公开(公告)号：US07791142B2

公开(公告)日：2010-09-07

申请号：US12291087

申请日：2008-11-06

申请人： Dae-shik Kim ,  Kyoung-mok Son

发明人： Dae-shik Kim ,  Kyoung-mok Son

IPC分类号： H01L23/62

CPC分类号： H01L27/0255

摘要： Provided is an electrostatic discharge (ESD) protection diode including: a well formed of a first conductivity in a semiconductor substrate; an active region that is formed of a second conductivity in the well and includes a plurality of first active lines extending in a first direction; a sub-region of the first conductivity including a plurality of first sub-lines extending in the first direction, the first sub lines being formed in the well, arranged to surround an outer region of the first active lines, and arranged in alternation with the first active lines; a device isolation region separating the active regions and the sub-regions; a plurality of active contacts arranged in a row in the active regions; and a plurality of sub-contacts arranged in a row in the sub-region.

摘要翻译： 提供一种静电放电（ESD）保护二极管，包括：在半导体衬底中由第一导电性形成的阱; 在所述阱中由第二导电性形成的有源区，包括沿第一方向延伸的多个第一有源线; 所述第一导电性的子区域包括在所述第一方向上延伸的多个第一子线，所述第一子线形成在所述阱中，被布置为围绕所述第一有源线的外部区域，并且与所述第一子线交替布置 第一条活动线 分离有源区域和子区域的器件隔离区域; 在活动区域​​中排成行的多个有源触点; 以及在所述子区域中排列成一排的多个子接触。

公开(公告)号：US20090273869A1

公开(公告)日：2009-11-05

申请号：US12291087

申请日：2008-11-06

申请人： Dae-shik Kim ,  Kyoung-mok Son

发明人： Dae-shik Kim ,  Kyoung-mok Son

IPC分类号： H02H9/00

CPC分类号： H01L27/0255

摘要： Provided is an electrostatic discharge (ESD) protection diode including: a well formed of a first conductivity in a semiconductor substrate; an active region that is formed of a second conductivity in the well and includes a plurality of first active lines extending in a first direction; a sub-region of the first conductivity including a plurality of first sub-lines extending in the first direction, the first sub lines being formed in the well, arranged to surround an outer region of the first active lines, and arranged in alternation with the first active lines; a device isolation region separating the active regions and the sub-regions; a plurality of active contacts arranged in a row in the active regions; and a plurality of sub-contacts arranged in a row in the sub-region.

摘要翻译： 提供一种静电放电（ESD）保护二极管，包括：在半导体衬底中由第一导电性形成的阱; 在所述阱中由第二导电性形成的有源区，包括沿第一方向延伸的多个第一有源线; 所述第一导电性的子区域包括在所述第一方向上延伸的多个第一子线，所述第一子线形成在所述阱中，被布置为围绕所述第一有源线的外部区域，并且与所述第一子线交替布置 第一条活动线 分离有源区域和子区域的器件隔离区域; 在活动区域​​中排成行的多个有源触点; 以及在所述子区域中排列成一排的多个子接触。

公开(公告)号：US06552438B2

公开(公告)日：2003-04-22

申请号：US09745241

申请日：2000-12-21

申请人： Soo-cheol Lee ,  Jong-hyon Ahn ,  Kyoung-mok Son ,  Heon-jong Shin ,  Hyae-ryoung Lee ,  Young-pill Kim ,  Moo-jin Jung ,  Son-jong Wang ,  Jae-Cheol Yoo

发明人： Soo-cheol Lee ,  Jong-hyon Ahn ,  Kyoung-mok Son ,  Heon-jong Shin ,  Hyae-ryoung Lee ,  Young-pill Kim ,  Moo-jin Jung ,  Son-jong Wang ,  Jae-Cheol Yoo

IPC分类号： H01L2348

CPC分类号： H01L24/05 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05093 ,  H01L2224/05095 ,  H01L2224/05096 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/49171 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2224/45099

摘要： Bonding pads for integrated circuits include first and second spaced apart conductive layers, a third continuous conductive layer between the first and second spaced apart and an array of unaligned spaced apart insulating islands in the third continuous conductive layer and extending therethrough such that sidewalls of the array of insulating islands are surrounded by the third continuous conductive layer, rows of unaligned spaced apart insulating islands. The array can include rows of unaligned spaced apart insulating islands and columns of unaligned spaced apart insulating islands. The array of unaligned spaced apart insulating islands can also include a first insulating island having a first edge in a first direction and a second insulating island, adjacent to the first insulating island in the first direction having a second edge in the first direction that is unaligned with first edge.

摘要翻译： 用于集成电路的接合焊盘包括第一和第二间隔开的导电层，在第一和第二间隔开之间的第三连续导电层和在第三连续导电层中的非对准间隔开的绝缘岛的阵列并且延伸穿过其中，使得阵列的侧壁 的绝缘岛被第三连续导电层包围，排不对准的间隔开的绝缘岛。 阵列可以包括未对齐的间隔开的绝缘岛列和不对准的间隔隔开的绝缘岛的列。 不对准间隔开的绝缘岛的阵列还可以包括具有第一方向的第一边缘的第一绝缘岛和在第一方向上与第一绝缘岛相邻的第二绝缘岛，该第一绝缘岛在第一方向上具有不对齐的第二边缘 与第一边。