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38 条记录 (耗时 0.024 秒)

    TOPOGRAPHICALLY DEFINED THIN FILM CPP READ HEAD
    3.
    发明申请
    TOPOGRAPHICALLY DEFINED THIN FILM CPP READ HEAD 失效
    地理定义薄膜CPP阅读头

    公开(公告)号：US20080062576A1

    公开(公告)日：2008-03-13

    申请号：US11938677

    申请日：2007-11-12

    申请人： David Heim ,  Kim Lee ,  Tsann Lin ,  Jih-Shiuan Luo

    发明人： David Heim ,  Kim Lee ,  Tsann Lin ,  Jih-Shiuan Luo

    IPC分类号： G11B5/33

    CPC分类号： B82Y10/00 ,  G11B5/3163 ,  Y10T29/49048 ,  Y10T403/58

    摘要： A narrow track-width magnetoresistive sensor by defining a trench formed between first and second hard bias layers and depositing the sensor into the trench. The sensor can include a sensor stack sandwiched between first and second electrically conductive lead layers. First and second electrically insulating side walls are formed at either side of the sensor stack. First and second hard bias layers extend from the sides of the sensor stack, being separated from the sensor stack by the first and second electrically insulating side walls. First and second physically hard insulation layers are provided over each of the hard bias layers.

    摘要翻译： 通过限定形成在第一和第二硬偏置层之间的沟槽并将传感器沉积到沟槽中的窄轨道宽度磁阻传感器。 传感器可以包括夹在第一和第二导电引线层之间的传感器堆叠。 第一和第二电绝缘侧壁形成在传感器堆叠的任一侧。 第一和第二硬偏压层从传感器堆叠的侧面延伸，通过第一和第二电绝缘侧壁与传感器堆叠分离。 第一和第二物理硬绝缘层设置在每个硬偏压层上。

    Magnetic sensor having a physically hard insulation layer over a magnetic bias structure
    5.
    发明授权
    Magnetic sensor having a physically hard insulation layer over a magnetic bias structure 失效
    磁传感器在磁偏置结构上具有物理硬绝缘层

    公开(公告)号：US08213132B2

    公开(公告)日：2012-07-03

    申请号：US11938677

    申请日：2007-11-12

    申请人： David Eugene Heim ,  Kim Y. Lee ,  Tsann Lin ,  Jih-Shiuan Luo

    发明人： David Eugene Heim ,  Kim Y. Lee ,  Tsann Lin ,  Jih-Shiuan Luo

    IPC分类号： G11B5/39

    CPC分类号： B82Y10/00 ,  G11B5/3163 ,  Y10T29/49048 ,  Y10T403/58

    摘要： A narrow track-width magnetoresistive sensor by defining a trench formed between first and second hard bias layers and depositing the sensor into the trench. The sensor can include a sensor stack sandwiched between first and second electrically conductive lead layers. First and second electrically insulating side walls are formed at either side of the sensor stack. First and second hard bias layers extend from the sides of the sensor stack, being separated from the sensor stack by the first and second electrically insulating side walls. First and second physically hard insulation layers are provided over each of the hard bias layers.

    摘要翻译： 通过限定形成在第一和第二硬偏置层之间的沟槽并将传感器沉积到沟槽中的窄轨道宽度磁阻传感器。 传感器可以包括夹在第一和第二导电引线层之间的传感器堆叠。 第一和第二电绝缘侧壁形成在传感器堆叠的任一侧。 第一和第二硬偏压层从传感器堆叠的侧面延伸，通过第一和第二电绝缘侧壁与传感器堆叠分离。 第一和第二物理硬绝缘层设置在每个硬偏压层上。

    Method of fabricating magnetic head with anti-parallel passive pinned regions
    7.
    发明申请
    Method of fabricating magnetic head with anti-parallel passive pinned regions 失效
    具有反并联被动固定区域的磁头制造方法

    公开(公告)号：US20050005427A1

    公开(公告)日：2005-01-13

    申请号：US10617908

    申请日：2003-07-10

    申请人： Kim Lee ,  Jih-Shiuan Luo

    发明人： Kim Lee ,  Jih-Shiuan Luo

    IPC分类号： G11B5/39 ,  G11B21/02 ,  G11B5/127 ,  H04R31/00

    CPC分类号： G11B5/3912 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T29/49147

    摘要： A magnetic head and method for forming the same. Leads are added to a wafer stack having a free layer, a bias layer, and a spacer layer between the free layer and bias layer. A gap is formed between the leads. A protective layer is added to the wafer stack such that the gap is covered, as well as facing ends of the leads. Material is removed from at least one side area of the wafer stack using the protective layer as a mask. The protective layer is removed. A portion of the bias layer below the gap is processed for reducing a magnetic moment of the bias layer in the portion of the bias layer below the gap for forming a sensor in which magnetic moments of end portions of the free layer are pinned by magnetic moments of end portions of the bias layer, and preferably antiparallel thereto.

    摘要翻译： 一种磁头及其形成方法。 将引线添加到在自由层和偏置层之间具有自由层，偏置层和间隔层的晶片堆叠中。 导线之间形成间隙。 将保护层添加到晶片堆叠中，使得间隙被覆盖，以及面向引线的端部。 使用保护层作为掩模，从晶片堆叠的至少一个侧面区域去除材料。 保护层被去除。 对间隙下方的偏压层的一部分进行处理，以减少偏压层在间隙下方的部分中的偏置层的磁矩，以形成传感器，其中自由层的端部的磁矩由磁矩固定 的偏置层的端部，优选地与其平行。

    Apparatus for enhancing thermal stability, improving biasing and reducing damage from electrostatic discharge in self-pinned abutted junction heads having a first self-pinned layer extending under the hard bias layers
    10.
    发明授权
    Apparatus for enhancing thermal stability, improving biasing and reducing damage from electrostatic discharge in self-pinned abutted junction heads having a first self-pinned layer extending under the hard bias layers 失效
    用于增强热稳定性，改善偏压并减少在自固定的邻接接头中的静电放电的损伤的装置，其具有在硬偏压层下延伸的第一自固位层

    公开(公告)号：US07092220B2

    公开(公告)日：2006-08-15

    申请号：US10629535

    申请日：2003-07-29

    申请人： Hardayal Singh Gill ,  Wen-Chien Hsiao ,  Jih-Shiuan Luo

    发明人： Hardayal Singh Gill ,  Wen-Chien Hsiao ,  Jih-Shiuan Luo

    IPC分类号： G11B5/39

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3903 ,  G11B5/3932 ,  H01F10/3281 ,  H01F41/302

    摘要： A method and apparatus for enhancing thermal stability, improving biasing and reducing damage from electrical surges in self-pinned abutted junction heads. A first self-pinned layer having a first magnetic orientation is provided, wherein the first self-pinned layer has a first end, a second end and central portion. A second self-pinned layer is formed over only the central portion of the first self-pinned layer and an interlayer is disposed between the first and second self-pinned layers. A free layer is formed in a central region over the second self-pinned layer. First and second hard bias layers are formed over the first and second ends of the first self-pinned layer respectively, the first and second hard bias layer abutting the free layer, the first and second end of the first self-pinned layer extending under the hard bias layers at the first and second ends.

    摘要翻译： 一种用于增强热稳定性，改善偏压并减少自销接合接头中的电涌的损伤的方法和装置。 提供了具有第一磁性取向的第一自固位层，其中第一自固位层具有第一端，第二端和中心部分。 仅在第一自被钉扎层的中心部分上形成第二自固位层，并且中间层设置在第一和第二自固位层之间。 在第二自固位层上的中心区域形成自由层。 第一和第二硬偏压层分别形成在第一自固位层的第一和第二端上，第一和第二硬偏置层邻接自由层，第一自固位层的第一和第二端延伸在 在第一和第二端的硬偏压层。