公开(公告)号：US20090258454A1

公开(公告)日：2009-10-15

申请号：US12490891

申请日：2009-06-24

申请人： Dae Yeon KIM ,  Sung Min Hwang ,  Jin Bock Lee ,  Sang Ho Yoon

发明人： Dae Yeon KIM ,  Sung Min Hwang ,  Jin Bock Lee ,  Sang Ho Yoon

IPC分类号： H01L21/20 ,  H01L33/00

CPC分类号： H01L33/22 ,  H01L33/44

摘要： An n-type GaN layer is formed on a substrate, and an active layer is formed on the n-type GaN layer. A p-type GaN layer is formed on the active layer, and portions of the p-type GaN layer and the active layer are mesa-etched so as to expose a portion of the n-type GaN layer. An irregularities forming layer is formed on the p-type GaN layer and a photosensitive film pattern for forming a surface irregularities pattern is formed on the irregularities forming layer. The irregularities forming layer is selectively wet-etched by using the photosensitive film pattern as an etching mask, thereby forming surface irregularities. A p-electrode is formed on the p-type GaN layer having the surface irregularities formed thereon, and an n-electrode is formed on the exposed n-type GaN layer.”

摘要翻译： 在衬底上形成n型GaN层，在n型GaN层上形成有源层。 在有源层上形成p型GaN层，并且对p型GaN层和有源层的部分进行台面蚀刻，以暴露n型GaN层的一部分。 在p型GaN层上形成凹凸形成层，在凹凸形成层上形成用于形成表面凹凸图案的感光膜图案。 通过使用感光膜图案作为蚀刻掩模来选择性地湿法蚀刻不规则形成层，从而形成表面不规则。 在其上形成有表面凹凸的p型GaN层上形成p电极，在暴露的n型GaN层上形成n电极。

公开(公告)号：US20070184568A1

公开(公告)日：2007-08-09

申请号：US11646406

申请日：2006-12-28

申请人： Dae Yeon Kim ,  Sung Min Hwang ,  Jin Bock Lee ,  Sang Ho Yoon

发明人： Dae Yeon Kim ,  Sung Min Hwang ,  Jin Bock Lee ,  Sang Ho Yoon

IPC分类号： H01L21/00

CPC分类号： H01L33/22 ,  H01L33/44

摘要： Provided a method of manufacturing a GaN-based LED comprising forming an n-type GaN layer on a substrate; forming an active layer on the n-type GaN layer; forming a p-type GaN layer on the active layer; mesa-etching portions of the p-type GaN layer and the active layer so as to expose a portion of the n-type GaN layer; forming an irregularities forming layer on the p-type GaN layer; forming a photosensitive film pattern for forming a surface irregularities pattern on the irregularities forming layer; selectively wet-etching the irregularities forming layer by using the photosensitive film pattern as an etching mask, thereby forming surface irregularities; forming a p-electrode on the p-type GaN layer having the surface irregularities formed thereon; and forming an n-electrode on the exposed n-type GaN layer.

摘要翻译： 提供一种制造GaN基LED的方法，包括在衬底上形成n型GaN层; 在n型GaN层上形成有源层; 在有源层上形成p型GaN层; 蚀刻p型GaN层和有源层的部分，以暴露n型GaN层的一部分; 在p型GaN层上形成凹凸形成层; 形成用于在所述凹凸形成层上形成表面凹凸图案的感光膜图案; 通过使用感光膜图案作为蚀刻掩模来选择性地湿法蚀刻不规则形成层，从而形成表面不规则; 在其上形成有表面凹凸的p型GaN层上形成p电极; 以及在暴露的n型GaN层上形成n电极。

公开(公告)号：US08969895B2

公开(公告)日：2015-03-03

申请号：US13225979

申请日：2011-09-06

申请人： Jae Yoon Kim ,  Jin Bock Lee ,  Seok Min Hwang ,  Su Yeol Lee

发明人： Jae Yoon Kim ,  Jin Bock Lee ,  Seok Min Hwang ,  Su Yeol Lee

IPC分类号： H01L33/00 ,  H01L33/40 ,  H01L33/38 ,  H01L33/42 ,  H01L33/32

CPC分类号： H01L33/005 ,  H01L33/32 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L2933/0016 ,  H01L2933/0058

摘要： A semiconductor light emitting device includes: a light emission structure in which a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer are sequentially stacked; a first electrode formed on the first conductive semiconductor layer; an insulating layer formed on the second conductive semiconductor layer and made of a transparent material; a reflection unit formed on the insulating layer and reflecting light emitted from the active layer; a second electrode formed on the reflection unit; and a transparent electrode formed on the second conductive semiconductor layer, the transparent electrode being in contact with the insulating layer and the second electrode.

摘要翻译： 一种半导体发光器件包括：发光结构，其中第一导电半导体层，有源层和第二导电半导体层依次层叠; 形成在所述第一导电半导体层上的第一电极; 形成在所述第二导电半导体层上并由透明材料制成的绝缘层; 反射单元，形成在所述绝缘层上并反射从所述有源层发射的光; 形成在反射单元上的第二电极; 以及形成在所述第二导电半导体层上的透明电极，所述透明电极与所述绝缘层和所述第二电极接触。

公开(公告)号：US08809893B2

公开(公告)日：2014-08-19

申请号：US13127847

申请日：2009-11-16

申请人： Pun Jae Choi ,  Sang Bum Lee ,  Jin Bock Lee ,  Yu Seung Kim ,  Sang Yeob Song

发明人： Pun Jae Choi ,  Sang Bum Lee ,  Jin Bock Lee ,  Yu Seung Kim ,  Sang Yeob Song

IPC分类号： H01L33/62

CPC分类号： H01L25/13 ,  H01L25/0753 ,  H01L33/002 ,  H01L33/0025 ,  H01L33/0029 ,  H01L33/08 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/387 ,  H01L33/40 ,  H01L33/44 ,  H01L33/486 ,  H01L33/502 ,  H01L33/504 ,  H01L33/507 ,  H01L33/508 ,  H01L33/54 ,  H01L33/56 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/49175 ,  H01L2224/8592 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2933/0041 ,  H05B33/0803 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： The present invention relates to a vertical/horizontal light-emitting diode for a semiconductor. An exemplary embodiment of the present invention provides a semiconductor light-emitting diode comprising: a conductive substrate; a light-emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer sequentially formed over the conductive substrate; a second conductive electrode including a conductive via that passes through the first conductive semiconductor and active layers to be connected with the second conductive semiconductor layer therein, and an electrical connector that extends from the conductive via and is exposed outside the light-emitting structure; a passivation layer for covering a dielectric and at least the side surface of the active layer of the light-emitting structure, the dielectric serving to electrically isolate the second conductive electrode from the conductive substrate, the first conductive semiconductor layer and the active layer; and a surface relief structure formed on the pathway of light emitted from the active layer. According to the present invention, a semiconductor light-emitting diode exhibiting enhanced external light extraction efficiency, especially the diode's side light extraction efficiency, can be obtained.

摘要翻译： 本发明涉及一种用于半导体的垂直/水平发光二极管。 本发明的示例性实施例提供了一种半导体发光二极管，包括：导电衬底; 包括依次形成在所述导电基板上的第一导电半导体层，有源层和第二导电半导体层的发光结构; 第二导电电极，包括通过第一导电半导体的导电通孔和与第二导电半导体层连接的有源层，以及从导电通孔延伸并暴露在发光结构外部的电连接器; 用于覆盖电介质和至少所述发光结构的有源层的侧表面的钝化层，所述电介质用于将所述第二导电电极与所述导电基板，所述第一导电半导体层和所述有源层电隔离; 以及形成在从有源层发射的光的路径上的表面起伏结构。 根据本发明，可以获得具有增强的外部光提取效率，特别是二极管侧光提取效率的半导体发光二极管。

公开(公告)号：US20130240937A1

公开(公告)日：2013-09-19

申请号：US13820459

申请日：2011-09-01

申请人： Seung Wan Chae ,  Tae Hun Kim ,  Su Yeol Lee ,  Jin Bock Lee ,  Jin Hwan Kim ,  Seung Jae Lee ,  Bo Kyoung Kim ,  Jong Ho Lee

发明人： Seung Wan Chae ,  Tae Hun Kim ,  Su Yeol Lee ,  Jin Bock Lee ,  Jin Hwan Kim ,  Seung Jae Lee ,  Bo Kyoung Kim ,  Jong Ho Lee

IPC分类号： H01L33/46

CPC分类号： H01L33/46 ,  H01L24/32 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15788 ,  H01L2924/00014 ,  H01L2924/00

摘要： There is provided a semiconductor light emitting diode (LED) chip including: a semiconductor light emitting diode unit including a light-transmissive substrate, and a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially formed on an upper surface of the light-transmissive substrate; a rear reflective laminate including an auxiliary optical layer formed on a lower surface of the light-transmissive substrate and made of a material having a predetermined refractive index and a metal reflective film formed on a lower surface of the auxiliary optical layer; and a bonding laminate provided on a lower surface of the rear reflective laminate and including a bonding metal layer made of a eutectic metal material and an anti-diffusion film formed to prevent diffusion of elements between the bonding metal layer and the metal reflective film.

摘要翻译： 提供了一种半导体发光二极管（LED）芯片，其包括：半导体发光二极管单元，包括透光基板，以及顺序形成的第一导电型半导体层，有源层和第二导电类型半导体层 在所述透光性基板的上表面上; 后反光层叠体，其包括形成在所述透光性基板的下表面上并由具有预定折射率的材料制成的辅助光学层和形成在所述辅助光学层的下表面上的金属反射膜; 以及设置在后反射层叠体的下表面上并包括由共晶金属材料制成的接合金属层和形成为防止元件在接合金属层和金属反射膜之间扩散的防扩散膜的接合层压体。

公开(公告)号：US20140231859A1

公开(公告)日：2014-08-21

申请号：US14236582

申请日：2011-08-01

申请人： Jae Yoon Kim ,  Seok Min Hwang ,  Su Yeol Lee ,  Seung Wan Chae ,  Jae Ho Han ,  Jin Bock Lee

发明人： Jae Yoon Kim ,  Seok Min Hwang ,  Su Yeol Lee ,  Seung Wan Chae ,  Jae Ho Han ,  Jin Bock Lee

IPC分类号： H01L33/38 ,  H01L33/62 ,  H01L33/32

CPC分类号： H01L33/387 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

摘要： A semiconductor light emitting device may include: a light emitting structure including an n-type semiconductor layer, a p-type semiconductor layer, and an active layer interposed therebetween; a first electrode connected to one of the n-type semiconductor layer and the p-type semiconductor layer; and a second electrode connected to the other of the n-type semiconductor layer and the p-type semiconductor layer. The first electrode may include a first electrode pad disposed in a central portion of one side of the light emitting structure and first to third branch electrodes connected to the first electrode pad, having a fork shape. The second electrode may include second and third electrode pads disposed separately in both corners of the other side opposing the one side and fourth to seventh branch electrodes connected thereto. The fourth and seventh branch electrodes may extend in an interdigitated manner between the first to third branch electrodes.

摘要翻译： 半导体发光器件可以包括：包含n型半导体层，p型半导体层和插入其间的有源层的发光结构; 连接到所述n型半导体层和所述p型半导体层之一的第一电极; 以及与n型半导体层和p型半导体层中的另一方连接的第二电极。 第一电极可以包括设置在发光结构的一侧的中心部分中的第一电极焊盘和连接到具有叉形状的第一电极焊盘的第一至第三分支电极。 第二电极可以包括分别位于与一侧相对的另一侧的两个角部和与其连接的第四至第七分支电极的第二和第三电极焊盘。 第四和第七分支电极可以在第一至第三分支电极之间以叉指方式延伸。

公开(公告)号：US20120032218A1

公开(公告)日：2012-02-09

申请号：US13125256

申请日：2009-10-22

申请人： Pun Jae Choi ,  Yu Seung Kim ,  Jin Bock Lee

发明人： Pun Jae Choi ,  Yu Seung Kim ,  Jin Bock Lee

IPC分类号： H01L33/60 ,  H01L33/62

CPC分类号： H01L33/0075 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/382 ,  H01L33/40 ,  H01L33/405 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2933/0016

摘要： There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.

摘要翻译： 提供一种半导体发光器件，其包括依次堆叠的导电衬底，第一电极层，绝缘层，第二电极层，第二半导体层，有源层和第一半导体层。 第一电极层和第一半导体层之间的接触面积为半导体发光元件的总面积的3〜13％，实现了高的发光效率。

公开(公告)号：US20140197374A1

公开(公告)日：2014-07-17

申请号：US14239231

申请日：2011-08-17

申请人： Seok Min Hwang ,  Jin Bock Lee ,  Tae Sung Jang ,  Jong Gun Woo

发明人： Seok Min Hwang ,  Jin Bock Lee ,  Tae Sung Jang ,  Jong Gun Woo

IPC分类号： H01L33/40

CPC分类号： H01L33/405 ,  H01L33/44 ,  H01L2933/0016

摘要： There is provided a method of manufacturing a nitride semiconductor light emitting device, the method including: forming a light emitting structure on a substrate, the light emitting structure including first and second conductivity-type nitride semiconductor layers with an active layer interposed therebetween; forming a first conductivity-type nitride semiconductor layer, an active layer and a second conductivity-type nitride semiconductor layer sequentially stacked on a substrate; forming a first electrode to be connected to the first conductivity-type nitride semiconductor layer; forming a photoresist film on the second conductivity-type nitride semiconductor layer to expose a portion of the second conductivity-type nitride semiconductor layer; and forming a reflective metal layer and a barrier metal layer as a second electrode consecutively on the portion of the second conductivity-type nitride semiconductor layer exposed by the photoresist film and removing the photoresist film.

摘要翻译： 提供了一种制造氮化物半导体发光器件的方法，所述方法包括：在衬底上形成发光结构，所述发光结构包括介于其间的有源层的第一和第二导电型氮化物半导体层; 形成依次堆叠在基板上的第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层; 形成与第一导电型氮化物半导体层连接的第一电极; 在所述第二导电型氮化物半导体层上形成光致抗蚀剂膜以暴露所述第二导电型氮化物半导体层的一部分; 并且在由光致抗蚀剂膜暴露的第二导电型氮化物半导体层的部分上连续形成反射金属层和阻挡金属层作为第二电极，并除去光致抗蚀剂膜。

公开(公告)号：US08129741B2

公开(公告)日：2012-03-06

申请号：US12608442

申请日：2009-10-29

申请人： Jin Bock Lee ,  Hee Seok Park ,  Hyung Kun Kim ,  Young Jin Lee

发明人： Jin Bock Lee ,  Hee Seok Park ,  Hyung Kun Kim ,  Young Jin Lee

IPC分类号： H01L29/22 ,  H01L33/00 ,  H01L29/24 ,  H01L23/02 ,  H01L23/22 ,  H01L23/24 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/28

CPC分类号： H01L33/483 ,  H01L24/48 ,  H01L24/73 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/05599

摘要： The present invention provides a light emitting diode package including: a package mold having a first cavity and a second cavity with a smaller size than that of the first cavity; first and second electrode pads provided on the bottom surfaces of the first cavity and the second cavity, respectively; an LED chip mounted on the first electrode pad; a wire for providing electrical connection between the LED chip and the second electrode pad; and a molding material filled within the first cavity and the second cavity.

摘要翻译： 本发明提供了一种发光二极管封装，其包括：封装模具，其具有第一空腔和具有比第一空腔小的尺寸的第二空腔; 分别设置在第一腔和第二腔的底表面上的第一和第二电极垫; 安装在所述第一电极焊盘上的LED芯片; 用于在所述LED芯片和所述第二电极焊盘之间提供电连接的导线; 以及填充在第一腔和第二腔内的成型材料。

公开(公告)号：US20080099776A1

公开(公告)日：2008-05-01

申请号：US11907564

申请日：2007-10-15

申请人： Jin Bock Lee ,  Ho Young Song

发明人： Jin Bock Lee ,  Ho Young Song

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L33/387 ,  H01L33/44

摘要： There are provided a nitride semiconductor light emitting device and a method of manufacturing the same, the device including: a first conductivity type nitride semiconductor layer formed on a substrate; an active layer formed on the first conductivity type nitride semiconductor layer; a second conductivity type nitride semiconductor layer formed on the active layer; a light-transmitting low refractive index layer formed on the second conductivity type nitride semiconductor layer, the light-transmitting low refractive index layer having a plurality of openings through which the second conductivity type nitride semiconductor layer is partially exposed and formed of a material having a refractive index lower than a refractive index of the second conductivity type nitride semiconductor layer; and a high conductivity ohmic contact layer formed on the light-transmitting low refractive index layer and connected to the second conductivity type nitride semiconductor layer through the openings of the light-transmitting low refractive index layer.

摘要翻译： 提供了一种氮化物半导体发光器件及其制造方法，该器件包括：形成在衬底上的第一导电型氮化物半导体层; 形成在所述第一导电型氮化物半导体层上的有源层; 形成在有源层上的第二导电型氮化物半导体层; 形成在所述第二导电型氮化物半导体层上的透光低折射率层，所述透光低折射率层具有多个开口，所述第二导电型氮化物半导体层通过所述多个开口部分地暴露并由具有 折射率低于第二导电型氮化物半导体层的折射率; 以及形成在透光低折射率层上并通过透光低折射率层的开口连接到第二导电型氮化物半导体层的高导电欧姆接触层。