公开(公告)号：US07384868B2

公开(公告)日：2008-06-10

申请号：US10662900

申请日：2003-09-15

申请人： Cyril Cabral, Jr. ,  Roy A. Carruthers ,  Jia Chen ,  Christophe Detavernier ,  James M. Harper ,  Christian Lavoie

发明人： Cyril Cabral, Jr. ,  Roy A. Carruthers ,  Jia Chen ,  Christophe Detavernier ,  James M. Harper ,  Christian Lavoie

IPC分类号： H01L21/44

CPC分类号： H01L21/28518

摘要： A method that solves the increased nucleation temperature that is exhibited during the formation of cobalt disilicides in the presence of Ge atoms is provided. The reduction in silicide formation temperature is achieved by first providing a structure including a Co layer including at least Ni, as an additive element, on top of a SiGe containing substrate. Next, the structure is subjected to a self-aligned silicide process which includes a first anneal, a selective etching step and a second anneal to form a solid solution of (Co, Ni) disilicide on the SiGe containing substrate. The Co layer including at least Ni can comprise an alloy layer of Co and Ni, a stack of Ni/Co or a stack of Co/Ni. A semiconductor structure including the solid solution of (Co, Ni) disilicide on the SiGe containing substrate is also provided.

摘要翻译： 提供了一种解决在锗原子存在下形成二硅化钴期间显示的增加的成核温度的方法。 硅化物形成温度的降低通过首先提供包括至少包含Ni的Co层作为添加元素在包含SiGe的衬底的顶部上的结构来实现。 接下来，对该结构进行自对准硅化物工艺，其包括第一退火，选择性蚀刻步骤和第二退火，以在含SiGe的衬底上形成（Co，Ni）二硅化物的固溶体。 至少包括Ni的Co层可以包括Co和Ni的合金层，Ni / Co的堆叠或Co / Ni的堆叠。 还提供了包含（Co，Ni）二硅化物在含SiGe的衬底上的固溶体的半导体结构。

公开(公告)号：US20080246120A1

公开(公告)日：2008-10-09

申请号：US12120854

申请日：2008-05-15

申请人： Cyril Cabral ,  Roy A. Carruthers ,  Jia Chen ,  Christophe Detavernier ,  James M. Harper ,  Christian Lavoie

发明人： Cyril Cabral ,  Roy A. Carruthers ,  Jia Chen ,  Christophe Detavernier ,  James M. Harper ,  Christian Lavoie

IPC分类号： H01L29/161

CPC分类号： H01L21/28518

摘要： A method that solves the increased nucleation temperature that is exhibited during the formation of cobalt disilicides in the presence of Ge atoms is provided. The reduction in silicide formation temperature is achieved by first providing a structure including a Co layer including at least Ni, as an additive element, on top of a SiGe containing substrate. Next, the structure is subjected to a self-aligned silicide process which includes a first anneal, a selective etching step and a second anneal to form a solid solution of (Co, Ni) disilicide on the SiGe containing substrate. The Co layer including at least Ni can comprise an alloy layer of Co and Ni, a stack of Ni/Co or a stack of Co/Ni. A semiconductor structure including the solid solution of (Co, Ni) disilicide on the SiGe containing substrate is also provided.

摘要翻译： 提供了一种解决在锗原子存在下形成二硅化钴期间显示的增加的成核温度的方法。 硅化物形成温度的降低通过首先提供包括至少包含Ni的Co层作为添加元素在包含SiGe的衬底的顶部上的结构来实现。 接下来，对该结构进行自对准硅化物工艺，其包括第一退火，选择性蚀刻步骤和第二退火，以在含SiGe的衬底上形成（Co，Ni）二硅化物的固溶体。 至少包括Ni的Co层可以包括Co和Ni的合金层，Ni / Co的堆叠或Co / Ni的堆叠。 还提供了包含（Co，Ni）二硅化物在含SiGe的衬底上的固溶体的半导体结构。

公开(公告)号：US07682968B2

公开(公告)日：2010-03-23

申请号：US12108001

申请日：2008-04-23

申请人： Cyril Cabral, Jr. ,  Roy A. Carruthers ,  Christophe Detavernier ,  Simon Gaudet ,  Christian Lavoie ,  Huiling Shang

发明人： Cyril Cabral, Jr. ,  Roy A. Carruthers ,  Christophe Detavernier ,  Simon Gaudet ,  Christian Lavoie ,  Huiling Shang

IPC分类号： H01L21/44

CPC分类号： H01L21/28525 ,  H01L21/28052 ,  H01L21/28518 ,  H01L29/665

摘要： A method for forming germano-silicide contacts atop a Ge-containing layer that is more resistant to etching than are conventional silicide contacts that are formed from a pure metal is provided. The method of the present invention includes first providing a structure which comprises a plurality of gate regions located atop a Ge-containing substrate having source/drain regions therein. After this step of the present invention, a Si-containing metal layer is formed atop the said Ge-containing substrate. In areas that are exposed, the Ge-containing substrate is in contact with the Si-containing metal layer. Annealing is then performed to form a germano-silicide compound in the regions in which the Si-containing metal layer and the Ge-containing substrate are in contact; and thereafter, any unreacted Si-containing metal layer is removed from the structure using a selective etch process. In some embodiments, an additional annealing step can follow the removal step. The method of the present invention provides a structure having a germano-silicide contact layer atop a Ge-containing substrate, wherein the germano-silicide contact layer contains more Si than the underlying Ge-containing substrate.

摘要翻译： 提供了一种形成锗硅化物的方法，该方法与由纯金属形成的常规硅化物接触相比更能抵抗蚀刻的含Ge层顶部接触。 本发明的方法包括首先提供一种结构，该结构包括位于其中具有源极/漏极区域的含Ge衬底顶部的多个栅极区域。 在本发明的该步骤之后，在所述含Ge基材上形成含Si金属层。 在暴露的区域中，含Ge衬底与含Si金属层接触。 然后进行退火以在含Si金属层和含Ge基板接触的区域中形成锗化硅化合物; 此后，使用选择性蚀刻工艺从结构中除去任何未反应的含Si金属层。 在一些实施方案中，附加的退火步骤可以跟随去除步骤。 本发明的方法提供了一种在含Ge衬底顶上具有锗硅化物接触层的结构，其中锗硅化物接触层含有比下面的含Ge衬底更多的Si。

公开(公告)号：US07271486B2

公开(公告)日：2007-09-18

申请号：US11075289

申请日：2005-03-08

申请人： Cyril Cabral, Jr. ,  Roy A. Carruthers ,  Christophe Detavernier ,  James M. E. Harper ,  Christian Lavoie

发明人： Cyril Cabral, Jr. ,  Roy A. Carruthers ,  Christophe Detavernier ,  James M. E. Harper ,  Christian Lavoie

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： C04B35/58 ,  C04B35/58085 ,  C04B2235/40 ,  C04B2235/404 ,  C04B2235/405 ,  C04B2235/408 ,  C23C26/00 ,  C23C30/00 ,  H01L21/28518 ,  H01L21/76889

摘要： A method for providing a low resistance non-agglomerated Ni monosilicide contact that is useful in semiconductor devices. Where the inventive method of fabricating a substantially non-agglomerated Ni alloy monosilicide comprises the steps of: forming a metal alloy layer over a portion of a Si-containing substrate, wherein said metal alloy layer comprises of Ni and one or multiple alloying additive(s), where said alloying additive is Ti, V, Ge, Cr, Zr, Nb, Mo, Hf, Ta, W, Re, Rh, Pd or Pt or mixtures thereof; annealing the metal alloy layer at a temperature to convert a portion of said metal alloy layer into a Ni alloy monosilicide layer; and removing remaining metal alloy layer not converted into Ni alloy monosilicide. The alloying additives are selected for phase stability and to retard agglomeration. The alloying additives most efficient in retarding agglomeration are most efficient in producing silicides with low sheet resistance.

摘要翻译： 一种用于提供半导体器件中有用的低电阻非聚集Ni单硅化物接触的方法。 在制造基本上非团聚的Ni合金一硅化硅的本发明方法中，包括以下步骤：在含Si衬底的一部分上形成金属合金层，其中所述金属合金层包括Ni和一种或多种合金添加剂 ），其中所述合金添加剂为Ti，V，Ge，Cr，Zr，Nb，Mo，Hf，Ta，W，Re，Rh，Pd或Pt或其混合物; 在将所述金属合金层的一部分转化为Ni合金一硅化物层的温度下退火金属合金层; 并且除去未转化为Ni合金一硅化物的剩余金属合金层。 选择合金添加剂用于相稳定性并阻止团聚。 延迟聚集中最有效的合金添加剂在生产低薄层电阻的硅化物中是最有效的。

公开(公告)号：US07449782B2

公开(公告)日：2008-11-11

申请号：US10838378

申请日：2004-05-04

申请人： Cyril Cabral, Jr. ,  Roy A. Carruthers ,  Christophe Detavernier ,  Simon Gaudet ,  Christian Lavoie ,  Huiling Shang

发明人： Cyril Cabral, Jr. ,  Roy A. Carruthers ,  Christophe Detavernier ,  Simon Gaudet ,  Christian Lavoie ,  Huiling Shang

IPC分类号： H01L29/40

CPC分类号： H01L21/28525 ,  H01L21/28052 ,  H01L21/28518 ,  H01L29/665

摘要： A method for forming germano-silicide contacts atop a Ge-containing layer that is more resistant to etching than are conventional silicide contacts that are formed from a pure metal is provided. The method of the present invention includes first providing a structure which comprises a plurality of gate regions located atop a Ge-containing substrate having source/drain regions therein. After this step of the present invention, a Si-containing metal layer is formed atop the said Ge-containing substrate. In areas that are exposed, the Ge-containing substrate is in contact with the Si-containing metal layer. Annealing is then performed to form a germano-silicide compound in the regions in which the Si-containing metal layer and the Ge-containing substrate are in contact; and thereafter, any unreacted Si-containing metal layer is removed from the structure using a selective etch process. In some embodiments, an additional annealing step can follow the removal step. The method of the present invention provides a structure having a germano-silicide contact layer atop a Ge-containing substrate, wherein the germano-silicide contact layer contains more Si than the underlying Ge-containing substrate.

摘要翻译： 提供了一种形成锗硅化物的方法，该方法与由纯金属形成的常规硅化物接触相比更能抵抗蚀刻的含Ge层顶部接触。 本发明的方法包括首先提供一种结构，该结构包括位于其中具有源极/漏极区域的含Ge衬底顶部的多个栅极区域。 在本发明的该步骤之后，在所述含Ge基材上形成含Si金属层。 在暴露的区域中，含Ge衬底与含Si金属层接触。 然后进行退火以在含Si金属层和含Ge基板接触的区域中形成锗化硅化合物; 此后，使用选择性蚀刻工艺从结构中除去任何未反应的含Si金属层。 在一些实施方案中，附加的退火步骤可以跟随去除步骤。 本发明的方法提供了一种在含Ge衬底顶上具有锗硅化物接触层的结构，其中锗硅化物接触层含有比下面的含Ge衬底更多的Si。

公开(公告)号：US06905560B2

公开(公告)日：2005-06-14

申请号：US10334464

申请日：2002-12-31

申请人： Cyril Cabral, Jr. ,  Roy A. Carruthers ,  Christophe Detavernier ,  James M. E. Harper ,  Christian Lavoie

发明人： Cyril Cabral, Jr. ,  Roy A. Carruthers ,  Christophe Detavernier ,  James M. E. Harper ,  Christian Lavoie

IPC分类号： C04B35/58 ,  C22F1/00 ,  C23C10/00 ,  H01L21/283 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/44 ,  H01L21/60 ,  H01L21/768

CPC分类号： C04B35/58 ,  C04B35/58085 ,  C04B2235/40 ,  C04B2235/404 ,  C04B2235/405 ,  C04B2235/408 ,  C23C26/00 ,  C23C30/00 ,  H01L21/28518 ,  H01L21/76889

摘要： A method for providing a low resistance non-agglomerated Ni monosilicide contact that is useful in semiconductor devices. Where the inventive method of fabricating a substantially non-agglomerated Ni alloy monosilicide comprises the steps of: forming a metal alloy layer over a portion of a Si-containing substrate, wherein said metal alloy layer comprises of Ni and one or multiple alloying additive(s), where said alloying additive is Ti, V, Ge, Cr, Zr, Nb, Mo, Hf, Ta, W, Re, Rh, Pd or Pt or mixtures thereof; annealing the metal alloy layer at a temperature to convert a portion of said metal alloy layer into a Ni alloy monosilicide layer; and removing remaining metal alloy layer not converted into Ni alloy monosilicide. The alloying additives are selected for phase stability and to retard agglomeration. The alloying additives most efficient in retarding agglomeration are most efficient in producing silicides with low sheet resistance.

公开(公告)号：US08154130B2

公开(公告)日：2012-04-10

申请号：US12107992

申请日：2008-04-23

申请人： Cyril Cabral, Jr. ,  Roy A. Carruthers ,  Christophe Detavernier ,  Simon Gaudet ,  Christian Lavoie ,  Huiling Shang

发明人： Cyril Cabral, Jr. ,  Roy A. Carruthers ,  Christophe Detavernier ,  Simon Gaudet ,  Christian Lavoie ,  Huiling Shang

IPC分类号： H01L29/40

CPC分类号： H01L21/28525 ,  H01L21/28052 ,  H01L21/28518 ,  H01L29/665

摘要： A method for forming germano-silicide contacts atop a Ge-containing layer that is more resistant to etching than are conventional silicide contacts that are formed from a pure metal is provided. The method of the present invention includes first providing a structure which comprises a plurality of gate regions located atop a Ge-containing substrate having source/drain regions therein. After this step of the present invention, a Si-containing metal layer is formed atop the said Ge-containing substrate. In areas that are exposed, the Ge-containing substrate is in contact with the Si-containing metal layer. Annealing is then performed to form a germano-silicide compound in the regions in which the Si-containing metal layer and the Ge-containing substrate are in contact; and thereafter, any unreacted Si-containing metal layer is removed from the structure using a selective etch process. In some embodiments, an additional annealing step can follow the removal step. The method of the present invention provides a structure having a germano-silicide contact layer atop a Ge-containing substrate, wherein the germano-silicide contact layer contains more Si than the underlying Ge-containing substrate.

摘要翻译： 提供了一种形成锗硅化物的方法，该方法与由纯金属形成的常规硅化物接触相比更能抵抗蚀刻的含Ge层顶部接触。 本发明的方法包括首先提供一种结构，该结构包括位于其中具有源极/漏极区域的含Ge衬底顶部的多个栅极区域。 在本发明的该步骤之后，在所述含Ge基材上形成含Si金属层。 在暴露的区域中，含Ge衬底与含Si金属层接触。 然后进行退火以在含Si金属层和含Ge基板接触的区域中形成锗化硅化合物; 此后，使用选择性蚀刻工艺从结构中除去任何未反应的含Si金属层。 在一些实施方案中，附加的退火步骤可以跟随去除步骤。 本发明的方法提供了一种在含Ge衬底顶上具有锗硅化物接触层的结构，其中锗硅化物接触层含有比下面的含Ge衬底更多的Si。

公开(公告)号：US07517795B2

公开(公告)日：2009-04-14

申请号：US11551647

申请日：2006-10-20

申请人： Roy A. Carruthers ,  Cedrik Y. Cole ,  Christophe Detavernier ,  Christian Lavoie ,  Kenneth P. Rodbell

发明人： Roy A. Carruthers ,  Cedrik Y. Cole ,  Christophe Detavernier ,  Christian Lavoie ,  Kenneth P. Rodbell

IPC分类号： H01L21/44

CPC分类号： H01L21/28052 ,  H01L21/28518 ,  H01L29/665

摘要： A method for forming a stabilized metal silicide film, e.g., contact (source/drain or gate), that does not substantially agglomerate during subsequent thermal treatments, is provided In the present invention, ions that are capable of attaching to defects within the Si-containing layer are implanted into the Si-containing layer prior to formation of metal silicide. The implanted ions stabilize the film, because the implants were found to substantially prevent agglomeration or at least delay agglomeration to much higher temperatures than in cases in which no implants were used.

摘要翻译： 在后续热处理中，形成稳定的金属硅化物膜例如接触（源极/漏极或栅极）的方法基本上不附着在本发明中，能够附着在Si- 在形成金属硅化物之前，将含硅层注入到含Si层中。 植入的离子稳定膜，因为发现植入物基本上防止结块或至少延迟聚集到比没有使用植入物的情况下更高的温度。

公开(公告)号：US07119012B2

公开(公告)日：2006-10-10

申请号：US10838377

申请日：2004-05-04

申请人： Roy A. Carruthers ,  Cedrik Y. Coia ,  Christophe Detavernier ,  Christian Lavoie ,  Kenneth P. Rodbell

发明人： Roy A. Carruthers ,  Cedrik Y. Coia ,  Christophe Detavernier ,  Christian Lavoie ,  Kenneth P. Rodbell

IPC分类号： H01L21/44

CPC分类号： H01L21/28052 ,  H01L21/28518 ,  H01L29/665

摘要： A method for forming a stabilized metal silicide film, e.g., contact (source/drain or gate), that does not substantially agglomerate during subsequent thermal treatments, is provided. In the present invention, ions that are capable of attaching to defects within the Si-containing layer are implanted into the Si-containing layer prior to formation of metal silicide. The implanted ions stabilize the film, because the implants were found to substantially prevent agglomeration or at least delay agglomeration to much higher temperatures than in cases in which no implants were used.

摘要翻译： 提供了一种用于形成稳定的金属硅化物膜的方法，例如接触（源极/漏极或栅极），其在随后的热处理期间基本上不附聚。 在本发明中，在形成金属硅化物之前，将能够附着到含Si层内的缺陷的离子注入到含Si层中。 植入的离子稳定膜，因为发现植入物基本上防止结块或至少延迟聚集到比没有使用植入物的情况下更高的温度。

公开(公告)号：US20080227283A1

公开(公告)日：2008-09-18

申请号：US12108001

申请日：2008-04-23

申请人： Cyril Cabral ,  Roy A. Carruthers ,  Christophe Detavernier ,  Simon Gaudet ,  Christian Lavoie ,  Huiling Shang

发明人： Cyril Cabral ,  Roy A. Carruthers ,  Christophe Detavernier ,  Simon Gaudet ,  Christian Lavoie ,  Huiling Shang

IPC分类号： H01L21/28

CPC分类号： H01L21/28525 ,  H01L21/28052 ,  H01L21/28518 ,  H01L29/665

摘要： A method for forming gennano-silicide contacts atop a Ge-containing layer that is more resistant to etching than are conventional silicide contacts that are formed from a pure metal is provided. The method of the present invention includes first providing a structure which comprises a plurality of gate regions located atop a Ge-containing substrate having source/drain regions therein. After this step of the present invention, a Si-containing metal layer is formed atop the said Ge-containing substrate. In areas that are exposed, the Ge-containing substrate is in contact with the Si-containing metal layer. Annealing is then performed to form a germano-silicide compound in the regions in which the Si-containing metal layer and the Ge-containing substrate are in contact; and thereafter, any unreacted Si-containing metal layer is removed from the structure using a selective etch process. In some embodiments, an additional annealing step can follow the removal step. The method of the present invention provides a structure having a germano-silicide contact layer atop a Ge-containing substrate, wherein the germano-silicide contact layer contains more Si than the underlying Ge-containing substrate.

摘要翻译： 提供了一种在与由纯金属形成的常规硅化物接触相比更耐蚀刻性的Ge含有层上方形成硅锗化物的方法。 本发明的方法包括首先提供一种结构，该结构包括位于其中具有源极/漏极区域的含Ge衬底顶部的多个栅极区域。 在本发明的该步骤之后，在所述含Ge基材上形成含Si金属层。 在暴露的区域中，含Ge衬底与含Si金属层接触。 然后进行退火以在含Si金属层和含Ge基板接触的区域中形成锗化硅化合物; 此后，使用选择性蚀刻工艺从结构中除去任何未反应的含Si金属层。 在一些实施方案中，附加的退火步骤可以跟随去除步骤。 本发明的方法提供了一种在含Ge衬底顶上具有锗硅化物接触层的结构，其中锗硅化物接触层含有比下面的含Ge衬底更多的Si。