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公开(公告)号：US20110155058A1
公开(公告)日：2011-06-30
申请号：US12967576
申请日：2010-12-14
CPC分类号： H01L21/67115 , C23C16/46 , C23C16/52 , C30B25/105 , C30B25/12
摘要： Methods and apparatus for processing substrates are disclosed herein. In some embodiments, an apparatus for processing a substrate may include a substrate support having a base having a convex surface, an annular ring disposed on the base, and an edge ring disposed on the annular ring to support a substrate, wherein the base, annular ring, and edge ring form a radiant cavity capable of reflecting energy radiated from a backside of a substrate when disposed on the edge ring and wherein the backside of the substrate faces the convex surface of the base. Alternatively or in combination, in some embodiments, the base may include a metal layer encapsulated between a transparent non-metal upper layer and a non-metal lower layer.
摘要翻译： 本文公开了处理衬底的方法和设备。 在一些实施例中，用于处理衬底的装置可以包括具有底部的衬底支撑件，其具有凸形表面，设置在基座上的环形环和设置在环形环上以支撑衬底的边缘环，其中， 环和边缘环形成辐射腔，其能够在布置在边缘环上时反射从衬底的背面辐射的能量，并且其中衬底的背面朝向基底的凸面。 或者或组合地，在一些实施方案中，碱可以包括封装在透明非金属上层和非金属下层之间的金属层。
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公开(公告)号：US07967911B2
公开(公告)日：2011-06-28
申请号：US11697937
申请日：2007-04-09
IPC分类号： C23C16/448 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/4482
摘要： Methods and apparatus are disclosed for the formation of vaporizing liquid precursor materials. The methods or apparatus can be used as part of a chemical vapor deposition apparatus or system, for example for forming films on substrates. The methods and apparatus involve providing a vessel for containing a liquid precursor and diffusing element having external cross-section dimensions substantially equal to the internal cross-sectional dimensions of the vessel.
摘要翻译： 公开了用于形成蒸发液体前体材料的方法和装置。 方法或装置可以用作化学气相沉积装置或系统的一部分，例如用于在基底上形成膜。 所述方法和装置包括提供用于容纳液体前体的容器和具有基本上等于容器的内部横截面尺寸的外部横截面尺寸的扩散元件。
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公开(公告)号：US07560352B2
公开(公告)日：2009-07-14
申请号：US11378101
申请日：2006-03-17
IPC分类号： H01L21/336
CPC分类号： H01L29/7834 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L21/76243 , H01L21/823814 , H01L21/8249 , H01L29/165 , H01L29/66628 , H01L29/66636 , H01L29/7848 , Y10S438/969
摘要： A method for epitaxially forming a silicon-containing material on a substrate surface utilizes a halogen containing gas as both an etching gas as well as a carrier gas through adjustments of the process chamber temperature and pressure. It is beneficial to utilize HCl as the halogen containing gas because converting HCl from a carrier gas to an etching gas can easily be performed by adjusting the chamber pressure.
摘要翻译： 在衬底表面上外延形成含硅材料的方法通过调节处理室的温度和压力，利用含卤素气体作为蚀刻气体以及载气。 使用HCl作为含卤素气体是有利的，因为通过调节室压力可以容易地将HCl从载气转化为蚀刻气体。
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公开(公告)号：US08991332B2
公开(公告)日：2015-03-31
申请号：US12394203
申请日：2009-02-27
申请人： Satheesh Kuppurao , David K. Carlson , Manish Hemkar , Andrew Lam , Errol Sanchez , Howard Beckford
发明人： Satheesh Kuppurao , David K. Carlson , Manish Hemkar , Andrew Lam , Errol Sanchez , Howard Beckford
CPC分类号： C23C16/46 , C23C16/4411 , C23C16/52 , H01L21/67115 , H01L21/67248
摘要： Systems and apparatus are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated.
摘要翻译： 公开了用于在成膜过程中调节反应室表面的至少一部分的温度以控制膜性质的系统和装置。 腔表面的多于一个部分可以进行温度调制。
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5.发明授权Methods and apparatus for insitu analysis of gases in electronic device fabrication systems 有权电子设备制造系统中气体的原位分析方法和装置公开(公告)号：US08813538B2
公开(公告)日：2014-08-26
申请号：US13237144
申请日：2011-09-20
CPC分类号： G01N33/0016 , Y10T137/85978
摘要： Systems and methods are disclosed that include adjusting a pressure level of a sample gas in a testing chamber, for example, using a pressurized inert reference gas, and determining a composition of the adjusted sample gas. By adjusting the pressure level of the sample gas, the composition of the sample gas may be determined more accurately than otherwise possible. Numerous other aspects are disclosed.
摘要翻译： 公开了系统和方法，其包括例如使用加压的惰性参考气体来调节测试室中的样品气体的压力水平，以及确定经调节的样品气体的组成。 通过调整样品气体的压力水平，可以比其它方法更准确地测定样品气体的组成。 公开了许多其他方面。
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公开(公告)号：US20110217466A1
公开(公告)日：2011-09-08
申请号：US13109533
申请日：2011-05-17
IPC分类号： C23C16/448
CPC分类号： C23C16/4482
摘要： Methods and apparatus are disclosed for the formation of vaporizing liquid precursor materials. The methods or apparatus can be used as part of a chemical vapor deposition apparatus or system, for example for forming films on substrates. The methods and apparatus involve providing a vessel for containing a liquid precursor and diffusing element having external cross-section dimensions substantially equal to the internal cross-sectional dimensions of the vessel.
摘要翻译： 公开了用于形成蒸发液体前体材料的方法和装置。 方法或装置可以用作化学气相沉积装置或系统的一部分，例如用于在基底上形成膜。 所述方法和装置包括提供用于容纳液体前体的容器和具有基本上等于容器的内部横截面尺寸的外部横截面尺寸的扩散元件。
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7.发明申请公开(公告)号：US20120006092A1
公开(公告)日：2012-01-12
申请号：US13237144
申请日：2011-09-20
IPC分类号： G01N29/02
CPC分类号： G01N33/0016 , Y10T137/85978
摘要： Systems and methods are disclosed that include adjusting a pressure level of a sample gas in a testing chamber, for example, using a pressurized inert reference gas, and determining a composition of the adjusted sample gas. By adjusting the pressure level of the sample gas, the composition of the sample gas may be determined more accurately than otherwise possible. Numerous other aspects are disclosed.
摘要翻译： 公开了一种系统和方法，其包括调节测试室中的样品气体的压力水平，例如使用加压的惰性参考气体，以及确定经调节的样品气体的组成。 通过调整样品气体的压力水平，可以比其它方法更准确地确定样品气体的组成。 公开了许多其他方面。
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8.发明授权Methods and apparatus for insitu analysis of gases in electronic device fabrication systems 有权电子设备制造系统中气体的原位分析方法和装置公开(公告)号：US08020427B2
公开(公告)日：2011-09-20
申请号：US12833936
申请日：2010-07-09
IPC分类号： G01N7/00
CPC分类号： G01N33/0016 , Y10T137/85978
摘要： Systems and methods are disclosed that include adjusting a pressure level of a sample gas in a testing chamber, for example, using a pressurized inert reference gas, and determining a composition of the adjusted sample gas. By adjusting the pressure level of the sample gas, the composition of the sample gas may be determined more accurately than otherwise possible. Numerous other aspects are disclosed.
摘要翻译： 公开了一种系统和方法，其包括调节测试室中的样品气体的压力水平，例如使用加压的惰性参考气体，以及确定经调节的样品气体的组成。 通过调整样品气体的压力水平，可以比其它方法更准确地确定样品气体的组成。 公开了许多其他方面。
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公开(公告)号：US20090211523A1
公开(公告)日：2009-08-27
申请号：US12394203
申请日：2009-02-27
申请人： Satheesh Kuppurao , David K. Carlson , Manish Hemkar , Andrew Lam , Errol Sanchez , Howard Beckford
发明人： Satheesh Kuppurao , David K. Carlson , Manish Hemkar , Andrew Lam , Errol Sanchez , Howard Beckford
IPC分类号： B05C11/00
CPC分类号： C23C16/46 , C23C16/4411 , C23C16/52 , H01L21/67115 , H01L21/67248
摘要： Systems and apparatus are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated.
摘要翻译： 公开了用于在成膜过程中调节反应室表面的至少一部分的温度以控制膜性质的系统和装置。 腔表面的多于一个部分可以进行温度调制。
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公开(公告)号：US07718225B2
公开(公告)日：2010-05-18
申请号：US11205647
申请日：2005-08-17
申请人： Satheesh Kuppurao , David K. Carlson , Manish Hemkar , Andrew Lam , Errol Sanchez , Howard Beckford
发明人： Satheesh Kuppurao , David K. Carlson , Manish Hemkar , Andrew Lam , Errol Sanchez , Howard Beckford
IPC分类号： C23C16/00
CPC分类号： C23C16/46 , C23C16/4411 , C23C16/52 , H01L21/67115 , H01L21/67248
摘要： Methods are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated, and may be accomplished by actively keeping the temperature of a first wall of the reaction chamber above the temperature of a second wall during the film formation process.
摘要翻译： 公开了用于在成膜过程中调节反应室表面的至少一部分的温度以控制膜性质的方法。 腔表面的多于一部分可以被温度调节，并且可以通过在成膜过程中将反应室的第一壁的温度高于第二壁的温度来实现。
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