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    COMPOSITION USEFUL FOR REMOVAL OF POST-ETCH PHOTORESIST AND BOTTOM ANTI-REFLECTION COATINGS
    1.
    发明申请
    COMPOSITION USEFUL FOR REMOVAL OF POST-ETCH PHOTORESIST AND BOTTOM ANTI-REFLECTION COATINGS 有权
    用于去除蚀刻后胶片和底漆抗反射涂层的组合物

    公开(公告)号：US20090215659A1

    公开(公告)日：2009-08-27

    申请号：US11813497

    申请日：2006-01-09

    申请人： David W. Minsek ,  Weihua Wang ,  David D. Bernhard ,  Thomas H. Baum ,  Melissa K. Rath

    发明人： David W. Minsek ,  Weihua Wang ,  David D. Bernhard ,  Thomas H. Baum ,  Melissa K. Rath

    IPC分类号： G03F7/42

    CPC分类号： G03F7/425 ,  G03F7/091

    摘要： An aqueous-based composition and process for removing hardened photoresist and/or bottom anti-reflective coating (BARC) material from a microelectronic device having same thereon. The aqueous-based composition includes at least one chaotropic solute, at least one alkaline base, and deionized water. The composition achieves high-efficiency removal of hardened photoresist and/or BARC material in the manufacture of integrated circuitry without adverse effect to metal species on the substrate, such as copper, and without damage to low-k dielectric materials employed in the microelectronic device architecture.

    摘要翻译： 一种水性组合物和从其上具有其的微电子器件去除硬化的光致抗蚀剂和/或底部抗反射涂层（BARC）材料的方法。 水基组合物包括至少一种离液序列溶质，至少一种碱性碱和去离子水。 组合物在集成电路的制造中实现了高效去除硬化的光致抗蚀剂和/或BARC材料，而不会对衬底（例如铜）上的金属物质产生不利影响，并且不损害在微电子器件结构中使用的低k电介质材料 。

    Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings
    2.
    发明授权
    Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings 有权
    用于去除蚀刻后光致抗蚀剂和底部防反射涂层的组合物

    公开(公告)号：US07994108B2

    公开(公告)日：2011-08-09

    申请号：US11813497

    申请日：2006-01-09

    申请人： David W. Minsek ,  Weihua Wang ,  David D. Bernhard ,  Thomas H. Baum ,  Melissa K. Rath

    发明人： David W. Minsek ,  Weihua Wang ,  David D. Bernhard ,  Thomas H. Baum ,  Melissa K. Rath

    IPC分类号： G03F7/32

    CPC分类号： G03F7/425 ,  G03F7/091

    摘要： An aqueous-based composition and process for removing hardened photoresist and/or bottom anti-reflective coating (BARC) material from a microelectronic device having same thereon. The aqueous-based composition includes at least one chaotropic solute, at least one alkaline base, and deionized water. The composition achieves high-efficiency removal of hardened photoresist and/or BARC material in the manufacture of integrated circuitry without adverse effect to metal species on the substrate, such as copper, and without damage to low-k dielectric materials employed in the microelectronic device architecture.

    摘要翻译： 一种水性组合物和从其上具有其的微电子器件去除硬化的光致抗蚀剂和/或底部抗反射涂层（BARC）材料的方法。 水基组合物包括至少一种离液序列溶质，至少一种碱性碱和去离子水。 组合物在集成电路的制造中实现了高效去除硬化的光致抗蚀剂和/或BARC材料，而不会对衬底（例如铜）上的金属物质产生不利影响，并且不损害在微电子器件结构中使用的低k电介质材料 。

    Metal and Dielectric Compatible Sacrificial Anti-Reflective Coating Cleaning and Removal Composition
    4.
    发明申请
    Metal and Dielectric Compatible Sacrificial Anti-Reflective Coating Cleaning and Removal Composition 有权
    金属和电介质兼容的牺牲防反射涂层清洁和去除组合物

    公开(公告)号：US20080242574A1

    公开(公告)日：2008-10-02

    申请号：US11916891

    申请日：2006-06-07

    申请人： Melissa K. Rath ,  David D. Bernhard ,  Thomas H. Baum ,  David W. Minsek

    发明人： Melissa K. Rath ,  David D. Bernhard ,  Thomas H. Baum ,  David W. Minsek

    IPC分类号： G03F7/42

    CPC分类号： C11D11/0047 ,  C11D7/08 ,  C11D7/10 ,  C11D7/261 ,  C11D7/263 ,  C11D7/265 ,  C11D7/28 ,  C11D7/34 ,  C11D7/50 ,  G03F7/423

    摘要： A liquid removal composition and process for removing sacrificial anti-reflective coating (SARC) material from a substrate having same thereon. The liquid removal composition includes at least one fluoride-containing compound, at least one organic solvent, optionally water, and optionally at least one chelating agent. The composition achieves at least partial removal of SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric materials employed in the semiconductor architecture.

    摘要翻译： 一种液体去除组合物和从其上具有其的基材去除牺牲抗反射涂层（SARC）材料的方法。 液体去除组合物包括至少一种含氟化物的化合物，至少一种有机溶剂，任选的水和任选的至少一种螯合剂。 该组合物在集成电路的制造中至少部分去除SARC材料，同时对基板上的金属物质（例如铝，铜和钴合金）进行最小蚀刻，并且不损坏在半导体结构中使用的低k电介质材料。

    Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate
    9.
    发明授权
    Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate 有权
    用于蚀刻后去除沉积在基底上的光致抗蚀剂和/或牺牲抗反射材料的组合物和方法

    公开(公告)号：US08338087B2

    公开(公告)日：2012-12-25

    申请号：US10792038

    申请日：2004-03-03

    申请人： Melissa K. Rath ,  David D. Bernhard ,  David Minsek ,  Michael B. Korzenski ,  Thomas H. Baum

    发明人： Melissa K. Rath ,  David D. Bernhard ,  David Minsek ,  Michael B. Korzenski ,  Thomas H. Baum

    IPC分类号： G03F7/32 ,  G03F7/42

    CPC分类号： C11D3/044 ,  C11D3/30 ,  C11D3/3947 ,  C11D7/06 ,  C11D11/0047 ,  G03F7/423 ,  G03F7/425

    摘要： A composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) materials from a substrate having such material(s) thereon. The composition includes a base component, such as a quaternary ammonium base in combination with an alkali or alkaline earth base, or alternatively a strong base in combination with an oxidant. The composition may be utilized in aqueous medium, e.g., with chelator, surfactant, and/or co-solvent species, to achieve high-efficiency removal of photoresist and/or SARC materials in the manufacture of integrated circuitry, without adverse effect on metal species on the substrate, such as copper, aluminum and/or cobalt alloys, and without damage to SiOC-based dielectric materials employed in the semiconductor architecture.

    摘要翻译： 用于从其上具有这种材料的基材去除光致抗蚀剂和/或牺牲抗反射涂层（SARC）材料的组合物和方法。 组合物包括碱性组分，例如与碱金属或碱土金属碱组合的季铵碱，或与氧化剂组合的强碱。 该组合物可以在水性介质中使用，例如与螯合剂，表面活性剂和/或共溶剂物质一起使用，以在集成电路的制造中实现高效去除光致抗蚀剂和/或SARC材料，而不会对金属物质产生不利影响 在基底上，例如铜，铝和/或钴合金，并且不损坏在半导体结构中使用的SiOC基电介质材料。

    COMPOSITIONS AND METHODS FOR SELECTIVE REMOVAL OF METAL OR METAL ALLOY AFTER METAL SILICIDE FORMATION
    10.
    发明申请
    COMPOSITIONS AND METHODS FOR SELECTIVE REMOVAL OF METAL OR METAL ALLOY AFTER METAL SILICIDE FORMATION 审中-公开
    金属硅化物形成后选择性去除金属或金属合金的组合物和方法

    公开(公告)号：US20090212021A1

    公开(公告)日：2009-08-27

    申请号：US11917453

    申请日：2006-06-13

    申请人： David D. Bernhard ,  Weihua Wang ,  Thomas H. Baum

    发明人： David D. Bernhard ,  Weihua Wang ,  Thomas H. Baum

    IPC分类号： B44C1/22 ,  C09K13/00 ,  C09K13/06 ,  C09K13/08

    CPC分类号： H01L21/32134 ,  C23F1/26 ,  C23F1/28

    摘要： An aqueous metal etching composition useful for removal of metals such as nickel, cobalt, titanium, tungsten, and alloys thereof, after formation of metal silicides via rapid thermal annealing during complementary metal-oxide-semiconductor (CMOS) transistor fabrication. The aqueous metal etching composition is also useful for selective removal of metal silicides and/or metal nitrides for wafer re-work. In one formulation, the aqueous metal etching composition contains oxalic acid, and a chloride-containing compound, and in other formulations, the composition contains an oxidizer, such as hydrogen peroxide, and a fluoride source, e.g., borofluoric acid. The composition in another specific formulation contains borofluoric acid and boric acid for effective etching of nickel, cobalt, titanium, tungsten, metal alloys, metal silicides and metal nitrides, without attacking the dielectric and the substrate.

    摘要翻译： 在互补金属氧化物半导体（CMOS）晶体管制造中通过快速热退火形成金属硅化物之后，可用于去除诸如镍，钴，钛，钨及其合金的金属的含水金属蚀刻组合物。 含水金属蚀刻组合物还可用于选择性去除金属硅化物和/或金属氮化物用于晶片再加工。 在一种配方中，含水金属蚀刻组合物含有草酸和含氯化合物，并且在其它配方中，该组合物含有氧化剂，例如过氧化氢和氟化物源，例如硼氟酸。 另一具体制剂中的组合物含有硼氟酸和硼酸，用于有效地蚀刻镍，钴，钛，钨，金属合金，金属硅化物和金属氮化物，而不侵蚀电介质和基底。