摘要:
A first aspect of the present invention is an improved microwave vacuum feed-through device for coupling microwave energy from a microwave wave guide in a substantially atmospheric pressure region into an elongated linear microwave applicator in a sub-atmospheric pressure region. The improved feed-through is designed to match the impedance of the microwave wave guide in the atmospheric pressure region and the improved linear microwave applicator. A second aspect of the present invention is an improved linear microwave applicator for uniformly coupling 95% or more of the microwave energy input thereto into an elongated plasma zone. The applicator includes curved microwave reflector panels which are used to tune the uniformity of the radiated microwave energy along the length of the linear applicator. A third aspect of the present invention is a microwave enhanced chemical vapor deposition method for depositing thin film material. The method includes a step of intensifying the kinetic/thermal energy of the electrically neutral species in the plasma by intensifying the kinetic/thermal energy of the ions in the plasma and thereby, through ion-neutral collisions, intensifying the kinetic/thermal energy of the electrically neutral species. The step of intensifying the kinetic/thermal energy of the ions in the plasma includes subjecting the plasma to either a very low frequency alternating current electrical bias or an alternating polarity magnetic field, the frequency of thereof being less than about 100 kHz.
摘要:
An improved chemical vapor deposition method for the high-rate low-temperature deposition of high-quality thin film material. The method includes the steps of providing an evacuated chamber having a plasma deposition region defined therein; placing a substrate inside the chamber; supplying plasma deposition precursor gases to the deposition region in the evacuated chamber; directing microwave energy from a source thereof to the deposition region, the microwave energy interacting with the deposition precursor gases to form a plasma of electrons, ions and activated electrically neutral species, the plasma including one or more depositing species; increasing the surface mobility of the depositing species in the plasma by coupling additional non-microwave electronic energy and magnetic energy into the plasma, without intentionally adding thermal energy to the substrate or precursor gas; and depositing a thin film of material onto the substrate.
摘要:
A non-single crystalline semiconductor material includes coordinatively irregular structures characterized by distorted chemical bonding, reduced dimensionality and novel electronic properties. A process for forming the material permits variation of the size, concentration and spatial distribution of coordinatively irregular structures. The electronic properties of the material can be changed by controlling the characteristics of the coordinatively irregular structures.
摘要:
An acute matrix liquid crystal display panel including 1) a plurality of liquid crystal display elements distributed in a matrix of rows and columns; 2) means for supplying video signals and display element selection signals, including row and column conductors; and 3) a plurality of paired Ovonic threshold switches and resistive elements each serially coupled between the corresponding row or column conductor and the liquid crystal display element, the Ovonic threshold switches acting as display element selection devices and current isolation devices in which the Ovonic threshold switches having an off state resistance of at least 1.times.10.sup.9 ohms.
摘要:
A method of controllably introducing a parametric modifier into a perovskite ceramic defect oxide type superconducting material, said method including the substitution of labile atoms of a parametric modifier (such as fluorine) for atoms already present in the ceramic defect oxide material.
摘要:
Atomically engineered hydrogen storage alloys which include a spectrum of hydrogen bonding energies and multiple hydride phases which extends and enhances their storage capacity at high pressures and high pressure hydrogen storage units which contain a variable amount of these hydrogen storage alloys therein to enhance the storage capacity of the unit beyond that obtainable by conventional alloys or pressurized hydrogen gas alone.
摘要:
A thin film, fluorinated, ceramic defect-oxide type superconducting material grown on a substrate such as sapphire or stainless steel. The superconducting material is characterized by basal plane alignment of the unit cells thereof even though the substrate does not possess a perovskite-type lattice structure. A laser ablation technique is used to evaporate material from a fluorinated pellet of target material to deposit the fluorinated superconducing material on the substrate, which is heated during the deposition process. The instant invention provides for a low pressure and relatively low temperature method of depositing a superconducting film which is characterized by (1) a minimal number of high angle grain boundaries typically associated with polycrystalline films, and (2) aligned a, b, and c axes of the unit cells thereof so as to provide for enhanced current carrying capacities. Further, the method of this invention provides for the deposition of superconducting material without a post deposition anneal. Large area, irregularly shaped rolls of inexpensive substrate material can be uniformly covered by the method described herein.
摘要:
An oxide type superconducting material comprising a plurality of metal species and oxygen in combined form, said superconducting material improved by the addition of a parametric modifier.
摘要:
A data storage medium which includes a transition metal as a switching modulator is disclosed. The data storage medium is switchable by projected beam energy, has an erased signal to noise ratio that is substantially invariant with respect to written storage time, and a contrast ratio that is substantially invariant with respect to cycle history. The data storage medium is substantially oxygen free and comprises a chalcogenide and a switching modulator. The switching modulator is a transition metal, especially from the right hand column of Group VIII, e.g. nickel (Ni), palladium (Pd), and platinum (Pt). The concentration of the switching modulator in the data storage medium is high enough to suppress grain growth during written storage, to provide random crystallite orientation and to increase the erase velocity, but low enough to permit discrimination between detectable written and erased states of the data storage medium.
摘要:
An onboard hydrogen storage unit with heat transfer system for a hydrogen powered vehicle. The system includes a hydrogen storage vessel containing a hydrogen storage alloy configured to receive a stream of hydrogen and provide hydrogen for use in powering a vehicle. During refueling a cooling/heating loop is used to remove the heat of hydride formation from the hydrogen storage alloy and during operation of the vehicle the heating/cooling loop is used to supply heat to the hydrogen storage alloy to aid in hydrogen desorption.