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    Substrate support shield in wafer processing reactors
    1.
    发明授权
    Substrate support shield in wafer processing reactors 失效
    晶圆处理反应器中的基板支撑屏蔽

    公开(公告)号：US5855687A

    公开(公告)日：1999-01-05

    申请号：US326506

    申请日：1994-10-20

    申请人： Dale R. DuBois ,  Alan F. Morrison ,  Richard A. Marsh ,  Mei Chang

    发明人： Dale R. DuBois ,  Alan F. Morrison ,  Richard A. Marsh ,  Mei Chang

    IPC分类号： C23C16/44 ,  C23C16/04 ,  C23C16/455 ,  C23C16/458 ,  H01L21/205 ,  H01L21/285 ,  H01L21/683 ,  H01L21/687 ,  C23C16/00 ,  C23C14/00 ,  C23F1/00 ,  H01L21/00

    CPC分类号： C23C16/45521 ,  C23C16/04 ,  C23C16/042 ,  C23C16/4585 ,  H01L21/68735

    摘要： Apparatus for CVD processing wherein a wafer mounted on a vertically movable susceptor beneath a showerhead. The susceptor extends beyond the outer perimeter of the wafer such that, when the susceptor is raised into contact with a shield ring which normally rests on a ring support in the chamber, the shield ring engages outer portion of the susceptor beyond the perimeter of the wafer, lifting the shield ring off its support. The shield ring shields the edge of the top surface of the susceptor during the deposition, whereby unwanted deposition on the susceptor is prevented while, at the same time, allowing for deposition over the entire upper surface of the wafer. To center the shield ring and the susceptor with respect to each other, the shield ring may include a plurality of centering protrusions, at least some of which engage the susceptor as it moves upwards to lift the shield ring off its supports in the chamber.

    摘要翻译： 用于CVD处理的装置，其中安装在淋浴喷头下方的垂直移动的基座上的晶片。 感受体延伸超过晶片的外周边，使得当基座升高成与通常位于室中的环支撑件上的屏蔽环接触时，屏蔽环接合基座的外部部分超过晶片的周边 将护盾环从支架上取下。 屏蔽环在沉积期间屏蔽基座的顶表面的边缘，由此防止基座上的不希望的沉积，同时允许沉积在晶片的整个上表面上。 为了将屏蔽环和基座相对于彼此定位，屏蔽环可以包括多个定心突起，当其向上移动以将屏蔽环从腔室中的支撑件提升时，至少一些定心突起接合基座。

    Method for constructing a film on a semiconductor wafer
    2.
    发明授权
    Method for constructing a film on a semiconductor wafer 失效
    在半导体晶片上构造膜的方法

    公开(公告)号：US06699530B2

    公开(公告)日：2004-03-02

    申请号：US08808246

    申请日：1997-02-28

    申请人： Michal Danek ,  Marvin Liao ,  Eric Englhardt ,  Mei Chang ,  Yeh-Jen Kao ,  Dale R. DuBois ,  Alan F. Morrison

    发明人： Michal Danek ,  Marvin Liao ,  Eric Englhardt ,  Mei Chang ,  Yeh-Jen Kao ,  Dale R. DuBois ,  Alan F. Morrison

    IPC分类号： B05D306

    CPC分类号： C23C16/45565 ,  C23C16/34 ,  C23C16/4408 ,  C23C16/4581 ,  C23C16/4586 ,  C23C16/481 ,  C23C16/5096 ,  C23C16/56 ,  H01J37/32174 ,  H01J2237/2001 ,  H01J2237/336 ,  H01L21/28512 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76864

    摘要： The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of material is annealed. Once the annealing is completed, the material may be oxidized. Alternatively, the material may be exposed to a silicon gas once the annealing is completed. The deposition, annealing, and either oxidation or silicon gas exposure may all be carried out in the same chamber, without need for removing the wafer from the chamber until all three steps are completed. A semiconductor wafer processing chamber for carrying out such an in-situ construction may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber. The rf signal means is coupled to the showerhead and the wafer support for providing a first rf signal to the showerhead and a second rf signal to the wafer support.

    摘要翻译： 放置在处理室中的晶片上的膜的构造可以通过以下步骤进行。 在晶片上沉积一层材料。 接下来，将材料层退火。 一旦退火完成，材料可能被氧化。 或者，一旦退火完成，材料可能暴露于硅气体。 沉积，退火和氧化或硅气体暴露都可以在相同的室中进行，而不需要从腔室中移除晶片，直到完成所有三个步骤。 用于进行这种原位结构的半导体晶片处理室可以包括处理室，喷头，晶片支架和射频信号装置。 淋浴头将气体供应到处理室中，而晶片支撑件在处理室中支撑晶片。 rf信号装置耦合到喷头和晶片支架，用于向喷头提供第一rf信号，并将第二rf信号耦合到晶片支架。

    Compound clamp ring for semiconductor wafers
    5.
    发明授权
    Compound clamp ring for semiconductor wafers 失效
    用于半导体晶片的复合夹环

    公开(公告)号：US5421401A

    公开(公告)日：1995-06-06

    申请号：US187231

    申请日：1994-01-25

    申请人： Semyon Sherstinsky ,  Mei Chang ,  Charles C. Harris ,  Alan F. Morrison ,  Virendra V. S. Rana ,  James F. Roberts ,  Ashok K. Sinha ,  Simon Tam

    发明人： Semyon Sherstinsky ,  Mei Chang ,  Charles C. Harris ,  Alan F. Morrison ,  Virendra V. S. Rana ,  James F. Roberts ,  Ashok K. Sinha ,  Simon Tam

    IPC分类号： C23C14/50 ,  C23C16/458 ,  H01L21/687 ,  F28F7/00 ,  C23C16/00

    CPC分类号： H01L21/68721 ,  C23C14/50 ,  C23C16/4585 ,  Y10S269/903

    摘要： A compound clamp ring secures a semiconductor wafer having a wafer flat portion to a wafer pedestal during wafer processing while maintaining a continuous seal between the wafer edges and the wafer pedestal to prevent leakage of coolant gases circulated at the backside of the wafer into the process environment. The clamp ring has an annular wafer clamp surface adapted to press a round portion of the wafer into sealing abutment with the wafer pedestal. A cavity formed in the clamp ring securely receives a comb-like array of resilient flexures that are adapted to apply a yieldable bias to the flat portion of the wafer to complete the seal between the wafer and the pedestal at the flat portion of the wafer; and encloses the flexures to shield the flexures from process gases.

    摘要翻译： 复合夹环在晶片处理期间将具有晶片平坦部分的半导体晶片固定到晶片基座，同时保持晶片边缘和晶片基座之间的连续密封，以防止在晶片背面循环的冷却剂气体泄漏到工艺环境中 。 夹紧环具有适于将晶圆的圆形部分压紧到与晶片基座密封抵接的环形晶片夹紧表面。 形成在夹紧环中的空腔牢固地容纳弹性挠曲的梳状阵列，其适于对晶片的平坦部分施加可屈服的偏压，以在晶片的平坦部分处完成晶片和基座之间的密封; 并包围挠曲件以将工件气体的挠曲屏蔽。

    Support assembly
    7.
    发明授权
    Support assembly 有权

    公开(公告)号：US10593539B2

    公开(公告)日：2020-03-17

    申请号：US13457421

    申请日：2012-04-26

    申请人： Chien-Teh Kao ,  Joel M. Huston ,  Mei Chang ,  Xiaoxiong (John) Yuan

    发明人： Chien-Teh Kao ,  Joel M. Huston ,  Mei Chang ,  Xiaoxiong (John) Yuan

    IPC分类号： B23K10/00 ,  H01L21/02 ,  H01J37/32 ,  H01L21/67 ,  C23C14/54 ,  C23C14/50 ,  C23C14/02

    摘要： A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the apparatus comprises a support assembly. In one embodiment, the support assembly includes a shaft coupled to a disk-shaped body. The disk-shaped body includes an upper surface, a lower surface and a cylindrical outer surface. A flange extends radially outward from the cylindrical outer surface. A fluid channel is formed in the disk-shaped body and is coupled to the heat transfer fluid conduit of the shaft. A plurality of grooves formed in the upper surface are coupled by a hole to the vacuum conduit of the shaft. A gas conduit formed through the disk-shaped body couples the gas conduit of the shaft to the cylindrical outer surface of the disk-shaped body.

    Method for tuning a deposition rate during an atomic layer deposition process
    8.
    发明授权
    Method for tuning a deposition rate during an atomic layer deposition process 有权
    在原子层沉积过程中调整沉积速率的方法

    公开(公告)号：US09418890B2

    公开(公告)日：2016-08-16

    申请号：US14279260

    申请日：2014-05-15

    申请人： Paul Ma ,  Joseph F. Aubuchon ,  Jiang Lu ,  Mei Chang

    发明人： Paul Ma ,  Joseph F. Aubuchon ,  Jiang Lu ,  Mei Chang

    IPC分类号： H01L21/768 ,  C23C16/455 ,  C23C16/52

    CPC分类号： H01L21/76841 ,  C23C16/45534 ,  C23C16/52

    摘要： Embodiments of the invention provide methods for depositing a material on a substrate within a processing chamber during a vapor deposition process, such as an atomic layer deposition (ALD) process. In one embodiment, a method is provided which includes sequentially exposing the substrate to a first precursor gas and at least a second precursor gas while depositing a material on the substrate during the ALD process, and continuously or periodically exposing the substrate to a treatment gas prior to and/or during the ALD process. The deposition rate of the material being deposited may be controlled by varying the amount of treatment gas exposed to the substrate. In one example, tantalum nitride is deposited on the substrate and the alkylamino metal precursor gas contains a tantalum precursor, such as pentakis(dimethylamino) tantalum (PDMAT), the second precursor gas contains a nitrogen precursor, such as ammonia, and the treatment gas contains dimethylamine (DMA).

    摘要翻译： 本发明的实施例提供了在诸如原子层沉积（ALD）工艺的气相沉积工艺期间将材料沉积在处理室内的衬底上的方法。 在一个实施例中，提供了一种方法，其包括在ALD工艺期间将衬底沉积到衬底上的同时将衬底依次暴露于第一前体气体和至少第二前体气体，并且连续地或周期地将衬底暴露于处理气体之前 到和/或在ALD过程期间。 可以通过改变暴露于衬底的处理气体的量来控制被沉积的材料的沉积速率。 在一个实例中，氮化钽沉积在衬底上，并且烷基氨基金属前体气体包含钽前体，例如五（二甲基氨基）钽（PDMAT）），第二前体气体含有氮前体如氨，并且处理气体 含有二甲胺（DMA）。

    Contact clean by remote plasma and repair of silicide surface
    9.
    发明授权
    Contact clean by remote plasma and repair of silicide surface 有权
    通过远程等离子体接触清洁并修复硅化物表面

    公开(公告)号：US09147578B2

    公开(公告)日：2015-09-29

    申请号：US13004740

    申请日：2011-01-11

    申请人： Xinliang Lu ,  Chien-Teh Kao ,  Chiukin Steve Lai ,  Mei Chang

    发明人： Xinliang Lu ,  Chien-Teh Kao ,  Chiukin Steve Lai ,  Mei Chang

    IPC分类号： H01L21/00 ,  H01L21/285 ,  H01L21/02 ,  H01L21/28 ,  H01L21/321 ,  H01L29/66

    CPC分类号： H01L21/28518 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/28061 ,  H01L21/321 ,  H01L29/665 ,  H01L29/6659 ,  Y10S438/906

    摘要： Embodiments provide methods for treating a metal silicide contact which includes positioning a substrate having an oxide layer disposed on a metal silicide contact surface within a processing chamber, cleaning the metal silicide contact surface to remove the oxide layer while forming a cleaned silicide contact surface during a cleaning process, and exposing the cleaned silicide contact surface to a silicon-containing compound to form a recovered silicide contact surface during a regeneration process. In some examples, the cleaning of the metal silicide contact surface includes cooling the substrate to an initial temperature of less than 65° C., forming reactive species from a gas mixture of ammonia and nitrogen trifluoride by igniting a plasma, exposing the oxide layer to the reactive species to form a thin film, and heating the substrate to about 100° C. or greater to remove the thin film from the substrate while forming the cleaned silicide contact surface.

    摘要翻译： 实施例提供了处理金属硅化物接触的方法，其包括将具有设置在处理室内的金属硅化物接触表面上的氧化物层的衬底定位，在金属硅化物接触表面中清洁金属硅化物接触表面以除去氧化物层同时形成清洁的硅化物接触表面 清洁工艺，以及将清洁的硅化物接触表面暴露于含硅化合物，以在再生过程中形成回收的硅化物接触表面。 在一些实例中，金属硅化物接触表面的清洁包括将衬底冷却至低于65℃的初始温度，通过点燃等离子体从氨和三氟化氮的气体混合物形成反应物质，将氧化物层暴露于 反应性物质形成薄膜，并将衬底加热至约100℃或更高以在形成清洁的硅化物接触表面的同时从衬底移除薄膜。

    Process for forming cobalt-containing materials
    10.
    发明授权
    Process for forming cobalt-containing materials 有权
    用于形成含钴材料的方法

    公开(公告)号：US08815724B2

    公开(公告)日：2014-08-26

    申请号：US13452237

    申请日：2012-04-20

    申请人： Seshadri Ganguli ,  Schubert S. Chu ,  Mei Chang ,  Sang-ho Yu ,  Kevin Moraes ,  See-Eng Phan

    发明人： Seshadri Ganguli ,  Schubert S. Chu ,  Mei Chang ,  Sang-ho Yu ,  Kevin Moraes ,  See-Eng Phan

    IPC分类号： H01L21/28 ,  H01L21/44

    CPC分类号： C23C16/42 ,  C23C16/18 ,  C23C16/56 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67207 ,  H01L21/68785 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L29/665 ,  H01L29/78

    摘要： Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.

    摘要翻译： 本文所述的本发明的实施例通常提供用于形成硅化钴层，金属钴层和其它含钴材料的方法和装置。 在一个实施例中，提供了一种用于在衬底上形成含钴硅化物的材料的方法，其包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，沉积 在钴硅化物材料上的金属钴材料，并在基底上沉积金属接触材料。 在另一个实施例中，一种方法包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，将衬底暴露于退火工艺，将阻挡材料沉积在 钴硅化物材料，并将金属接触材料沉积在阻挡材料上。