公开(公告)号：US07531463B2

公开(公告)日：2009-05-12

申请号：US11586394

申请日：2006-10-24

申请人： Daniel A. Koos ,  Steven T. Mayer ,  Heung L. Park ,  Timothy Patrick Cleary ,  Thomas Mountsier

发明人： Daniel A. Koos ,  Steven T. Mayer ,  Heung L. Park ,  Timothy Patrick Cleary ,  Thomas Mountsier

IPC分类号： H01L21/302

CPC分类号： C23F1/18 ,  C23C18/1608 ,  C23C18/1689 ,  C23C18/1692 ,  C23C18/1696 ,  C23C18/1893 ,  C23F1/34 ,  H01L21/288 ,  H01L21/32134 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or ozone. The metal oxide produced is then removed using suitable metal oxide etching agents such as glycine. The oxidation and etching may occur in the same solution. In other embodiments, the exposed metal is directly etched without forming a metal oxide. Suitable direct metal etching agents include any number of acidic solutions. The process allows for controlled oxidation and/or etching with reduced pitting. After the metal regions are etched and recessed in the substrate surface, a conductive capping layer is formed using electroless deposition over the recessed exposed metal regions.

摘要翻译： 描述了用于选择性地蚀刻衬底的暴露的金属表面并在金属表面上形成导电覆盖层的蚀刻工艺。 在一些实施例中，蚀刻工艺涉及暴露的金属的氧化以形成随后从衬底的表面去除的金属氧化物。 暴露的金属可以通过使用含有氧化剂如过氧化物的溶液或通过使用氧化气体例如含氧或臭氧的氧化气体来氧化。 然后使用合适的金属氧化物蚀刻剂如甘氨酸除去所产生的金属氧化物。 氧化和蚀刻可能发生在相同的溶液中。 在其它实施例中，暴露的金属被直接蚀刻而不形成金属氧化物。 合适的直接金属蚀刻剂包括任何数量的酸性溶液。 该方法允许减少点蚀的受控氧化和/或蚀刻。 在金属区域被蚀刻并凹入基板表面之后，使用无电沉积形成在凹入的暴露的金属区域上的导电覆盖层。

公开(公告)号：US07338908B1

公开(公告)日：2008-03-04

申请号：US10690084

申请日：2003-10-20

申请人： Daniel A. Koos ,  Steven T. Mayer ,  Heung L. Park ,  Timothy Patrick Cleary ,  Thomas Mountsier

发明人： Daniel A. Koos ,  Steven T. Mayer ,  Heung L. Park ,  Timothy Patrick Cleary ,  Thomas Mountsier

IPC分类号： H01L21/302

CPC分类号： H01L21/32134 ,  H01L21/02068 ,  H01L21/321 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76883

摘要： An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or ozone. The metal oxide produced is then removed using suitable metal oxide etching agents such as glycine. The oxidation and etching may occur in the same solution. In other embodiments, the exposed metal is directly etched without forming a metal oxide. Suitable direct metal etching agents include any number of acidic solutions. The process allows for controlled oxidation and/or etching with reduced pitting. After the metal regions are etched and recessed in the substrate surface, a conductive capping layer is formed using electroless deposition over the recessed exposed metal regions.

摘要翻译： 描述了用于选择性地蚀刻衬底的暴露的金属表面并在金属表面上形成导电覆盖层的蚀刻工艺。 在一些实施例中，蚀刻工艺涉及暴露的金属的氧化以形成随后从衬底的表面去除的金属氧化物。 暴露的金属可以通过使用含有氧化剂如过氧化物的溶液或通过使用氧化气体例如含氧或臭氧的氧化气体来氧化。 然后使用合适的金属氧化物蚀刻剂如甘氨酸除去所产生的金属氧化物。 氧化和蚀刻可能发生在相同的溶液中。 在其它实施例中，暴露的金属被直接蚀刻而不形成金属氧化物。 合适的直接金属蚀刻剂包括任何数量的酸性溶液。 该方法允许减少点蚀的受控氧化和/或蚀刻。 在金属区域被蚀刻并凹入基板表面之后，使用无电沉积形成在凹入的暴露的金属区域上的导电覆盖层。

公开(公告)号：US08481432B2

公开(公告)日：2013-07-09

申请号：US13116963

申请日：2011-05-26

申请人： Steven T. Mayer ,  Daniel A. Koos ,  Eric Webb

发明人： Steven T. Mayer ,  Daniel A. Koos ,  Eric Webb

IPC分类号： H01L21/302

CPC分类号： C23F1/02 ,  C23C18/1608 ,  C23C18/1834 ,  C23F1/18 ,  C23F1/34 ,  H01L21/288 ,  H01L21/32134 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or ozone. The metal oxide produced is then removed using suitable metal oxide etching agents such as glycine. The oxidation and etching may occur in the same solution. In other embodiments, the exposed metal is directly etched without forming a metal oxide. Suitable direct metal etching agents include any number of acidic solutions. The process allows for controlled oxidation and/or etching with reduced pitting. After the metal regions are etched and recessed in the substrate surface, a conductive capping layer is formed using electroless deposition over the recessed exposed metal regions.

公开(公告)号：US20110223772A1

公开(公告)日：2011-09-15

申请号：US13116963

申请日：2011-05-26

申请人： Steven T. Mayer ,  Daniel A. Koos ,  Eric Webb

发明人： Steven T. Mayer ,  Daniel A. Koos ,  Eric Webb

IPC分类号： H01L21/306

CPC分类号： C23F1/02 ,  C23C18/1608 ,  C23C18/1834 ,  C23F1/18 ,  C23F1/34 ,  H01L21/288 ,  H01L21/32134 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or ozone. The metal oxide produced is then removed using suitable metal oxide etching agents such as glycine. The oxidation and etching may occur in the same solution. In other embodiments, the exposed metal is directly etched without forming a metal oxide. Suitable direct metal etching agents include any number of acidic solutions. The process allows for controlled oxidation and/or etching with reduced pitting. After the metal regions are etched and recessed in the substrate surface, a conductive capping layer is formed using electroless deposition over the recessed exposed metal regions.

摘要翻译： 描述了用于选择性地蚀刻衬底的暴露的金属表面并在金属表面上形成导电覆盖层的蚀刻工艺。 在一些实施例中，蚀刻工艺涉及暴露的金属的氧化以形成随后从衬底的表面去除的金属氧化物。 暴露的金属可以通过使用含有氧化剂如过氧化物的溶液或通过使用氧化气体例如含氧或臭氧的氧化气体来氧化。 然后使用合适的金属氧化物蚀刻剂如甘氨酸除去所产生的金属氧化物。 氧化和蚀刻可能发生在相同的溶液中。 在其它实施例中，暴露的金属被直接蚀刻而不形成金属氧化物。 合适的直接金属蚀刻剂包括任何数量的酸性溶液。 该方法允许减少点蚀的受控氧化和/或蚀刻。 在金属区域被蚀刻并凹入基板表面之后，使用无电沉积形成在凹入的暴露的金属区域上的导电覆盖层。

公开(公告)号：US07972970B2

公开(公告)日：2011-07-05

申请号：US11888312

申请日：2007-07-30

申请人： Steven T. Mayer ,  Daniel A. Koos ,  Eric Webb

发明人： Steven T. Mayer ,  Daniel A. Koos ,  Eric Webb

IPC分类号： H01L21/302

CPC分类号： C23F1/02 ,  C23C18/1608 ,  C23C18/1834 ,  C23F1/18 ,  C23F1/34 ,  H01L21/288 ,  H01L21/32134 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or ozone. The metal oxide produced is then removed using suitable metal oxide etching agents such as glycine. The oxidation and etching may occur in the same solution. In other embodiments, the exposed metal is directly etched without forming a metal oxide. Suitable direct metal etching agents include any number of acidic solutions. The process allows for controlled oxidation and/or etching with reduced pitting. After the metal regions are etched and recessed in the substrate surface, a conductive capping layer is formed using electroless deposition over the recessed exposed metal regions.

摘要翻译： 描述了用于选择性地蚀刻衬底的暴露的金属表面并在金属表面上形成导电覆盖层的蚀刻工艺。 在一些实施例中，蚀刻工艺涉及暴露的金属的氧化以形成随后从衬底的表面去除的金属氧化物。 暴露的金属可以通过使用含有氧化剂如过氧化物的溶液或通过使用氧化气体例如含氧或臭氧的氧化气体来氧化。 然后使用合适的金属氧化物蚀刻剂如甘氨酸除去所产生的金属氧化物。 氧化和蚀刻可能发生在相同的溶液中。 在其它实施例中，暴露的金属被直接蚀刻而不形成金属氧化物。 合适的直接金属蚀刻剂包括任何数量的酸性溶液。 该方法允许减少点蚀的受控氧化和/或蚀刻。 在金属区域被蚀刻并凹入基板表面之后，使用无电沉积形成在凹入的暴露的金属区域上的导电覆盖层。

公开(公告)号：US20090283499A1

公开(公告)日：2009-11-19

申请号：US11888312

申请日：2007-07-30

申请人： Steven T. Mayer ,  Daniel A. Koos ,  Eric Webb

发明人： Steven T. Mayer ,  Daniel A. Koos ,  Eric Webb

IPC分类号： C23F1/00

CPC分类号： C23F1/02 ,  C23C18/1608 ,  C23C18/1834 ,  C23F1/18 ,  C23F1/34 ,  H01L21/288 ,  H01L21/32134 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or ozone. The metal oxide produced is then removed using suitable metal oxide etching agents such as glycine. The oxidation and etching may occur in the same solution. In other embodiments, the exposed metal is directly etched without forming a metal oxide. Suitable direct metal etching agents include any number of acidic solutions. The process allows for controlled oxidation and/or etching with reduced pitting. After the metal regions are etched and recessed in the substrate surface, a conductive capping layer is formed using electroless deposition over the recessed exposed metal regions.

公开(公告)号：US6120354A

公开(公告)日：2000-09-19

申请号：US351424

申请日：1999-07-12

申请人： Daniel A. Koos ,  Sung C. Kim ,  Gurtej S. Sandhu

发明人： Daniel A. Koos ,  Sung C. Kim ,  Gurtej S. Sandhu

IPC分类号： B24B1/00 ,  B24B37/04 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321

CPC分类号： H01L21/3212 ,  B24B37/042 ,  B24B37/105 ,  H01L21/31053

摘要： A method of planarizing a substrate employs two separate chemical mechanical polishing (CMP) steps. In the first CMP step, the substrate is polished using a first CMP slurry solution and a polishing pad. A diluting solution is then applied to the polishing pad to remove slurry of the first CMP step. In the second CMP step, after applying the diluting solution to the polishing pad to remove the first slurry, second CMP slurry solution is applied to the polishing pad to facilitate additional planarization of the substrate. In a particular embodiment of this invention, the diluting solution comprises a buffer solution having a pH level corresponding to a pH level of one of the first or second CMP slurry solution. In accordance with another aspect of this embodiment, a plurality of different diluting solutions are applied to the polishing pad intermediate the respective first and second CMP steps.

摘要翻译： 平面化衬底的方法采用两个单独的化学机械抛光（CMP）步骤。 在第一CMP步骤中，使用第一CMP浆液和抛光垫对衬底进行抛光。 然后将稀释溶液施加到抛光垫上以除去第一CMP步骤的浆料。 在第二CMP步骤中，在将稀释溶液施加到抛光垫以除去第一浆料之后，将第二CMP浆料溶液施加到抛光垫上以促进衬底的附加平面化。 在本发明的一个具体实施方案中，稀释溶液包含具有对应于第一或第二CMP浆料溶液之一的pH值的pH值的缓冲溶液。 根据本实施例的另一方面，在相应的第一和第二CMP步骤之前，将多种不同的稀释溶液施加到抛光垫。

公开(公告)号：US06234877B1

公开(公告)日：2001-05-22

申请号：US09590035

申请日：2000-06-07

申请人： Daniel A. Koos ,  Sung C. Kim ,  Gurtej S. Sandhu

发明人： Daniel A. Koos ,  Sung C. Kim ,  Gurtej S. Sandhu

IPC分类号： B24B100

CPC分类号： H01L21/3212 ,  B24B37/042 ,  B24B37/105 ,  H01L21/31053

摘要： A method of planarizing a substrate employs two separate chemical mechanical polishing (CMP) steps. In the first CMP step, the substrate is polished using a first CMP slurry solution and a polishing pad. A diluting solution is then applied to the polishing pad to remove slurry of the first CMP step. In the second CMP step, after applying the diluting solution to the polishing pad to remove the first slurry, second CMP slurry solution is applied to the polishing pad to facilitate additional planarization of the substrate. In a particular embodiment of this invention, the diluting solution comprises a buffer solution having a pH level corresponding to a pH level of one of the first or second CMP slurry solution. In accordance with another aspect of this embodiment, a plurality of different diluting solutions are applied to the polishing pad intermediate the respective first and second CMP steps.

摘要翻译： 平面化衬底的方法采用两个单独的化学机械抛光（CMP）步骤。 在第一CMP步骤中，使用第一CMP浆液和抛光垫对衬底进行抛光。 然后将稀释溶液施加到抛光垫上以除去第一CMP步骤的浆料。 在第二CMP步骤中，在将稀释溶液施加到抛光垫以除去第一浆料之后，将第二CMP浆料溶液施加到抛光垫上以促进衬底的附加平面化。 在本发明的一个具体实施方案中，稀释溶液包含具有对应于第一或第二CMP浆料溶液之一的pH值的pH值的缓冲溶液。 根据本实施例的另一方面，在相应的第一和第二CMP步骤之前，将多种不同的稀释溶液施加到抛光垫。

公开(公告)号：US5741547A

公开(公告)日：1998-04-21

申请号：US589924

申请日：1996-01-23

申请人： Salman Akram ,  Daniel A. Koos

发明人： Salman Akram ,  Daniel A. Koos

IPC分类号： C23C16/34

CPC分类号： C23C16/34

摘要： A method of depositing a film of titanium nitride on a substrate which includes, positioning the substrate within a chemical vapor deposition reactor chamber which is maintained at a predetermined temperature and pressure; combining a gaseous source of nitrogen with a gaseous source of titanium to form a reactant gas mixture having complementary reactant molecules; and delivering the complementary reactant molecules within the chemical vapor deposition reactor from a selected distance from the substrate of greater than 1 cm. which facilitates the formation of titanium nitride film on the substrate having a given surface roughness which is at least 50% rougher than the titanium nitride film deposited using the same gaseous sources of titanium and nitrogen and which are combined under the same temperature and pressure condition but which are delivered to the surface of the substrate from a distance of about 1 cm. The gaseous sources of nitrogen may include phenylhydrazine.

摘要翻译： 一种在衬底上沉积氮化钛膜的方法，包括：将衬底定位在保持在预定温度和压力下的化学气相沉积反应器室内; 将气态氮源与钛的气态源组合以形成具有互补反应物分子的反应气体混合物; 以及将化学气相沉积反应器内的互补反应物分子从大于1cm的衬底的选定距离递送。 这有助于在具有给定的表面粗糙度的基底上形成氮化钛膜，其比使用相同的钛和氮气体源沉积的钛氮化物比在相同的温度和压力条件下组合的氮化钛膜更粗糙，但是 其从约1cm的距离传送到基板的表面。 气态氮源可以包括苯肼。

公开(公告)号：US5934980A

公开(公告)日：1999-08-10

申请号：US871028

申请日：1997-06-09

申请人： Daniel A. Koos ,  Sung C. Kim ,  Gurtej S. Sandhu

发明人： Daniel A. Koos ,  Sung C. Kim ,  Gurtej S. Sandhu

IPC分类号： B24B1/00 ,  B24B37/04 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321

CPC分类号： H01L21/3212 ,  B24B37/042 ,  B24B37/105 ,  H01L21/31053

摘要： A method of planarizing a substrate employs two separate chemical mechanical polishing (CMP) steps. In the first CMP step, the substrate is polished using a first CMP slurry solution and a polishing pad. A diluting solution is then applied to the polishing pad to remove slurry of the first CMP step. In the second CMP step, after applying the diluting solution to the polishing pad to remove the first slurry, second CMP slurry solution is applied to the polishing pad to facilitate additional planarization of the substrate. In a particular embodiment of this invention, the diluting solution comprises a buffer solution having a pH level corresponding to a pH level of one of the first or second CMP slurry solution. In accordance with another aspect of this embodiment, a plurality of different diluting solutions are applied to the polishing pad intermediate the respective first and second CMP steps.