公开(公告)号：US20110229826A1

公开(公告)日：2011-09-22

申请号：US13118779

申请日：2011-05-31

申请人： Daisuke KAWAMURA ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Yasunobu Onishi ,  Shinichi Ito ,  Tatsuhiko Higashiki

发明人： Daisuke KAWAMURA ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Yasunobu Onishi ,  Shinichi Ito ,  Tatsuhiko Higashiki

IPC分类号： G03F7/20

CPC分类号： G03F7/70925 ,  G03F7/70341

摘要： This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure.

摘要翻译： 本发明公开了一种通过浸渍曝光在待处理衬底上形成抗蚀剂图案的方法。 在被处理基板的上表面的中央部，在上表面的斜面部分上形成抗蚀剂膜，该斜面部分是通过倒角被处理基板的周边部分而得到的， 待处理衬底的端部。 在抗蚀剂膜和曝光装置的投影光学系统的构成元素之间存在折射率高于空气的液体的情况下，在抗蚀剂膜上形成期望图案的潜像的图案曝光，其为 最接近被处理衬底。 在执行图案曝光之后，通过向被处理基板的端部供给冲洗液，除去形成在被处理基板的端部的抗蚀剂膜。

公开(公告)号：US07968272B2

公开(公告)日：2011-06-28

申请号：US11600198

申请日：2006-11-16

申请人： Daisuke Kawamura ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Yasunobu Onishi ,  Shinichi Ito ,  Tatsuhiko Higashiki

发明人： Daisuke Kawamura ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Yasunobu Onishi ,  Shinichi Ito ,  Tatsuhiko Higashiki

IPC分类号： G03C5/04

CPC分类号： G03F7/70925 ,  G03F7/70341

摘要： This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure.

摘要翻译： 本发明公开了一种通过浸渍曝光在待处理衬底上形成抗蚀剂图案的方法。 在被处理基板的上表面的中央部，在上表面的斜面部分上形成抗蚀剂膜，该斜面部分是通过倒角被处理基板的周边部分而得到的， 待处理衬底的端部。 在抗蚀剂膜和曝光装置的投影光学系统的构成元素之间存在折射率高于空气的液体的情况下，在抗蚀剂膜上形成期望图案的潜像的图案曝光，其为 最接近被处理衬底。 在执行图案曝光之后，通过向被处理基板的端部供给冲洗液，除去形成在被处理基板的端部的抗蚀剂膜。

公开(公告)号：US20070128554A1

公开(公告)日：2007-06-07

申请号：US11600198

申请日：2006-11-16

申请人： Daisuke Kawamura ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Yasunobu Onishi ,  Shinichi Ito ,  Tatsuhiko Higashiki

发明人： Daisuke Kawamura ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Yasunobu Onishi ,  Shinichi Ito ,  Tatsuhiko Higashiki

IPC分类号： G03F7/20

CPC分类号： G03F7/70925 ,  G03F7/70341

摘要： This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure.

摘要翻译： 本发明公开了一种通过浸渍曝光在待处理衬底上形成抗蚀剂图案的方法。 在被处理基板的上表面的中央部，在上表面的斜面部分上形成抗蚀剂膜，该斜面部分是通过倒角被处理基板的周边部分而得到的， 待处理衬底的端部。 在抗蚀剂膜和曝光装置的投影光学系统的构成元素之间存在折射率高于空气的液体的情况下，在抗蚀剂膜上形成期望图案的潜像的图案曝光，其为 最接近被处理衬底。 在执行图案曝光之后，通过向被处理基板的端部供给冲洗液，除去形成在被处理基板的端部的抗蚀剂膜。

公开(公告)号：US06730447B2

公开(公告)日：2004-05-04

申请号：US10092486

申请日：2002-03-08

申请人： Shinichi Ito ,  Tatsuhiko Higashiki ,  Hiroshi Ikegami ,  Nobuo Hayasaka

发明人： Shinichi Ito ,  Tatsuhiko Higashiki ,  Hiroshi Ikegami ,  Nobuo Hayasaka

IPC分类号： G03C500

CPC分类号： G03F7/70633 ,  B23K26/04 ,  B23K26/042 ,  B23K2101/40 ,  G03F9/7076 ,  Y10S430/146 ,  Y10T29/413

摘要： A laser processing apparatus comprises a laser oscillator for producing a laser beam to selectively remove part of a substrate to be processed, a scanning system for applying the laser beam to an arbitrary position of the substrate and incident means for applying the laser beam to the substrate substantially at right angle.

摘要翻译： 激光加工装置包括：激光振荡器，用于产生激光束以选择性地去除待处理的基板的一部分，用于将激光束施加到基板的任意位置的扫描系统和用于将激光束施加到基板的入射装置 基本上是直角。

公开(公告)号：US07018932B2

公开(公告)日：2006-03-28

申请号：US10377597

申请日：2003-03-04

申请人： Shinichi Ito ,  Tatsuhiko Higashiki ,  Katsuya Okumura ,  Kenji Kawano ,  Soichi Inoue

发明人： Shinichi Ito ,  Tatsuhiko Higashiki ,  Katsuya Okumura ,  Kenji Kawano ,  Soichi Inoue

IPC分类号： H01L21/027 ,  G03F9/00

CPC分类号： G03F7/70625 ,  G03F7/70633 ,  G03F7/70641 ,  G03F7/70675 ,  H01J2237/30438

摘要： A method for manufacturing a semiconductor device including, forming a photosensitive-film on a substrate, carrying the substrate on which the photosensitive-film is formed, to an exposure device provided with a mask in which an on-mask-inspection-mark and an on-mask-device-pattern are formed, selectively exposing the photosensitive-film to light to transfer the on-mask-inspection-mark to the photosensitive-film to form a latent-image of the inspection-mark on the photosensitive-film, heating at least that area of the photosensitive-film in which the latent-image of the inspection-mark is formed, measuring the inspection-mark, changing set-values for the exposure device used for the selective exposure, on the basis of result of the measurement so that exposure conditions conform to the set-values, exposing the photosensitive-film on the basis of the changed set-values to transfer the on-mask-device-pattern to the photosensitive-film to form a latent image of the device-pattern on the photosensitive-film, heating an entire surface of the photosensitive-film, and developing the photosensitive-film.

摘要翻译： 一种半导体器件的制造方法，其特征在于，在将基板上形成有感光膜的基板上形成感光膜的制造方法，设置在具有掩模检查标记和掩模检查标记的掩模的曝光装置 形成掩模装置图案，选择性地将感光膜曝光以将掩模检查标记转印到感光膜上，以在感光膜上形成检查标记的潜像， 至少加热其中形成有检查标记的潜像的感光膜的面积，测量检查标记，改变用于选择性曝光的曝光装置的设定值，基于 所述测量使得曝光条件符合设定值，基于改变的设定值曝光感光膜以将掩模设备图案转印到感光膜上以形成该设备的潜像 p图案在p 感光膜，加热感光膜的整个表面，并显影感光膜。

公开(公告)号：US08609014B2

公开(公告)日：2013-12-17

申请号：US13150961

申请日：2011-06-01

申请人： Tsukasa Azuma ,  Tatsuhiko Higashiki ,  Kyoichi Suguro

发明人： Tsukasa Azuma ,  Tatsuhiko Higashiki ,  Kyoichi Suguro

IPC分类号： B29C67/20

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

摘要： According to one embodiment, a template manufacturing method is a method for manufacturing a template for use in an imprint processing in which a pattern having irregularities are formed on a principal surface, and the pattern is brought into contact with a resist member formed on a substrate to be processed, to transfer the pattern to the resist member, the method including implanting charged particles at least into the bottoms of concave portions of the template.

摘要翻译： 根据一个实施例，模板制造方法是用于制造在压印处理中使用的模板的方法，其中在主表面上形成具有凹凸的图案，并且图案与形成在基板上的抗蚀剂部件接触 要被处理以将图案转印到抗蚀剂构件上，该方法包括将带电粒子至少注入到模板的凹部的底部中。

公开(公告)号：US07630052B2

公开(公告)日：2009-12-08

申请号：US11024322

申请日：2004-12-29

申请人： Takuya Kono ,  Nobuhiro Komine ,  Tatsuhiko Higashiki ,  Shoichi Harakawa ,  Makato Ikeda

发明人： Takuya Kono ,  Nobuhiro Komine ,  Tatsuhiko Higashiki ,  Shoichi Harakawa ,  Makato Ikeda

IPC分类号： G03B27/32 ,  G03B27/54 ,  G03D5/00 ,  G03C5/00 ,  H01L21/00

CPC分类号： H01L21/67253

摘要： An exposure processing system comprises an exposure apparatus to expose a resist on a wafer, a heating apparatus comprising heating apparatus units, the heating apparatus heating the exposed resist by a heating apparatus unit in the heating apparatus units, a developing apparatus comprising developing apparatus units, the developing apparatus developing the exposed and heated resist by a developing apparatus unit in the developing apparatus units, and a control apparatus to control the exposure apparatus by using correction data so that a wafer on process object being exposed, the correction data being data for correcting a dimensional dispersion of a resist pattern caused by a pair of heating apparatus unit and developing apparatus unit used for the wafer on the process object, the pair of heating and developing apparatus unit comprising a heating and developing apparatus unit in the heating and developing apparatus used for the wafer on the process object.

摘要翻译： 曝光处理系统包括：曝光装置，用于在晶片上曝光抗蚀剂，加热装置包括加热装置单元，加热装置通过加热装置单元中的加热装置加热曝光的抗蚀剂;显影装置，包括显影装置单元， 显影装置通过显影装置单元中的显影装置单元显影曝光和加热的抗蚀剂;以及控制装置，通过使用校正数据来控制曝光装置，使得处理对象被曝光的晶片，校正数据是用于校正的数据 由一对加热装置单元和用于处理对象上的晶片的显影装置单元引起的抗蚀剂图案的尺寸分散，所述一对加热显影装置单元包括使用的加热和显影装置中的加热和显影装置单元 用于处理对象上的晶圆。

公开(公告)号：US20070096764A1

公开(公告)日：2007-05-03

申请号：US11586527

申请日：2006-10-26

申请人： Takuya Kono ,  Tatsuhiko Higashiki

发明人： Takuya Kono ,  Tatsuhiko Higashiki

IPC分类号： G01R31/26

CPC分类号： G03F7/70341

摘要： An immersion exposure apparatus includes a substrate holding unit which holds a substrate to be exposed, a projection lens provided above the substrate holding unit to supply exposure light to the substrate held on the substrate holding unit, a liquid supply unit which supplies a liquid to an area between the substrate held on the substrate holding unit and the projection lens, and a structural unit which surrounds the substrate holding unit and which is configured to supply an interposer to an area between the structural unit and the substrate held on the substrate holding unit.

摘要翻译： 浸渍曝光装置包括：保持要曝光的基板的基板保持单元;设置在基板保持单元上方的投影透镜，用于向保持在基板保持单元上的基板提供曝光光;液体供应单元， 保持在基板保持单元上的基板与投影透镜之间的区域以及围绕基板保持单元的结构单元，其构造成将中介层提供给保持在基板保持单元上的结构单元和基板之间的区域。

公开(公告)号：US06479201B2

公开(公告)日：2002-11-12

申请号：US09866737

申请日：2001-05-30

申请人： Tatsuhiko Higashiki

发明人： Tatsuhiko Higashiki

IPC分类号： G03F900

CPC分类号： G03F9/7026 ,  G03F7/70358 ,  G03F9/7003 ,  G03F9/7011 ,  G03F9/7034

摘要： In an optical exposure apparatus of a scan-exposure system, scan-exposure is preliminarily executed before an actual scan-exposure, and a reticle position measuring device measures a positional change of a reticle in the upper and lower direction with the movement of a reticle stage to a scanning direction. Then, a calculation circuit obtains correction data for an offset based on the measuring value to be stored in a memory. Thereafter, correction data stored in the memory is sequentially supplied to a feedback controlling circuit at an actual scan-exposure time. Also, a measuring value of the position of a wafer in a Z-axial direction with the movement of the wafer stage to the scanning direction, relatively moving with the reticle stage, is supplied to the feedback controlling circuit from a wafer position measuring device. The feedback controlling circuit controls a wafer Z-axial driving mechanism such that the position of the wafer in the Z-axial direction is offset by a positional change of the reticle in upper and lower directions. Thereby, correcting a shift of a projection image from a focal position at an exposure surface on the wafer due to deformation (curve and tilt) of the reticle and the upper and lower movement.

摘要翻译： 在扫描曝光系统的光学曝光装置中，在实际的扫描曝光之前预先执行扫描曝光，并且光罩位置测量装置通过标线的移动来测量上模和下方向上的标线的位置变化 阶段到扫描方向。 然后，计算电路基于要存储在存储器中的测量值获得偏移的校正数据。 此后，存储在存储器中的校正数据以实际扫描曝光时间顺序地提供给反馈控制电路。 此外，通过晶片载台与扫描方向的移动相对于标线片载台移动的Z轴方向的晶片位置的测量值从晶片位置测量装置提供给反馈控制电路。 反馈控制电路控制晶片Z轴驱动机构，使得晶片在Z轴方向上的位置被上模和下方的标线的位置变化偏移。 由此，由于掩模版的变形（曲线和倾斜）以及上下运动，校正投影图像从晶片上的曝光表面的焦点位置的偏移。

公开(公告)号：US08174669B2

公开(公告)日：2012-05-08

申请号：US12510009

申请日：2009-07-27

申请人： Tatsuhiko Higashiki ,  Hiroshi Tomita

发明人： Tatsuhiko Higashiki ,  Hiroshi Tomita

IPC分类号： G03B27/52 ,  G03B27/42

CPC分类号： G02B27/0006 ,  G03F7/70341 ,  G03F7/70925

摘要： There is disclosed is a liquid immersion optical tool, which comprises a light source, an optical lens system, a stage which moves an object base on which an object is to be placed, a head comprising a liquid immersion medium fluid supply device and a liquid immersion medium fluid discharge device to provide a layer of liquid immersion medium fluid between the optical lens system and the object, a fence which limits a region of the layer of liquid immersion medium fluid, and a cleaning device which cleans a portion having been contacted with the liquid immersion medium fluid by means of a cleaning solution.

摘要翻译： 公开了一种液浸光学工具，其包括光源，光学透镜系统，移动待放置物体的物体基座的台，包括浸液介质流体供应装置的头部和液体 浸没介质流体排出装置，以在光学透镜系统和物体之间提供液浸介质流体层，限制液浸介质流体层的区域的栅栏，以及清洁与已经接触的部分的清洁装置 液体介质流体通过清洗溶液。