公开(公告)号：US07838912B2

公开(公告)日：2010-11-23

申请号：US11660514

申请日：2005-03-11

申请人： Daisuke Niwa ,  Ichiro Koiwa ,  Tetsuya Osaka

发明人： Daisuke Niwa ,  Ichiro Koiwa ,  Tetsuya Osaka

IPC分类号： C12Q1/00

CPC分类号： G01N27/414

摘要： A semiconductor sensing field effect transistor uses an organic unimolecular film formed on a gate insulating layer. In the semiconductor sensing field effect transistor and a semiconductor sensing device, the gate insulating layer has a stack structure wherein a second silicon oxide layer is stacked on a first silicon oxide layer through a silicon nitride layer. A semiconductor sensor chip and the semiconductor sensing device are provided with a field effect transistor chip wherein the gate insulating layer, a source electrode and a drain electrode are integrated on a silicon board, a source electrode terminal wiring connected with the source electrode, and a drain electrode terminal wiring connected with the drain electrode. In the semiconductor sensor chip and the semiconductor sensing device, the transistor chip, the source electrode terminal wiring and the drain electrode terminal wiring are sealed so as to expose an edge part which is not connected with the gate insulating layer of the transistor chip and the source electrode of the source electrode terminal wiring, and an edge part which is not connected with the drain electrode of the drain electrode terminal wiring.

摘要翻译： 半导体感测场效应晶体管使用形成在栅极绝缘层上的有机单分子膜。 在半导体感测场效应晶体管和半导体感测装置中，栅极绝缘层具有堆叠结构，其中第二氧化硅层通过氮化硅层堆叠在第一氧化硅层上。 半导体传感器芯片和半导体感测装置设置有场效应晶体管芯片，其中栅极绝缘层，源电极和漏电极集成在硅板上，源极端子布线与源极连接，以及 漏极端子布线与漏电极连接。 在半导体传感器芯片和半导体感测装置中，晶体管芯片，源极端子布线和漏极端子布线被密封，以暴露未与晶体管芯片的栅极绝缘层连接的边缘部分和 源电极端子配线的源电极以及未与漏电极端子配线的漏电极连接的边缘部。

公开(公告)号：US20080012049A1

公开(公告)日：2008-01-17

申请号：US11660514

申请日：2005-03-11

申请人： Daisuke Niwa ,  Tetsuya Osaka

发明人： Daisuke Niwa ,  Tetsuya Osaka

IPC分类号： H01L29/78

CPC分类号： G01N27/414

摘要： A semiconductor sensing field effect transistor uses an organic unimolecular film formed on a gate insulating layer. In the semiconductor sensing field effect transistor and a semiconductor sensing device, the gate insulating layer has a stack structure wherein a second silicon oxide layer is stacked on a first silicon oxide layer through a silicon nitride layer. A semiconductor sensor chip and the semiconductor sensing device are provided with a field effect transistor chip wherein the gate insulating layer, a source electrode and a drain electrode are integrated on a silicon board, a source electrode terminal wiring connected with the source electrode, and a drain electrode terminal wiring connected with the drain electrode. In the semiconductor sensor chip and the semiconductor sensing device, the transistor chip, the source electrode terminal wiring and the drain electrode terminal wiring are sealed so as to expose an edge part which is not connected with the gate insulating layer of the transistor chip and the source electrode of the source electrode terminal wiring, and an edge part which is not connected with the drain electrode of the drain electrode terminal wiring.

摘要翻译： 半导体感测场效应晶体管使用形成在栅极绝缘层上的有机单分子膜。 在半导体感测场效应晶体管和半导体感测装置中，栅极绝缘层具有堆叠结构，其中第二氧化硅层通过氮化硅层堆叠在第一氧化硅层上。 半导体传感器芯片和半导体感测装置设置有场效应晶体管芯片，其中栅极绝缘层，源电极和漏电极集成在硅板上，源极端子布线与源极连接，以及 漏极端子布线与漏电极连接。 在半导体传感器芯片和半导体感测装置中，晶体管芯片，源极端子布线和漏极端子布线被密封，以暴露未与晶体管芯片的栅极绝缘层连接的边缘部分和 源电极端子配线的源电极以及未与漏电极端子配线的漏电极连接的边缘部。

公开(公告)号：US20070207471A1

公开(公告)日：2007-09-06

申请号：US11514843

申请日：2006-09-05

申请人： Tetsuya Osaka ,  Daisuke Niwa ,  Norikazu Motohashi

发明人： Tetsuya Osaka ,  Daisuke Niwa ,  Norikazu Motohashi

IPC分类号： C12Q1/68 ,  C12M3/00 ,  H01L51/00

CPC分类号： G01N27/4145 ,  Y10T436/143333

摘要： A semiconductor DNA sensing device having a detection section is provided. The detection section comprises a structure of a probe DNA/a first organic monolayer/an insulating layer/a semiconductor. The field-effect transistor (FET) comprises a semiconductor substrate and a first insulator layer formed thereon as a reactive gate insulator, and the first insulating layer comprises silicon oxide or an inorganic oxide. The first organic monolayer formed on the first insulator layer comprises an organic molecule having a reactive functional group. The probe DNA contains 3 to 35 nucleotides, and this probe DNA is bonded to the first organic monolayer by the reactive functional group either directly or by an intervening crosslinker. The semiconductor DNA sensing device of the present invention is extremely effective as an on-chip, high-sensitivity, micro multi-DNA sensing device, and an integrated device produced by using such semiconductor DNA sensing device is capable of sensing a DNA including a mismatch sequence such as single nucleotide polymorphism, and such device is indispensable for an advanced medicine and personalized medicine.

摘要翻译： 提供了具有检测部的半导体DNA感测装置。 检测部分包括探针DNA /第一有机单层/绝缘层/半导体的结构。 场效应晶体管（FET）包括半导体衬底和形成在其上的第一绝缘体层作为反应性栅极绝缘体，并且第一绝缘层包括氧化硅或无机氧化物。 形成在第一绝缘体层上的第一有机单层包含具有反应性官能团的有机分子。 探针DNA含有3至35个核苷酸，该探针DNA直接或通过中间交联剂通过反应性官能团与第一有机单层结合。 本发明的半导体DNA感测装置作为片上，高灵敏度的微多DNA感测装置是非常有效的，并且通过使用这种半导体DNA感测装置制造的集成装置能够感测包括不匹配的DNA 序列如单核苷酸多态性，这种装置对先进药物和个性化药物是必不可少的。

公开(公告)号：US20100221841A1

公开(公告)日：2010-09-02

申请号：US12717074

申请日：2010-03-03

申请人： Tetsuya OSAKA ,  Daisuke Niwa ,  Norikazu Motohashi

发明人： Tetsuya OSAKA ,  Daisuke Niwa ,  Norikazu Motohashi

IPC分类号： G01N33/50

CPC分类号： G01N27/4145 ,  Y10T436/143333

摘要： A semiconductor DNA sensing device is provided herein, which includes a detection section with a field-effect transistor including a semiconductor substrate and a first insulator layer formed thereon as a reactive gate insulator, the first insulating layer including silicon oxide or an inorganic oxide, a first organic monolayer formed on the first insulator layer, the first organic monolayer comprising an organic molecule having a reactive functional group, and a probe DNA containing 3 to 35 nucleotides bonded to the first organic monolayer by the reactive functional group either directly or by an intervening crosslinker, the structure of the probe DNA/the first organic monolayer/the insulating layer/the semiconductor constituting the detection section.

摘要翻译： 本文提供了一种半导体DNA感测装置，其包括具有场效应晶体管的检测部分，该场效应晶体管包括半导体衬底和形成在其上的作为反应栅极绝缘体的第一绝缘体层，所述第一绝缘层包括氧化硅或无机氧化物， 形成在第一绝缘体层上的第一有机单层，包含具有反应性官能团的有机分子的第一有机单层和通过反应性官能团与第一有机单层结合的3至35个核苷酸的探针DNA直接或通过介入 交联剂，探针DNA /第一有机单层/构成检测部分的绝缘层/半导体的结构。

公开(公告)号：US09113793B2

公开(公告)日：2015-08-25

申请号：US13295241

申请日：2011-11-14

申请人： Koji Terumoto ,  Daisuke Niwa ,  Tsuyoshi Satomi ,  Kazuhiro Oguchi

发明人： Koji Terumoto ,  Daisuke Niwa ,  Tsuyoshi Satomi ,  Kazuhiro Oguchi

IPC分类号： A61B5/02 ,  A61B5/024 ,  A61B5/1455 ,  A61B5/00

CPC分类号： A61B5/02427 ,  A61B5/02007 ,  A61B5/02405 ,  A61B5/14552 ,  A61B5/4815 ,  A61B5/6803 ,  A61B5/681 ,  A61B5/6814 ,  A61B5/6826 ,  A61B2562/0219 ,  A61B2562/0233 ,  A61B2562/0238 ,  A61B2562/0247 ,  A61B2562/185

摘要： Among the technical characteristics disclosed in this specification, the pulse wave sensor with one of the technical characteristic includes a construction to detect the pulse wave at a wrist (i.e., a construction to measure the pulse wave to be worn at the wrist). To be more concrete, the pulse wave sensor includes a measurement unit to measure the pulse wave, a power source unit to supply power to the measurement unit, a cable to connect between the measurement unit and the power source unit electrically, and a armlet type housing to contain the measurement unit, the power source unit, and the cable.

摘要翻译： 在本说明书中公开的技术特征中，具有技术特征之一的脉搏波传感器包括检测手腕上的脉搏波（即测量手腕上佩戴的脉搏波的结构）的结构。 更具体地说，脉搏波传感器包括测量脉搏波的测量单元，向测量单元供电的电源单元，电测量单元和电源单元之间连接的电缆，以及手臂型 外壳容纳测量单元，电源单元和电缆。

公开(公告)号：US20090066962A1

公开(公告)日：2009-03-12

申请号：US12206022

申请日：2008-09-08

申请人： Daisuke Niwa ,  Dai Ohnishi

发明人： Daisuke Niwa ,  Dai Ohnishi

IPC分类号： G01N21/55

CPC分类号： G01N21/553 ,  G01N21/554 ,  G01N21/7703

摘要： The present invention relates to a surface plasmon resonance sensor which has a first dielectric layer, a metal layer disposed on the first dielectric layer, and a second dielectric layer covering the metal layer. The surface plasmon resonance sensor includes: a sensor main body provided with an opening for exposing a part of a surface of the metal layer on a side facing the second dielectric layer, and for allowing a measurement sample to be brought into contact with this surface; a light source for introducing a beam into the metal layer from one end of the metal layer in a longitudinal direction of the metal layer; and a detection unit detecting a beam emitted from the other end of the metal layer, has high sensitivity in measurement, is downsized, and is usable in a simple manner.

摘要翻译： 表面等离子体共振传感器本发明涉及一种表面等离子体共振传感器，其具有第一电介质层，设置在第一电介质层上的金属层和覆盖该金属层的第二电介质层。 所述表面等离子体共振传感器包括：传感器主体，其设置有用于暴露所述金属层的面对所述第二介电层的一侧表面的一部分的开口，并且用于使所述测量样品与所述表面接触; 用于从所述金属层的所述金属层的纵向方向的一端引入光束到所述金属层的光源; 检测从金属层的另一端发射的光束的检测单元，测量灵敏度高，尺寸小，可以简单的使用。

公开(公告)号：US20120021932A1

公开(公告)日：2012-01-26

申请号：US13015851

申请日：2011-01-28

申请人： Andreas Mershin ,  Brian Cook ,  Liselotte Kaiser ,  Johanna F. Bikker ,  Yoshikatsu Miura ,  Daisuke Niwa ,  Dai Ohnishi ,  Atsushi Tazuke ,  Shuguang Zhang

发明人： Andreas Mershin ,  Brian Cook ,  Liselotte Kaiser ,  Johanna F. Bikker ,  Yoshikatsu Miura ,  Daisuke Niwa ,  Dai Ohnishi ,  Atsushi Tazuke ,  Shuguang Zhang

IPC分类号： C40B30/04 ,  C40B40/10 ,  G01N21/75 ,  G01N21/55 ,  G01N24/08

CPC分类号： G01N21/553 ,  B82Y30/00 ,  C07K2/00 ,  G01N21/554 ,  G01N33/0031 ,  G01N2201/06113 ,  G01N2201/08

摘要： The invention provides a bio-sensing nanodevice comprising: a stabilized G-protein coupled receptor on a support, a real time receptor-ligand binding detection method, a test composition delivery system and a test composition recognition program. The G-protein coupled receptor can be stabilized using surfactant peptide. The nanodevice provides a greater surface area for better precision and sensitivity to odorant detection. The invention further provides a microfluidic chip containing a stabilized G-protein coupled receptor immobilized on a support, and arranged in at least two dimensional microarray system. The invention also provides a method of delivering odorant comprising the step of manipulating the bubbles in complex microfluidic networks wherein the bubbles travel in a microfluidic channel carrying a variety of gas samples to a precise location on a chip. The invention further provides method of fabricating hOR17-4 olfactory receptor.

摘要翻译： 本发明提供了一种生物感测纳米装置，其包括：载体上的稳定的G-蛋白偶联受体，实时受体 - 配体结合检测方法，测试组合物递送系统和测试组合物识别程序。 G蛋白偶联受体可以使用表面活性肽稳定。 纳米器件提供更大的表面积，以提高气味检测的精度和灵敏度。 本发明进一步提供了一种微流控芯片，其含有固定在载体上的稳定化的G蛋白偶联受体，并且被布置在至少二维微阵列系统中。 本发明还提供了一种递送加臭剂的方法，其包括在复杂微流体网络中操作气泡的步骤，其中气泡在携带各种气体样品的微流体通道中移动到芯片上的精确位置。 本发明还提供了制备hOR17-4嗅觉受体的方法。

公开(公告)号：US20120016245A1

公开(公告)日：2012-01-19

申请号：US13181950

申请日：2011-07-13

申请人： Daisuke Niwa ,  Koji Terumoto ,  Kazuhiro Oguchi ,  Tsuyoshi Satomi

发明人： Daisuke Niwa ,  Koji Terumoto ,  Kazuhiro Oguchi ,  Tsuyoshi Satomi

IPC分类号： A61B6/00

CPC分类号： A61B5/6826 ,  A61B5/02007 ,  A61B5/02427 ,  A61B5/14552

摘要： The plethysmogram sensor disclosed in this specification includes a light emitting portion whose output is variable, a light receiving portion to detect a light emitted from the light emitting portion and penetrates a living body of a measured person, and a processing unit to acquire information about the plethysmogram of the measured person based on a measured value provided from the light receiving portion.

摘要翻译： 本说明书中公开的体积描记传感器包括输出可变的发光部，检测从发光部射出的光并穿透被测人的生物的光接收部，以及处理部， 基于从光接收部提供的测量值来测量的人的体积描记图。

公开(公告)号：US07671996B2

公开(公告)日：2010-03-02

申请号：US12206022

申请日：2008-09-08

申请人： Daisuke Niwa ,  Dai Ohnishi

发明人： Daisuke Niwa ,  Dai Ohnishi

IPC分类号： G01N21/00

CPC分类号： G01N21/553 ,  G01N21/554 ,  G01N21/7703

摘要： The present invention relates to a surface plasmon resonance sensor which has a first dielectric layer, a metal layer disposed on the first dielectric layer, and a second dielectric layer covering the metal layer. The surface plasmon resonance sensor includes: a sensor main body provided with an opening for exposing a part of a surface of the metal layer on a side facing the second dielectric layer, and for allowing a measurement sample to be brought into contact with this surface; a light source for introducing a beam into the metal layer from one end of the metal layer in a longitudinal direction of the metal layer; and a detection unit detecting a beam emitted from the other end of the metal layer, has high sensitivity in measurement, is downsized, and is usable in a simple manner.

摘要翻译： 表面等离子体共振传感器本发明涉及一种表面等离子体共振传感器，其具有第一电介质层，设置在第一电介质层上的金属层和覆盖该金属层的第二电介质层。 所述表面等离子体共振传感器包括：传感器主体，其设置有用于暴露所述金属层的面对所述第二介电层的一侧表面的一部分的开口，并且用于使所述测量样品与所述表面接触; 用于从所述金属层的所述金属层的纵向方向的一端引入光束到所述金属层的光源; 检测从金属层的另一端发射的光束的检测单元，测量灵敏度高，尺寸小，可以简单的使用。

公开(公告)号：US08358880B2

公开(公告)日：2013-01-22

申请号：US12639549

申请日：2009-12-16

申请人： Fang Liu ,  Rui-Yuan Wan ,  Yi-Dong Huang ,  Xue Feng ,  Wei Zhang ,  Jiang De Peng ,  Yoshikatsu Miura ,  Daisuke Niwa ,  Dai Ohnishi

发明人： Fang Liu ,  Rui-Yuan Wan ,  Yi-Dong Huang ,  Xue Feng ,  Wei Zhang ,  Jiang De Peng ,  Yoshikatsu Miura ,  Daisuke Niwa ,  Dai Ohnishi

IPC分类号： G02F1/035

CPC分类号： G01N21/553 ,  B82Y20/00 ,  G01N21/43 ,  G01N21/7703 ,  G02B6/1226 ,  G02F1/035 ,  G02F2001/0144 ,  G02F2203/10

摘要： The present invention provides a hybrid coupling structure of a short range surface plasmon polariton and a conventional dielectric waveguide, including a dielectric substrate layer, a dielectric waveguide layer positioned on the said dielectric substrate layer, a coupling matching layer positioned on the said dielectric waveguide layer and a short range surface plasmon waveguide portion, formed on the said coupling matching layer, for conducting the short range surface plasmon polariton. The present invention also provides a coupling structure of a long range surface plasmon polariton and a dielectric waveguide, including a dielectric substrate layer, a dielectric waveguide layer, a coupling matching layer and a long range surface plasmon waveguide portion upward from below respectively.

摘要翻译： 本发明提供了一种短距离表面等离子体激元和传统电介质波导的混合耦合结构，包括电介质基底层，位于所述电介质基底层上的电介质波导层，位于所述电介质波导层上的耦合匹配层 以及形成在所述耦合匹配层上的用于传导短距离表面等离子体激元的短距离表面等离子体波导部分。 本发明还提供了一种远距离表面等离子体激元和介质波导的耦合结构，其中包括电介质基底层，电介质波导层，耦合匹配层和远距离表面等离子体激元波导部分。