摘要:
An optical switch that includes optical paths organized into a set of M input optical paths and a set of N output optical paths, where at least one of M and N is greater than unity. The optical switch additionally includes a faceted mirror corresponding to each of the M input optical paths and including N facets and a faceted mirror corresponding to each of the N output optical paths and including M facets. Finally, the optical switch includes a moving mechanism coupled to each faceted mirror to step the faceted mirror linearly in a direction orthogonal to the optical paths to selectively align one of the facets of the faceted mirror with the one of the optical paths with which the faceted mirror is associated. The facets of each of the faceted mirror corresponding to one of the sets of optical paths, i.e., the set of input optical paths or the set of output optical paths, are preferably angled to reflect light towards a different one of the faceted mirrors corresponding to the other of the sets of optical paths, i.e., the set of output optical paths or the set of input optical paths, respectively.
摘要:
An optical switch that includes optical paths organized into a set of M input optical paths and a set of N output optical paths. The optical switch additionally includes a faceted mirror corresponding to each of the M input optical paths and including N facets and a faceted mirror corresponding to each of the N output optical paths and including M facets. Finally, the optical switch includes a moving mechanism coupled to each faceted mirror to step the faceted mirror to selectively align one of the facets of the faceted mirror with the one of the optical paths with which the faceted mirror is associated. The facets of each of the faceted mirrors corresponding to one of the sets of optical paths, i.e., the set of input optical paths or the set of output optical paths, are preferably angled to reflect light towards a different one of the faceted mirrors corresponding to the other of the sets of optical paths, i.e., the set of output optical paths or the set of input optical paths, respectively.
摘要:
A networking method of single frequency network in a TD-SCDMA system includes the steps of: (1) deciding a networking configuration scheme by a universal mobile telecommunications system terrestrial radio access network (UTRAN), (2) based on the decided networking configuration scheme, configuring an intra-frequency cell info list information element and an inter-frequency cell info list information element in system information and measurement control messages by the UTRAN, (3) transmitting signals over a servicing area by the UTRAN, and (4) receiving the system information and measurement control messages by a user equipment (UE) from the UTRAN, acquiring working mode configuration information of each frequency and each timeslot of a serving cell and neighboring cells, and judging whether there are duplicated cell information elements in the intra-frequency cell info list information element or the inter-frequency cell info list information element.
摘要:
A solar energy collecting device includes a rotation axis to be mounted parallel to the earth's polar axis, a solar energy collector mounted for rotation around the rotation axis at a predetermined rotation speed, the solar energy collector defining a tilt angle with respect to the rotation axis, and a tilt angle adjustment mechanism for automatically and intermittently adjusting the tilt angle. Various configurations of the solar energy collector are possible, and the rotation speed may be one revolution per day or half a revolution per day depending on the solar energy collector configuration. Many drive modes are possible, including rotating continuously throughout a day or rotating during daylight hours and rotating backward or forward at night. The tilt angle adjustment mechanism includes a handle fixed to the solar energy collector and a tilt angle change guide.
摘要:
Bubble stability within an optical switch is enhanced by controlling the expansion or movement of a bubble from a liquid-containing trench into available adjacent spacing. Typically, the adjacent spacing is formed between an optical waveguide substrate and a heater substrate, where the heater substrate includes a microheater for forming the bubble. The bubble enhancement is provided by intentionally altering surface features along at least one of the substrates.
摘要:
In the field of imaging, various components may contribute to a loss in resolution at higher spatial frequencies, both horizontally and vertically. Higher spatial frequencies may occur at the edge of an image, where there may be a large transition in the signal output between adjacent pixels. To compensate, an edge enhancement method that produces overshoots in the transitions of the video image signal is used. One of the problems with the edge enhancement method is that the noise in the input signal may not be adequately suppressed. To suppress the background noise in the video image signal while still performing the desired edge enhancement function, biasing circuitry may be used to suppress the smaller transitions in the input signal. In particular, the biasing circuitry may be placed in the signal path between the output of a first delay line and the noninverting inputs of two of the signal amplifiers. In this manner, the smaller transitions in the signal which represent background noise may be suppressed, while the edges of the video image signal are still enhanced.
摘要:
A method of making high voltage complementary bipolar and BiCMOS devices on a common substrate. The bipolar devices are vertical NPN and PNP transistors having the same structure. The fabrication process utilizes trench isolation and thus is scalable. The process uses two epitaxial silicon layers to form the high voltage NPN collector, with the PNP collector formed from a p-well diffused into the two epitaxial layers. The collector contact resistance is minimized by the use of sinker up/down structures formed at the interface of the two epitaxial layers. The process minimizes the thermal budget and therefore the up diffusion of the NPN and PNP buried layers. This maximizes the breakdown voltage at the collector-emitter junction for a given epitaxial thickness. The epitaxial layers may be doped as required depending upon the specifications for the high voltage NPN device. The process is compatible with the fabrication of low voltage devices, which can be formed by placing the sinker regions under the emitter region. The thicknesses of the two epitaxial layers may be adjusted as required depending upon the specifications for the low voltage devices.
摘要:
A method of fabricating a switching element or a matrix of switching elements includes providing a waveguide substrate having at least two waveguides that intersect at a trench such that optical coupling between the waveguides is dependent upon the presence or absence of an index-matching fluid at the intersection of the waveguides with the trench. Fluid is supplied to the trench via a fluid fill-hole that extends through a heater substrate in a direction that is generally perpendicular to a substrate surface on which at least one heater is fabricated. In the preferred embodiment, the fluid fill-hole is formed in a step of inductively coupled plasma (ICP) reactive ion etching (RIE). The waveguide substrate having at least two waveguides and the heater substrate having the heaters and the fill-hole are bonded together after the substrates are aligned such that the trench is in fluid communication with at least one fluid fill-hole and is in thermal communication with at least one heater. Optical fibers are then coupled to the waveguides. Preferably, a structurally weakened edge portion is formed during the ICP RIE step so that the edge portion can be removed after the two substrates are bonded, allowing uninhibited access of the optical fibers to the waveguides.
摘要:
An active pixel for use in an imaging array and formed in a semiconductor substrate having a first conductivity type. The active pixel comprises: a pinned photodiode formed in the semiconductor substrate; a transfer well having a second conductivity type formed in the substrate, the transfer well being adjacent to the pinned photodiode; a transfer gate adjacent the transfer well, the transfer gate for controlling the flow of a signal charge from the pinned photodiode through the transfer well and under the transfer gate; and an output well adjacent the transfer gate for receiving the signal charge and routing the signal charge to output circuitry.
摘要:
An isolation method for separating active regions in a semiconductor substrate by combining field oxide formation with trench isolation is disclosed. Deep trenches are etched in a silicon substrate. An oxide layer is deposited over the entire substrate such that the oxide layer also fills the trenches that have been etched. A layer of polysilicon is deposited over the wafer and etched back to form polysilicon spacers. These polysilicon spacers are used to align a photoresist mask that is used to etch the oxide overlying the active regions of the substrate, thereby resulting in fully planarized isolation regions with fully walled active regions.