Method of thermal processing structures formed on a substrate
    10.
    发明授权
    Method of thermal processing structures formed on a substrate 有权
    在基板上形成的热处理结构的方法

    公开(公告)号:US07569463B2

    公开(公告)日:2009-08-04

    申请号:US11459847

    申请日:2006-07-25

    IPC分类号: H01L21/04

    摘要: The present invention generally describes one or more apparatuses and various methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.

    摘要翻译: 本发明总体上描述了一种或多种用于在衬底的期望区域上进行退火处理的设备和各种方法。 在一个实施例中,一定量的能量被传送到衬底的表面以优先地熔化衬底的某些所需区域以去除由先前的处理步骤(例如,从注入工艺引起的晶体损伤)所产生的不必要的损坏,更均匀地分布各种掺杂剂 基底的区域和/或激活基底的各个区域。 由于掺杂剂原子在衬底的熔融区域中的扩散速率和溶解度增加,优选熔融过程将允许掺杂剂在熔融区域中更均匀地分布。 熔化区域的产生因此允许:1)掺杂剂原子更均匀地重新分布,2)在先前的待处理步骤中产生的缺陷,以及3)具有要突变的掺杂剂浓度的区域。