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公开(公告)号：US06448131B1
公开(公告)日：2002-09-10
申请号：US09929182
申请日：2001-08-14
申请人： Cyril Cabral, Jr. , Kevin K. Chan , Guy M. Cohen , Ramachandra Divakaruni , Christian Lavoie , Fenton R. McFeely
发明人： Cyril Cabral, Jr. , Kevin K. Chan , Guy M. Cohen , Ramachandra Divakaruni , Christian Lavoie , Fenton R. McFeely
IPC分类号： H01L218242
CPC分类号： H01L27/1087 , H01L28/84 , H01L29/66181 , Y10S438/964
摘要： A method for increasing the trench capacitor surface area is provided. The method, which utilizes a metal silicide to roughen the trench walls, increases capacitance due to the increase in the trench surface area after the silicide has been removed. The roughening of the trench walls can be controlled by varying one or more of the following parameters: the density of the metal, the metal film thickness, the silicide phase, and the choice of the metal. Once the metal is deposited in the trench, the method is self-limited. Shrinking the trench to its original width can be obtained by subsequent silicon deposition or by diffusion of silicon from a cap layer through the silicide.
摘要翻译： 提供了一种用于增加沟槽电容器表面积的方法。 利用金属硅化物粗糙化沟槽壁的方法由于硅化物被去除之后的沟槽表面积的增加而增加了电容。 可以通过改变一个或多个以下参数来控制沟槽壁的粗糙化：金属的密度，金属膜厚度，硅化物相以及金属的选择。 一旦金属沉积在沟槽中，该方法是自限制的。 通过随后的硅沉积或通过硅化物从盖层扩散硅可以获得将沟槽缩小至原始宽度。
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2.发明授权High temperature processing compatible metal gate electrode for pFETS and methods for fabrication 有权用于pFETS的高温处理兼容金属栅电极及其制造方法公开(公告)号：US07863083B2
公开(公告)日：2011-01-04
申请号：US12197845
申请日：2008-08-25
申请人： Ricky Amos , Douglas A. Buchanan , Cyril Cabral, Jr. , Alessandro C. Callegari , Supratik Guha , Hyungjun Kim , Fenton R. McFeely , Vijay Narayanan , Kenneth P. Rodbell , John J. Yurkas
发明人： Ricky Amos , Douglas A. Buchanan , Cyril Cabral, Jr. , Alessandro C. Callegari , Supratik Guha , Hyungjun Kim , Fenton R. McFeely , Vijay Narayanan , Kenneth P. Rodbell , John J. Yurkas
IPC分类号： H01L21/00 , H01L21/76 , H01L21/266 , H01L21/425
CPC分类号： H01L29/495 , H01L21/28079 , H01L21/3003
摘要： A method for fabricating a CMOS gate electrode by using Re, Rh, Pt, Ir or Ru metal and a CMOS structure that contains such gate electrodes are described. The work functions of these metals make them compatible with current pFET requirements. For instance, the metal can withstand the high hydrogen pressures necessary to produce properly passivated interfaces without undergoing chemical changes. The thermal stability of the metal on dielectric layers such as SiO2, Al2O3 and other suitable dielectric materials makes it compatible with post-processing temperatures up to 1000° C. A low temperature/low pressure CVD technique with Re2(CO)10 as the source material is used when Re is to be deposited.
摘要翻译： 描述了通过使用Re，Rh，Pt，Ir或Ru金属制造CMOS栅电极的方法和包含这种栅电极的CMOS结构。 这些金属的工作功能使其与当前的pFET要求兼容。 例如，金属可以承受生产适当钝化界面而不经历化学变化所需的高氢气压力。 金属在介电层上的热稳定性如SiO 2，Al 2 O 3和其它合适的介电材料使其与后处理温度高达1000℃相兼容。具有Re2（CO）10作为源的低温/低压CVD技术 当Re沉积时使用材料。
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3.发明申请High Temperature Processing Compatible Metal Gate Electrode For pFETS and Methods For Fabrication 有权用于pFET的高温加工兼容金属栅电极和制造方法公开(公告)号：US20080311745A1
公开(公告)日：2008-12-18
申请号：US12197845
申请日：2008-08-25
申请人： Ricky Amos , Douglas A. Buchanan , Cyril Cabral, JR. , Alessandro C. Callegari , Supratik Guha , Hyungjun Kim , Fenton R. McFeely , Vijay Narayanan , Kenneth P. Rodbell , John J. Yurkas
发明人： Ricky Amos , Douglas A. Buchanan , Cyril Cabral, JR. , Alessandro C. Callegari , Supratik Guha , Hyungjun Kim , Fenton R. McFeely , Vijay Narayanan , Kenneth P. Rodbell , John J. Yurkas
IPC分类号： H01L21/44
CPC分类号： H01L29/495 , H01L21/28079 , H01L21/3003
摘要： A method for fabricating a CMOS gate electrode by using Re, Rh, Pt, Ir or Ru metal and a CMOS structure that contains such gate electrodes are described. The work functions of these metals make them compatible with current pFET requirements. For instance, the metal can withstand the high hydrogen pressures necessary to produce properly passivated interfaces without undergoing chemical changes. The thermal stability of the metal on dielectric layers such as SiO2, Al2O3 and other suitable dielectric materials makes it compatible with post-processing temperatures up to 1000° C. A low temperature/low pressure CVD technique with Re2(CO)10 as the source material is used when Re is to be deposited.
摘要翻译： 描述了通过使用Re，Rh，Pt，Ir或Ru金属制造CMOS栅电极的方法和包含这种栅电极的CMOS结构。 这些金属的工作功能使其与当前的pFET要求兼容。 例如，金属可以承受生产适当钝化界面而不经历化学变化所需的高氢气压力。 金属在介电层上的热稳定性如SiO 2，Al 2 O 3和其它合适的介电材料使其与后处理温度高达1000℃相兼容。具有Re2（CO）10作为源的低温/低压CVD技术 当Re沉积时使用材料。
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4.发明授权Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures 有权氧化铪和/或氧化锆的沉积和钝化电子结构的制造公开(公告)号：US07566938B2
公开(公告)日：2009-07-28
申请号：US11281032
申请日：2005-11-17
申请人： Cyril Cabral, Jr. , Alessandro C. Callegari , Michael A. Gribelyuk , Paul C. Jamison , Dianne L. Lacey , Fenton R. McFeely , Vijay Narayanan , Deborah A. Neumayer , Pushkar Ranade , Sufi Zafar
发明人： Cyril Cabral, Jr. , Alessandro C. Callegari , Michael A. Gribelyuk , Paul C. Jamison , Dianne L. Lacey , Fenton R. McFeely , Vijay Narayanan , Deborah A. Neumayer , Pushkar Ranade , Sufi Zafar
IPC分类号： H01L29/76
CPC分类号： H01L21/02181 , C23C16/405 , C23C16/56 , H01L21/02189 , H01L21/02205 , H01L21/02271 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/31604 , H01L21/823857 , H01L27/0805 , H01L29/495 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66545 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating hafnium oxide and/or zirconium oxide films is provided. The methods include providing a mixture of Hf and/or Zr alkoxide dissolved, emulsified or suspended in a liquid; vaporizing at least the alkoxide and depositing the vaporized component at a temperature of greater than 400° C. The resultant film is dense, microcrystalline and is capable of self-passivation when treated in a hydrogen plasma or forming gas anneal.
摘要翻译： 提供了一种制造氧化铪和/或氧化锆膜的方法。 所述方法包括提供溶解，乳化或悬浮在液体中的Hf和/或Zr醇盐的混合物; 至少蒸发醇盐并在大于400℃的温度下沉积蒸发的组分。所得膜是致密的，微晶的，并且当在氢等离子体中处理或形成气体退火时能够自钝化。
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公开(公告)号：US06982230B2
公开(公告)日：2006-01-03
申请号：US10291334
申请日：2002-11-08
申请人： Cyril Cabral, Jr. , Alessandro C. Callegari , Michael A. Gribelyuk , Paul C. Jamison , Dianne L. Lacey , Fenton R. McFeely , Vijay Narayanan , Deborah A. Neumayer , Pushkar Ranade , Sufi Zafar
发明人： Cyril Cabral, Jr. , Alessandro C. Callegari , Michael A. Gribelyuk , Paul C. Jamison , Dianne L. Lacey , Fenton R. McFeely , Vijay Narayanan , Deborah A. Neumayer , Pushkar Ranade , Sufi Zafar
IPC分类号： H01L21/31
CPC分类号： H01L21/02181 , C23C16/405 , C23C16/56 , H01L21/02189 , H01L21/02205 , H01L21/02271 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/31604 , H01L21/823857 , H01L27/0805 , H01L29/495 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66545 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating hafnium oxide and/or zirconium oxide films is provided. The methods include providing a mixture of Hf and/or Zr alkoxide dissolved, emulsified or suspended in a liquid; vaporizing at least the alkoxide and depositing the vaporized component at a temperature of greater than 400° C. The resultant film is dense, microcrystalline and is capable of self-passivation when treated in a hydrogen plasma or forming gas anneal.
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公开(公告)号：US06579614B2
公开(公告)日：2003-06-17
申请号：US09814766
申请日：2001-03-23
IPC分类号： B32B900
CPC分类号： C23C16/56 , H01L21/28008 , H01L21/32053 , H01L21/3211 , H01L29/4908 , Y10T428/12576 , Y10T428/12583 , Y10T428/12674 , Y10T428/1284 , Y10T428/265
摘要： A method of treating structures (and the structure formed thereby), so as to prevent or retard the oxidation of a metal film, and/or prevent its delamination a substrate, includes providing a structure including a refractory metal film formed on a substrate, placing the structure into a vessel having a base pressure below approximately 10−7 torr, exposing the structure to a silane gas at a sufficiently high predetermined temperature and predetermined pressure to cause formation of a metal silicide layer on the refractory metal film, and exposing the structure to a second gas at a sufficiently high temperature and pressure to nitride the metal silicide layer into a nitrided layer.
摘要翻译： 一种处理结构（及其形成的结构）的方法，以防止或延缓金属膜的氧化和/或防止其基板的分层，包括提供包括在基板上形成的难熔金属膜的结构，放置 将结构转换成基本压力低于约10 -7乇的容器，将结构暴露于足够高的预定温度和预定压力下的硅烷气体，以在难熔金属膜上形成金属硅化物层，并使结构暴露 以足够高的温度和压力将第二气体氮化成氮化层。
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7.发明授权公开(公告)号：US07145212B2
公开(公告)日：2006-12-05
申请号：US10868791
申请日：2004-06-17
IPC分类号： H01L29/76
CPC分类号： H01L29/66772 , H01L21/76251 , H01L29/78648
摘要： A method (and resultant structure) of forming a semiconductor device, includes forming a metal-back-gate over a substrate and a metal back-gate, forming a passivation layer on the metal back-gate to prevent the metal back-gate from reacting with radical species, and providing an intermediate gluing layer between the substrate and the metal back-gate to enhance adhesion.
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8.发明授权Method for protecting refractory metal thin film requiring high temperature processing in an oxidizing atmosphere and structure formed thereby 失效用于保护在氧化气氛中需要高温处理的难熔金属薄膜和由此形成的结构的方法公开(公告)号：US06238737B1
公开(公告)日：2001-05-29
申请号：US09337550
申请日：1999-06-22
IPC分类号： C23C1634
CPC分类号： C23C16/56 , H01L21/28008 , H01L21/32053 , H01L21/3211 , H01L29/4908 , Y10T428/12576 , Y10T428/12583 , Y10T428/12674 , Y10T428/1284 , Y10T428/265
摘要： A method of treating structures (and the structure formed thereby), so as to prevent or retard the oxidation of a metal film, and/or prevent its delamination a substrate, includes providing a structure including a refractory metal film formed on a substrate, placing the structure into a vessel having a base pressure below approximately 10−7 torr, exposing the structure to a silane gas at a sufficiently high predetermined temperature and predetermined pressure to cause formation of a metal silicide layer on the refractory metal film, and exposing the structure to a second gas at a sufficiently high temperature and pressure to nitride the metal silicide layer into a nitrided layer.
摘要翻译： 一种处理结构（及其形成的结构）的方法，以防止或延缓金属膜的氧化和/或防止其基板的分层，包括提供包括在基板上形成的难熔金属膜的结构，将 将结构转换成基本压力低于约10 -7乇的容器，将结构暴露于足够高的预定温度和预定压力下的硅烷气体，以在难熔金属膜上形成金属硅化物层，并使结构暴露 以足够高的温度和压力将第二气体氮化成氮化层。
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9.发明授权Method for manufacturing device substrate with metal back-gate and structure formed thereby 有权制造具有金属背栅的器件衬底和由此形成的结构的方法公开(公告)号：US06797604B2
公开(公告)日：2004-09-28
申请号：US09817120
申请日：2001-03-27
IPC分类号： H01L214763
CPC分类号： H01L29/66772 , H01L21/76251 , H01L29/78648
摘要： A method (and resultant structure) of forming a semiconductor device, includes forming a metal-back-gate over a substrate and a metal back-gate, forming a passivation layer on the metal back-gate to prevent the metal back-gate from reacting with radical species, and providing an intermediate gluing layer between the substrate and the metal back-gate to enhance adhesion.
摘要翻译： 形成半导体器件的方法（和结果）包括在衬底和金属背栅上形成金属反向栅极，在金属背栅上形成钝化层，以防止金属背栅极反应 具有自由基物质，并且在基材和金属背栅之间提供中间胶合层以增强粘合性。
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公开(公告)号：US20110285021A1
公开(公告)日：2011-11-24
申请号：US13191090
申请日：2011-07-26
CPC分类号： H01L21/76826 , H01L21/76849 , H01L21/76883 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure that includes a dielectric material having a dielectric constant of about 3.0 or less is provided. This low k dielectric material has at least one conductive material having an upper surface embedded therein. The dielectric material also has a surface layer that is made hydrophobic prior to the formation of the noble metal cap. The noble metal cap is located directly on the upper surface of the at least one conductive material. Because of the presence of the hydrophobic surface layer on the dielectric material, the noble metal cap does not substantially extend onto the hydrophobic surface layer of the dielectric material that is adjacent to the at least one conductive material and no metal residues from the noble metal cap deposition form on this hydrophobic dielectric surface.
摘要翻译： 提供了包括具有约3.0或更小介电常数的介电材料的互连结构。 该低k电介质材料具有至少一个具有嵌入其中的上表面的导电材料。 电介质材料还具有在形成贵金属盖之前被制成疏水性的表面层。 贵金属盖直接位于至少一个导电材料的上表面上。 由于在电介质材料上存在疏水表面层，贵金属盖基本上不会延伸到与至少一种导电材料相邻的电介质材料的疏水表面层上，并且没有贵金属帽的金属残留物 沉积形式在该疏水电介质表面上。
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