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    Recovery of hydrophobicity of low-k and ultra low-k organosilicate films used as inter metal dielectrics
    6.
    发明申请
    Recovery of hydrophobicity of low-k and ultra low-k organosilicate films used as inter metal dielectrics 失效
    用作金属间电介质的低k和超低k有机硅酸盐膜的疏水性的恢复

    公开(公告)号：US20050106762A1

    公开(公告)日：2005-05-19

    申请号：US10853771

    申请日：2004-05-25

    申请人： Nirupama Chakrapani ,  Matthew Colburn ,  Christos Dimitrakopoulos ,  Dirk Pfeiffer ,  Sampath Purushothaman ,  Satyanarayana Nitta

    发明人： Nirupama Chakrapani ,  Matthew Colburn ,  Christos Dimitrakopoulos ,  Dirk Pfeiffer ,  Sampath Purushothaman ,  Satyanarayana Nitta

    IPC分类号： H01L21/00 ,  H01L21/3105 ,  H01L21/312 ,  H01L21/768

    CPC分类号： H01L21/76826 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/31058 ,  H01L21/76807 ,  H01L21/76814 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Often used to reduce the RC delay in integrated circuits are dielectric films of porous organosilicates which have a silica like backbone with alkyl or aryl groups (to add hydrophobicity to the materials and create free volume) attached directly to the Si atoms in the network. Si—R bonds rarely survive an exposure to plasmas or chemical treatments commonly used in processing; this is especially the case in materials with an open cell pore structure. When Si—R bonds are broken, the materials lose hydrophobicity, due to formation of hydrophilic silanols and low dielectric constant is compromised. A method by which the hydrophobicity of the materials is recovered using a novel class of silylation agents which may have the general formula (R2N)XSiR′Y where X and Y are integers from 1 to 3 and 3 to 1 respectively, and where R and R′ are selected from the group of hydrogen, alkyl, aryl, allyl and a vinyl moiety. Mechanical strength of porous organosilicates is also improved as a result of the silylation treatment.

    摘要翻译： 通常用于减少集成电路中的RC延迟的是多孔有机硅酸盐的介电膜，其具有二氧化硅像主链与烷基或芳基（以增加材料的疏水性并产生自由体积）直接连接到网络中的Si原子。 Si-R键在暴露于等离子体或通常用于加工的化学处理中很少存活; 这在具有开孔细孔结构的材料中尤其如此。 当Si-R键断裂时，材料由于形成亲水硅烷醇而损失疏水性，并且低介电常数受损。 使用新型甲硅烷基化剂回收材料的疏水性的方法，其可以具有通式（R 2 N 2）X SiR'Y 其中X和Y分别为1至3和3至1的整数，并且其中R和R'选自氢，烷基，芳基，烯丙基和乙烯基部分。 由于甲硅烷基化处理，多孔有机硅酸盐的机械强度也得到改善。

    Method for fabricating a self-aligned nanocolumnar airbridge and structure produced thereby
    7.
    发明申请
    Method for fabricating a self-aligned nanocolumnar airbridge and structure produced thereby 失效
    制造自对准纳米柱状空中桥梁的方法及由此制造的结构

    公开(公告)号：US20050272341A1

    公开(公告)日：2005-12-08

    申请号：US11150059

    申请日：2005-06-10

    申请人： Matthew Colburn ,  Satyanarayana Nitta ,  Sampath Purushothaman

    发明人： Matthew Colburn ,  Satyanarayana Nitta ,  Sampath Purushothaman

    IPC分类号： H01J9/14 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/768 ,  H01L21/8242 ,  H01L23/48 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L29/06 ,  H01L29/40

    CPC分类号： H01L21/7682 ,  H01L23/5222 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for fabricating a low k, ultra-low k, and extreme-low k multilayer interconnect structure on a substrate in which the interconnect line features are separated laterally by a dielectric with vertically oriented nano-scale voids formed by perforating it using sub-optical lithography patterning and etching techniques and closing off the tops of the perforations by a dielectric deposition step. The lines are supported either by solid or patterned dielectric features underneath. The method avoids the issues associated with the formation of air gaps after the fabrication of conductor patterns and those associated with the integration of conventional low k, ultra-low k and extreme low k dielectrics which have porosity present before the formation of the interconnect patterns.

    摘要翻译： 一种用于在衬底上制造低k，超低k和极低k多层互连结构的方法，其中互连线特征由具有垂直取向的纳米级空隙的电介质侧向分开， 光刻图案和蚀刻技术，并通过介电沉积步骤封闭穿孔的顶部。 线路由固体或图案化的电介质特征支撑。 该方法避免了在形成导体图案之后与形成气隙相关的问题，以及与形成互连图案之前具有孔隙率的常规低k，超低k和极低k电介质的集成相关联的问题。

    RECOVERY OF HYDROPHOBICITY OF LOW-K AND ULTRA LOW-K ORGANOSILICATE FILMS USED AS INTER METAL DIELECTRICS
    8.
    发明申请
    RECOVERY OF HYDROPHOBICITY OF LOW-K AND ULTRA LOW-K ORGANOSILICATE FILMS USED AS INTER METAL DIELECTRICS 失效
    作为金属电介质的低K和超低K有机硅膜的疏水性恢复

    公开(公告)号：US20070138640A1

    公开(公告)日：2007-06-21

    申请号：US11676447

    申请日：2007-02-19

    申请人： Nirupama Chakrapani ,  Matthew Colburn ,  Christops Dimitrakopculos ,  Dirk Pfeiffer ,  Sampath Purushothaman ,  Satyanarayana Nitta

    发明人： Nirupama Chakrapani ,  Matthew Colburn ,  Christops Dimitrakopculos ,  Dirk Pfeiffer ,  Sampath Purushothaman ,  Satyanarayana Nitta

    IPC分类号： H01L23/52 ,  H01L23/48

    CPC分类号： H01L21/76826 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/31058 ,  H01L21/76807 ,  H01L21/76814 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Often used to reduce the RC delay in integrated circuits are dielectric films of porous organosilicates which have a silica like backbone with alkyl or aryl groups (to add hydrophobicity to the materials and create free volume) attached directly to the Si atoms in the network. Si—R bonds rarely survive an exposure to plasmas or chemical treatments commonly used in processing; this is especially the case in materials with an open cell pore structure. When Si—R bonds are broken, the materials lose hydrophobicity, due to formation of hydrophilic silanols and low dielectric constant is compromised. A method by which the hydrophobicity of the materials is recovered using a novel class of silylation agents which may have the general formula (R2N)XSiR′Y where X and Y are integers from 1 to 3 and 3 to 1 respectively, and where R and R′ are selected from the group of hydrogen, alkyl, aryl, allyl and a vinyl moiety. Mechanical strength of porous organosilicates is also improved as a result of the silylation treatment.

    摘要翻译： 通常用于减少集成电路中的RC延迟的是多孔有机硅酸盐的介电膜，其具有二氧化硅像主链与烷基或芳基（以增加材料的疏水性并产生自由体积）直接附着在网络中的Si原子。 Si-R键在暴露于等离子体或通常用于加工的化学处理中很少存活; 这在具有开孔细孔结构的材料中尤其如此。 当Si-R键断裂时，材料由于形成亲水硅烷醇而损失疏水性，并且低介电常数受损。 使用新型甲硅烷基化剂回收材料的疏水性的方法，其可以具有通式（R 2 N 2）X SiR'Y 其中X和Y分别为1至3和3至1的整数，并且其中R和R'选自氢，烷基，芳基，烯丙基和乙烯基部分。 由于甲硅烷基化处理，多孔有机硅酸盐的机械强度也得到改善。

    METHOD FOR FABRICATING A SELF-ALIGNED NANOCOLUMNAR AIRBRIDGE AND STRUCTURE PRODUCED THEREBY
    9.
    发明申请
    METHOD FOR FABRICATING A SELF-ALIGNED NANOCOLUMNAR AIRBRIDGE AND STRUCTURE PRODUCED THEREBY 有权
    制备自对准纳米核弹体的方法及其生产的结构

    公开(公告)号：US20050208752A1

    公开(公告)日：2005-09-22

    申请号：US10804553

    申请日：2004-03-19

    申请人： Matthew Colburn ,  Satyanarayana Nitta ,  Sampath Purushothaman

    发明人： Matthew Colburn ,  Satyanarayana Nitta ,  Sampath Purushothaman

    IPC分类号： H01J9/14 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/768 ,  H01L21/8242 ,  H01L23/48 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L29/06 ,  H01L29/40

    CPC分类号： H01L21/7682 ,  H01L23/5222 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for fabricating a low k, ultra-low k, and extreme-low k multilayer interconnect structure on a substrate in which the interconnect line features are separated laterally by a dielectric with vertically oriented nano-scale voids formed by perforating it using sub-optical lithography patterning and etching techniques and closing off the tops of the perforations by a dielectric deposition step. The lines are supported either by solid or patterned dielectric features underneath. The method avoids the issues associated with the formation of air gaps after the fabrication of conductor patterns and those associated with the integration of conventional low k, ultra-low k and extreme low k dielectrics which have porosity present before the formation of the interconnect patterns.

    摘要翻译： 一种用于在衬底上制造低k，超低k和极低k多层互连结构的方法，其中互连线特征由具有垂直取向的纳米级空隙的电介质侧向分开， 光刻图案和蚀刻技术，并通过介电沉积步骤封闭穿孔的顶部。 线路由固体或图案化的电介质特征支撑。 该方法避免了在形成导体图案之后与形成气隙相关的问题，以及与形成互连图案之前具有孔隙率的常规低k，超低k和极低k电介质的集成相关联的问题。

    Method of producing self-aligned mask in conjuction with blocking mask, articles produced by same and composition for same
    10.
    发明申请
    Method of producing self-aligned mask in conjuction with blocking mask, articles produced by same and composition for same 失效
    与阻挡面膜相结合制成自对准面膜的方法，由相同制成的制品和组合物制成

    公开(公告)号：US20050208430A1

    公开(公告)日：2005-09-22

    申请号：US10804552

    申请日：2004-03-19

    申请人： Matthew Colburn ,  Satyanarayana Nitta ,  Sampath Purushothaman

    发明人： Matthew Colburn ,  Satyanarayana Nitta ,  Sampath Purushothaman

    IPC分类号： G03F7/00 ,  G03F7/20

    CPC分类号： G03F7/2022

    摘要： A method of forming a self aligned pattern on an existing pattern on a substrate including applying a coating of a solution containing a masking material in a carrier, the masking material being either photo or thermally sensitive; performing a blanket exposure of the substrate; and allowing at least a portion of the masking material to preferentially develop in a fashion that replicates the existing pattern of the substrate. The existing pattern includes a first set of regions of the substrate having a first reflectivity and a second set of regions of the substrate having a second reflectivity different from the first composition. The first set of regions can include one or more metal elements and the second set of regions can include one or more dielectrics. Structures made in accordance with the method. A low resolution mask is used to block out regions over the substrate. Additionally, the resist can be applied over another masking layer that contains a separate pattern.

    摘要翻译： 一种在衬底上的现有图案上形成自对准图案的方法，包括在载体中涂覆含有掩模材料的溶液的涂层，所述掩模材料为光敏或热敏感的; 进行基板的覆盖曝光; 并且允许至少一部分掩模材料以复制衬底的现有图案的方式优先显影。 现有图案包括具有第一反射率的衬底的第一组区域和具有不同于第一组成的第二反射率的衬底的第二组区域。 第一组区域可以包括一个或多个金属元素，第二组区域可以包括一个或多个电介质。 按照该方法制造的结构。 低分辨率掩模用于阻挡衬底上的区域。 另外，抗蚀剂可以施加在包含单独图案的另一掩蔽层上。