公开(公告)号：US07598564B2

公开(公告)日：2009-10-06

申请号：US11443449

申请日：2006-05-31

申请人： Dae-woong Kang ,  Sung-nam Chang ,  Kwang-jae Lee

发明人： Dae-woong Kang ,  Sung-nam Chang ,  Kwang-jae Lee

IPC分类号： H01L29/788

CPC分类号： H01L29/7881 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/42324

摘要： A non-volatile memory device including a barrier spacer that serves to protect a control gate, including a metal layer, from damage that may result from exposure to a cleaning solution and/or oxygen. With the barrier spacer layer, a cleaning process using a high-power cleaning solution may be used to effectively remove etch byproducts. An oxidation process may be performed to cure etch damage of an intergate dielectric pattern, a floating gate and a gate insulator. The barrier spacer and/or the oxidation process enable a non-volatile memory device having enhanced speed and reliability to be formed.

摘要翻译： 包括用于保护包括金属层的控制栅极免受可能由于暴露于清洁溶液和/或氧气造成的损害的阻挡间隔物的非易失性存储器件。 使用隔离间隔层，可以使用使用大功率清洗溶液的清洁方法来有效地去除蚀刻副产物。 可以执行氧化过程以固化隔间电介质图案，浮动栅极和栅极绝缘体的蚀刻损伤。 隔离间隔物和/或氧化过程使得能够形成具有增强的速度和可靠性的非易失性存储器件。

公开(公告)号：US20070034938A1

公开(公告)日：2007-02-15

申请号：US11443449

申请日：2006-05-31

申请人： Dae-woong Kang ,  Sung-nam Chang ,  Kwang-jae Lee

发明人： Dae-woong Kang ,  Sung-nam Chang ,  Kwang-jae Lee

IPC分类号： H01L29/788

CPC分类号： H01L29/7881 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/42324

摘要： A non-volatile memory device including a barrier spacer that serves to protect a control gate, including a metal layer, from damage that may result from exposure to a cleaning solution and/or oxygen. With the barrier spacer layer, a cleaning process using a high-power cleaning solution may be used to effectively remove etch byproducts. An oxidation process may be performed to cure etch damage of an intergate dielectric pattern, a floating gate and a gate insulator. The barrier spacer and/or the oxidation process enable a non-volatile memory device having enhanced speed and reliability to be formed.

摘要翻译： 包括用于保护包括金属层的控制栅极免受可能由于暴露于清洁溶液和/或氧气造成的损害的阻挡间隔物的非易失性存储器件。 使用隔离间隔层，可以使用使用大功率清洗溶液的清洁方法来有效地去除蚀刻副产物。 可以执行氧化过程以固化隔间电介质图案，浮动栅极和栅极绝缘体的蚀刻损伤。 隔离间隔物和/或氧化过程使得能够形成具有增强的速度和可靠性的非易失性存储器件。