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    METHOD OF PRODUCING TWO OR MORE THIN-FILM-BASED INTERCONNECTED PHOTOVOLTAIC CELLS
    2.
    发明申请
    METHOD OF PRODUCING TWO OR MORE THIN-FILM-BASED INTERCONNECTED PHOTOVOLTAIC CELLS 审中-公开
    生产两个或更多薄膜的互连光伏电池的方法

    公开(公告)号：US20140360554A1

    公开(公告)日：2014-12-11

    申请号：US14366160

    申请日：2012-12-11

    Applicant: Dow Global Technologies LLC

    Inventor： Rebekah K. Feist ,  Michael E. Mills

    IPC: H01L25/04

    CPC classification number: H01L31/043 ,  H01L31/0463 ,  H01L2924/0002 ,  Y02E10/50 ,  H01L2924/00

    Abstract: The present invention is premised upon a method of producing two or more thin-film-based interconnected photovoltaic cells comprising the steps of: a) providing a photovoltaic article comprising: a flexible conductive substrate, at least on photo-electrically active layer, a top transparent conducting layer, and a carrier structure disposed above the tap transparent layer; b) forming one or more first channels through the layers of the photovoltaic article; c) applying an insulating layer to the conductive substrate and spanning the one or more first channel; d) removing the carrier structure; e) forming an addition to the one or more first channels through the insulating layer; f) forming one or more second channels off set from the one or mom first channels through the insulating layer to expose a conductive surface of the flexible conductive substrate; g) applying a first electrically conductive material to the conductive surface of the flexible conductive substrate via the one or more; second channels; h) applying an electrically conductive film to the first insulating layer, wherein the film is hi electrical communication with the flexible conductive substrate via the first electrically conductive material; J) applying a second electrically conductive material above the top transparent conducting layer and through the one or more first channels, electrically connecting the layers of the photovoltaic article from step b to the electrically conductive

    Abstract translation: 本发明的前提是制备两个或多个基于薄膜的互连光伏电池的方法，包括以下步骤：a）提供光伏制品，其包括：柔性导电基材，至少在光电活性层上，顶部 透明导电层和布置在丝锥透明层之上的载体结构; b）通过光伏制品的层形成一个或多个第一通道; c）将绝缘层施加到所述导电衬底并横跨所述一个或多个第一通道; d）移除载体结构; e）通过所述绝缘层形成对所述一个或多个第一通道的添加; f）形成从所述一个或多个第一通道穿过所述绝缘层设置的一个或多个第二通道，以暴露所述柔性导电基板的导电表面; g）经由所述一个或多个将第一导电材料施加到所述柔性导电基板的导电表面; 第二渠道; h）将导电膜施加到所述第一绝缘层，其中所述膜通过所述第一导电材料与所述柔性导电基板高度电连通; J）在顶部透明导电层上方施加第二导电材料并且通过一个或多个第一通道，将光伏制品的层与步骤b电连接到导电

    METHOD OF MAKING PHOTOVOLTAIC DEVICES WITH REDUCED CONDUCTION BAND OFFSET BETWEEN PNICTIDE ABSORBER FILMS AND EMITTER FILMS
    3.
    发明申请
    METHOD OF MAKING PHOTOVOLTAIC DEVICES WITH REDUCED CONDUCTION BAND OFFSET BETWEEN PNICTIDE ABSORBER FILMS AND EMITTER FILMS 审中-公开
    PNICTIDE吸收膜和发射体膜之间具有减少导电带偏移的光伏器件的制造方法

    公开(公告)号：US20160071994A1

    公开(公告)日：2016-03-10

    申请号：US14373599

    申请日：2013-01-30

    Applicant: DOW GLOBAL TECHNOLOGIES LLC ,  CALIFORNIA INSTITUTE OF TECHNOLOGY

    Inventor： Jeffrey P. Bosco ,  Gregory M. Kimball ,  Harry A. Atwater ,  Nathan S. Lewis ,  Rebekah K. Feist ,  Marty W. DeGroot

    IPC: H01L31/072 ,  H01L31/18

    CPC classification number: H01L31/072 ,  H01L31/022466 ,  H01L31/032 ,  H01L31/18 ,  Y02E10/50

    Abstract: The principles of the present invention are used to reduce the conduction band offset between chalcogenide emitter and pnictide absorber films. Alternatively stated, the present invention provides strategies to more closely match the electron affinity characteristics between the absorber and emitter components. The resultant photovoltaic devices have the potential to have higher efficiency and higher open circuit voltage. The resistance of the resultant junctions would be lower with reduced current leakage. In illustrative modes of practice, the present invention incorporates one or more tuning agents into the emitter layer in order to adjust the electron affinity characteristics, thereby reducing the conduction band offset between the emitter and the absorber. In the case of an n-type emitter such as ZnS or a tertiary compound such as zinc sulfide selenide (optionally doped with Al) or the like, an exemplary tuning agent is Mg when the absorber is a p-type pnictide material such as zinc phosphide or an alloy of zinc phosphide incorporating at least one additional metal in addition to Zn and optionally at least one non-metal in addition to phosphorus. Consequently, photovolotaic devices incorporating such films would demonstrate improved electronic performance.

    Abstract translation: 本发明的原理用于降低硫族化物发射体和pnictide吸收膜之间的导带偏移。 或者说，本发明提供了更紧密匹配吸收体和发射体组分之间的电子亲和特性的策略。 所得到的光伏器件具有更高的效率和更高的开路电压的潜力。 所得结的电阻随着电流泄漏减小而降低。 在说明性实践中，本发明将一个或多个调谐剂并入发射极层，以便调节电子亲和特性，从而降低发射极和吸收体之间的导带偏移。 在诸如ZnS的n型发射体或诸如硫化锌硒化物（任选地掺杂有Al）等的叔化合物的情况下，当吸收剂是诸如锌的p型pnictide材料时，示例性调谐剂是Mg 磷化物或除了除了磷以外还含有至少一种另外的金属以及任选的至少一种非金属的磷化锌的合金。 因此，结合这样的薄膜的光电设备将显示出改进的电子性能。

    SPECTRAL LIGHT SPLITTING MODULE AND PHOTOVOLTAIC SYSTEM
    6.
    发明申请
    SPECTRAL LIGHT SPLITTING MODULE AND PHOTOVOLTAIC SYSTEM 审中-公开
    光谱分光模块和光伏系统

    公开(公告)号：US20170012157A1

    公开(公告)日：2017-01-12

    申请号：US15107315

    申请日：2014-12-22

    Applicant: DOW GLOBAL TECHNOLOGIES LLC ,  CALIFORNIAINSTITUTE OF TECHNOLOGY

    Inventor： Carissa Eisler ,  Weijun Zhou ,  Emily D. Kosten ,  Emily C. Warmann ,  Carrie E. Hofmann ,  Harry A. Atwater ,  Rebekah K. Feist ,  James C. Stevens

    IPC: H01L31/054 ,  H01L31/05

    CPC classification number: H01L31/0547 ,  H01L31/0504 ,  H01L31/0543 ,  H01L31/0549 ,  Y02E10/52

    Abstract: A light splitting optical module that converts incident light into electrical energy, the module including a solid optical element comprising an input end for receiving light, a first side, and a second side spaced from the first side, a first solar cell adjacent to the first side of the solid optical element, and a second solar cell adjacent to the second side of the solid optical element. The first solar cell is positioned to absorb a first subset of incident light and reflect a first remainder of the incident light to the second solar cell through the solid optical element, wherein the first solar cell has a lower band gap than the second cell.

    Abstract translation: 一种将入射光转换成电能的分光光学模块，该模块包括一个固体光学元件，该固体光学元件包括一个用于接收光的输入端，一个第一侧和与该第一侧隔开的第二侧，与第一个相邻的第一个太阳能电池 固体光学元件的一侧，以及与固体光学元件的第二侧相邻的第二太阳能电池。 第一太阳能电池被定位成吸收入射光的第一子集，并且通过固体光学元件将入射光的第一剩余部分反射到第二太阳能电池，其中第一太阳能电池具有比第二电池低的带隙。

    BI-COMPONENT ELECTRICAL CONNECTOR
    7.
    发明申请
    BI-COMPONENT ELECTRICAL CONNECTOR 审中-公开
    双组分电气连接器

    公开(公告)号：US20150325731A1

    公开(公告)日：2015-11-12

    申请号：US14410347

    申请日：2013-08-09

    Applicant: DOW GLOBAL TECHNOLOGIES LLC

    Inventor： Abhijit A. Namjoshi ,  Rebekah K. Feist ,  Leonardo C. Lopez ,  Michael E. Mills ,  Lindsey A. Clark ,  Kevin P. Capaldo

    IPC: H01L31/05

    CPC classification number: H01L31/0516 ,  H01L31/0512 ,  Y02E10/50

    Abstract: The invention relates to a photovoltaic article comprising a plurality of photovoltaic cells having first (22) and second (24) electrical connector segments in contact with the top side (18) of a first cell (10) and the backside (16) of a second adjacent cell (12). The materials used to form the electrical connector segments are selected to minimize corrosion, maximize contact area, and lower contact resistance over the lifetime of the article.

    Abstract translation: 本发明涉及一种光伏制品，其包括具有与第一电池（10）的顶侧（18）接触的第一（22）和第二（24）电连接器部分的多个光伏电池，以及一个 第二相邻单元（12）。 用于形成电连接器段的材料被选择以在制品的使用寿命期间最小化腐蚀，最大化接触面积和降低的接触电阻。

    Method of making photovoltaic devices incorporating improved pnictide semiconductor films
    10.
    发明授权
    Method of making photovoltaic devices incorporating improved pnictide semiconductor films 有权
    制造具有改进的pnictide半导体膜的光伏器件的方法

    公开(公告)号：US09287435B2

    公开(公告)日：2016-03-15

    申请号：US14373598

    申请日：2013-01-30

    Applicant: DOW GLOBAL TECHNOLOGIES LLC ,  CALIFORNIA INSTITUTE OF TECHNOLOGY

    Inventor： Gregory M. Kimball ,  Harry A. Atwater ,  Nathan S. Lewis ,  Jeffrey P. Bosco ,  Rebekah K. Feist

    IPC: H01L31/00 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/032 ,  H01L31/075 ,  H01L31/20 ,  H01L21/00

    CPC classification number: H01L31/18 ,  H01L31/022466 ,  H01L31/032 ,  H01L31/075 ,  H01L31/20 ,  Y02E10/548

    Abstract: The present invention uses a treatment that involves an etching treatment that forms a pnictogen-rich region on the surface of a pnictide semiconductor film The region is very thin in many modes of practice, often being on the order of only 2 to 3 nm thick in many embodiments. Previous investigators have left the region in place without appreciating the fact of its presence and/or that its presence, if known, can compromise electronic performance of resultant devices. The present invention appreciates that the formation and removal of the region advantageously renders the pnictide film surface highly smooth with reduced electronic defects. The surface is well-prepared for further device fabrication.

    Abstract translation: 本发明使用涉及在pnictide半导体膜的表面上形成富含富含富含亚硝酸盐区域的蚀刻处理的处理。在许多实践模式中，该区域非常薄，通常在2至3nm厚的数量级 许多实施例。 以前的调查人员已经离开了该地区，而不理解其存在的事实和/或其存在（如果知道）可能会损害所得设备的电子性能。 本发明认识到，区域的形成和去除有利地使得pnictide膜表面在电子缺陷减少的情况下非常平滑。 表面准备好进一步的器件制造。

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