公开(公告)号：US20070075420A1

公开(公告)日：2007-04-05

申请号：US11242176

申请日：2005-09-30

申请人： Daoqiang Lu ,  Chuan Hu ,  Gilroy Vandentop ,  Shriram Ramanathan ,  Rajashree Baskaran ,  Valery Dubin

发明人： Daoqiang Lu ,  Chuan Hu ,  Gilroy Vandentop ,  Shriram Ramanathan ,  Rajashree Baskaran ,  Valery Dubin

IPC分类号： H01L23/34

CPC分类号： H01L24/83 ,  H01L21/4871 ,  H01L23/3735 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/83 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/18161 ,  H01L2924/19106 ,  H01L2924/00

摘要： A method of fabricating a microelectronic package having a direct contact heat spreader, a package formed according to the method, a die-heat spreader combination formed according to the method, and a system incorporating the package. The method comprises metallizing a backside of a microelectronic die to form a heat spreader body directly contacting and fixed to the backside of the die thus yielding a die-heat spreader combination. The package includes the die-heat spreader combination and a substrate bonded to the die.

摘要翻译： 一种制造具有直接接触散热器的微电子封装的方法，根据该方法形成的封装，根据该方法形成的模具散热器组合以及包含封装的系统。 该方法包括金属化微电子管芯的背面以形成直接接触并固定到管芯背面的散热器主体，从而产生模具散热器组合。 该封装包括模具散热器组合和与模具结合的衬底。

公开(公告)号：US06933171B2

公开(公告)日：2005-08-23

申请号：US10691136

申请日：2003-10-21

申请人： Ming Fang ,  Valery Dubin ,  Daoqiang Lu

发明人： Ming Fang ,  Valery Dubin ,  Daoqiang Lu

IPC分类号： G02B6/42 ,  H01L21/00 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01L21/60 ,  H01L23/48 ,  H01L23/485 ,  H01L23/52 ,  H01L27/15 ,  H01L29/267 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L24/16 ,  G02B6/4204 ,  G02B6/4232 ,  H01L24/11 ,  H01L24/81 ,  H01L2224/1134 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/16 ,  H01L2224/81193 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/15151 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2224/29099

摘要： The invention provides bumps between a die and a substrate with a height greater than or equal to a height of a waveguide between the die and the substrate. The bumps may be formed on a die prior to that die being singulated from a wafer.

公开(公告)号：US07279720B2

公开(公告)日：2007-10-09

申请号：US10864188

申请日：2004-06-08

申请人： Ming Fang ,  Valery Dubin ,  Daoqiang Lu

发明人： Ming Fang ,  Valery Dubin ,  Daoqiang Lu

IPC分类号： H01L33/00

CPC分类号： H01L24/16 ,  G02B6/4204 ,  G02B6/4232 ,  H01L24/11 ,  H01L24/81 ,  H01L2224/1134 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/16 ,  H01L2224/81193 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/15151 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2224/29099

摘要： The invention provides bumps between a die and a substrate with a height greater than or equal to a height of a waveguide between the die and the substrate. The bumps may be formed on a die prior to that die being singulated from a wafer.

摘要翻译： 本发明提供了一种具有高于或等于管芯和衬底之间的波导高度的管芯和衬底之间的凸起。 在从芯片被切割成晶片之前，可以在模具上形成凸块。

公开(公告)号：US20050082552A1

公开(公告)日：2005-04-21

申请号：US10864188

申请日：2004-06-08

申请人： Ming Fang ,  Valery Dubin ,  Daoqiang Lu

发明人： Ming Fang ,  Valery Dubin ,  Daoqiang Lu

IPC分类号： G02B6/42 ,  H01L21/00 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01L21/60 ,  H01L23/48 ,  H01L23/485 ,  H01L23/52 ,  H01L27/15 ,  H01L29/267 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L24/16 ,  G02B6/4204 ,  G02B6/4232 ,  H01L24/11 ,  H01L24/81 ,  H01L2224/1134 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/16 ,  H01L2224/81193 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/15151 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2224/29099

摘要： The invention provides bumps between a die and a substrate with a height greater than or equal to a height of a waveguide between the die and the substrate. The bumps may be formed on a die prior to that die being singulated from a wafer.

公开(公告)号：US20050082551A1

公开(公告)日：2005-04-21

申请号：US10691136

申请日：2003-10-21

申请人： Ming Fang ,  Valery Dubin ,  Daoqiang Lu

发明人： Ming Fang ,  Valery Dubin ,  Daoqiang Lu

IPC分类号： G02B6/42 ,  H01L21/00 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01L21/60 ,  H01L23/48 ,  H01L23/485 ,  H01L23/52 ,  H01L27/15 ,  H01L29/267 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L24/16 ,  G02B6/4204 ,  G02B6/4232 ,  H01L24/11 ,  H01L24/81 ,  H01L2224/1134 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/16 ,  H01L2224/81193 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/15151 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2224/29099

摘要： The invention provides bumps between a die and a substrate with a height greater than or equal to a height of a waveguide between the die and the substrate. The bumps may be formed on a die prior to that die being singulated from a wafer.

摘要翻译： 本发明提供了一种具有高于或等于管芯和衬底之间的波导高度的管芯和衬底之间的凸起。 在从芯片被切割成晶片之前，可以在模具上形成凸块。

公开(公告)号：US09105628B1

公开(公告)日：2015-08-11

申请号：US13434688

申请日：2012-03-29

申请人： Valery Dubin

发明人： Valery Dubin

IPC分类号： H01L23/498 ,  H01L21/48 ,  H01L21/768 ,  H01L23/538

CPC分类号： H01L23/49827 ,  B81B7/007 ,  B81B2207/096 ,  H01L21/486 ,  H01L21/76831 ,  H01L21/76879 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5384 ,  H01L2224/02372 ,  H01L2224/05009 ,  H01L2224/05025 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/08146 ,  H01L2224/08165 ,  H01L2224/08235 ,  H01L2224/13 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/16146 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2225/06548 ,  H01L2924/1461 ,  H01L2924/00

摘要： Through substrate via (TSuV) structures and method of making the same are disclosed herein. In embodiments, TSuV structures are metal filled selectively to avoid forming significant metal overburden on non-via surfaces of the substrate. In certain embodiments, post-fill metal removal/planarization operations are eliminated for reduced process complexity and manufacturing cost. In embodiments, selective metal fill entails selective electroless or electrolytic deposition. Both front side and back side selective deposition methods are described along with features of through substrate via structures made with such methods.

摘要翻译： 通过衬底通孔（TSuV）结构及其制备方法在此公开。 在实施例中，TSuV结构被选择性地金属填充以避免在衬底的非通孔表面上形成显着的金属覆盖层。 在某些实施例中，消除后填充金属去除/平面化操作以降低工艺复杂性和制造成本。 在实施例中，选择性金属填充需要选择性化学镀或电解沉积。 还描述了前侧和后侧选择性沉积方法以及通过这种方法制成的通过基底通孔结构的特征。

公开(公告)号：US20140231986A1

公开(公告)日：2014-08-21

申请号：US14260064

申请日：2014-04-23

申请人： Valery Dubin

发明人： Valery Dubin

IPC分类号： B81B7/00 ,  H01L23/498

CPC分类号： H01L23/49827 ,  B81B7/007 ,  B81B2207/096 ,  H01L21/486 ,  H01L21/76831 ,  H01L21/76879 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5384 ,  H01L2224/02372 ,  H01L2224/05009 ,  H01L2224/05025 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/08146 ,  H01L2224/08165 ,  H01L2224/08235 ,  H01L2224/13 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/16146 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2225/06548 ,  H01L2924/1461 ,  H01L2924/00

摘要： Through substrate via (TSuV) structures and method of making the same are disclosed herein. In embodiments, TSuV structures are metal filled selectively to avoid forming significant metal overburden on non-via surfaces of the substrate. In certain embodiments, post-fill metal removal/planarization operations are eliminated for reduced process complexity and manufacturing cost. In embodiments, selective metal fill entails selective electroless or electrolytic deposition. Both front side and back side selective deposition methods are described along with features of through substrate via structures made with such methods.

摘要翻译： 通过衬底通孔（TSuV）结构及其制备方法在此公开。 在实施例中，TSuV结构被选择性地金属填充以避免在衬底的非通孔表面上形成显着的金属覆盖层。 在某些实施例中，消除后填充金属去除/平面化操作以降低工艺复杂性和制造成本。 在实施例中，选择性金属填充需要选择性化学镀或电解沉积。 还描述了前侧和后侧选择性沉积方法以及通过这种方法制成的通过基底通孔结构的特征。

公开(公告)号：US20070298608A1

公开(公告)日：2007-12-27

申请号：US11897862

申请日：2007-08-31

申请人： Steven Johnston ,  Valery Dubin ,  Michael McSwiney ,  Peter Moon

发明人： Steven Johnston ,  Valery Dubin ,  Michael McSwiney ,  Peter Moon

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/28562 ,  H01L21/288 ,  H01L21/76849 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Noble metal may be used as a non-oxidizing diffusion barrier to prevent diffusion from copper lines. A diffusion barrier may be formed of a noble metal formed over an adhesion promoting layer or by a noble metal cap over an oxidizable diffusion barrier. The copper lines may also be covered with a noble metal.

公开(公告)号：US20070267297A1

公开(公告)日：2007-11-22

申请号：US11383925

申请日：2006-05-17

申请人： Rohan Akolkar ,  Valery Dubin

发明人： Rohan Akolkar ,  Valery Dubin

IPC分类号： C25D5/02

CPC分类号： C25D3/38 ,  H01L21/2885 ,  H01L21/76879

摘要： A method comprising forming an interconnection opening through a dielectric material to a contact point; and electroplating a interconnection comprising copper in the contact opening using an electroplating bath comprising an alkoxylated sulfopropylated alkylamine. A method comprising forming an interconnection opening through a dielectric material to a contact point; lining the interconnection opening with a barrier layer and a seed layer; and electroplating an interconnection comprising copper in the contact opening using an electroplating bath comprising an alkoxylated sulfopropylated alkylamine.

摘要翻译： 一种方法，包括通过介电材料形成到接触点的互连开口; 以及使用包含烷氧基化磺丙基化烷基胺的电镀浴在接触开口中电镀包含铜的互连。 一种方法，包括通过介电材料形成到接触点的互连开口; 用隔离层和种子层对互连开口进行衬里; 以及使用包含烷氧基化磺丙基化烷基胺的电镀浴在接触开口中电镀包含铜的互连。

公开(公告)号：US20060131750A1

公开(公告)日：2006-06-22

申请号：US11336169

申请日：2006-01-19

申请人： Valery Dubin ,  Peter Moon

发明人： Valery Dubin ,  Peter Moon

IPC分类号： H01L23/52 ,  H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/2885 ,  H01L21/76873 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention includes a method of providing a substrate; sequentially forming a seed layer over the substrate and forming a protection layer over the seed layer; and sequentially removing the protection layer and forming a conductor over the seed layer. The present invention further includes a structure having a substrate, the substrate having a device; an insulator disposed over the substrate, the insulator having an opening, the opening disposed over the device; a barrier layer disposed over the opening; a seed layer disposed over the barrier layer; and a protection layer disposed over the seed layer.