公开(公告)号：US20090258454A1

公开(公告)日：2009-10-15

申请号：US12490891

申请日：2009-06-24

申请人： Dae Yeon KIM ,  Sung Min Hwang ,  Jin Bock Lee ,  Sang Ho Yoon

发明人： Dae Yeon KIM ,  Sung Min Hwang ,  Jin Bock Lee ,  Sang Ho Yoon

IPC分类号： H01L21/20 ,  H01L33/00

CPC分类号： H01L33/22 ,  H01L33/44

摘要： An n-type GaN layer is formed on a substrate, and an active layer is formed on the n-type GaN layer. A p-type GaN layer is formed on the active layer, and portions of the p-type GaN layer and the active layer are mesa-etched so as to expose a portion of the n-type GaN layer. An irregularities forming layer is formed on the p-type GaN layer and a photosensitive film pattern for forming a surface irregularities pattern is formed on the irregularities forming layer. The irregularities forming layer is selectively wet-etched by using the photosensitive film pattern as an etching mask, thereby forming surface irregularities. A p-electrode is formed on the p-type GaN layer having the surface irregularities formed thereon, and an n-electrode is formed on the exposed n-type GaN layer.”

摘要翻译： 在衬底上形成n型GaN层，在n型GaN层上形成有源层。 在有源层上形成p型GaN层，并且对p型GaN层和有源层的部分进行台面蚀刻，以暴露n型GaN层的一部分。 在p型GaN层上形成凹凸形成层，在凹凸形成层上形成用于形成表面凹凸图案的感光膜图案。 通过使用感光膜图案作为蚀刻掩模来选择性地湿法蚀刻不规则形成层，从而形成表面不规则。 在其上形成有表面凹凸的p型GaN层上形成p电极，在暴露的n型GaN层上形成n电极。

公开(公告)号：US20070184568A1

公开(公告)日：2007-08-09

申请号：US11646406

申请日：2006-12-28

申请人： Dae Yeon Kim ,  Sung Min Hwang ,  Jin Bock Lee ,  Sang Ho Yoon

发明人： Dae Yeon Kim ,  Sung Min Hwang ,  Jin Bock Lee ,  Sang Ho Yoon

IPC分类号： H01L21/00

CPC分类号： H01L33/22 ,  H01L33/44

摘要： Provided a method of manufacturing a GaN-based LED comprising forming an n-type GaN layer on a substrate; forming an active layer on the n-type GaN layer; forming a p-type GaN layer on the active layer; mesa-etching portions of the p-type GaN layer and the active layer so as to expose a portion of the n-type GaN layer; forming an irregularities forming layer on the p-type GaN layer; forming a photosensitive film pattern for forming a surface irregularities pattern on the irregularities forming layer; selectively wet-etching the irregularities forming layer by using the photosensitive film pattern as an etching mask, thereby forming surface irregularities; forming a p-electrode on the p-type GaN layer having the surface irregularities formed thereon; and forming an n-electrode on the exposed n-type GaN layer.

摘要翻译： 提供一种制造GaN基LED的方法，包括在衬底上形成n型GaN层; 在n型GaN层上形成有源层; 在有源层上形成p型GaN层; 蚀刻p型GaN层和有源层的部分，以暴露n型GaN层的一部分; 在p型GaN层上形成凹凸形成层; 形成用于在所述凹凸形成层上形成表面凹凸图案的感光膜图案; 通过使用感光膜图案作为蚀刻掩模来选择性地湿法蚀刻不规则形成层，从而形成表面不规则; 在其上形成有表面凹凸的p型GaN层上形成p电极; 以及在暴露的n型GaN层上形成n电极。

公开(公告)号：US07964877B2

公开(公告)日：2011-06-21

申请号：US11822186

申请日：2007-07-03

申请人： Sang Ho Yoon ,  Su Yeol Lee ,  Dae Yeon Kim

发明人： Sang Ho Yoon ,  Su Yeol Lee ,  Dae Yeon Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/10 ,  G02F1/13362 ,  H01L33/08 ,  H01L33/20

摘要： A polarized semiconductor light emitting device includes a semiconductor structure having a first conductivity semiconductor layer, an active layer and a second conductivity semiconductor layer sequentially stacked. Also, the semiconductor structure further includes a plurality of light guide parts defined by a plurality of grooves arranged along a predetermined direction. The grooves extend from the second conductivity semiconductor layer with a depth reaching at least the active layer, and the light guide parts have a length greater than a width thereof to selectively emit a polarized component in a length direction thereof.

摘要翻译： 偏振半导体发光器件包括具有依次堆叠的第一导电半导体层，有源层和第二导电半导体层的半导体结构。 此外，半导体结构还包括由沿着预定方向布置的多个槽限定的多个导光部。 凹槽从第二导电半导体层延伸到至少达到有源层的深度，并且导光部分的长度大于其宽度，以在其长度方向上选择性地发射偏振分量。

公开(公告)号：US20080012028A1

公开(公告)日：2008-01-17

申请号：US11822186

申请日：2007-07-03

申请人： Sang Ho Yoon ,  Su Yeol Lee ,  Dae Yeon Kim

发明人： Sang Ho Yoon ,  Su Yeol Lee ,  Dae Yeon Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/10 ,  G02F1/13362 ,  H01L33/08 ,  H01L33/20

摘要： A polarized semiconductor light emitting device includes a semiconductor structure having a first conductivity semiconductor layer, an active layer and a second conductivity semiconductor layer sequentially stacked. Also, the semiconductor structure further includes a plurality of light guide parts defined by a plurality of grooves arranged along a predetermined direction. The grooves extend from the second conductivity semiconductor layer with a depth reaching at least the active layer, and the light guide parts have a length greater than a width thereof to selectively emit a polarized component in a length direction thereof.

摘要翻译： 偏振半导体发光器件包括具有依次堆叠的第一导电半导体层，有源层和第二导电半导体层的半导体结构。 此外，半导体结构还包括由沿着预定方向布置的多个槽限定的多个导光部。 凹槽从第二导电半导体层延伸到至少达到有源层的深度，并且导光部分的长度大于其宽度，以在其长度方向上选择性地发射偏振分量。

公开(公告)号：US20120056150A1

公开(公告)日：2012-03-08

申请号：US13292774

申请日：2011-11-09

申请人： Jin Bock LEE ,  Dong Woohn Kim ,  Sang Ho Yoon ,  Pun Jae Choi

发明人： Jin Bock LEE ,  Dong Woohn Kim ,  Sang Ho Yoon ,  Pun Jae Choi

IPC分类号： H01L33/04

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/32

摘要： A nitride semiconductor light-emitting device with an electron pattern that applies current uniformly to an active layer to improve light emission efficiency is provided. The nitride semiconductor light-emitting device includes multiple layers of a substrate, an n-type nitride layer, an active layer of a multi-quantum-well structure, and a p-type nitride layer. The nitride semiconductor light-emitting device further includes a p-electrode pattern and an n-electrode pattern. The p-electrode pattern includes one or more p-pads disposed on the p-type nitride layer, and one or more p-fingers extending from the p-pads. The n-electrode pattern includes one or more n-pads disposed on an exposed region of the n-type nitride layer to correspond to the p-pads, and one or more n-fingers extending from the n-pads. The n-fingers have identical resistance, and the p-fingers have identical resistance to improve current spreading to the active layer.

摘要翻译： 提供了具有均匀地向有源层施加电流以提高发光效率的电子图案的氮化物半导体发光器件。 氮化物半导体发光器件包括多层衬底，n型氮化物层，多量子阱结构的有源层和p型氮化物层。 氮化物半导体发光器件还包括p电极图案和n电极图案。 p电极图案包括设置在p型氮化物层上的一个或多个p焊盘以及从p焊盘延伸的一个或多个p指。 n电极图案包括设置在n型氮化物层的暴露区域上以对应于p焊盘的一个或多个n焊盘以及从n焊盘延伸的一个或多个n指。 n指具有相同的电阻，并且p指具有相同的电阻以改善向有源层的电流扩展。

公开(公告)号：US20090159909A1

公开(公告)日：2009-06-25

申请号：US12252660

申请日：2008-10-16

申请人： Jin Bock LEE ,  Dong Woohn Kim ,  Sang Ho Yoon ,  Pun Jae Choi

发明人： Jin Bock LEE ,  Dong Woohn Kim ,  Sang Ho Yoon ,  Pun Jae Choi

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/32

摘要： A nitride semiconductor light-emitting device with an electron pattern that applies current uniformly to an active layer to improve light emission efficiency is provided. The nitride semiconductor light-emitting device includes multiple layers of a substrate, an n-type nitride layer, an active layer of a multi-quantum-well structure, and a p-type nitride layer. The nitride semiconductor light-emitting device further includes a p-electrode pattern and an n-electrode pattern. The p-electrode pattern includes one or more p-pads disposed on the p-type nitride layer, and one or more p-fingers extending from the p-pads. The n-electrode pattern includes one or more n-pads disposed on an exposed region of the n-type nitride layer to correspond to the p-pads, and one or more n-fingers extending from the n-pads. The n-fingers have identical resistance, and the p-fingers have identical resistance to improve current spreading to the active layer.

摘要翻译： 提供了具有均匀地向有源层施加电流以提高发光效率的电子图案的氮化物半导体发光器件。 氮化物半导体发光器件包括多层衬底，n型氮化物层，多量子阱结构的有源层和p型氮化物层。 氮化物半导体发光器件还包括p电极图案和n电极图案。 p电极图案包括设置在p型氮化物层上的一个或多个p焊盘以及从p焊盘延伸的一个或多个p指。 n电极图案包括设置在n型氮化物层的暴露区域上以对应于p焊盘的一个或多个n焊盘以及从n焊盘延伸的一个或多个n指。 n指具有相同的电阻，并且p指具有相同的电阻以改善向有源层的电流扩展。

公开(公告)号：US08632225B2

公开(公告)日：2014-01-21

申请号：US13181998

申请日：2011-07-13

申请人： Won Hoe Koo ,  Sang Ho Yoon ,  Hyun Jung Kim ,  Ki Un Lee ,  Hyung Jin Kim ,  Kyeong Ik Min

发明人： Won Hoe Koo ,  Sang Ho Yoon ,  Hyun Jung Kim ,  Ki Un Lee ,  Hyung Jin Kim ,  Kyeong Ik Min

IPC分类号： F21V7/00 ,  F21V3/00 ,  F21V5/00

CPC分类号： F21V5/00 ,  F21V5/04 ,  F21V5/08 ,  F21W2131/103 ,  F21Y2115/10 ,  G02B3/08 ,  G02B19/0028 ,  G02B19/0061

摘要： An optical lens includes: a lens body having an outer surface extending in a longitudinal direction (a first direction) and formed to be symmetrical in a lateral direction (a second direction); and a cavity formed at a lower portion of the lens body and having inner side faces asymmetrical in the longitudinal direction.

摘要翻译： 光学透镜包括：透镜体，其具有在纵向（第一方向）上延伸并且形成为沿横向（第二方向）对称的外表面; 以及形成在透镜体的下部并且具有在纵向方向上不对称的内侧面的空腔。

公开(公告)号：US08168454B2

公开(公告)日：2012-05-01

申请号：US12466086

申请日：2009-05-14

申请人： Su Yeol Lee ,  Sang Ho Yoon ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

发明人： Su Yeol Lee ,  Sang Ho Yoon ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

IPC分类号： H01L21/00

CPC分类号： H01L33/32 ,  H01L33/14 ,  H01L33/40

摘要： Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga+N layer containing a larger amount of Ga than that of N; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.

摘要翻译： 提供包括n电极的垂直LED; 形成在n电极下面的n型GaN层，n型GaN层具有与n电极接触的表面，该表面具有比N大的Ga的Ga + N层; 形成在n型GaN层下面的有源层; 形成在有源层下面的p型GaN层; 形成在p型GaN层下面的p电极; 以及在p电极下面形成的结构支撑层。

公开(公告)号：US20120057354A1

公开(公告)日：2012-03-08

申请号：US13226000

申请日：2011-09-06

申请人： Chang Mo LEE ,  Sang Ho Yoon ,  Hyung Jin Kim ,  Kyeong Ik Min ,  Dong Yeoul Lee ,  Ki Un Lee

发明人： Chang Mo LEE ,  Sang Ho Yoon ,  Hyung Jin Kim ,  Kyeong Ik Min ,  Dong Yeoul Lee ,  Ki Un Lee

IPC分类号： F21V5/04

CPC分类号： G02B3/08 ,  F21V5/04 ,  F21W2131/103 ,  F21Y2115/10 ,  G02B19/0028 ,  G02B19/0066

摘要： There are provided an optical lens and a light source module, and a street lamp having the same. The optical lens includes a concave dome shaped inner surface formed to have a similarly-oval shaped lower surface, and formed to include a plurality of light incident surfaces formed to be stepped along the inner surface thereof and stepped surfaces connecting the plurality of light incident surfaces to one another; and an outer surface formed to surround the inner surface.

摘要翻译： 提供了一种光学透镜和光源模块，以及具有该光学透镜和光源模块的路灯。 光学透镜包括形成为具有类似椭圆形的下表面的凹形圆顶形内表面，并且形成为包括沿其内表面形成为台阶状的多个光入射表面，并且将多个光入射表面 彼此; 以及形成为围绕内表面的外表面。

公开(公告)号：US20080012030A1

公开(公告)日：2008-01-17

申请号：US11819785

申请日：2007-06-29

申请人： Sang Ho Yoon ,  Kyeong Ik Min

发明人： Sang Ho Yoon ,  Kyeong Ik Min

IPC分类号： H01L33/00

CPC分类号： H01L33/24

摘要： A nitride semiconductor light emitting device array, which includes a dielectric layer formed on a first conductivity lower nitride semiconductor layer, having a plurality of windows. Each of a plurality of hexagonal pyramid light emission structures is grown from a surface of the first conductivity lower nitride semiconductor layer exposed through each of the windows and onto a peripheral area of the window of the dielectric layer. Each of the hexagonal pyramid light emission structures includes a first conductivity upper nitride semiconductor layer, an active layer and a second conductivity nitride semiconductor layer formed in their order. The windows are disposed in such a triangular arrangement that side surfaces of the adjacent hexagonal pyramid light emission structures face each other. Also, a distance between bases of the adjacent hexagonal pyramid light emission structures is less than 0.3 times an interval between centers of the windows of the adjacent hexagonal pyramid light emission structures.

摘要翻译： 一种氮化物半导体发光器件阵列，其包括形成在第一导电性低氮化物半导体层上的介电层，具有多个窗口。 多个六边形金字塔发光结构中的每一个从通过每个窗户露出的第一导电性下氮化物半导体层的表面生长到介电层的窗口的外围区域上。 六角锥形发光结构中的每一个包括依次形成的第一导电性上氮化物半导体层，有源层和第二导电氮化物半导体层。 窗口设置成三角形布置，使得相邻的六角锥形发光结构的侧表面彼此面对。 此外，相邻的六角锥形发光结构的基底之间的距离小于相邻六边形金字塔发光结构的窗口的中心之间的间隔的0.3倍。