公开(公告)号：US20130307150A1

公开(公告)日：2013-11-21

申请号：US13475526

申请日：2012-05-18

申请人： Daniel C. Edelstein ,  Takeshi Nogami ,  Christopher Parks ,  Tsong-Lin Tai

发明人： Daniel C. Edelstein ,  Takeshi Nogami ,  Christopher Parks ,  Tsong-Lin Tai

IPC分类号： H01L23/52 ,  H01L21/425

CPC分类号： H01L23/53238 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76883 ,  H01L23/522 ,  H01L23/53209 ,  H01L23/5329 ,  H01L23/53295 ,  H01L24/76 ,  H01L24/82 ,  H01L2924/0002 ,  H01L2924/00

摘要： A structure with improved electromigration resistance and methods for making the same. A structure having improved electromigration resistance includes a bulk interconnect having a dual layer cap and a dielectric capping layer. The dual layer cap includes a bottom metallic portion and a top metal oxide portion. Preferably the metal oxide portion is MnO or MnSiO and the metallic portion is Mn or CuMn. The structure is created by doping the interconnect with an impurity (Mn in the preferred embodiment), and then creating lattice defects at a top portion of the interconnect. The defects drive increased impurity migration to the top surface of the interconnect. When the dielectric capping layer is formed, a portion reacts with the segregated impurities, thus forming the dual layer cap on the interconnect. Lattice defects at the Cu surface can be created by plasma treatment, ion implantation, a compressive film, or other means.

摘要翻译： 具有改进的电迁移阻力的结构及其制造方法。 具有改进的电迁移电阻的结构包括具有双层盖和介电覆盖层的体互连。 双层帽包括底部金属部分和顶部金属氧化物部分。 优选地，金属氧化物部分是MnO或MnSiO，金属部分是Mn或CuMn。 通过用杂质（在优选实施例中为Mn）掺杂互连，然后在互连的顶部处产生晶格缺陷来产生该结构。 这些缺陷驱使增加的杂质向互连顶表面迁移。 当形成电介质盖层时，一部分与分离的杂质反应，从而在互连上形成双层盖。 Cu表面的晶格缺陷可以通过等离子体处理，离子注入，压缩薄膜或其他方式产生。

公开(公告)号：US08969197B2

公开(公告)日：2015-03-03

申请号：US13475526

申请日：2012-05-18

申请人： Daniel C. Edelstein ,  Takeshi Nogami ,  Christopher Parks ,  Tsong-Lin Tai

发明人： Daniel C. Edelstein ,  Takeshi Nogami ,  Christopher Parks ,  Tsong-Lin Tai

IPC分类号： H01L21/44

CPC分类号： H01L23/53238 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76883 ,  H01L23/522 ,  H01L23/53209 ,  H01L23/5329 ,  H01L23/53295 ,  H01L24/76 ,  H01L24/82 ,  H01L2924/0002 ,  H01L2924/00

摘要： A structure with improved electromigration resistance and methods for making the same. A structure having improved electromigration resistance includes a bulk interconnect having a dual layer cap and a dielectric capping layer. The dual layer cap includes a bottom metallic portion and a top metal oxide portion. Preferably the metal oxide portion is MnO or MnSiO and the metallic portion is Mn or CuMn. The structure is created by doping the interconnect with an impurity (Mn in the preferred embodiment), and then creating lattice defects at a top portion of the interconnect. The defects drive increased impurity migration to the top surface of the interconnect. When the dielectric capping layer is formed, a portion reacts with the segregated impurities, thus forming the dual layer cap on the interconnect. Lattice defects at the Cu surface can be created by plasma treatment, ion implantation, a compressive film, or other means.

摘要翻译： 具有改进的电迁移阻力的结构及其制造方法。 具有改进的电迁移电阻的结构包括具有双层盖和介电覆盖层的体互连。 双层帽包括底部金属部分和顶部金属氧化物部分。 优选地，金属氧化物部分是MnO或MnSiO，金属部分是Mn或CuMn。 通过用杂质（在优选实施例中为Mn）掺杂互连，然后在互连的顶部处产生晶格缺陷来产生该结构。 这些缺陷驱使增加的杂质向互连顶表面迁移。 当形成电介质盖层时，一部分与分离的杂质反应，从而在互连上形成双层盖。 Cu表面的晶格缺陷可以通过等离子体处理，离子注入，压缩薄膜或其他方式产生。

公开(公告)号：US08803058B2

公开(公告)日：2014-08-12

申请号：US13241500

申请日：2011-09-23

申请人： Christopher Parks

发明人： Christopher Parks

IPC分类号： H01L27/148 ,  H04N5/372 ,  H04N5/3728 ,  H04N5/376

CPC分类号： H04N5/372 ,  H01L27/14806 ,  H01L27/14843 ,  H04N5/37213 ,  H04N5/3728 ,  H04N5/3765

摘要： A CCD image sensor includes vertical CCD shift registers and gate electrodes disposed over the vertical CCD shift registers. The gate electrodes are divided into distinct groups of gate electrodes. The CCD image sensor is adapted to operate in an accumulation mode and a charge transfer mode, an accumulation mode and a charge shifting mode, or an accumulation mode, a charge transfer mode, and a charge shifting mode. The charge transfer mode has an initial charge transfer phase and a final charge transfer phase. The charge shifting mode has an initial charge shifting phase and a final charge shifting phase.

摘要翻译： CCD图像传感器包括垂直CCD移位寄存器和设置在垂直CCD移位寄存器上的栅电极。 栅电极被分成不同的栅电极组。 CCD图像传感器适于在累积模式和电荷转移模式，累积模式和充电移动模式，或累加模式，电荷转移模式和电荷移动模式下操作。 电荷转移模式具有初始电荷转移相和最终电荷转移相。 电荷移动模式具有初始电荷偏移相位和最终电荷转移相位。

公开(公告)号：US20130075791A1

公开(公告)日：2013-03-28

申请号：US13623316

申请日：2012-09-20

申请人： Christopher Parks

发明人： Christopher Parks

IPC分类号： H01L27/148 ,  H01L31/18

CPC分类号： H01L27/14831 ,  H01L27/1463 ,  H01L27/14689 ,  H01L27/14812

摘要： In various embodiments, a charge-coupled device includes channel stops laterally spaced away from the channel by fully depleted regions.

摘要翻译： 在各种实施例中，电荷耦合器件包括通过完全耗尽区域横向间隔开通道的通道停止。

公开(公告)号：US20120154620A1

公开(公告)日：2012-06-21

申请号：US12973108

申请日：2010-12-20

申请人： Christopher Parks

发明人： Christopher Parks

IPC分类号： H04N5/228 ,  H04N5/335

CPC分类号： H04N5/37213

摘要： An image sensor includes a horizontal shift register electrically connected to a pixel array for receiving charge packets from the pixel array. A non-destructive sense node is connected to an output of the horizontal shift register. A charge directing switch is electrically connected to the non-destructive sense node. The charge directing switch includes two outputs. A charge multiplying horizontal shift register is electrically connected to one output of the charge directing switch. A discharging element is connected to the other output of the charge directing switch.

摘要翻译： 图像传感器包括电连接到像素阵列的水平移位寄存器，用于从像素阵列接收电荷分组。 非破坏性感测节点连接到水平移位寄存器的输出。 充电指示开关电连接到非破坏性感测节点。 充电指示开关包括两个输出。 充电倍增水平移位寄存器电连接到充电指示开关的一个输出端。 放电元件连接到充电指示开关的另一个输出端。

公开(公告)号：US20120151753A1

公开(公告)日：2012-06-21

申请号：US12973134

申请日：2010-12-20

申请人： Christopher Parks

发明人： Christopher Parks

IPC分类号： H01H11/00

CPC分类号： H04N5/355 ,  H01L29/76816 ,  H04N5/37213

摘要： An image sensor includes a horizontal shift register electrically connected to a pixel array for receiving charge packets from the pixel array. A non-destructive sense node is connected to an output of the horizontal shift register. A charge directing switch is electrically connected to the non-destructive sense node. The charge directing switch includes two outputs. A charge multiplying horizontal shift register is electrically connected to one output of the charge directing switch. A discharging element is connected to the other output of the charge directing switch.

公开(公告)号：US20120147239A1

公开(公告)日：2012-06-14

申请号：US12967311

申请日：2010-12-14

申请人： Christopher Parks

发明人： Christopher Parks

IPC分类号： H04N5/335

CPC分类号： H04N5/372 ,  H04N5/37213

摘要： Charge packets are transferred from a pixel array in an image sensor to a horizontal shift register. Each charge packet is shifted to a non-destructive sense node. Each charge packet is non-destructively sensed and a signal representative of a number of charge carriers in the charge packet is produced. Respective charge packets are directed to a charge multiplying output channel when the signal representative of the number of charge carriers in each charge packet indicates the charge packet will not saturate the charge multiplying horizontal shift register. Respective charge packets are directed to a charge bypass output channel or an amplifier when the signal representative of the number of charge carriers in each charge packet indicates the charge packet will saturate the charge multiplying horizontal shift register.

摘要翻译： 充电包从图像传感器中的像素阵列传送到水平移位寄存器。 每个充电分组被移动到非破坏性感测节点。 每个电荷分组被非破坏性地感测，并且产生代表电荷分组中的电荷载流子数量的信号。 当表示每个充电分组中的电荷载体数量的信号指示充电分组不会使电荷乘法水平移位寄存器饱和时，各个电荷分组被引导到电荷倍增输出通道。 当表示每个充电分组中的电荷载体数量的信号指示充电分组将使充电倍增水平移位寄存器饱和时，各个充电分组被引导到充电旁路输出通道或放大器。

公开(公告)号：US08184186B2

公开(公告)日：2012-05-22

申请号：US12770806

申请日：2010-04-30

申请人： Christopher Parks ,  Gregory O. Moberg

发明人： Christopher Parks ,  Gregory O. Moberg

IPC分类号： H04N3/14 ,  H04N5/335 ,  H01L27/00

CPC分类号： H04N5/372

摘要： An image sensor includes an electronic shutter layer that is used to drain charge during an electronic shutter operation. A timing generator is electrically connected to a selector component. The selector component is electrically connected to an electronic shutter pulse driver component. The electronic shutter pulse driver component is electrically connected to a current sensing component. The current sensing component is electrically connected to the electronic shutter layer through a contact. The current sensing component senses a current level in the electronic shutter layer and changes a state of an alert signal when the current level equals or exceeds a threshold current level. Depending on the state of an alert signal, the selector component either transmits, or does not transmit, the drive pulse signal to the electronic shutter pulse driver component. An electronic shutter operation is performed when the electronic shutter pulse driver component receives the drive pulse signal.

摘要翻译： 图像传感器包括用于在电子快门操作期间排出电荷的电子快门层。 定时发生器电连接到选择器部件。 选择器部件电连接到电子快门脉冲驱动器部件。 电子快门脉冲驱动器部件电连接到电流感测部件。 电流感测部件通过触点电连接到电子快门层。 电流感测部件感应电子快门层中的电流电平，并且当电流等于或超过阈值电流电平时改变警报信号的状态。 根据警报信号的状态，选择器部件将驱动脉冲信号传输或不传送到电子快门脉冲驱动器部件。 当电子快门脉冲驱动器部件接收到驱动脉冲信号时，执行电子快门操作。

公开(公告)号：US08102455B2

公开(公告)日：2012-01-24

申请号：US12716380

申请日：2010-03-03

申请人： Christopher Parks

发明人： Christopher Parks

IPC分类号： H04N3/14 ,  H04N3/16 ,  H04N5/335 ,  H04N9/04 ,  H01L27/00

CPC分类号： H01L29/768 ,  H01L27/14621 ,  H01L27/14831 ,  H01L27/14887 ,  H04N5/335 ,  H04N5/3458 ,  H04N5/347 ,  H04N5/37213 ,  H04N9/045

摘要： An image sensor includes a plurality of pixels overlaid with a color filter pattern of at least two colors having the same color on every other pixel in one direction; three or more charge-coupled devices oriented parallel to the every other pixel color filter repeat pattern; a charge sensing amplifier at the output of at least two of the charge couple devices; each charge-coupled device having a first and a second gate; a CCD-to-CCD transfer gate connecting adjacent charge-coupled devices with the first gate being on one side of the CCD-to-CCD transfer gate and the second gate being on the opposite side of the CCD-to-CCD transfer gate; all CCD-to-CCD transfer gates are electrically connected together; all first gates are electrically connected; and all second gates are electrically connected.

公开(公告)号：US08035716B2

公开(公告)日：2011-10-11

申请号：US12138651

申请日：2008-06-13

申请人： Christopher Parks

发明人： Christopher Parks

IPC分类号： H04N3/14 ,  H04N9/083

CPC分类号： H04N5/37457 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14645 ,  H01L27/14689 ,  H04N5/347

摘要： An image sensor includes a unit cell of four pixels. The unit cell includes four photosensitive regions that collect charge in response to light; four transfer transistors that respectively pass the charge from each of the four photosensitive regions to one common charge-to-voltage conversion mechanism; three control wires in which a first control wire controls two of the transfer transistors and a second control wire controls one of the transfer transistors and a third control wire controls one of the transfer transistors; an amplifier connected to the common charge-to-voltage conversion mechanism that outputs an output signal in response to a signal from the charge-to-voltage conversion mechanism; and a reset transistor connected to the common charge-to-voltage conversion mechanism for resetting the charge-to-voltage conversion mechanism to a predetermined signal level.

摘要翻译： 图像传感器包括四个像素的单位单元。 单位电池包括响应于光而收集电荷的四个感光区域; 四个转移晶体管分别将电荷从四个感光区域中的每一个传递到一个公共的电荷 - 电压转换机构; 三条控制线，其中第一控制线控制两个转移晶体管，第二控制线控制转移晶体管之一，第三控制线控制转移晶体管之一; 连接到公共电荷 - 电压转换机构的放大器，其响应于来自电荷 - 电压转换机构的信号输出输出信号; 以及连接到公共电荷到电压转换机构的复位晶体管，用于将电荷 - 电压转换机构复位到预定的信号电平。