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    Method of processing wafer
    2.
    发明授权
    Method of processing wafer 有权

    公开(公告)号：US10811458B2

    公开(公告)日：2020-10-20

    申请号：US16151903

    申请日：2018-10-04

    Applicant: DISCO CORPORATION

    Inventor： Ryugo Oba ,  Yukinobu Ohura ,  Hideyuki Sandoh

    IPC: H01L27/146 ,  H01L21/78 ,  H01L21/683 ,  H01L23/544 ,  H01L21/308 ,  H01L21/3065 ,  H01L21/67

    Abstract: A method of processing a wafer having devices disposed in respective regions demarcated on a front face thereof by a grid of a plurality of projected dicing lines on the front face, the method includes a mask layer forming step of covering the front face of the wafer except for the regions where grooves are to be formed along the projected dicing lines with a resin material mixed with an ultraviolet ray absorber, and forming a mask layer on the front face of the wafer, a plasma etching step of performing plasma etching on the wafer from the mask layer side using a fluorine-based stable gas as an etching gas, and forming grooves in the wafer along the projected dicing lines, and a mask layer removing step of removing the mask layer after the plasma etching step is performed.

    Optical device wafer processing method
    3.
    发明授权
    Optical device wafer processing method 有权

    公开(公告)号：US10109527B2

    公开(公告)日：2018-10-23

    申请号：US15281404

    申请日：2016-09-30

    Applicant: DISCO CORPORATION

    Inventor： Ryugo Oba ,  Takumi Shotokuji ,  Naotoshi Kirihara

    IPC: H01L21/78 ,  H01L21/268 ,  H01L21/683 ,  H01L21/67 ,  H01L33/00 ,  H01S5/00 ,  B23K26/00 ,  B23K26/40

    Abstract: An optical device wafer processing method includes a shield tunnel forming step of applying a pulsed laser beam having a transmission wavelength to a sapphire substrate along an area corresponding to each division line from the back side of the sapphire substrate in the condition where the focal point of the pulsed laser beam is set inside the sapphire substrate, thereby forming a plurality of shield tunnels arranged along the area corresponding to each division line, each shield tunnel being composed of a fine hole and an amorphous region formed around the fine hole for shielding the fine hole. The optical device wafer processing method further includes a dividing step of applying an external force to the optical device wafer after performing a light emitting layer forming step, thereby dividing the optical device wafer along the division lines to obtain the individual optical device chips.

    LASER PROCESSING APPARATUS
    5.
    发明申请
    LASER PROCESSING APPARATUS 有权
    激光加工设备

    公开(公告)号：US20160151857A1

    公开(公告)日：2016-06-02

    申请号：US14953640

    申请日：2015-11-30

    Applicant: DISCO CORPORATION

    Inventor： Wataru Odagiri ,  Kouichi Nehashi ,  Joel Koerwer ,  Hironari Ohkubo ,  Shuichiro Tsukiji ,  Ryugo Oba ,  Kentaro Odanaka ,  Takashi Sampei

    IPC: B23K26/06 ,  H01L21/78 ,  B23K26/082 ,  H01L21/687 ,  B23K26/035 ,  B23K26/04

    CPC classification number: B23K26/0626 ,  B23K26/032 ,  B23K26/035 ,  B23K26/04 ,  B23K26/0622 ,  B23K26/082 ,  B23K26/0853 ,  B23K26/359 ,  B23K2101/40 ,  H01L21/67092 ,  H01L21/78

    Abstract: A laser beam irradiation unit of a laser processing apparatus includes a pulse laser oscillator, a condenser which converges and irradiates a pulse laser beam upon a workpiece held on a chuck table, a dichroic mirror disposed between the pulse laser oscillator and the condenser, a strobo flash irradiation unit which irradiates light on a route of the dichroic mirror and the condenser, a beam splitter disposed between the strobo flash irradiation unit and the dichroic mirror, and an image pickup unit disposed on the route of the light split by the beam splitter. A control unit renders the strobo flash irradiation unit and the image pickup unit operative in a timed relationship with the pulse laser beam oscillated from the pulse laser beam oscillator and irradiated upon the workpiece and detects a processed state on the basis of an image signal from the image pickup unit.

    Abstract translation: 激光加工装置的激光束照射单元包括脉冲激光振荡器，将夹持在夹盘上的工件上的脉冲激光束会聚并照射的冷凝器，设置在脉冲激光振荡器和冷凝器之间的分色镜， 闪光照射单元，其在分色镜和聚光器的路线上照射光，设置在闪光灯照射单元和分色镜之间的分束器和设置在由分束器分开的光的路线上的图像拾取单元。 控制单元使闪光灯照射单元和图像拾取单元以与从脉冲激光束振荡器振荡的脉冲激光束定时关系起作用并照射到工件上，并且基于来自所述脉冲激光束振荡器的图像信号检测处理状态 摄像单元

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