公开(公告)号：US08854586B2

公开(公告)日：2014-10-07

申请号：US13447398

申请日：2012-04-16

申请人： Daisuke Kubota ,  Tetsuji Ishitani ,  Shuji Fukai

发明人： Daisuke Kubota ,  Tetsuji Ishitani ,  Shuji Fukai

IPC分类号： G02F1/1343 ,  G02F1/1337 ,  G02F1/137

CPC分类号： G02F1/133707 ,  G02F1/134363 ,  G02F2001/13793

摘要： An object is to provide a liquid crystal display device using a liquid crystal material exhibiting a blue phase, in order to enable a higher contrast. In a liquid crystal display device which includes a liquid crystal layer exhibiting a blue phase, a first structure body and a second structure body are provided over a first electrode layer (a pixel electrode layer) and a second electrode layer (a common electrode layer), respectively. The first structure body and the second structure body are insulators each having a higher dielectric constant than a liquid crystal material used for the liquid crystal layer, and are provided to project into the liquid crystal layer.

摘要翻译： 目的是提供一种使用具有蓝相的液晶材料的液晶显示装置，以实现更高的对比度。 在包括具有蓝相的液晶层的液晶显示装置中，在第一电极层（像素电极层）和第二电极层（公共电极层）上设置第一结构体和第二结构体， ， 分别。 第一结构体和第二结构体是具有比用于液晶层的液晶材料高的介电常数的绝缘体，并且设置成突出到液晶层中。

公开(公告)号：US20120200809A1

公开(公告)日：2012-08-09

申请号：US13447398

申请日：2012-04-16

申请人： Daisuke KUBOTA ,  Tetsuji Ishitani ,  Shuji Fukai

发明人： Daisuke KUBOTA ,  Tetsuji Ishitani ,  Shuji Fukai

IPC分类号： G02F1/1333

CPC分类号： G02F1/133707 ,  G02F1/134363 ,  G02F2001/13793

摘要： An object is to provide a liquid crystal display device using a liquid crystal material exhibiting a blue phase, in order to enable a higher contrast. In a liquid crystal display device which includes a liquid crystal layer exhibiting a blue phase, a first structure body and a second structure body are provided over a first electrode layer (a pixel electrode layer) and a second electrode layer (a common electrode layer), respectively. The first structure body and the second structure body are insulators each having a higher dielectric constant than a liquid crystal material used for the liquid crystal layer, and are provided to project into the liquid crystal layer.

摘要翻译： 目的是提供一种使用具有蓝相的液晶材料的液晶显示装置，以便能够实现更高的对比度。 在包括具有蓝相的液晶层的液晶显示装置中，在第一电极层（像素电极层）和第二电极层（公共电极层）上设置第一结构体和第二结构体， ， 分别。 第一结构体和第二结构体是具有比用于液晶层的液晶材料高的介电常数的绝缘体，并且设置成突出到液晶层中。

公开(公告)号：US08184253B2

公开(公告)日：2012-05-22

申请号：US12783764

申请日：2010-05-20

申请人： Daisuke Kubota ,  Tetsuji Ishitani ,  Shuji Fukai

发明人： Daisuke Kubota ,  Tetsuji Ishitani ,  Shuji Fukai

IPC分类号： G02F1/1343

CPC分类号： G02F1/133707 ,  G02F1/134363 ,  G02F2001/13793

摘要： An object is to provide a liquid crystal display device using a liquid crystal material exhibiting a blue phase, in order to enable a higher contrast. In a liquid crystal display device which includes a liquid crystal layer exhibiting a blue phase, a first structure body and a second structure body are provided over a first electrode layer (a pixel electrode layer) and a second electrode layer (a common electrode layer), respectively. The first structure body and the second structure body are insulators each having a higher dielectric constant than a liquid crystal material used for the liquid crystal layer, and are provided to project into the liquid crystal layer.

摘要翻译： 目的是提供一种使用具有蓝相的液晶材料的液晶显示装置，以实现更高的对比度。 在包括具有蓝相的液晶层的液晶显示装置中，在第一电极层（像素电极层）和第二电极层（公共电极层）上设置第一结构体和第二结构体， ， 分别。 第一结构体和第二结构体是具有比用于液晶层的液晶材料高的介电常数的绝缘体，并且设置成突出到液晶层中。

公开(公告)号：US20100231842A1

公开(公告)日：2010-09-16

申请号：US12717580

申请日：2010-03-04

申请人： Tetsuji Ishitani ,  Daisuke Kubota ,  Akio Yamashita ,  Shuji Fukai

发明人： Tetsuji Ishitani ,  Daisuke Kubota ,  Akio Yamashita ,  Shuji Fukai

IPC分类号： G02F1/1339

CPC分类号： G02F1/13394 ,  G02F1/13718 ,  G02F2001/13396

摘要： To provide a liquid crystal display device in which a cell thickness (the thickness of a liquid crystal layer) having a certain value or more is secured, or to increase productivity of the liquid crystal display device. The liquid crystal display device includes a first substrate, a second substrate, a first spacer layer provided for the first substrate, a second spacer layer provided for the second substrate, and a liquid crystal layer including a liquid crystal between the first substrate and the second substrate, in which the thickness of the liquid crystal layer is controlled to be 6 μm or more and the birefringence Δn of the liquid crystal layer under a white display condition is 0.05 or less.

摘要翻译： 提供确保具有一定值以上的单元厚度（液晶层的厚度）的液晶显示装置，或提高液晶显示装置的生产率。 液晶显示装置包括第一基板，第二基板，为第一基板设置的第一间隔层，设置在第二基板上的第二间隔层，以及在第一基板和第二基板之间具有液晶的液晶层 其中液晶层的厚度被控制在6μm以上，并且在白色显示条件下液晶层的双折射＆Dgr; n为0.05以下的基板。

公开(公告)号：US07749804B2

公开(公告)日：2010-07-06

申请号：US12431168

申请日：2009-04-28

申请人： Yoshiharu Hirakata ,  Tetsuji Ishitani ,  Shuji Fukai ,  Ryota Imahayashi

发明人： Yoshiharu Hirakata ,  Tetsuji Ishitani ,  Shuji Fukai ,  Ryota Imahayashi

IPC分类号： H01L51/40

CPC分类号： B82Y10/00 ,  H01L51/0024 ,  H01L51/0034 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/0038 ,  H01L51/0041 ,  H01L51/0051 ,  H01L51/0053 ,  H01L51/0093 ,  H01L51/0545

摘要： It is an object of the present invention to provide a method for manufacturing an inexpensive organic TFT which does not depend on an expensive dedicated device and does not expose an organic semiconductor to atmospheric air. Moreover, it is another object of the present invention to provide a method for manufacturing an organic TFT at low temperature so as not to cause a problem of pyrolyzing a material. In view of the foregoing problems, one feature of the present invention is that a film-like protector which serves as a protective film is provided over an organic semiconductor film. The film-like protector can be formed by being fixed to a film-like support body with an adhesive agent or the like.

摘要翻译： 本发明的目的是提供一种不依赖于昂贵的专用装置并且不将有机半导体暴露于大气中的便宜的有机TFT的制造方法。 此外，本发明的另一个目的是提供一种在低温下制造有机TFT的方法，从而不会引起材料的热解问题。 鉴于上述问题，本发明的一个特征是在有机半导体膜上设置用作保护膜的膜状保护膜。 膜状保护器可以通过用粘合剂等固定到膜状支撑体上而形成。

公开(公告)号：US20100038636A1

公开(公告)日：2010-02-18

申请号：US12605537

申请日：2009-10-26

申请人： Yoshiharu Hirakata ,  Tetsuji Ishitani ,  Shuji Fukai ,  Ryota Imahayashi

发明人： Yoshiharu Hirakata ,  Tetsuji Ishitani ,  Shuji Fukai ,  Ryota Imahayashi

IPC分类号： H01L51/10

CPC分类号： H01L51/0545 ,  H01L51/0003 ,  H01L51/0037

摘要： There have been problems in that a dedicated apparatus is needed for a conventional method of manufacturing an organic thin film transistor and in that: a little amount of an organic semiconductor film is formed with respect to a usage amount of a material; and most of the used material is discarded. Further, apparatus maintenance such as cleaning of the inside of an apparatus cup or chamber has needed to be frequently carried out in order to remove the contamination resulting from the material that is wastefully discarded. Therefore, a great cost for materials and man-hours for maintenance of apparatus have been required. In the present invention, a uniform organic semiconductor film is formed by forming an aperture between a first substrate for forming the organic semiconductor film and a second substrate used for injection with an insulating film formed at a specific spot and by injecting an organic semiconductor film material into the aperture due to capillarity to the aperture. The insulating film formed at the specific spot enables formation of the organic semiconductor film with high controllability. Further, the insulating film can also serve as a spacer that holds the aperture, that is, an interval (gap) between the substrates.

摘要翻译： 存在的问题在于，制造有机薄膜晶体管的常规方法需要专用设备，并且其中：相对于材料的使用量形成少量的有机半导体膜; 大部分废旧材料被丢弃。 此外，需要频繁地进行设备维护，例如清洁装置杯或室的内部，以便去除由废弃材料造成的污染。 因此，需要维护设备的材料和工时的巨大成本。 在本发明中，通过在用于形成有机半导体膜的第一基板和用于注入的第二基板之间形成孔，形成均匀的有机半导体膜，所述第二基板在形成于特定点处的绝缘膜通过注入有机半导体膜材料 由于对孔径的毛细作用而进入孔径。 形成在特定点的绝缘膜能够形成具有高可控性的有机半导体膜。 此外，绝缘膜也可以用作保持孔的间隔物，即基板之间的间隔（间隙）。

公开(公告)号：US07626196B2

公开(公告)日：2009-12-01

申请号：US10978399

申请日：2004-11-02

申请人： Yoshiharu Hirakata ,  Tetsuji Ishitani ,  Shuji Fukai ,  Ryoto Imahayashi

发明人： Yoshiharu Hirakata ,  Tetsuji Ishitani ,  Shuji Fukai ,  Ryoto Imahayashi

IPC分类号： H01L25/34

CPC分类号： H01L51/0545 ,  H01L51/0003 ,  H01L51/0037

摘要： There have been problems in that a dedicated apparatus is needed for a conventional method of manufacturing an organic thin film transistor and in that: a little amount of an organic semiconductor film is formed with respect to a usage amount of a material; and most of the used material is discarded. Further, apparatus maintenance such as cleaning of the inside of an apparatus cup or chamber has needed to be frequently carried out in order to remove the contamination resulting from the material that is wastefully discarded. Therefore, a great cost for materials and man-hours for maintenance of apparatus have been required. In the present invention, a uniform organic semiconductor film is formed by forming an aperture between a first substrate for forming the organic semiconductor film and a second substrate used for injection with an insulating film formed at a specific spot and by injecting an organic semiconductor film material into the aperture due to capillarity to the aperture. The insulating film formed at the specific spot enables formation of the organic semiconductor film with high controllability. Further, the insulating film can also serve as a spacer that holds the aperture, that is, an interval (gap) between the substrates.

摘要翻译： 存在的问题在于，制造有机薄膜晶体管的常规方法需要专用设备，并且其中：相对于材料的使用量形成少量的有机半导体膜; 大部分废旧材料被丢弃。 此外，需要频繁地进行设备维护，例如清洁装置杯或室的内部，以便去除由废弃材料造成的污染。 因此，需要维护设备的材料和工时的巨大成本。 在本发明中，通过在用于形成有机半导体膜的第一基板和用于注入的第二基板之间形成孔，形成均匀的有机半导体膜，所述第二基板在形成于特定点处的绝缘膜通过注入有机半导体膜材料 由于对孔径的毛细作用而进入孔径。 形成在特定点的绝缘膜能够形成具有高可控性的有机半导体膜。 此外，绝缘膜也可以用作保持孔的间隔物，即基板之间的间隔（间隙）。

公开(公告)号：US20050139823A1

公开(公告)日：2005-06-30

申请号：US11011027

申请日：2004-12-15

申请人： Yoshiharu Hirakata ,  Tetsuji Ishitani ,  Shuji Fukai ,  Ryota Imahayashi

发明人： Yoshiharu Hirakata ,  Tetsuji Ishitani ,  Shuji Fukai ,  Ryota Imahayashi

IPC分类号： H01L29/786 ,  H01L21/00 ,  H01L51/00 ,  H01L51/30 ,  H01L51/40 ,  H01L29/08 ,  H01L29/10

CPC分类号： B82Y10/00 ,  H01L51/0024 ,  H01L51/0034 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/0038 ,  H01L51/0041 ,  H01L51/0051 ,  H01L51/0053 ,  H01L51/0093 ,  H01L51/0545

摘要： It is an object of the present invention to provide a method for manufacturing an inexpensive organic TFT which does not depend on an expensive dedicated device and does not expose an organic semiconductor to atmospheric air. Moreover, it is another object of the present invention to provide a method for manufacturing an organic TFT at low temperature so as not to cause a problem of pyrolyzing a material. In view of the foregoing problems, one feature of the present invention is that a film-like protector which serves as a protective film is provided over an organic semiconductor film. The film-like protector can be formed by being fixed to a film-like support body with an adhesive agent or the like.

摘要翻译： 本发明的目的是提供一种不依赖于昂贵的专用装置并且不将有机半导体暴露于大气中的便宜的有机TFT的制造方法。 此外，本发明的另一个目的是提供一种在低温下制造有机TFT的方法，从而不会引起材料的热解问题。 鉴于上述问题，本发明的一个特征是在有机半导体膜上设置用作保护膜的膜状保护膜。 膜状保护器可以通过用粘合剂等固定到膜状支撑体上而形成。

公开(公告)号：US07985967B2

公开(公告)日：2011-07-26

申请号：US12605537

申请日：2009-10-26

申请人： Yoshiharu Hirakata ,  Tetsuji Ishitani ,  Shuji Fukai ,  Ryota Imahayashi

发明人： Yoshiharu Hirakata ,  Tetsuji Ishitani ,  Shuji Fukai ,  Ryota Imahayashi

IPC分类号： H01L51/10

CPC分类号： H01L51/0545 ,  H01L51/0003 ,  H01L51/0037

摘要： There have been problems in that a dedicated apparatus is needed for a conventional method of manufacturing an organic thin film transistor and in that: a little amount of an organic semiconductor film is formed with respect to a usage amount of a material; and most of the used material is discarded. Further, apparatus maintenance such as cleaning of the inside of an apparatus cup or chamber has needed to be frequently carried out in order to remove the contamination resulting from the material that is wastefully discarded. Therefore, a great cost for materials and man-hours for maintenance of apparatus have been required. In the present invention, a uniform organic semiconductor film is formed by forming an aperture between a first substrate for forming the organic semiconductor film and a second substrate used for injection with an insulating film formed at a specific spot and by injecting an organic semiconductor film material into the aperture due to capillarity to the aperture. The insulating film formed at the specific spot enables formation of the organic semiconductor film with high controllability. Further, the insulating film can also serve as a spacer that holds the aperture, that is, an interval (gap) between the substrates.

摘要翻译： 存在的问题在于，制造有机薄膜晶体管的常规方法需要专用设备，并且其中：相对于材料的使用量形成少量的有机半导体膜; 大部分废旧材料被丢弃。 此外，需要频繁地进行设备维护，例如清洁装置杯或室的内部，以便去除由废弃材料造成的污染。 因此，需要维护设备的材料和工时的巨大成本。 在本发明中，通过在用于形成有机半导体膜的第一基板和用于注入的第二基板之间形成孔，形成均匀的有机半导体膜，所述第二基板在形成于特定点处的绝缘膜通过注入有机半导体膜材料 由于对孔径的毛细作用而进入孔径。 形成在特定点的绝缘膜能够形成具有高可控性的有机半导体膜。 此外，绝缘膜也可以用作保持孔的间隔物，即基板之间的间隔（间隙）。

公开(公告)号：US20090209069A1

公开(公告)日：2009-08-20

申请号：US12431168

申请日：2009-04-28

申请人： Yoshiharu Hirakata ,  Tetsuji Ishitani ,  Shuji Fukai ,  Ryota Imahayashi

发明人： Yoshiharu Hirakata ,  Tetsuji Ishitani ,  Shuji Fukai ,  Ryota Imahayashi

IPC分类号： H01L21/336

CPC分类号： B82Y10/00 ,  H01L51/0024 ,  H01L51/0034 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/0038 ,  H01L51/0041 ,  H01L51/0051 ,  H01L51/0053 ,  H01L51/0093 ,  H01L51/0545

摘要： It is an object of the present invention to provide a method for manufacturing an inexpensive organic TFT which does not depend on an expensive dedicated device and does not expose an organic semiconductor to atmospheric air. Moreover, it is another object of the present invention to provide a method for manufacturing an organic TFT at low temperature so as not to cause a problem of pyrolyzing a material. In view of the foregoing problems, one feature of the present invention is that a film-like protector which serves as a protective film is provided over an organic semiconductor film. The film-like protector can be formed by being fixed to a film-like support body with an adhesive agent or the like.

摘要翻译： 本发明的目的是提供一种不依赖于昂贵的专用装置并且不将有机半导体暴露于大气中的便宜的有机TFT的制造方法。 此外，本发明的另一个目的是提供一种在低温下制造有机TFT的方法，从而不会引起材料的热解问题。 鉴于上述问题，本发明的一个特征是在有机半导体膜上设置用作保护膜的膜状保护膜。 膜状保护器可以通过用粘合剂等固定到膜状支撑体上而形成。