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公开(公告)号：US20100024499A1
公开(公告)日：2010-02-04
申请号：US12533819
申请日：2009-07-31
Applicant: Forrest Xu , Daniel Xu
Inventor： Forrest Xu , Daniel Xu
CPC classification number: E05B27/0021 , E05B27/0057 , E05B47/0044 , Y10T70/761 , Y10T70/7932
Abstract: A high security cylinder lock includes a housing comprising a plurality of driver pin bores for disposing spring loaded driver pins; a plug rotatable within the housing comprising a plurality of balancing pin bores for disposing spring loaded balancing pins and a plurality of combination pin bores for disposing combination pins. Each combination pin is sandwiched between a driver pin and a balancing pin. The extension force of the balancing spring at its pre-load length is greater than the extension force of the driver spring at its fully-load length. The compound force causes at least one combination pin partially extended into a corresponding driver pin bore in the housing when the plug is at its first rotational orientation in case of no key engaged. The key profile pushes the balancing pins to move to such position that all mating surfaces of the combination pins and the driver pins to lies onto the shear line of the lock. The balancing pin, balancing spring and balancing spring seal set may be substituted by magnetic balancing pin and magnetic seal pin set.
Abstract translation: 高安全性气缸锁包括：壳体，其包括用于设置弹簧加载的驱动销的多个驱动销孔; 在所述壳体内可旋转的插头，包括多个用于布置弹簧加载的平衡销的平衡销孔和用于布置组合销的多个组合销孔。 每个组合销夹在驱动器引脚和平衡引脚之间。 平衡弹簧在其预加载长度处的拉伸力大于驱动弹簧在其全负载长度上的延伸力。 当没有钥匙接合时，当插头处于其第一旋转方向时，复合力使至少一个组合销部分地延伸到壳体中的相应的驱动销孔中。 关键轮廓推动平衡销移动到这样的位置，即组合销和驱动销的所有配合表面都位于锁的剪切线上。 平衡销，平衡弹簧和平衡弹簧密封套可以由磁力平衡销和磁性密封销组置换。
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公开(公告)号：US20090188287A1
公开(公告)日：2009-07-30
申请号：US12011789
申请日：2008-01-30
Applicant: Forrest Xu , Daniel Xu
Inventor： Forrest Xu , Daniel Xu
IPC: E05B27/08
CPC classification number: E05B27/083 , E05B15/06 , E05B27/0057 , E05B2015/0448 , Y10T70/7565 , Y10T70/7593 , Y10T70/7853 , Y10T70/7932
Abstract: An axial pin tumbler lock including a shell comprising a plurality of chambers formed in a radial pattern around a circle; a rotatable plug containing a through hole for mounting a center post, a main bore for receiving a tubular key, a first plurality of chambers formed in a radial pattern around a circle on its front end and arranged in such a way that each one of the first chambers in the plug extends coaxially with a corresponding chamber on said shell, and a second plurality of chambers formed in a radial pattern around a relatively smaller circle on its rear end, disposed in the shell; a plurality of spring-loaded driver pins disposed in the chambers on said shell; a plurality of spring loaded balance pins disposed in the second chambers and a plurality of combination pins disposed in the first chambers of said plug and initially extended into the chambers on said shell under compound extension force of the balance springs and the driver springs when the plug is at its locking position.
Abstract translation: 一种轴向销翻转开关锁，其包括壳体，所述外壳包括围绕圆形以径向图案形成的多个室; 包括用于安装中心柱的通孔的可旋转插头，用于接收管状键的主孔，在其前端上以圆周形式以径向图案形成的第一多个室，并且以这样的方式布置： 插塞中的第一腔室与所述壳体上的相应腔室同轴地延伸，并且第二多个腔室以径向图案形式围绕其后端上相对较小的圆圈设置在壳体中; 设置在所述壳体的室中的多个弹簧加载的驱动器销; 设置在第二腔室中的多个弹簧加载的平衡销和设置在所述塞子的第一腔室中的多个组合销，并且当平衡弹簧和驱动器弹簧的插头 处于其锁定位置。
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公开(公告)号：US06800563B2
公开(公告)日：2004-10-05
申请号：US09975163
申请日：2001-10-11
Applicant: Daniel Xu
Inventor： Daniel Xu
IPC: H01L21302
CPC classification number: H01L45/06 , G11C2213/52 , G11C2213/72 , H01L27/2409 , H01L45/1233 , H01L45/126 , H01L45/1273 , H01L45/144 , H01L45/16
Abstract: A phase-change memory may have a tapered lower electrode coated with an insulator. The coated, tapered electrode acts as a mask for a self-aligned trench etch to electrically separate adjacent wordlines. In some embodiments, the tapered lower electrode may be formed over a plurality of doped regions, and isotropic etching may be used to taper the electrode as well as part of the underlying doped regions.
Abstract translation: 相变存储器可以具有涂覆有绝缘体的锥形下电极。 涂覆的锥形电极用作用于自对准沟槽蚀刻的掩模，以电隔离相邻字线。 在一些实施例中，锥形下电极可以形成在多个掺杂区域上，并且各向同性蚀刻可以用于使电极逐渐变细以及部分下面的掺杂区域。
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公开(公告)号：US06265292B1
公开(公告)日：2001-07-24
申请号：US09351498
申请日：1999-07-12
Applicant: Krishna Parat , Raghupathy V. Giridhar , Cheng C. Hu , Daniel Xu , Yudong Kim , Glen Wada
Inventor： Krishna Parat , Raghupathy V. Giridhar , Cheng C. Hu , Daniel Xu , Yudong Kim , Glen Wada
IPC: H01L21425
CPC classification number: H01L27/11526 , H01L27/105 , H01L27/11536
Abstract: A method of fabricating a flash memory integrated circuit is described. In an embodiment of the present invention a dielectric filled trench isolation region is formed in a silicon substrate. The dielectric filled trench isolation region isolates a first portion of the silicon substrate from a second portion of the silicon substrate. A portion of the dielectric in the trench is then removed to reveal a portion of the silicon substrate in the trench between the first and second portions of the silicon substrate. Ions are then implanted to form a first source region in the first portion of the silicon substrate and to form a second source region in the second portion of the silicon substrate and to form a doped region in the revealed silicon substrate in the trench wherein the doped region in the trench extends from the first doped source region to the second doped source region.
Abstract translation: 描述了制造闪速存储器集成电路的方法。 在本发明的一个实施例中，在硅衬底中形成介质填充沟槽隔离区。 电介质填充沟槽隔离区域将硅衬底的第一部分与硅衬底的第二部分隔离。 然后去除沟槽中的电介质的一部分，以在硅衬底的第一和第二部分之间的沟槽中露出硅衬底的一部分。 然后植入离子以在硅衬底的第一部分中形成第一源极区域，并在硅衬底的第二部分中形成第二源极区域，并且在沟槽中的透明硅衬底中形成掺杂区域，其中掺杂 沟槽中的区域从第一掺杂源区延伸到第二掺杂源区。
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公开(公告)号：US20170010130A1
公开(公告)日：2017-01-12
申请号：US15113411
申请日：2015-01-20
Applicant: Daniel XU , Iain Alexander ANDERSON , Ho Cheong LO , Thomas Gregory MCKAY , AUCKLAND UNISERVICES LIMITED
Inventor： Daniel Xu , Iain Alexander Anderson , Ho Cheong Lo , Thomas Gregory McKay
CPC classification number: G01D5/241 , A41D19/0027 , B81B3/00 , G01B7/22 , G01L1/14 , G01L1/142 , G01N27/226 , G06F3/014 , G06F3/017 , G06F3/044 , G06F2203/04102 , H01G7/06 , H01L41/042 , H01L41/1132 , H01L41/193
Abstract: The present invention relates to pliable capacitive structures such as dielectric elastomers and similar smart materials which can be used for sensing externally applied strains which can be inferred by the determining the capacitance of the structure/material. There is provided an apparatus comprising a pliable capacitive structure for use in detecting shape or strain changes, the pliable capacitive structure having a dielectric material positioned between two electrodes; means for applying a steady-state voltage across the two electrodes; and means for determining changes in capacitance of the pliable capacitive structure using said steady state voltage.
Abstract translation: 本发明涉及柔性电容结构，例如介电弹性体和类似的智能材料，其可以用于感测外部施加的应变，这可以通过确定结构/材料的电容来推断。 提供了一种包括用于检测形状或应变变化的柔性电容结构的装置，该柔性电容结构具有位于两个电极之间的电介质材料; 用于在两个电极上施加稳态电压的装置; 以及用于使用所述稳态电压来确定柔性电容结构的电容变化的装置。
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Patent Agency Ranking
公开(公告)号：US07161225B2
公开(公告)日：2007-01-09
申请号：US11038336
申请日：2005-01-19
Applicant: Daniel Xu , Chien Chiang
Inventor： Daniel Xu , Chien Chiang
CPC classification number: H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1683
Abstract: A memory cell may include a phase-change material. Adhesion between the phase-change material and a dielectric or other substrate may be enhanced by using an adhesion enhancing interfacial layer. Conduction past the phase-change material through the interfacial layer may be reduced by providing a discontinuity or other feature that reduces or prevents conduction along said interfacial layer.
Abstract translation: 存储单元可以包括相变材料。 可以通过使用粘合增强界面层来增强相变材料与电介质或其它基底之间的粘附。 可以通过提供减少或阻止沿着所述界面层传导的不连续性或其它特征来减少穿过相变材料通过界面层的传导。
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公开(公告)号：US06566700B2
公开(公告)日：2003-05-20
申请号：US09975272
申请日：2001-10-11
Applicant: Daniel Xu
Inventor： Daniel Xu
IPC: H01L27108
CPC classification number: G11C13/0004 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
Abstract: A phase-change memory cell may be formed with a carbon-containing interfacial layer that heats a phase-change material. By forming the phase-change material in contact, in one embodiment, with the carbon containing interfacial layer, the amount of heat that may be applied to the phase-change material, at a given current and temperature, may be increased. In some embodiments, the performance of the interfacial layer at high temperatures may be improved by using a wide band gap semiconductor material such as silicon carbide.
Abstract translation: 相变存储器单元可以形成有加热相变材料的含碳界面层。 通过在一个实施方案中通过形成相变材料与含碳界面层，可以增加在给定电流和温度下施加到相变材料的热量。 在一些实施方案中，可以通过使用宽带隙半导体材料如碳化硅来改善界面层在高温下的性能。
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公开(公告)号：US07685854B2
公开(公告)日：2010-03-30
申请号：US12011789
申请日：2008-01-30
Applicant: Forrest Xu , Daniel Xu
Inventor： Forrest Xu , Daniel Xu
IPC: E05B27/08
CPC classification number: E05B27/083 , E05B15/06 , E05B27/0057 , E05B2015/0448 , Y10T70/7565 , Y10T70/7593 , Y10T70/7853 , Y10T70/7932
Abstract: An axial spring balancing pin tumbler lock includes a cylindrical shell, a plug rotationally disposed within the shell and rotatable by a tubular key. The shell contains a plurality of first pin bores annularly and evenly defined to the axis of the shell for receiving first pins and first springs. The plug has a through aperture for engaging with a elongated spindle, a key bore coaxially defined on front end for receiving the tubular key, a plurality of third pin bores annularly and evenly defined on front end with same depth of the key bore for receiving third pins, and a plurality of second pin bores defined on rear end of the plug for receiving second pins and second springs. Each second pin may contacts the tubular key and one of third pins simultaneously. The extension force of the second spring at its preloaded length is stronger than that of the first spring at its fully loaded length so both second pin and third pin are urged by compound extension force to their most extended position while the first pin is at its most retracted position. The extended third pins bridge the shear plane of the lock, the plug is then blocked from rotating. Since the third pins are isolated from the opening keyway and are not driven by key notches or external force directly, the conventional lock picking or bumping methods must fail.
Abstract translation: 轴向弹簧平衡销翻转开关锁包括圆柱形壳体，旋转地设置在壳体内并通过管状键可旋转的塞子。 壳体包含多个第一销孔，其环形并均匀地限定在壳体的轴线上，用于容纳第一销和第一弹簧。 所述插头具有用于与细长主轴接合的通孔，与前述端部同轴地限定用于接收所述管状键的键孔;多个第三销孔，其环形且均匀地限定在所述键孔的相同深度的前端，用于接收第三 销，以及限定在插头的后端上的多个第二销孔，用于接收第二销和第二弹簧。 每个第二销可以同时接触管状键和第三引脚中的一个。 第二弹簧在其预加载长度处的延伸力比第一弹簧在其全负载长度下的伸长力更强，因此第二销和第三销被复合延伸力推动到其最大延伸位置，而第一销最多 缩回位置。 扩展的第三个销钉桥接锁定的剪切平面，然后阻止插头旋转。 由于第三针脚与开口键槽隔离，并且不直接由钥匙或外力驱动，所以传统的锁定拾取或碰撞方法必须失败。
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公开(公告)号：US07422917B2
公开(公告)日：2008-09-09
申请号：US11102998
申请日：2005-04-11
Applicant: Daniel Xu
Inventor： Daniel Xu
IPC: H01L21/00
CPC classification number: H01L45/06 , G11C2213/52 , G11C2213/72 , H01L27/2409 , H01L45/1233 , H01L45/126 , H01L45/1273 , H01L45/144 , H01L45/16
Abstract: A phase-change memory may have a tapered lower electrode coated with an insulator. The coated, tapered electrode acts as a mask for a self-aligned trench etch to electrically separate adjacent wordlines. In some embodiments, the tapered lower electrode may be formed over a plurality of doped regions, and isotropic etching may be used to taper the electrode as well as part of the underlying doped regions.
Abstract translation: 相变存储器可以具有涂覆有绝缘体的锥形下电极。 涂覆的锥形电极用作用于自对准沟槽蚀刻的掩模，以电隔离相邻字线。 在一些实施例中，锥形下电极可以形成在多个掺杂区域上，并且各向同性蚀刻可以用于使电极逐渐变细以及部分下面的掺杂区域。
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公开(公告)号：US20060063297A1
公开(公告)日：2006-03-23
申请号：US11272308
申请日：2005-11-10
Applicant: Daniel Xu , Tyler Lowery
Inventor： Daniel Xu , Tyler Lowery
IPC: H01L21/00
CPC classification number: H01L45/06 , G11C13/0004 , G11C2213/72 , H01L27/2409 , H01L45/1233 , H01L45/144 , Y10S257/91
Abstract: A memory cell including a phase-change material may have reduced leakage current. The cell may receive signals through a buried wordline in one embodiment. The buried wordline may include a sandwich of a more lightly doped N type region over a more heavily doped N type region over a less heavily doped N type region. As a result of the configuration of the N type regions forming the buried wordline, the leakage current of the buried wordline to the substrate under reverse bias conditions may be significantly reduced.
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