公开(公告)号：US20060166414A1

公开(公告)日：2006-07-27

申请号：US11378101

申请日：2006-03-17

申请人： David Carlson ,  Satheesh Kuppurao ,  Errol Antonio Sanchez ,  Howard Beckford ,  Yihwan Kim

发明人： David Carlson ,  Satheesh Kuppurao ,  Errol Antonio Sanchez ,  Howard Beckford ,  Yihwan Kim

IPC分类号： H01L21/84 ,  H01L21/8238 ,  H01L21/336 ,  H01L21/20 ,  H01L21/31

CPC分类号： H01L29/7834 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/76243 ,  H01L21/823814 ,  H01L21/8249 ,  H01L29/165 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848 ,  Y10S438/969

摘要： A method for epitaxially forming a silicon-containing material on a substrate surface utilizes a halogen containing gas as both an etching gas as well as a carrier gas through adjustments of the process chamber temperature and pressure. It is beneficial to utilize HCl as the halogen containing gas because converting HCl from a carrier gas to an etching gas can easily be performed by adjusting the chamber pressure.

公开(公告)号：US07560352B2

公开(公告)日：2009-07-14

申请号：US11378101

申请日：2006-03-17

申请人： David K. Carlson ,  Satheesh Kuppurao ,  Errol Antonio C. Sanchez ,  Howard Beckford ,  Yihwan Kim

发明人： David K. Carlson ,  Satheesh Kuppurao ,  Errol Antonio C. Sanchez ,  Howard Beckford ,  Yihwan Kim

IPC分类号： H01L21/336

CPC分类号： H01L29/7834 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/76243 ,  H01L21/823814 ,  H01L21/8249 ,  H01L29/165 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848 ,  Y10S438/969

摘要： A method for epitaxially forming a silicon-containing material on a substrate surface utilizes a halogen containing gas as both an etching gas as well as a carrier gas through adjustments of the process chamber temperature and pressure. It is beneficial to utilize HCl as the halogen containing gas because converting HCl from a carrier gas to an etching gas can easily be performed by adjusting the chamber pressure.

摘要翻译： 在衬底表面上外延形成含硅材料的方法通过调节处理室的温度和压力，利用含卤素气体作为蚀刻气体以及载气。 使用HCl作为含卤素气体是有利的，因为通过调节室压力可以容易地将HCl从载气转化为蚀刻气体。

公开(公告)号：US07494545B2

公开(公告)日：2009-02-24

申请号：US11346804

申请日：2006-02-03

申请人： Andrew Lam ,  Yihwan Kim ,  Satheesh Kuppurao ,  See-Eng Phan ,  Xinliang Lu ,  Chien-Teh Kao

发明人： Andrew Lam ,  Yihwan Kim ,  Satheesh Kuppurao ,  See-Eng Phan ,  Xinliang Lu ,  Chien-Teh Kao

IPC分类号： C30B25/12

CPC分类号： C23C16/452 ,  C23C16/0236 ,  C23C16/505 ,  H01L21/31116 ,  H01L21/67069

摘要： An epitaxial deposition process including a dry etch process, followed by an epitaxial deposition process is disclosed. The dry etch process involves placing a substrate to be cleaned into a processing chamber to remove surface oxides. A gas mixture is introduced into a plasma cavity, and the gas mixture is energized to form a plasma of reactive gas in the plasma cavity. The reactive gas enters into the processing chamber and reacts with the substrate, forming a thin film. The substrate is heated to vaporize the thin film and expose an epitaxy surface. The epitaxy surface is substantially free of oxides. Epitaxial deposition is then used to form an epitaxial layer on the epitaxy surface.

摘要翻译： 公开了一种外延沉积工艺，其包括干蚀刻工艺，随后进行外延沉积工艺。 干蚀刻工艺涉及将要清洗的基底放置在处理室中以去除表面氧化物。 将气体混合物引入等离子体空腔中，并且气体混合物被激发以在等离子体腔中形成反应气体的等离子体。 反应气体进入处理室并与基板反应，形成薄膜。 将衬底加热以蒸发薄膜并暴露外延表面。 外延表面基本上不含氧化物。 然后使用外延沉积在外延表面上形成外延层。

公开(公告)号：US08728944B2

公开(公告)日：2014-05-20

申请号：US13177409

申请日：2011-07-06

申请人： Satheesh Kuppurao ,  Manish Hemkar ,  Vinh Tran ,  Yihwan Kim

发明人： Satheesh Kuppurao ,  Manish Hemkar ,  Vinh Tran ,  Yihwan Kim

IPC分类号： H01L21/311

CPC分类号： H01L21/02052 ,  H01L21/02046 ,  H01L21/02238 ,  H01L21/67109 ,  H01L21/6719

摘要： Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include exposing a substrate having an oxide layer thereon to an oxidizing source. The oxidizing source oxidizes an upper portion of the substrate beneath the oxide layer to form an oxide layer having an increased thickness. The oxide layer with the increased thickness is then removed to expose a clean surface of the substrate. The removal of the oxide layer generally includes removal of contaminants present in and on the oxide layer, especially those contaminants present at the interface of the oxide layer and the substrate. An epitaxial layer may then be formed on the clean surface of the substrate.

摘要翻译： 本发明的实施方案一般涉及从基底表面去除污染物和天然氧化物的方法。 所述方法通常包括将其上具有氧化物层的衬底暴露于氧化源。 氧化源氧化氧化层下面的衬底的上部以形成厚度增加的氧化物层。 然后去除具有增加的厚度的氧化物层以暴露衬底的干净的表面。 去除氧化物层通常包括去除存在于氧化物层中和氧化物层上的污染物，特别是存在于氧化物层和衬底的界面处的污染物。 然后可以在衬底的清洁表面上形成外延层。

公开(公告)号：US20120034761A1

公开(公告)日：2012-02-09

申请号：US13177409

申请日：2011-07-06

申请人： Satheesh Kuppurao ,  Manish Hemkar ,  Vinh Tran ,  Yihwan Kim

发明人： Satheesh Kuppurao ,  Manish Hemkar ,  Vinh Tran ,  Yihwan Kim

IPC分类号： H01L21/322

CPC分类号： H01L21/02052 ,  H01L21/02046 ,  H01L21/02238 ,  H01L21/67109 ,  H01L21/6719

摘要： Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include exposing a substrate having an oxide layer thereon to an oxidizing source. The oxidizing source oxidizes an upper portion of the substrate beneath the oxide layer to form an oxide layer having an increased thickness. The oxide layer with the increased thickness is then removed to expose a clean surface of the substrate. The removal of the oxide layer generally includes removal of contaminants present in and on the oxide layer, especially those contaminants present at the interface of the oxide layer and the substrate. An epitaxial layer may then be formed on the clean surface of the substrate.

摘要翻译： 本发明的实施方案一般涉及从基底表面去除污染物和天然氧化物的方法。 所述方法通常包括将其上具有氧化物层的衬底暴露于氧化源。 氧化源氧化氧化层下面的衬底的上部以形成厚度增加的氧化物层。 然后去除具有增加的厚度的氧化物层以暴露衬底的干净的表面。 去除氧化物层通常包括去除存在于氧化物层中和氧化物层上的污染物，特别是存在于氧化物层和衬底的界面处的污染物。 然后可以在衬底的清洁表面上形成外延层。

公开(公告)号：US09058988B2

公开(公告)日：2015-06-16

申请号：US12717266

申请日：2010-03-04

申请人： Jean R. Vatus ,  Jinsong Tang ,  Yihwan Kim ,  Satheesh Kuppurao ,  Errol Sanchez

发明人： Jean R. Vatus ,  Jinsong Tang ,  Yihwan Kim ,  Satheesh Kuppurao ,  Errol Sanchez

IPC分类号： H01L21/00 ,  H01L21/02 ,  C23C16/02 ,  C23C16/24

CPC分类号： H01L21/02538 ,  C23C16/0245 ,  C23C16/24 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02661

摘要： Methods of depositing layers having reduced interfacial contamination are disclosed herein. The inventive methods may advantageously reduce contamination at the interface between deposited layers, for example, between a deposited layer and an underlying substrate or film. In some embodiments, a method of depositing a layer may include annealing a silicon-containing layer having a first layer disposed thereon in a reducing atmosphere; removing the first layer using an etching process to expose the silicon-containing layer after annealing; and depositing a second layer on the exposed silicon-containing layer.

摘要翻译： 本文公开了沉积具有减小的界面污染的层的方法。 本发明的方法可以有利地减少沉积层之间的界面处的污染，例如沉积层和下面的基底或膜之间的污染。 在一些实施例中，沉积层的方法可以包括在还原气氛中退火其上设置有第一层的含硅层; 使用蚀刻工艺除去第一层，以在退火后露出含硅层; 以及在暴露的含硅层上沉积第二层。

公开(公告)号：US20070181057A1

公开(公告)日：2007-08-09

申请号：US11346804

申请日：2006-02-03

申请人： Andrew Lam ,  Yihwan Kim ,  Satheesh Kuppurao ,  See-Eng Phan ,  Xinliang Lu ,  Chien-Teh Kao

发明人： Andrew Lam ,  Yihwan Kim ,  Satheesh Kuppurao ,  See-Eng Phan ,  Xinliang Lu ,  Chien-Teh Kao

IPC分类号： C30B23/00 ,  C23C16/00 ,  C30B25/00 ,  C30B28/14

CPC分类号： C23C16/452 ,  C23C16/0236 ,  C23C16/505 ,  H01L21/31116 ,  H01L21/67069

摘要： An epitaxial deposition process including a dry etch process, followed by an epitaxial deposition process is disclosed. The dry etch process involves placing a substrate to be cleaned into a processing chamber to remove surface oxides. A gas mixture is introduced into a plasma cavity, and the gas mixture is energized to form a plasma of reactive gas in the plasma cavity. The reactive gas enters into the processing chamber and reacts with the substrate, forming a thin film. The substrate is heated to vaporize the thin film and expose an epitaxy surface. The epitaxy surface is substantially free of oxides. Epitaxial deposition is then used to form an epitaxial layer on the epitaxy surface.

摘要翻译： 公开了一种外延沉积工艺，其包括干蚀刻工艺，随后进行外延沉积工艺。 干蚀刻工艺涉及将要清洗的基底放置在处理室中以去除表面氧化物。 将气体混合物引入等离子体空腔中，并且气体混合物被激发以在等离子体腔中形成反应气体的等离子体。 反应气体进入处理室并与基板反应，形成薄膜。 将衬底加热以蒸发薄膜并暴露外延表面。 外延表面基本上不含氧化物。 然后使用外延沉积在外延表面上形成外延层。

公开(公告)号：US09012328B2

公开(公告)日：2015-04-21

申请号：US13193566

申请日：2011-07-28

申请人： Zhiyuan Ye ,  Xuebin Li ,  Saurabh Chopra ,  Yihwan Kim

发明人： Zhiyuan Ye ,  Xuebin Li ,  Saurabh Chopra ,  Yihwan Kim

IPC分类号： H01L21/311 ,  H01L21/02 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8238

CPC分类号： H01L29/36 ,  H01L21/0245 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02664 ,  H01L21/823814 ,  H01L29/167 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7834

摘要： Embodiments of the present invention generally relate to methods of forming epitaxial layers and devices having epitaxial layers. The methods generally include forming a first epitaxial layer including phosphorus and carbon on a substrate, and then forming a second epitaxial layer including phosphorus and carbon on the first epitaxial layer. The second epitaxial layer has a lower phosphorus concentration than the first epitaxial layer, which allows for selective etching of the second epitaxial layer and undesired amorphous silicon or polysilicon deposited during the depositions. The substrate is then exposed to an etchant to remove the second epitaxial layer and undesired amorphous silicon or polysilicon. The carbon present in the first and second epitaxial layers reduces phosphorus diffusion, which allows for higher phosphorus doping concentrations. The increased phosphorus concentrations reduce the resistivity of the final device. The devices include epitaxial layers having a resistivity of less than about 0.381 milliohm-centimeters.

摘要翻译： 本发明的实施例一般涉及形成外延层的方法和具有外延层的器件。 所述方法通常包括在衬底上形成包括磷和碳的第一外延层，然后在第一外延层上形成包括磷和碳的第二外延层。 第二外延层具有比第一外延层更低的磷浓度，其允许在沉积期间沉积的第二外延层和不期望的非晶硅或多晶硅的选择性蚀刻。 然后将衬底暴露于蚀刻剂以除去第二外延层和不期望的非晶硅或多晶硅。 存在于第一和第二外延层中的碳减少了磷扩散，这允许更高的磷掺杂浓度。 增加的磷浓度降低了最终装置的电阻率。 这些器件包括具有小于约0.381毫欧姆厘米的电阻率的外延层。

公开(公告)号：US08652945B2

公开(公告)日：2014-02-18

申请号：US13193576

申请日：2011-07-28

申请人： Zhiyuan Ye ,  Xuebin Li ,  Saurabh Chopra ,  Yihwan Kim

发明人： Zhiyuan Ye ,  Xuebin Li ,  Saurabh Chopra ,  Yihwan Kim

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02532 ,  H01L21/0257 ,  H01L21/02576 ,  H01L21/0262 ,  H01L29/1054 ,  H01L29/78

摘要： Embodiments of the present invention generally relate to methods for forming silicon epitaxial layers on semiconductor devices. The methods include forming a silicon epitaxial layer on a substrate at increased pressure and reduced temperature. The silicon epitaxial layer has a phosphorus concentration of about 1×1021 atoms per cubic centimeter or greater, and is formed without the addition of carbon. A phosphorus concentration of about 1×1021 atoms per cubic centimeter or greater increases the tensile strain of the deposited layer, and thus, improves channel mobility. Since the epitaxial layer is substantially free of carbon, the epitaxial layer does not suffer from film formation and quality issues commonly associated with carbon-containing epitaxial layers.

摘要翻译： 本发明的实施例一般涉及在半导体器件上形成硅外延层的方法。 所述方法包括在增加的压力和降低的温度下在衬底上形成硅外延层。 硅外延层的磷浓度约为1×1021原子/立方厘米或更大，并且不添加碳形成。 大约1×1021原子/立方厘米或更大的磷浓度增加沉积层的拉伸应变，从而提高通道迁移率。 由于外延层基本上不含碳，外延层不会受到成膜和通常与含碳外延层相关的质量问题的影响。

公开(公告)号：US07897495B2

公开(公告)日：2011-03-01

申请号：US11609608

申请日：2006-12-12

申请人： Zhiyuan Ye ,  Andrew M. Lam ,  Yihwan Kim

发明人： Zhiyuan Ye ,  Andrew M. Lam ,  Yihwan Kim

IPC分类号： H01L21/205

CPC分类号： H01L29/7834 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/66628 ,  H01L29/7848

摘要： Methods for formation of epitaxial layers containing silicon are disclosed. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In specific embodiments, the formation of the epitaxial layer involves exposing a substrate in a process chamber to deposition gases including two or more silicon source such as silane and a higher order silane. Embodiments include flowing dopant source such as a phosphorus dopant, during formation of the epitaxial layer, and continuing the deposition with the silicon source gas without the phosphorus dopant.

摘要翻译： 公开了形成含硅外延层的方法。 具体实施例涉及半导体器件中的外延层的形成和处理，例如金属氧化物半导体场效应晶体管（MOSFET）器件。 在具体实施例中，外延层的形成涉及将处理室中的衬底暴露于包括两个或多个硅源（例如硅烷和高级硅烷）的沉积气体。 实施例包括在形成外延层期间流动掺杂剂源，例如磷掺杂剂，并且在没有磷掺杂剂的情况下继续沉积硅源气体。