公开(公告)号：US08852463B2

公开(公告)日：2014-10-07

申请号：US12968662

申请日：2010-12-15

申请人： Dai Ishikawa ,  Tomiya Abe

发明人： Dai Ishikawa ,  Tomiya Abe

IPC分类号： H01B1/22 ,  H01B1/02 ,  C23C8/34 ,  B22F1/00

CPC分类号： H01B1/02 ,  B22F1/0062 ,  B22F2998/00 ,  B22F2999/00 ,  C23C8/34 ,  Y10S977/775 ,  Y10S977/777 ,  Y10T428/2982 ,  Y10T428/2993 ,  B22F1/0018 ,  B22F2303/01 ,  B22F2301/255

摘要： A metal fine particle for a conductive metal paste includes a protective agent covering a surface of the metal fine particle. An amount of heat generated per unit mass (g) of the metal fine particle is not less than 500 J at a temperature of an external heat source temperature in a range of 200° C. to 300° C. when being calcined by the external heat source. The protective agent includes at least one selected from the group consisting of dipropylamine, dibutylamine, triethylamine, tripropylamine, tributylamine, butanethiol, pentanethiol, hexanethiol, heptanethiol, octanethiol, nonanethiol, decanethiol, undecanethiol and dodecanethiol. The content of the protective agent is in a range of 0.1 to 20% by mass with respect to the mass of the metal fine particle.

摘要翻译： 用于导电金属浆料的金属微粒包括覆盖金属微粒表面的保护剂。 当外部热源温度在200℃〜300℃的范围内时，金属微粒的单位质量（g）产生的热量不低于500J。 热源。 保护剂包括选自二丙胺，二丁胺，三乙胺，三丙胺，三丁胺，丁硫醇，戊硫醇，己硫醇，庚硫醇，辛硫醇，壬硫醇，癸硫醇，十一烷硫醇和十二烷硫醇中的至少一种。 保护剂的含量相对于金属微粒的质量为0.1〜20质量％。

公开(公告)号：US09309119B2

公开(公告)日：2016-04-12

申请号：US13069825

申请日：2011-03-23

申请人： Yamato Hayashi ,  Yoshihiro Sekiguchi ,  Hirotsugu Takizawa ,  Dai Ishikawa ,  Tomiya Abe

发明人： Yamato Hayashi ,  Yoshihiro Sekiguchi ,  Hirotsugu Takizawa ,  Dai Ishikawa ,  Tomiya Abe

IPC分类号： H01B1/02 ,  B22F9/18 ,  B22F9/04 ,  B22F1/00 ,  C01B13/14 ,  C01B13/32 ,  B82Y30/00 ,  C01G3/02 ,  H01B1/22

CPC分类号： C01B13/322 ,  B22F1/0014 ,  B22F9/04 ,  B22F9/18 ,  B82Y30/00 ,  C01G3/02 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/51 ,  C01P2004/64 ,  H01B1/026 ,  H01B1/22

摘要： There is provided a producing method of metal fine particles or metal oxide fine particles for producing metal fine particles or metal oxide fine particles by atomizing raw materials by performing processes including an oxidizing process and a reducing process to the raw materials composed of metal or a metal compound.

摘要翻译： 提供了通过对由金属或金属构成的原料进行包括氧化处理和还原工序的工序，通过使原料雾化来制造金属微粒或金属氧化物微粒的金属微粒或金属氧化物微粒的制造方法 复合。

公开(公告)号：US08163999B2

公开(公告)日：2012-04-24

申请号：US12427323

申请日：2009-04-21

申请人： Tomiya Abe ,  Yuki Honda ,  Dai Ishikawa

发明人： Tomiya Abe ,  Yuki Honda ,  Dai Ishikawa

IPC分类号： H01B7/00

CPC分类号： H02K3/30 ,  H01B3/306 ,  H02K3/40

摘要： An insulation-coated wire has a conductor, and a semiconductive layer provided at an outer periphery of the conductor. The semiconductive layer has a resin coating including metal fine particles dispersed in a base resin, in which an average particle diameter of the metal fine particles is not greater than 1 μm.

摘要翻译： 绝缘涂覆的导线具有导体和设置在导体外周的半导体层。 半导电层具有包含分散在基体树脂中的金属微粒的树脂涂层，其中金属微粒的平均粒径不大于1μm。

公开(公告)号：US20100108356A1

公开(公告)日：2010-05-06

申请号：US12427323

申请日：2009-04-21

申请人： Tomiya ABE ,  Yuki Honda ,  Dai Ishikawa

发明人： Tomiya ABE ,  Yuki Honda ,  Dai Ishikawa

IPC分类号： H01B7/00

CPC分类号： H02K3/30 ,  H01B3/306 ,  H02K3/40

摘要： An insulation-coated wire has a conductor, and a semiconductive layer provided at an outer periphery of the conductor, the semiconductive layer comprising a resin coating comprising metal fine particles dispersed in a base resin, in which an average particle diameter of the metal fine particles is not greater than 1 μm.

摘要翻译： 绝缘被覆线具有导体和设置在导体的外周的半导体层，半导电层包括包含分散在基础树脂中的金属微粒的树脂涂层，其中金属微粒的平均粒径 不大于1μm。

公开(公告)号：US08816207B2

公开(公告)日：2014-08-26

申请号：US12483719

申请日：2009-06-12

申请人： Tomiya Abe ,  Dai Ishikawa ,  Masanobu Ito ,  Tadayoshi Tsuchiya

发明人： Tomiya Abe ,  Dai Ishikawa ,  Masanobu Ito ,  Tadayoshi Tsuchiya

IPC分类号： H01B9/02 ,  H01B13/24 ,  H01B11/18 ,  B82Y30/00 ,  H01B3/44 ,  H01B13/22

CPC分类号： H01B11/1817 ,  B05D2256/00 ,  B82Y30/00 ,  H01B3/445 ,  H01B13/225 ,  H01B13/24

摘要： The invention provides a coaxial cable including an internal insulating layer formed on an outer periphery of an electric conductor, a conductive layer formed on an outer periphery of the internal insulating layer, and an external insulating layer formed on an outer periphery of the conductive layer. The conductive layer is made of a metal nanoparticle paste sintered body obtained by sintering metal nanoparticles by irradiation of light toward a metal nanoparticles paste.

摘要翻译： 本发明提供了一种同轴电缆，包括形成在导电体的外周上的内部绝缘层，形成在内部绝缘层的外周上的导电层和形成在导电层的外周上的外部绝缘层。 导电层由金属纳米粒子糊料烧结体制成，该烧结体通过将光照射到金属纳米粒子糊料上烧结金属纳米粒子而获得。

公开(公告)号：US08304654B2

公开(公告)日：2012-11-06

申请号：US12641974

申请日：2009-12-18

申请人： Tomiya Abe ,  Masanobu Ito ,  Dai Ishikawa

发明人： Tomiya Abe ,  Masanobu Ito ,  Dai Ishikawa

IPC分类号： H01B7/18 ,  H01B9/02 ,  H01B3/30 ,  H01B3/44 ,  H01B7/295

CPC分类号： H01B11/1817 ,  C08K3/08 ,  C08K2201/011 ,  H01B3/445

摘要： A coaxial cable includes an electric conductor, an insulating layer formed on a periphery of the electric conductor, wherein the insulating layer includes an insulating material including a fluorine-containing polymer obtained by grafting at least one compound selected from unsaturated carboxylic acids and esters of the unsaturated carboxylic acids to a tetrafluoroethylene-perfluoroalkylvinylether copolymer, a conductive layer formed on a periphery of the insulating layer, wherein the conductive layer includes a sintered product from a metallic nanoparticle paste, and an outer insulating layer formed on a periphery of the conductive layer.

摘要翻译： 同轴电缆包括电导体，形成在电导体的周边上的绝缘层，其中绝缘层包括绝缘材料，绝缘材料包括通过接枝选自不饱和羧酸和不饱和羧酸的酯的至少一种化合物而获得的含氟聚合物 不饱和羧酸与四氟乙烯 - 全氟烷基乙烯基醚共聚物，导电层，形成在绝缘层的周围，其中导电层包括来自金属纳米颗粒糊的烧结产物和形成在导电层周围的外绝缘层。

公开(公告)号：US20060275991A1

公开(公告)日：2006-12-07

申请号：US11505280

申请日：2006-08-17

申请人： Dai Ishikawa ,  Satoshi Sakai ,  Atsushi Hiraiwa

发明人： Dai Ishikawa ,  Satoshi Sakai ,  Atsushi Hiraiwa

IPC分类号： H01L21/336 ,  H01L29/76

CPC分类号： H01L21/28185 ,  H01L21/0214 ,  H01L21/02332 ,  H01L21/28202 ,  H01L21/3143 ,  H01L21/82345 ,  H01L21/823462 ,  H01L21/823842 ,  H01L21/823857 ,  H01L27/1052 ,  H01L27/10814 ,  H01L27/10888 ,  H01L27/10894 ,  H01L29/513 ,  H01L29/518 ,  H01L29/6659 ,  H01L29/7833

摘要： A method of manufacturing a semiconductor integrated circuit device comprising forming a silicon oxide film as thin as 5 nm or less on the surfaces of p type wells and n type wells by wet oxidizing a substrate, heating the substrate in an atmosphere containing about 5% of an NO gas to introduce nitrogen into the silicon oxide film so as to form a silicon oxynitride film, exposing the substrate to a nitrogen plasma atmosphere to further introduce nitrogen into the silicon oxynitride film in order to form a silicon oxynitride gate insulating film having a first peak concentration near the interface with the substrate and a second peak concentration near the surface thereof. Thereby, the concentration of nitrogen in the gate insulating film is increased without raising the concentration of nitrogen near the interface between the substrate and the gate insulating film to a higher level than required.

公开(公告)号：US20050020018A1

公开(公告)日：2005-01-27

申请号：US10917294

申请日：2004-08-13

申请人： Dai Ishikawa ,  Satoshi Sakai ,  Atsushi Hiraiwa

发明人： Dai Ishikawa ,  Satoshi Sakai ,  Atsushi Hiraiwa

IPC分类号： H01L27/04 ,  H01L21/28 ,  H01L21/314 ,  H01L21/822 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/8242 ,  H01L27/092 ,  H01L27/10 ,  H01L27/108 ,  H01L29/51 ,  H01L29/78 ,  H01L21/4763 ,  H01L21/336 ,  H01L21/31 ,  H01L21/3205 ,  H01L21/469

CPC分类号： H01L21/28185 ,  H01L21/0214 ,  H01L21/02332 ,  H01L21/28202 ,  H01L21/3143 ,  H01L21/82345 ,  H01L21/823462 ,  H01L21/823842 ,  H01L21/823857 ,  H01L27/1052 ,  H01L27/10814 ,  H01L27/10888 ,  H01L27/10894 ,  H01L29/513 ,  H01L29/518 ,  H01L29/6659 ,  H01L29/7833

摘要： A method of manufacturing a semiconductor integrated circuit device comprising forming a silicon oxide film as thin as 5 nm or less on the surfaces of p type wells and n type wells by wet oxidizing a substrate, heating the substrate in an atmosphere containing about 5% of an NO gas to introduce nitrogen into the silicon oxide film so as to form a silicon oxynitride film, exposing the substrate to a nitrogen plasma atmosphere to further introduce nitrogen into the silicon oxynitride film in order to form a silicon oxynitride gate insulating film having a first peak concentration near the interface with the substrate and a second peak concentration near the surface thereof. Thereby, the concentration of nitrogen in the gate insulating film is increased without raising the concentration of nitrogen near the interface between the substrate and the gate insulating film to a higher level than required.

摘要翻译： 一种制造半导体集成电路器件的方法，包括在p型阱和n型阱的表面上通过湿式氧化衬底形成薄至5nm或更小的氧化硅膜，在含有约5％ 用于将氮气引入到氧化硅膜中以形成氧氮化硅膜的NO气体，将衬底暴露于氮等离子体气氛中，以进一步将氮气引入氮氧化硅膜中，以形成具有第一个氮氧化物的氮氧化硅栅极绝缘膜 与基板的界面附近的峰值浓度和其表面附近的第二峰值浓度。 由此，不会使衬底与栅极绝缘膜的界面附近的氮浓度提高到高于所需的水平，所以栅极绝缘膜的氮浓度增加。

公开(公告)号：US07662696B2

公开(公告)日：2010-02-16

申请号：US11690521

申请日：2007-03-23

申请人： Atsushi Hiraiwa ,  Satoshi Sakai ,  Dai Ishikawa ,  Yoshihiro Ikeda

发明人： Atsushi Hiraiwa ,  Satoshi Sakai ,  Dai Ishikawa ,  Yoshihiro Ikeda

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28273 ,  H01L21/3105 ,  H01L21/823857 ,  H01L27/105 ,  H01L27/11521 ,  H01L27/11526 ,  H01L29/513 ,  H01L29/518 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to the present invention, an oxide film with the film quality almost equivalent to that of the thermal oxide can be formed by the low-temperature treatment. After removing an insulator on the active region of the substrate which constitutes a semiconductor wafer, an insulator made of, for example, silicon oxide is deposited on the main surface of the semiconductor wafer by the low pressure CVD method. This insulator is a film to form a gate insulator of MISFET in a later step. Subsequently, a plasma treatment is performed in an atmosphere containing oxygen (oxygen plasma treatment) to the insulator in the manner as schematically shown by the arrows. By so doing, the film quality of the insulator formed by the CVD method can be improved to the extent almost equivalent to that of the insulator formed of the thermal oxide.

摘要翻译： 根据本发明，可以通过低温处理形成膜质量几乎等于热氧化物的氧化膜。 在构成半导体晶片的基板的有源区域上去除绝缘体之后，通过低压CVD法在半导体晶片的主表面上沉积由例如氧化硅制成的绝缘体。 该绝缘体是在后续步骤中形成MISFET的栅极绝缘体的膜。 随后，按照箭头示意性地示出的方式，在含有氧的气氛（氧等离子体处理）中对绝缘体进行等离子体处理。 通过这样做，通过CVD方法形成的绝缘体的膜质量可以提高到与由热氧化物形成的绝缘体几乎相同的程度。

公开(公告)号：US20070190744A1

公开(公告)日：2007-08-16

申请号：US11690521

申请日：2007-03-23

申请人： Atsushi Hiraiwa ,  Satoshi Sakai ,  Dai Ishikawa ,  Yoshihiro Ikeda

发明人： Atsushi Hiraiwa ,  Satoshi Sakai ,  Dai Ishikawa ,  Yoshihiro Ikeda

IPC分类号： H01L21/76

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28273 ,  H01L21/3105 ,  H01L21/823857 ,  H01L27/105 ,  H01L27/11521 ,  H01L27/11526 ,  H01L29/513 ,  H01L29/518 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to the present invention, an oxide film with the film quality almost equivalent to that of the thermal oxide can be formed by the low-temperature treatment. After removing an insulator on the active region of the substrate which constitutes a semiconductor wafer, an insulator made of, for example, silicon oxide is deposited on the main surface of the semiconductor wafer by the low pressure CVD method. This insulator is a film to form a gate insulator of MISFET in a later step. Subsequently, a plasma treatment is performed in an atmosphere containing oxygen (oxygen plasma treatment) to the insulator in the manner as schematically shown by the arrows. By so doing, the film quality of the insulator formed by the CVD method can be improved to the extent almost equivalent to that of the insulator formed of the thermal oxide.

摘要翻译： 根据本发明，可以通过低温处理形成膜质量几乎等于热氧化物的氧化膜。 在构成半导体晶片的基板的有源区域上去除绝缘体之后，通过低压CVD法在半导体晶片的主表面上沉积由例如氧化硅制成的绝缘体。 该绝缘体是在后续步骤中形成MISFET的栅极绝缘体的膜。 随后，按照箭头示意性地示出的方式，在含有氧的气氛（氧等离子体处理）中对绝缘体进行等离子体处理。 通过这样做，通过CVD方法形成的绝缘体的膜质量可以提高到与由热氧化物形成的绝缘体几乎相同的程度。