公开(公告)号：US20090014878A1

公开(公告)日：2009-01-15

申请号：US12130381

申请日：2008-05-30

申请人： Cyril Cabral, JR. ,  Hariklia Deligianni ,  Randolph F. Knarr ,  Sandra G. Malhotra ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Anna Topol ,  Philippe M. Vereecken

发明人： Cyril Cabral, JR. ,  Hariklia Deligianni ,  Randolph F. Knarr ,  Sandra G. Malhotra ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Anna Topol ,  Philippe M. Vereecken

IPC分类号： H01L23/52 ,  H01L21/4763

CPC分类号： H01L23/485 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76877 ,  H01L23/53252 ,  H01L2924/0002 ,  H01L2924/00

摘要： A contact metallurgy structure comprising a patterned dielectric layer having cavities on a substrate; a silicide or germanide layer such as of cobalt and/or nickel located at the bottom of cavities; a contact layer comprising Ti or Ti/TiN located on top of the dielectric layer and inside the cavities and making contact to the silicide or germanide layer on the bottom; a diffusion barrier layer located on top of the contact layer and inside the cavities; optionally a seed layer for plating located on top of the barrier layer; a metal fill layer in vias is provided along with a method of fabrication. The metal fill layer is electrodeposited with at least one member selected from the group consisting of copper, rhodium, ruthenium, iridium, molybdenum, gold, silver, nickel, cobalt, silver, gold, cadmium and zinc and alloys thereof. When the metal fill layer is rhodium, ruthenium, or iridium, an effective diffusion barrier layer is not required between the fill metal and the dielectric. When the barrier layer is platable, such as ruthenium, rhodium, platinum, or iridium, the seed layer is not required.

摘要翻译： 一种接触式冶金结构，包括在基底上具有空腔的图案化电介质层; 位于空腔底部的硅化物或锗化物层，例如钴和/或镍; 接触层，其包含位于介电层顶部并且在空腔内并与底部的硅化物或锗化物层接触的Ti或Ti / TiN; 位于所述接触层顶部和所述空腔内的扩散阻挡层; 可选地，位于阻挡层顶部的用于电镀的种子层; 提供通孔中的金属填充层以及制造方法。 金属填充层用选自铜，铑，钌，铱，钼，金，银，镍，钴，银，金，镉和锌中的至少一种电池和其合金电沉积。 当金属填充层是铑，钌或铱时，在填充金属和电介质之间不需要有效的扩散阻挡层。 当阻挡层是可镀的，例如钌，铑，铂或铱时，不需要种子层。

公开(公告)号：US07405154B2

公开(公告)日：2008-07-29

申请号：US11308433

申请日：2006-03-24

申请人： Cyril Cabral, Jr. ,  Hariklia Deligianni ,  Randolph F. Knarr ,  Sandra G. Malhotra ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Anna Topol ,  Philippe M. Vereecken

发明人： Cyril Cabral, Jr. ,  Hariklia Deligianni ,  Randolph F. Knarr ,  Sandra G. Malhotra ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Anna Topol ,  Philippe M. Vereecken

IPC分类号： H01L21/4763

CPC分类号： H01L23/485 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76877 ,  H01L23/53252 ,  H01L2924/0002 ,  H01L2924/00

摘要： A contact metallurgy structure comprising a patterned dielectric layer having cavities on a substrate; a silicide or germanide layer such as of cobalt and/or nickel located at the bottom of cavities; a contact layer comprising Ti or Ti/TiN located on top of the dielectric layer and inside the cavities and making contact to the silicide or germanide layer on the bottom; a diffusion barrier layer located on top of the contact layer and inside the cavities; optionally a seed layer for plating located on top of the barrier layer; a metal fill layer in vias is provided along with a method of fabrication. The metal fill layer is electrodeposited with at least one member selected from the group consisting of copper, rhodium, ruthenium, iridium, molybdenum, gold, silver, nickel, cobalt, silver, gold, cadmium and zinc and alloys thereof. When the metal fill layer is rhodium, ruthenium, or iridium, an effective diffusion barrier layer is not required between the fill metal and the dielectric. When the barrier layer is platable, such as ruthenium, rhodium, platinum, or iridium, the seed layer is not required.

摘要翻译： 一种接触式冶金结构，包括在基底上具有空腔的图案化电介质层; 位于空腔底部的硅化物或锗化物层，例如钴和/或镍; 接触层，其包含位于介电层顶部并且在空腔内并与底部的硅化物或锗化物层接触的Ti或Ti / TiN; 位于所述接触层顶部和所述空腔内的扩散阻挡层; 可选地，位于阻挡层顶部的用于电镀的种子层; 提供通孔中的金属填充层以及制造方法。 金属填充层用选自铜，铑，钌，铱，钼，金，银，镍，钴，银，金，镉和锌中的至少一种电池和其合金电沉积。 当金属填充层是铑，钌或铱时，在填充金属和电介质之间不需要有效的扩散阻挡层。 当阻挡层是可镀的，例如钌，铑，铂或铱时，不需要种子层。

公开(公告)号：US20110084393A1

公开(公告)日：2011-04-14

申请号：US12967633

申请日：2010-12-14

申请人： Cyril Cabral, JR. ,  Hariklia Deligianni ,  Randolph F. Knarr ,  Sandra G. Malhotra ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Anna Topol ,  Philippe M. Vereecken

发明人： Cyril Cabral, JR. ,  Hariklia Deligianni ,  Randolph F. Knarr ,  Sandra G. Malhotra ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Anna Topol ,  Philippe M. Vereecken

IPC分类号： H01L23/48

CPC分类号： H01L23/485 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76877 ,  H01L23/53252 ,  H01L2924/0002 ,  H01L2924/00

摘要： A contact metallurgy structure comprising a patterned dielectric layer having vias on a substrate; a silicide layer of cobalt and/or nickel located at the bottom of vias; a contact layer comprising Ti located in vias on top of the silicide layer; a diffusion layer located in vias and on top of the contact layer; a metal fill layer in vias is provided along with a method of fabrication. The metal fill layer comprises at least one member selected from the group consisting of copper, ruthenium, rhodium platinum, palladium, iridium, rhenium, tungsten, gold, silver and osmium and alloys thereof. When the metal fill layer comprises rhodium, the diffusion layer is not required. Optionally a seed layer for the metal fill layer can be employed.

摘要翻译： 一种接触式冶金结构，包括在衬底上具有通孔的图案化介电层; 位于通孔底部的钴和/或镍的硅化物层; 包含位于硅化物层顶部的通孔中的Ti的接触层; 位于所述接触层的通孔和顶部的扩散层; 提供通孔中的金属填充层以及制造方法。 金属填充层包括选自铜，钌，铑铂，钯，铱，铼，钨，金，银和锇中的至少一种以及它们的合金。 当金属填充层包含铑时，不需要扩散层。 任选地，可以使用用于金属填充层的种子层。

公开(公告)号：US08089157B2

公开(公告)日：2012-01-03

申请号：US12967633

申请日：2010-12-14

申请人： Cyril Cabral, Jr. ,  Hariklia Deligianni ,  Randolph F. Knarr ,  Sandra G. Malhotra ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Anna Topol ,  Philippe M. Vereecken

发明人： Cyril Cabral, Jr. ,  Hariklia Deligianni ,  Randolph F. Knarr ,  Sandra G. Malhotra ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Anna Topol ,  Philippe M. Vereecken

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/485 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76877 ,  H01L23/53252 ,  H01L2924/0002 ,  H01L2924/00

摘要： A contact metallurgy structure comprising a patterned dielectric layer having vias on a substrate; a silicide layer of cobalt and/or nickel located at the bottom of vias; a contact layer comprising Ti located in vias on top of the silicide layer; a diffusion layer located in vias and on top of the contact layer; a metal fill layer in vias is provided along with a method of fabrication. The metal fill layer comprises at least one member selected from the group consisting of copper, ruthenium, rhodium platinum, palladium, iridium, rhenium, tungsten, gold, silver and osmium and alloys thereof. When the metal fill layer comprises rhodium, the diffusion layer is not required. Optionally a seed layer for the metal fill layer can be employed.

摘要翻译： 一种接触式冶金结构，包括在衬底上具有通孔的图案化介电层; 位于通孔底部的钴和/或镍的硅化物层; 包含位于硅化物层顶部的通孔中的Ti的接触层; 位于接触层的通孔和顶部的扩散层; 提供通孔中的金属填充层以及制造方法。 金属填充层包括选自铜，钌，铑铂，钯，铱，铼，钨，金，银和锇中的至少一种及其合金。 当金属填充层包含铑时，不需要扩散层。 任选地，可以使用用于金属填充层的种子层。

公开(公告)号：US07851357B2

公开(公告)日：2010-12-14

申请号：US12130381

申请日：2008-05-30

申请人： Cyril Cabral, Jr. ,  Lili Deligianni ,  Randolph F. Knarr ,  Sandra G. Malhotra ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Anna Topol ,  Philippe M. Vereecken

发明人： Cyril Cabral, Jr. ,  Lili Deligianni ,  Randolph F. Knarr ,  Sandra G. Malhotra ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Anna Topol ,  Philippe M. Vereecken

IPC分类号： H01L21/4763

CPC分类号： H01L23/485 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76877 ,  H01L23/53252 ,  H01L2924/0002 ,  H01L2924/00

摘要： A contact metallurgy structure comprising a patterned dielectric layer having cavities on a substrate; a silicide or germanide layer such as of cobalt and/or nickel located at the bottom of cavities; a contact layer comprising Ti or Ti/TiN located on top of the dielectric layer and inside the cavities and making contact to the silicide or germanide layer on the bottom; a diffusion barrier layer located on top of the contact layer and inside the cavities; optionally a seed layer for plating located on top of the barrier layer; a metal fill layer in vias is provided along with a method of fabrication. The metal fill layer is electrodeposited with at least one member selected from the group consisting of copper, rhodium, ruthenium, iridium, molybdenum, gold, silver, nickel, cobalt, silver, gold, cadmium and zinc and alloys thereof. When the metal fill layer is rhodium, ruthenium, or iridium, an effective diffusion barrier layer is not required between the fill metal and the dielectric. When the barrier layer is platable, such as ruthenium, rhodium, platinum, or iridium, the seed layer is not required.

摘要翻译： 一种接触式冶金结构，包括在基底上具有空腔的图案化电介质层; 位于空腔底部的硅化物或锗化物层，例如钴和/或镍; 接触层，其包含位于介电层顶部并且在空腔内并且与底部上的硅化物或锗化物层接触的Ti或Ti / TiN; 位于所述接触层顶部和所述空腔内的扩散阻挡层; 可选地，位于阻挡层顶部的用于电镀的种子层; 提供通孔中的金属填充层以及制造方法。 金属填充层用选自铜，铑，钌，铱，钼，金，银，镍，钴，银，金，镉和锌中的至少一种电池和其合金电沉积。 当金属填充层是铑，钌或铱时，在填充金属和电介质之间不需要有效的扩散阻挡层。 当阻挡层是可镀的，例如钌，铑，铂或铱时，不需要种子层。

公开(公告)号：US08101518B2

公开(公告)日：2012-01-24

申请号：US12136885

申请日：2008-06-11

申请人： Cyril Cabral, Jr. ,  Michael A. Cobb ,  Asa Frye ,  Balasubramanian S. Pranatharthi Haran ,  Randolph F. Knarr ,  Mahadevaiyer Krishnan ,  Christian Lavoie ,  Andrew P. Mansson ,  Renee T. Mo ,  Jay W. Strane ,  Horatio S. Wildman

发明人： Cyril Cabral, Jr. ,  Michael A. Cobb ,  Asa Frye ,  Balasubramanian S. Pranatharthi Haran ,  Randolph F. Knarr ,  Mahadevaiyer Krishnan ,  Christian Lavoie ,  Andrew P. Mansson ,  Renee T. Mo ,  Jay W. Strane ,  Horatio S. Wildman

IPC分类号： H01L21/44

CPC分类号： H01L21/28518 ,  H01L21/28052 ,  H01L29/665

摘要： The present invention provides a method for forming a self-aligned Ni alloy silicide contact. The method of the present invention begins by first depositing a conductive Ni alloy with Pt and optionally at least one of the following metals Pd, Rh, Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W or Re over an entire semiconductor structure which includes at least one gate stack region. An oxygen diffusion barrier comprising, for example, Ti, TiN or W is deposited over the structure to prevent oxidation of the metals. An annealing step is then employed to cause formation of a NiSi, PtSi contact in regions in which the metals are in contact with silicon. The metal that is in direct contact with insulating material such as SiO2 and Si3N4 is not converted into a metal alloy silicide contact during the annealing step A. selective etching step is then performed to remove unreacted metal from the sidewalls of the spacers and trench isolation regions.

摘要翻译： 本发明提供一种形成自对准Ni合金硅化物接触的方法。 本发明的方法首先首先用Pt和任选的以下金属Pd，Rh，Ti，V，Cr，Zr，Nb，Mo，Hf，Ta，W或Re中的至少一种沉积导电Ni合金， 整个半导体结构，其包括至少一个栅极堆叠区域。 包含例如Ti，TiN或W的氧扩散阻挡层沉积在结构上以防止金属的氧化。 然后使用退火步骤在金属与硅接触的区域中形成NiSi，PtSi接触。 在退火步骤A期间，与绝缘材料（例如SiO 2和Si 3 N 4）直接接触的金属不会转化为金属合金硅化物接触。然后进行选择性蚀刻步骤以从间隔物和沟槽隔离区域的侧壁去除未反应的金属 。

公开(公告)号：US07544610B2

公开(公告)日：2009-06-09

申请号：US10935497

申请日：2004-09-07

申请人： Cyril Cabral, Jr. ,  Michael A. Cobb ,  Asa Frye ,  Balasubramanian S. Pranatharthi Haran ,  Randolph F. Knarr ,  Mahadevaiyer Krishnan ,  Christian Lavoie ,  Andrew P. Mansson ,  Renee T. Mo ,  Jay W. Strane ,  Horatio S. Wildman

发明人： Cyril Cabral, Jr. ,  Michael A. Cobb ,  Asa Frye ,  Balasubramanian S. Pranatharthi Haran ,  Randolph F. Knarr ,  Mahadevaiyer Krishnan ,  Christian Lavoie ,  Andrew P. Mansson ,  Renee T. Mo ,  Jay W. Strane ,  Horatio S. Wildman

IPC分类号： H01L21/477 ,  H01L21/441

CPC分类号： H01L21/28518 ,  H01L21/28052 ,  H01L29/665

摘要： The present invention provides a method for forming a self-aligned Ni alloy silicide contact. The method of the present invention begins by first depositing a conductive Ni alloy with Pt and optionally at least one of the following metals Pd, Rh, Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W or Re over an entire semiconductor structure which includes at least one gate stack region. An oxygen diffusion barrier comprising, for example, Ti, TiN or W is deposited over the structure to prevent oxidation of the metals. An annealing step is then employed to cause formation of a NiSi, PtSi contact in regions in which the metals are in contact with silicon. The metal that is in direct contact with insulating material such as SiO2 and Si3N4 is not converted into a metal alloy silicide contact during the annealing step. A selective etching step is then performed to remove unreacted metal from the sidewalls of the spacers and trench isolation regions.

摘要翻译： 本发明提供一种形成自对准Ni合金硅化物接触的方法。 本发明的方法首先首先用Pt和任选的以下金属Pd，Rh，Ti，V，Cr，Zr，Nb，Mo，Hf，Ta，W或Re中的至少一种沉积导电Ni合金， 整个半导体结构，其包括至少一个栅极堆叠区域。 包含例如Ti，TiN或W的氧扩散阻挡层沉积在结构上以防止金属的氧化。 然后使用退火步骤在金属与硅接触的区域中形成NiSi，PtSi接触。 在绝缘材料如SiO 2和Si 3 N 4中直接接触的金属在退火步骤期间不会转化为金属合金硅化物接触。 然后执行选择性蚀刻步骤以从间隔物和沟槽隔离区域的侧壁去除未反应的金属。

公开(公告)号：US07498256B2

公开(公告)日：2009-03-03

申请号：US11465865

申请日：2006-08-21

申请人： Randolph F. Knarr ,  Christopher D. Sheraw ,  Andrew H. Simon ,  Anna Topol ,  Yun-Yu Wang ,  Keith Kwong Hon Wong

发明人： Randolph F. Knarr ,  Christopher D. Sheraw ,  Andrew H. Simon ,  Anna Topol ,  Yun-Yu Wang ,  Keith Kwong Hon Wong

IPC分类号： H01L21/00

CPC分类号： H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

摘要： Contact via structures using a hybrid barrier layer, are disclosed. One contact via structure includes: an opening through a dielectric to a silicide region; a first layer in the opening in direct contact with the silicide region, wherein the first layer is selected from the group consisting of: titanium (Ti) and tungsten nitride (WN); at least one second layer over the first layer, the at least one second layer selected from the group consisting of: tantalum nitride (TaN), titanium nitride (TiN), tantalum (Ta), ruthenium (Ru), rhodium (Rh), platinum (Pt) and cobalt (Co); a seed layer for copper (Cu); and copper (Cu) filling a remaining portion of the opening.

摘要翻译： 公开了通过使用混合阻挡层的结构的接触。 一个接触通孔结构包括：通过电介质到硅化物区的开口; 与所述硅化物区直接接触的所述开口中的第一层，其中所述第一层选自：钛（Ti）和氮化钨（WN）; 在第一层上的至少一个第二层，选自氮化钽（TaN），氮化钛（TiN），钽（Ta），钌（Ru），铑（Rh），铑 铂（Pt）和钴（Co）; 铜（Cu）种子层; 和填充开口的剩余部分的铜（Cu）。

公开(公告)号：US20080042291A1

公开(公告)日：2008-02-21

申请号：US11465865

申请日：2006-08-21

申请人： Randolph F. Knarr ,  Christopher D. Sheraw ,  Andrew H. Simon ,  Anna Topol ,  Yun-Yu Wang ,  Keith Kwong Hon Wong

发明人： Randolph F. Knarr ,  Christopher D. Sheraw ,  Andrew H. Simon ,  Anna Topol ,  Yun-Yu Wang ,  Keith Kwong Hon Wong

IPC分类号： H01L23/48

CPC分类号： H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

摘要： Contact via structures using a hybrid barrier layer, are disclosed. One contact via structure includes: an opening through a dielectric to a silicide region; a first layer in the opening in direct contact with the silicide region, wherein the first layer is selected from the group consisting of: titanium (Ti) and tungsten nitride (WN); at least one second layer over the first layer, the at least one second layer selected from the group consisting of: tantalum nitride (TaN), titanium nitride (TiN), tantalum (Ta), ruthenium (Ru), rhodium (Rh), platinum (Pt) and cobalt (Co); a seed layer for copper (Cu); and copper (Cu) filling a remaining portion of the opening.

摘要翻译： 公开了通过使用混合阻挡层的结构的接触。 一个接触通孔结构包括：通过电介质到硅化物区的开口; 与所述硅化物区直接接触的所述开口中的第一层，其中所述第一层选自：钛（Ti）和氮化钨（WN）; 在第一层上的至少一个第二层，选自氮化钽（TaN），氮化钛（TiN），钽（Ta），钌（Ru），铑（Rh），铑 铂（Pt）和钴（Co）; 铜（Cu）种子层; 和填充开口的剩余部分的铜（Cu）。

公开(公告)号：US06992389B2

公开(公告)日：2006-01-31

申请号：US10709321

申请日：2004-04-28

申请人： Panayotis C. Andricacos ,  Tien-Jen J. Cheng ,  Emanuel I. Cooper ,  David E. Eichstadt ,  Jonathan H. Griffith ,  Randolph F. Knarr ,  Roger A. Quon ,  Erik J. Roggeman

发明人： Panayotis C. Andricacos ,  Tien-Jen J. Cheng ,  Emanuel I. Cooper ,  David E. Eichstadt ,  Jonathan H. Griffith ,  Randolph F. Knarr ,  Roger A. Quon ,  Erik J. Roggeman

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L21/60 ,  H01L23/485

CPC分类号： H01L21/2885 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05155 ,  H01L2224/05647 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2924/0001 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/01028 ,  H01L2924/00014

摘要： A method of creating a multi-layered barrier for use in an interconnect, a barrier for an interconnect, and an interconnect including the barrier are disclosed. The method includes creating the multi-layered barrier in a recess of the device terminal by use of a single electroplating chemistry to enhance protection against voiding and de-lamination due to the diffusion of copper, whether by self-diffusion or electro-migration. The barrier includes at least a first layer of nickel-rich material and a second layer of copper-rich material. The barrier enables use of higher current densities for advanced complementary metal-oxide semiconductors (CMOS) designs, and extends the reliability of current CMOS designs regardless of solder selection. Moreover, this technology is easily adapted to current methods of fabricating electroplated interconnects such as C4s.

摘要翻译： 创建用于在互连中使用的多层屏障的方法，用于互连的阻挡，以及包括该阻挡互连中公开。 该方法包括通过使用单个电镀化学品在器件端子的凹部中产生多层屏障，以增强由于铜的扩散而导致的排除和去层压的保护，无论是通过自扩散还是电迁移。 所述屏障至少包括富镍材料制成的第一层和富铜材料制成的第二层。 该屏障允许使用用于高级互补金属氧化物半导体（CMOS）的设计更高的电流密度的，并延伸当前的CMOS的可靠性设计不管焊料选择。 此外，这种技术很容易适应制造电镀互连，如C4S的当前方法。