Method and system for providing a side shielded read transducer
    1.
    发明授权
    Method and system for providing a side shielded read transducer 有权
    提供侧屏蔽读取传感器的方法和系统

    公开(公告)号:US08630068B1

    公开(公告)日:2014-01-14

    申请号:US13296970

    申请日:2011-11-15

    IPC分类号: G11B5/39

    摘要: A method and system for providing a magnetic transducer having an air-bearing surface (ABS) is described. The magnetic read transducer includes a first shield, a magnetoresistive sensor, at least one soft magnetic side shield, and a second shield. The magnetoresistive sensor includes a sensor layer having at least one edge in the track width direction along the ABS. The at least one soft magnetic side shield is adjacent to the at least one edge of the sensor layer. The at least one soft magnetic side shield has a full film permeability of at least ten. The magnetoresistive sensor is between the first shield and the second shield and free of an in-stack hard bias layer.

    摘要翻译: 描述了一种用于提供具有空气轴承表面(ABS)的磁换能器的方法和系统。 磁读取传感器包括第一屏蔽,磁阻传感器,至少一个软磁侧屏蔽和第二屏蔽。 磁阻传感器包括具有沿ABS的轨道宽度方向上的至少一个边缘的传感器层。 所述至少一个软磁侧屏蔽件邻近所述传感器层的所述至少一个边缘。 所述至少一个软磁侧屏具有至少十个全透膜度。 磁阻传感器位于第一屏蔽和第二屏蔽之间,并且没有堆叠内的硬偏置层。

    Method and system for providing a read transducer having a reduced shield-to-shield spacing
    2.
    发明授权
    Method and system for providing a read transducer having a reduced shield-to-shield spacing 有权
    用于提供具有减小的屏蔽到屏蔽间隔的读取换能器的方法和系统

    公开(公告)号:US08675318B1

    公开(公告)日:2014-03-18

    申请号:US13302994

    申请日:2011-11-22

    IPC分类号: G11B5/39

    CPC分类号: G11B5/398 G11B5/3912

    摘要: A method and system for providing a read magnetic transducer having an air-bearing surface (ABS) is described. The magnetic read transducer includes a first shield, a read sensor stack, an antiferromagnetic (AFM) tab, and a second shield. The read sensor stack includes a pinned layer, a spacer layer, and a free layer. The spacer layer is nonmagnetic and between the pinned layer and the free layer. A portion of the read sensor stack is at the ABS. The AFM tab is recessed from the ABS and adjacent to a portion of the pinned layer. The read sensor resides between the first shield and the second shield.

    摘要翻译: 描述了一种用于提供具有空气轴承表面(ABS)的读取磁换能器的方法和系统。 磁读取传感器包括第一屏蔽,读取传感器堆叠,反铁磁(AFM)接头和第二屏蔽。 读取传感器堆叠包括钉扎层,间隔层和自由层。 间隔层是非磁性的,在被钉扎层和自由层之间。 读取传感器堆叠的一部分在ABS。 AFM标签从ABS凹入并与被钉扎层的一部分相邻。 读取传感器位于第一屏蔽和第二屏蔽之间。

    Antiferromagnetically-coupled soft bias magnetoresistive read head, and fabrication method therefore
    3.
    发明授权
    Antiferromagnetically-coupled soft bias magnetoresistive read head, and fabrication method therefore 有权
    反铁磁耦合软偏置磁阻读头,因此制造方法

    公开(公告)号:US08611054B1

    公开(公告)日:2013-12-17

    申请号:US13444723

    申请日:2012-04-11

    IPC分类号: G11B5/39

    摘要: A magnetic read transducer is described with a magnetoresistive sensor that has a free layer, and an antiferromagnetically-coupled (AFC) soft bias layer for magnetically biasing the free layer. The free layer has a first edge in a track width direction along an air-bearing surface (ABS). At least a portion of the AFC soft bias layer is conformal to at least a portion of a second edge of the free layer, and situated to form a magnetic moment at an angle with respect to a center line of the free layer. The center line of the free layer extends in the same direction as the free layer first edge that is in the track width direction along the ABS.

    摘要翻译: 用具有自由层的磁阻传感器和用于磁偏置自由层的反铁磁耦合(AFC)软偏置层来描述磁读取传感器。 自由层具有沿空气轴承表面(ABS)的轨道宽度方向上的第一边缘。 AFC柔性偏置层的至少一部分与自由层的第二边缘的至少一部分共形,并且位于相对于自由层的中心线形成一个角度的磁矩。 自由层的中心线沿与ABS沿轨道宽度方向的自由层第一边缘相同的方向延伸。

    Method and system for performing on-wafer testing of heads
    4.
    发明授权
    Method and system for performing on-wafer testing of heads 有权
    执行晶片测试的方法和系统

    公开(公告)号:US08860407B2

    公开(公告)日:2014-10-14

    申请号:US13436732

    申请日:2012-03-30

    摘要: A method and system for testing a read transducer are described. The read transducer includes a read sensor fabricated on a wafer. A system includes a test structure that resides on the wafer. The test structure includes a test device and a heater. The test device corresponds to the read sensor. The heater is in proximity to the test device and is configured to heat the test device substantially without heating the read sensor. Thus, the test structure allows for on-wafer testing of the test device at a plurality of temperatures above an ambient temperature.

    摘要翻译: 描述了用于测试读取换能器的方法和系统。 读取换能器包括制造在晶片上的读取传感器。 系统包括驻留在晶片上的测试结构。 测试结构包括测试设备和加热器。 测试装置对应于读取传感器。 加热器靠近测试装置,并且被配置为基本上加热测试装置而不加热读取传感器。 因此,测试结构允许在高于环境温度的多个温度下对测试装置进行片上测试。

    Method and system for providing a read transducer having soft and hard magnetic bias structures
    7.
    发明授权
    Method and system for providing a read transducer having soft and hard magnetic bias structures 有权
    用于提供具有软和硬磁偏置结构的读取换能器的方法和系统

    公开(公告)号:US08760823B1

    公开(公告)日:2014-06-24

    申请号:US13332313

    申请日:2011-12-20

    IPC分类号: G11B5/39

    摘要: A method and system provide a magnetic transducer having an air-bearing surface (ABS). The magnetic transducer includes a first shield, a read sensor, at least one soft magnetic bias structure and at least one hard bias structure. The read sensor includes a sensor layer that has at least one edge in the track width direction along the ABS. The soft magnetic bias structure(s) are adjacent to the edge(s) of the sensor layer. The soft magnetic bias structure has a first permeability. The soft bias structure(s) are between the read sensor and the hard bias structure(s). The hard bias structure(s) are adjacent to a portion of the soft bias structure(s) and have a second permeability. The first permeability is at least ten multiplied by the second permeability.

    摘要翻译: 一种方法和系统提供具有空气轴承表面(ABS)的磁换能器。 磁换能器包括第一屏蔽,读取传感器,至少一个软磁偏置结构和至少一个硬偏压结构。 读取传感器包括沿ABS沿轨道宽度方向具有至少一个边缘的传感器层。 软磁偏置结构与传感器层的边缘相邻。 软磁偏置结构具有第一磁导率。 柔性偏置结构位于读取传感器和硬偏置结构之间。 硬偏压结构与软偏压结构的一部分相邻并且具有第二磁导率。 第一渗透率至少为乘以第二渗透率的十倍。

    Magnetoresistive sensor with sub-layering of pinned layers
    8.
    发明授权
    Magnetoresistive sensor with sub-layering of pinned layers 有权
    磁阻传感器,分层钉扎层

    公开(公告)号:US08675316B2

    公开(公告)日:2014-03-18

    申请号:US12101761

    申请日:2008-04-11

    IPC分类号: G11B5/33

    摘要: Methods and apparatus provide magnetoresistance sensors. A tunneling magnetoresistance (TMR) sensor may include configurations that are arranged as a top TMR stack. One of two antiparallel layers of pinned layers within the TMR stack may be subdivided by a spacer layer. Tantalum may form the spacer layer that is inserted in a reference layer, which is one of the pinned layers and is located between a barrier layer and an antiparallel coupling layer that enables antiparallel coupling between the reference layer and a keeper layer of the pinned layers. The barrier layer deposited on a free layer of the TMR stacks separates the pinned layers from the free layer such that TMR effects are detectable with the sensors.

    摘要翻译: 方法和装置提供磁阻传感器。 隧道磁阻(TMR)传感器可以包括被布置为顶部TMR堆叠的配置。 TMR堆叠中的钉扎层的两个反平行层之一可以被间隔层细分。 钽可以形成插入到参考层中的间隔层,该参考层是被钉扎层之一,并且位于阻挡层和反平行耦合层之间,其使参考层和被钉扎层的保持层之间能够反平行耦合。 沉积在TMR堆叠的自由层上的阻挡层将被钉扎层与自由层分离,使得TMR效应可以用传感器检测。

    Test device and method for measurement of tunneling magnetoresistance properties of a manufacturable wafer by the current-in-plane-tunneling technique
    10.
    发明申请
    Test device and method for measurement of tunneling magnetoresistance properties of a manufacturable wafer by the current-in-plane-tunneling technique 有权
    用于通过平面内隧道技术测量可制造晶片的隧道磁阻特性的测试装置和方法

    公开(公告)号:US20090168254A1

    公开(公告)日:2009-07-02

    申请号:US12006322

    申请日:2007-12-31

    IPC分类号: G11B5/33

    摘要: A combined manufacturable wafer and test device for measuring a tunneling-magnetoresistance property of a tunneling-magnetoresistance, sensor-layer structure. The combined manufacturable wafer and test device comprises a tunneling-magnetoresistance, sensor-layer structure disposed on a substrate. The combined manufacturable wafer and test device also comprises a plurality of partially fabricated tunneling-magnetoresistance sensors; at least one of the partially fabricated tunneling-magnetoresistance sensors is disposed at one of a plurality of first locations. The test device is disposed on the substrate at a second location different from the plurality of first locations. The test device allows measurement of the tunneling-magnetoresistance property of the tunneling-magnetoresistance, sensor-layer structure using a current-in-plane-tunneling technique.

    摘要翻译: 用于测量隧道 - 磁阻,传感器层结构的隧道 - 磁阻特性的组合制造晶片和测试装置。 组合的可制造晶片和测试装置包括设置在基板上的隧道 - 磁阻,传感器层结构。 组合的可制造晶片和测试装置还包括多个部分制造的隧道 - 磁阻传感器; 部分制造的隧道 - 磁阻传感器中的至少一个设置在多个第一位置中的一个位置。 测试装置在不同于多个第一位置的第二位置处设置在基板上。 测试装置允许使用平面内隧道技术测量隧道 - 磁阻,传感器层结构的隧道 - 磁阻特性。