公开(公告)号：US20050106873A1

公开(公告)日：2005-05-19

申请号：US10890034

申请日：2004-07-12

申请人： Daniel Hoffman ,  Diana Ma ,  Yan Ye ,  Jang Yang

发明人： Daniel Hoffman ,  Diana Ma ,  Yan Ye ,  Jang Yang

IPC分类号： H01L21/205 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/461 ,  H05H1/00

CPC分类号： H01J37/32165 ,  H01J37/32091

摘要： A method and apparatus for processing a semiconductor substrate is disclosed. A plasma reactor has a capacitive electrode driven by a plurality of RF power sources, and the electrode capacitance is matched at the desired plasma density and RF source frequency to the negative capacitance of the plasma, to provide an electrode plasma resonance supportive of a broad process window within which the plasma may be sustained.

摘要翻译： 公开了一种用于处理半导体衬底的方法和设备。 等离子体反应器具有由多个RF电源驱动的电容电极，并且电极电容以期望的等离子体密度和RF源频率匹配到等离子体的负电容，以提供支持广泛过程的电极等离子体共振 可以维持等离子体的窗口。

公开(公告)号：US20080023143A1

公开(公告)日：2008-01-31

申请号：US11881801

申请日：2007-07-27

申请人： Daniel Hoffman ,  Matthew Miller ,  Jang Yang ,  Heeyeop Chae ,  Michael Barnes ,  Tetsuya Ishikawa ,  Yan Ye

发明人： Daniel Hoffman ,  Matthew Miller ,  Jang Yang ,  Heeyeop Chae ,  Michael Barnes ,  Tetsuya Ishikawa ,  Yan Ye

IPC分类号： H01L21/3065 ,  H01L21/285

CPC分类号： H01J37/32091 ,  H01J37/3244 ,  H01J37/32623 ,  H01J37/3266

摘要： A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the side wall and the workpiece support being located along a common axis of symmetry.

摘要翻译： 等离子体反应器包括真空外壳，其包括限定真空室的侧壁和顶板，以及腔室内的工件支撑件，并面向天花板以支撑平面工件，工件支撑件和天花板一起限定了工件之间的加工区域 支持和天花板。 工艺气体入口将工艺气体提供到腔室中。 等离子体源功率电极连接到RF功率发生器，用于将等离子体源功率电容耦合到腔室中，以在腔室内维持等离子体。 反应器还包括至少第一架空螺线管电磁体，靠近天花板，架空螺线管电磁体，天花板，侧壁和工件支撑件沿着共同的对称轴线定位。

公开(公告)号：US20050001556A1

公开(公告)日：2005-01-06

申请号：US10841116

申请日：2004-05-07

申请人： Daniel Hoffman ,  Matthew Miller ,  Jang Yang ,  Heeyeop Chae ,  Michael Barnes ,  Tetsuya Ishikawa ,  Yan Ye

发明人： Daniel Hoffman ,  Matthew Miller ,  Jang Yang ,  Heeyeop Chae ,  Michael Barnes ,  Tetsuya Ishikawa ,  Yan Ye

IPC分类号： H01J37/32 ,  H01J7/24

CPC分类号： H01J37/32091 ,  H01J37/3244 ,  H01J37/32623 ,  H01J37/3266

摘要： A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the side wall and the workpiece support being located along a common axis of symmetry. A current source is connected to the first solenoidal electromagnet and furnishes a first electric current in the first solenoidal electromagnet whereby to generate within the chamber a magnetic field which is a function of the first electric current, the first electric current having a value such that the magnetic field increases uniformity of plasma ion density radial distribution about the axis of symmetry near a surface of the workpiece support.

摘要翻译： 等离子体反应器包括真空外壳，其包括限定真空室的侧壁和顶板，以及腔室内的工件支撑件，并面向天花板以支撑平面工件，工件支撑件和天花板一起限定了工件之间的加工区域 支持和天花板。 工艺气体入口将工艺气体提供到腔室中。 等离子体源功率电极连接到RF功率发生器，用于将等离子体源功率电容耦合到腔室中，以在腔室内维持等离子体。 反应器还包括至少第一架空螺线管电磁体，靠近天花板，架空螺线管电磁体，天花板，侧壁和工件支撑件沿着共同的对称轴线定位。 电流源连接到第一螺线管电磁体并且在第一螺线管电磁体中提供第一电流，从而在腔室内产生与第一电流有关的磁场，第一电流具有使得 磁场增加等离子体离子密度在工件支撑表面附近的对称轴的径向分布的均匀性。

公开(公告)号：US20060157201A1

公开(公告)日：2006-07-20

申请号：US11360944

申请日：2006-02-23

申请人： Daniel Hoffman ,  Matthew Miller ,  Jang Yang ,  Heeyeop Chae ,  Michael Barnes ,  Tetsuya Ishikawa ,  Yan Ye

发明人： Daniel Hoffman ,  Matthew Miller ,  Jang Yang ,  Heeyeop Chae ,  Michael Barnes ,  Tetsuya Ishikawa ,  Yan Ye

IPC分类号： C23F1/00

CPC分类号： H01J37/32091 ,  H01J37/3244 ,  H01J37/32623 ,  H01J37/3266

摘要： A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the side wall and the workpiece support being located along a common axis of symmetry. A current source is connected to the first solenoidal electromagnet and furnishes a first electric current in the first solenoidal electromagnet whereby to generate within the chamber a magnetic field which is a function of the first electric current, the first electric current having a value such that the magnetic field increases uniformity of plasma ion density radial distribution about the axis of symmetry near a surface of the workpiece support.

摘要翻译： 等离子体反应器包括真空外壳，其包括限定真空室的侧壁和顶板，以及腔室内的工件支撑件，并面向天花板以支撑平面工件，工件支撑件和天花板一起限定了工件之间的加工区域 支持和天花板。 工艺气体入口将工艺气体提供到腔室中。 等离子体源功率电极连接到RF功率发生器，用于将等离子体源功率电容耦合到腔室中，以在腔室内维持等离子体。 反应器还包括至少第一架空螺线管电磁体，靠近天花板，架空螺线管电磁体，天花板，侧壁和工件支撑件沿着共同的对称轴线定位。 电流源连接到第一螺线管电磁体并且在第一螺线管电磁体中提供第一电流，从而在腔室内产生与第一电流有关的磁场，第一电流具有使得 磁场增加等离子体离子密度在工件支撑表面附近的对称轴的径向分布的均匀性。

公开(公告)号：US06458516B1

公开(公告)日：2002-10-01

申请号：US09551255

申请日：2000-04-18

申请人： Yan Ye ,  Pavel Ionov ,  Allen Zhao ,  Peter Hsieh ,  Diana Ma ,  Chun Yan ,  Jie Yuan

发明人： Yan Ye ,  Pavel Ionov ,  Allen Zhao ,  Peter Hsieh ,  Diana Ma ,  Chun Yan ,  Jie Yuan

IPC分类号： G03C556

CPC分类号： H01L21/31138 ,  H01L21/02115 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/0274 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/3127 ,  H01L21/3146 ,  H01L21/31612 ,  H01L21/32136 ,  H01L21/32139

摘要： A method of patterning a layer of dielectric material having a thickness greater than 1,000 Å, and typically a thickness greater than 5,000 Å. The method is particularly useful for forming a high aspect ratio via or a high aspect ratio contact including self-aligned contact structures, where the aspect ratio is typically greater than 3 and the feature size of the contact is about 0.25 &mgr;m or less. In particular, an organic, polymeric-based masking material is used in a plasma etch process for transferring a desired pattern through an underlying layer of dielectric material. The combination of masking material and plasma source gas must provide the necessary high selectivity toward etching of the underlying layer of dielectric material. The selectivity is preferably greater than 3:1, where the etch rate of the dielectric material is at least 3 times greater than the etch rate of the organic, polymeric-based masking material. The dielectric material may be inorganic, for example, silicon oxide; doped silicon oxide; carbon-containing silicon oxide; SOG; BPSG; and similar materials. The dielectric material may be also be organic, where a high temperature organic-based masking material is used for transferring a desired pattern, and the underlying dielectric material is of a chemical and structural composition which is sufficiently different from the masking material that the required selectivity is provided. In any case, the organic, polymeric-based masking material is easily removed from the substrate etch process after completion of etch without damage to underlying device structures.

摘要翻译： 图案化厚度大于1000，通常大于5,000的厚度的电介质材料层的方法。 该方法对于形成包括自对准接触结构的高纵横比通孔或高纵横比接触特别有用，其中纵横比通常大于3，接触的特征尺寸为约0.25μm或更小。 特别地，在等离子体蚀刻工艺中使用有机的基于聚合物的掩模材料，用于将期望的图案转移通过介电材料的下层。 掩模材料和等离子体源气体的组合必须为蚀刻介电材料的下层提供必要的高选择性。 选择性优选大于3:1，其中介电材料的蚀刻速率比有机聚合物基掩模材料的蚀刻速率高至少3倍。 介电材料可以是无机的，例如氧化硅; 掺杂氧化硅; 含碳氧化硅; SOG; BPSG; 和类似的材料。 介电材料也可以是有机的，其中使用高温有机基掩蔽材料来转移所需的图案，并且下面的介电材料具有与掩蔽材料充分不同的化学和结构组成，所需的选择性 被提供。 在任何情况下，有机的基于聚合物的掩蔽材料在蚀刻完成之后容易地从基底蚀刻工艺中去除而不损坏下面的器件结构

公开(公告)号：US06352049B1

公开(公告)日：2002-03-05

申请号：US09119417

申请日：1998-07-20

申请人： Gerald Yin ,  Arnold Kolandenko ,  Hong Ching Shan ,  Peter Loewenhardt ,  Chii Lee ,  Yan Ye ,  Xueyan Qian ,  Songlin Xu ,  Arthur Chen ,  Arthur Sato ,  Michael Grimbergen ,  Diana Ma ,  John Yamartino ,  Chun Yan ,  Wade Zawalski

发明人： Gerald Yin ,  Arnold Kolandenko ,  Hong Ching Shan ,  Peter Loewenhardt ,  Chii Lee ,  Yan Ye ,  Xueyan Qian ,  Songlin Xu ,  Arthur Chen ,  Arthur Sato ,  Michael Grimbergen ,  Diana Ma ,  John Yamartino ,  Chun Yan ,  Wade Zawalski

IPC分类号： C23E1648

CPC分类号： H01J37/32871

摘要： The present invention provides an apparatus and method, for plasma assisted processing of a workpiece, which provides for separate control of species density within a processing plasma. The present invention has a processing chamber and at least one collateral chamber. The collateral chamber is capable of generating a collateral plasma and delivering it to the processing chamber. To control the densities of the particle species within the processing chamber the present invention may have: a filter interposed between the collateral chamber and the processing chamber, primary chamber source power, several collateral chambers providing separate inputs to the processing chamber, or combinations thereof. Collateral plasma may be: filtered, combined with primary chamber generated plasma, combined with another collateral plasma, or combinations thereof to separately control the densities of the species comprising the processing plasma.

摘要翻译： 本发明提供了一种用于工件的等离子体辅助处理的装置和方法，其提供对处理等离子体内的物质密度的单独控制。 本发明具有处理室和至少一个辅助室。 辅助室能够产生旁路血浆并将其输送到处理室。 为了控制处理室内的颗粒物质的密度，本发明可以具有：插入在侧室和处理室之间的过滤器，主室源功率，向处理室提供单独输入的若干附属室，或其组合。 附带等离子体可以是：过滤，与初级室产生的等离子体组合，与另一副侧血浆或其组合组合以分别控制包含处理血浆的物质的密度。

公开(公告)号：US06296780B1

公开(公告)日：2001-10-02

申请号：US08986427

申请日：1997-12-08

申请人： Chun Yan ,  Yan Ye ,  Diana Ma

发明人： Chun Yan ,  Yan Ye ,  Diana Ma

IPC分类号： H01L213213

CPC分类号： H01L21/31116

摘要： The present invention is embodied in a method and apparatus for etching an organic anti-reflective coating (OARC) layer and a titanium nitride anti-reflective coating (TiN ARC) layer deposited on a substrate located within a processing chamber, without the need for removing the substrate being processed from the processing chamber in which it is situated and without the need for intervening processing steps, such as chamber cleaning operations. The substrate has a base, an underlying oxide layer above the base, an overlying layer above the underlying layer, a middle conductive layer, a TiN ARC layer, and a top OARC layer spun on top of the TiN ARC.

摘要翻译： 本发明体现在一种用于蚀刻有机抗反射涂层（OARC）层和沉积在位于处理室内的衬底上的氮化钛抗反射涂层（TiN ARC）层的方法和装置中，而不需要去除 基板从其所处理的处理室进行处理，而不需要中间处理步骤，例如室清洁操作。 衬底具有基底，在基底上方的下面的氧化物层，在下层上方的上覆层，中间导电层，TiN ARC层和在TiN ARC顶部旋转的顶部OARC层。

公开(公告)号：US6071372A

公开(公告)日：2000-06-06

申请号：US869798

申请日：1997-06-05

申请人： Yan Ye ,  Donald Olgado ,  Avi Tepman ,  Diana Ma ,  Gerald Yin ,  Peter Loewenhardt ,  Jeng H. Hwang ,  Steve Mak

发明人： Yan Ye ,  Donald Olgado ,  Avi Tepman ,  Diana Ma ,  Gerald Yin ,  Peter Loewenhardt ,  Jeng H. Hwang ,  Steve Mak

IPC分类号： H05H1/46 ,  H01J37/32 ,  H01L21/302 ,  C23F1/02 ,  C23C16/00

CPC分类号： H01J37/32477 ,  H01J37/321

摘要： An RF plasma etch reactor having an etch chamber with electrically conductive walls and a protective layer forming the portion of the walls facing the interior of the chamber. The protective layer prevents sputtering of material from the chamber walls by a plasma formed within the chamber. The etch reactor also has an inductive coil antenna disposed within the etch chamber which is used to generate the plasma by inductive coupling. Like the chamber walls, the inductive coil antenna is constructed to prevent sputtering of the material making up the antenna by the plasma. The coil antenna can take on any configuration (e.g. location, shape, orientation) that is necessary to achieve a desired power deposition pattern within the chamber. Examples of potential coil antenna configurations for achieving the desired power deposition pattern include constructing the coil antenna with a unitary or a segmented structure. The segmented structure involves the use of at least two coil segments wherein each segment is electrically isolated from the other segments and connected to a separate RF power signal. The unitary coil antenna or each of the coil segments can have a planar shape, a cylindrical shape, a truncated conical shape, a dome shape, or any combination thereof. The conductive walls are electrically grounded to serve as an electrical ground (i.e. anode) for a workpiece-supporting pedestal which is connected to a source of RF power to create a bias voltage at the surface of the workpiece.

摘要翻译： RF等离子体蚀刻反应器具有具有导电壁的蚀刻室和形成面向腔室内部的部分壁的保护层。 保护层防止在室内形成的等离子体从室壁溅射材料。 蚀刻反应器还具有设置在蚀刻室内的感应线圈天线，其用于通过感应耦合产生等离子体。 类似于室壁，感应线圈天线被构造成防止由等离子体溅射构成天线的材料。 线圈天线​​可以承受在室内实现期望的功率沉积图案所必需的任何配置（例如位置，形状，取向）。 用于实现期望的功率沉积模式的电位线圈天线配置的示例包括以整体或分段结构构造线圈天线。 分段结构涉及使用至少两个线圈段，其中每个段与其它段电隔离并连接到单独的RF功率信号。 单线圈天线或每个线圈段可以具有平面形状，圆柱形，截顶圆锥形，圆顶形或其任何组合。 导电壁电接地以用作工件支撑基座的电接地（即阳极），工件支撑基座连接到RF功率源，以在工件的表面产生偏置电压。

公开(公告)号：US06270687B1

公开(公告)日：2001-08-07

申请号：US09564042

申请日：2000-04-27

申请人： Yan Ye ,  Donald Olgado ,  Avi Tepman ,  Diana Ma ,  Gerald Zheyao Yin ,  Peter Loewenhardt ,  Jeng Hwang ,  Steve S. Y. Mak

发明人： Yan Ye ,  Donald Olgado ,  Avi Tepman ,  Diana Ma ,  Gerald Zheyao Yin ,  Peter Loewenhardt ,  Jeng Hwang ,  Steve S. Y. Mak

IPC分类号： B44C122

CPC分类号： H01J37/32477 ,  H01J37/321

摘要： An RF plasma etch reactor having an etch chamber with electrically conductive walls and a protective layer forming the portion of the walls facing the interior of the chamber. The protective layer prevents sputtering of material from the chamber walls by a plasma formed within the chamber. The etch reactor also has an inductive coil antenna disposed within the etch chamber which is used to generate the plasma by inductive coupling. Like the chamber walls, the inductive coil antenna is constructed to prevent sputtering of the material making up the antenna by the plasma. The coil antenna can take on any configuration (e.g. location, shape, orientation) that is necessary to achieve a desired power deposition pattern within the chamber. Examples of potential coil antenna configurations for achieving the desired power deposition pattern include constructing the coil antenna with a unitary or a segmented structure. The segmented structure involves the use of at least two coil segments wherein each segment is electrically isolated from the other segments and connected to a separate RF power signal. The unitary coil antenna or each of the coil segments can have a planar shape, a cylindrical shape, a truncated conical shape, a dome shape, or any combination thereof. The conductive walls are electrically grounded to serve as an electrical ground (i.e. anode) for a workpiece-supporting pedestal which is connected to a source of RF power to create a bias voltage at the surface of the workpiece.

摘要翻译： RF等离子体蚀刻反应器具有具有导电壁的蚀刻室和形成面向腔室内部的部分壁的保护层。 保护层防止在室内形成的等离子体从室壁溅射材料。 蚀刻反应器还具有设置在蚀刻室内的感应线圈天线，其用于通过感应耦合产生等离子体。 类似于室壁，感应线圈天线被构造成防止由等离子体溅射构成天线的材料。 线圈天线​​可以承受在室内实现期望的功率沉积图案所必需的任何配置（例如位置，形状，取向）。 用于实现期望的功率沉积模式的电位线圈天线配置的示例包括以整体或分段结构构造线圈天线。 分段结构涉及使用至少两个线圈段，其中每个段与其它段电隔离并连接到单独的RF功率信号。 单线圈天线或每个线圈段可以具有平面形状，圆柱形，截顶圆锥形，圆顶形或其任何组合。 导电壁电接地以用作工件支撑基座的电接地（即阳极），工件支撑基座连接到RF功率源，以在工件的表面产生偏置电压。

公开(公告)号：US20070023145A1

公开(公告)日：2007-02-01

申请号：US11531479

申请日：2006-09-13

申请人： Kallol Bera ,  Daniel Hoffman ,  Yan Ye ,  Michael Kutney ,  Douglas Buchberger

发明人： Kallol Bera ,  Daniel Hoffman ,  Yan Ye ,  Michael Kutney ,  Douglas Buchberger

IPC分类号： C23F1/00

CPC分类号： H01J37/32642 ,  H01J37/32082 ,  H01J37/32623 ,  Y10S156/915

摘要： The embodiments of the present invention generally relate to a plasma reactor. In one embodiment, a plasma reactor includes a substrate support is disposed in a vacuum chamber body and coupled to bias power generator. An RF electrode is disposed above the substrate support and coupled to a very high frequency power generator. A conductive annular ring is disposed on the substrate support and has a lower outer wall, an upper outer wall and an inner wall. A step is extends upward and outward from a lower outer wall and inward and downward from the upper outer wall. The inner wall disposed opposite the upper and lower outer wall. In other embodiments, the annular ring may be fabricated from a conductive material, such as silicon carbide and aluminum.

摘要翻译： 本发明的实施方案一般涉及等离子体反应器。 在一个实施例中，等离子体反应器包括基板支撑件设置在真空室主体中并耦合到偏置发电机。 RF电极设置在衬底支撑件上方并耦合到非常高频率的发电机。 导电环形环设置在基板支撑件上，并具有下外壁，上外壁和内壁。 台阶从下外壁向上和向外延伸，并从上外壁向内和向下延伸。 内壁与上外壁和下外壁相对设置。 在其它实施例中，环形环可以由诸如碳化硅和铝的导电材料制成。