configured to absorb RF energy at the resonant frequency of the circuit; a radio frequency (RF) transmitter configured to transmit the RF energy at the resonant frequency to the dosimeter; and a receiver configured to determine the resonant frequency of the dosimeter based on the absorbed RF energy, wherein the amount of radiation is determined based on the resonant frequency.

摘要翻译： 用于确定辐射量的系统包括配置成接收辐射量的剂量计，该剂量计包括具有谐振频率的电路，使得电路的谐振频率根据剂量计接收的辐射量而改变， 剂量计还被配置为吸收电路的谐振频率处的RF能量; 射频（RF）发射器，被配置为以共振频率将所述RF能量传输到所述剂量计; 以及接收器，被配置为基于所吸收的RF能量来确定所述剂量计的谐振频率，其中所述辐射量基于所述谐振频率来确定。

公开(公告)号：US07998842B2

公开(公告)日：2011-08-16

申请号：US11214211

申请日：2005-08-29

申请人： Cyril Cabral, Jr. ,  Hyungjun Kim ,  Stephen M. Rossnagel

发明人： Cyril Cabral, Jr. ,  Hyungjun Kim ,  Stephen M. Rossnagel

IPC分类号： H01L21/285

CPC分类号： H01L21/28088 ,  H01L21/28562 ,  H01L21/32053 ,  H01L21/76841 ,  H01L29/4966 ,  H01L2221/1078

摘要： The present invention provides metallic films containing a Group IVB or VB metal, silicon and optionally nitrogen by utilizing atomic layer deposition (ALD). In particularly, the present invention provides a low temperature thermal ALD method of forming metallic silicides and a plasma-enhanced atomic layer deposition (PE-ALD) method of forming metallic silicon nitride film. The methods of the present invention are capable of forming metallic films having a thickness of a monolayer or less on the surface of a substrate. The metallic films provided in the present invention can be used for contact metallization, metal gates or as a diffusion barrier.

摘要翻译： 本发明通过利用原子层沉积（ALD）提供含有IVB族或VB族金属，硅和任选的氮的金属膜。 特别地，本发明提供形成金属硅化物的低温热ALD方法和形成金属氮化硅膜的等离子体增强原子层沉积（PE-ALD）方法。 本发明的方法能够在基材的表面上形成厚度为单层或更薄的金属膜。 本发明中提供的金属膜可用于接触金属化，金属栅极或扩散阻挡层。