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    Method of fabrication an ultra-thin quartz resonator
    2.
    发明授权
    Method of fabrication an ultra-thin quartz resonator 有权
    制造超薄石英谐振器的方法

    公开(公告)号：US08769802B1

    公开(公告)日：2014-07-08

    申请号：US12831028

    申请日：2010-07-06

    申请人： David T. Chang ,  Randall L. Kubena ,  Pamela R. Patterson

    发明人： David T. Chang ,  Randall L. Kubena ,  Pamela R. Patterson

    IPC分类号： H04R31/00

    CPC分类号： H03H9/172 ,  H03H3/04

    摘要： A method for manufacturing a resonator is presented in the present application. The method includes providing a handle substrate, providing a host substrate, providing a quartz substrate comprising a first surface opposite a second surface, applying interposer film to the first surface of the quartz substrate, bonding the quartz substrate to the handle substrate wherein the interposer film is disposed between the quartz substrate and the handle substrate, thinning the second surface of the quartz substrate, removing a portion of the bonded quartz substrate to expose a portion of the interposer film, bonding the quartz substrate to the host substrate, and removing the handle substrate and the interposer film, thereby releasing the quartz substrate.

    摘要翻译： 在本申请中提出了一种用于制造谐振器的方法。 该方法包括提供处理衬底，提供主体衬底，提供包括与第二表面相对的第一表面的石英衬底，将中介层膜施加到石英衬底的第一表面，将石英衬底接合到处理衬底，其中插入膜 设置在石英基板和手柄基板之间，使石英基板的第二表面变薄，去除一部分键合的石英基板以暴露中间层膜的一部分，将石英基板接合到主基板，并且移除手柄 基板和内插膜，从而释放石英基板。

    Quartz-based MEMS resonators and methods of fabricating same
    4.
    发明授权
    Quartz-based MEMS resonators and methods of fabricating same 有权
    基于石英的MEMS谐振器及其制造方法

    公开(公告)号：US08765615B1

    公开(公告)日：2014-07-01

    申请号：US12816292

    申请日：2010-06-15

    申请人： David T. Chang ,  Frederic P. Stratton ,  Hung Nguyen ,  Randall L. Kubena

    发明人： David T. Chang ,  Frederic P. Stratton ,  Hung Nguyen ,  Randall L. Kubena

    IPC分类号： H01L21/302 ,  H01L21/311 ,  H01L21/3105

    CPC分类号： H01L21/31111 ,  B81B2201/0271 ,  B81C1/00238 ,  B81C2201/0194 ,  B81C2203/036 ,  B81C2203/038 ,  H01L21/31056 ,  H03H3/0072 ,  H03H2009/02291

    摘要： A quart resonator for use in lower frequency applications (typically lower than the higher end of the UHF spectrum) where relatively thick quartz members, having a thickness greater than ten microns, are called for. A method for fabricating same resonator includes providing a first quart substrate; thinning the first quartz substrate to a desired thickness; forming a metallic etch stop on a portion of a first major surface of the first quartz substrate; adhesively attaching the first major surface of the first quartz substrate with the metallic etch stop formed thereon to a second quartz substrate using a temporary adhesive; etching a via though the first quartz substrate to the etch stop; forming a metal electrode on a second major surface of the first quartz substrate, the metal electrode penetrating the via in the first quartz substrate to make ohmic contact with the metallic etch stop; bonding the metal electrode formed on the second major surface of the first quartz substrate to a pad formed on a substrate bearing oscillator drive circuitry to form a bond there between; and dissolving the temporary adhesive to thereby release the second quartz substrate from the substrate bearing oscillator drive circuitry and a portion of the first quartz substrate bonded thereto via the bond formed between the metal electrode formed on the second major surface of the first quartz substrate to and the pad formed on the substrate bearing oscillator drive circuitry.

    摘要翻译： 用于低频应用（通常低于UHF频谱的较高端）的夸特谐振器，其中厚度大于10微米的相对较厚的石英构件被要求。 一种制造相同谐振器的方法包括提供第一夸脱基片; 将第一石英基板变薄至所需厚度; 在所述第一石英衬底的第一主表面的一部分上形成金属蚀刻停止件; 使用临时粘合剂将第一石英基板的第一主表面与其上形成的金属蚀刻停止粘合到第二石英基板上; 将通过第一石英衬底的通孔蚀刻到蚀刻停止部; 在所述第一石英衬底的第二主表面上形成金属电极，所述金属电极穿过所述第一石英衬底中的通孔以与所述金属蚀刻停止件欧姆接触; 将形成在第一石英衬底的第二主表面上的金属电极接合到形成在承载振荡器驱动电路的衬底上的焊盘，以在其之间形成结合; 并且将临时粘合剂溶解，从而从基板轴承振荡器驱动电路和第一石英基板的一部分经由形成在第一石英基板的第二主表面上的金属电极之间的键与第一石英基板接合的部分而释放第二石英基板 衬垫形成在承载振荡器驱动电路的衬底上。

    MULTI-BAND SUB-WAVELENGTH IR DETECTOR HAVING FREQUENCY SELECTIVE SLOTS AND METHOD OF MAKING THE SAME
    5.
    发明申请
    MULTI-BAND SUB-WAVELENGTH IR DETECTOR HAVING FREQUENCY SELECTIVE SLOTS AND METHOD OF MAKING THE SAME 有权
    具有频率选择性位置的多带子波长红外探测器及其制作方法

    公开(公告)号：US20100276595A1

    公开(公告)日：2010-11-04

    申请号：US12433631

    申请日：2009-04-30

    申请人： Deborah J. Kirby ,  Terence J. De Lyon ,  David T. Chang ,  Frederic P. Stratton ,  Daniel J. Gregoire ,  Jeffery J. Puschell

    发明人： Deborah J. Kirby ,  Terence J. De Lyon ,  David T. Chang ,  Frederic P. Stratton ,  Daniel J. Gregoire ,  Jeffery J. Puschell

    IPC分类号： G01J5/02 ,  B05D5/00 ,  B44C1/22

    CPC分类号： H01L27/14625 ,  G02B5/208 ,  H01L27/14621 ,  H01L27/14629 ,  H01L27/14649 ,  H01L27/14685 ,  H01L31/0232 ,  H01L31/0236

    摘要： In one embodiment, a multiband infrared (IR) detector array includes a metallic surface having a plurality of periodic resonant structures configured to resonantly transmit electromagnetic energy in distinct frequency bands. A plurality of pixels on the array each include at least first and second resonant structures corresponding to first and second wavelengths. For each pixel, the first and second resonant structures have an associated detector and are arranged such that essentially all of the electromagnetic energy at the first wavelength passes through the first resonant structure onto the first detector, and essentially all of the electromagnetic energy at the second wavelength passes through the second resonant structure onto the second detector. In one embodiment, the resonant structures are apertures or slots, and the IR detectors may be mercad telluride configured to absorb radiation in the 8-12 μm band. Detection of more than two wavelengths may be achieved by proper scaling. A method of forming an IR detector array is also disclosed.

    摘要翻译： 在一个实施例中，多频带红外（IR）检测器阵列包括具有多个周期性谐振结构的金属表面，其被配置为在不同频带中共振地传输电磁能。 阵列上的多个像素包括至少对应于第一和第二波长的第一和第二谐振结构。 对于每个像素，第一和第二谐振结构具有相关联的检测器，并且被布置成使得第一波长的电磁能量基本上全部通过第一谐振结构到第一检测器上，并且基本上所有的第二电磁能量 波长通过第二谐振结构到第二检测器。 在一个实施例中，谐振结构是孔或狭缝，并且IR检测器可以是被配置为吸收8-12μm带中的辐射的巯基碲化物。 可以通过适当的缩放来实现超过两个波长的检测。 还公开了形成IR检测器阵列的方法。

    Large area integration of quartz resonators with electronics
    6.
    发明申请
    Large area integration of quartz resonators with electronics 有权
    石英谐振器与电子部件的大面积集成

    公开(公告)号：US20080034575A1

    公开(公告)日：2008-02-14

    申请号：US11502336

    申请日：2006-08-09

    申请人： David T. Chang ,  Randall L. Kubena

    发明人： David T. Chang ,  Randall L. Kubena

    IPC分类号： H04R31/00

    CPC分类号： H04R17/00 ,  H01L2924/0002 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49007 ,  Y10T29/4908 ,  Y10T29/53178 ,  H01L2924/00

    摘要： Methods for integrating quartz-based resonators with electronics on a large area wafer through direct pick-and-place and flip-chip bonding or wafer-to-wafer boding using handle wafers are described. The resulting combination of quartz-based resonators and large area electronics wafer solves the problem of the quartz-electronics substrate diameter mismatch and enables the integration of arrays of quartz devices of different frequencies with the same electronics.

    摘要翻译： 描述了通过直接拾取和倒装芯片接合或使用处理晶片的晶片到晶片的布局将石英基谐振器与大面积晶片上的电子器件集成的方法。 所得到的石英基谐振器和大面积电子晶片的组合解决了石英电子衬底直径不匹配的问题，并且能够将具有不同频率的石英器件的阵列与相同的电子器件集成。

    Single crystal, dual wafer, tunneling sensor or switch with silicon on insulator substrate and a method of making same
    7.
    发明授权
    Single crystal, dual wafer, tunneling sensor or switch with silicon on insulator substrate and a method of making same 失效

    公开(公告)号：US06982185B2

    公开(公告)日：2006-01-03

    申请号：US10358471

    申请日：2003-02-04

    申请人： Randall L. Kubena ,  David T. Chang

    发明人： Randall L. Kubena ,  David T. Chang

    IPC分类号： H01L21/00

    CPC分类号： H01H1/0036 ,  G01P15/0802 ,  G01P15/0894 ,  H01H59/0009

    摘要： A method of making a micro electro-mechanical switch or tunneling sensor. A cantilevered beam structure and a mating structure are defined on an etch stop layer on a first substrate or wafer; and at least one contact structure and a mating structure are defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer. A bonding layer, preferably a eutectic bonding layer, is provided on at least one of the mating structures. The mating structure of the first substrate is moved into a confronting relationship with the mating structure of the second substrate or wafer. Pressure is applied between the two substrates so as to cause a bond to occur between the two mating structures at the bonding or eutectic layer. Then the first substrate or wafer and the etch stop layer are removed to free the cantilevered beam structure for movement relative to the second substrate or wafer.

    Method of manufacturing MEMS based quartz hybrid filters
    8.
    发明授权
    Method of manufacturing MEMS based quartz hybrid filters 有权
    制造MEMS基石英混合滤波器的方法

    公开(公告)号：US08782876B1

    公开(公告)日：2014-07-22

    申请号：US13163357

    申请日：2011-06-17

    申请人： Randall L. Kubena ,  David T. Chang

    发明人： Randall L. Kubena ,  David T. Chang

    IPC分类号： H04R17/10 ,  H04R31/00

    CPC分类号： H03H9/542 ,  H03H9/0542

    摘要： A process for fabricating an integrated Micro-Electro-Mechanical Systems (MEMS) filter includes bonding an insulating substrate having a first end and a second end to a base substrate, the second end of the insulating substrate cantilevered over and separated from the base substrate by a gap, forming a resonator element on the second end of the insulating substrate, forming an inductive element comprising a coil, wherein the coil is formed on the insulating substrate, and forming a capacitive element on the first side of the insulating substrate, the capacitive element comprised of two conductive plates, wherein one of the two conductive plates is formed on the insulating substrate.

    摘要翻译： 一种用于制造集成的微电子机械系统（MEMS）滤波器的方法，包括将具有第一端和第二端的绝缘基板接合到基底基板，绝缘基板的第二端通过 间隙，在所述绝缘基板的第二端上形成谐振器元件，形成包括线圈的电感元件，其中所述线圈形成在所述绝缘基板上，并且在所述绝缘基板的第一侧上形成电容元件，所述电容 由两个导电板组成的元件，其中两个导电板中的一个形成在绝缘基板上。

    Large area integration of quartz resonators with electronics
    9.
    发明授权
    Large area integration of quartz resonators with electronics 有权
    石英谐振器与电子部件的大面积集成

    公开(公告)号：US08138016B2

    公开(公告)日：2012-03-20

    申请号：US12399680

    申请日：2009-03-06

    申请人： David T. Chang ,  Randall L. Kubena

    发明人： David T. Chang ,  Randall L. Kubena

    IPC分类号： H01L21/44 ,  H01L23/34

    CPC分类号： H04R17/00 ,  H01L2924/0002 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49007 ,  Y10T29/4908 ,  Y10T29/53178 ,  H01L2924/00

    摘要： Methods for integrating quartz-based resonators with electronics on a large area wafer through direct pick-and-place and flip-chip bonding or wafer-to-wafer bonding using handle wafers are described. The resulting combination of quartz-based resonators and large area electronics wafer solves the problem of the quartz-electronics substrate diameter mismatch and enables the integration of arrays of quartz devices of different frequencies with the same electronics.

    摘要翻译： 描述了通过直接拾取和倒装芯片接合或使用处理晶片的晶片到晶片结合将石英基谐振器与大面积晶片上的电子器件集成的方法。 所得到的石英基谐振器和大面积电子晶片的组合解决了石英电子衬底直径不匹配的问题，并且能够将具有不同频率的石英器件的阵列与相同的电子器件集成。