公开(公告)号：US06803297B2

公开(公告)日：2004-10-12

申请号：US10251440

申请日：2002-09-20

申请人： Dean Jennings ,  Sairaju Tallavarjula ,  Randhir Thakur

发明人： Dean Jennings ,  Sairaju Tallavarjula ,  Randhir Thakur

IPC分类号： H01L21425

CPC分类号： H01L21/67115 ,  H01L21/324 ,  H01L21/67109

摘要： A method for activating implanted dopants in a semiconductor substrate to form shallow junctions comprises the steps of: maintaining gas pressure in the processing chamber at a level significantly lower than atmospheric pressure, providing a flow of a carrier gas into the processing chamber, subjecting the substrate to a temperature treatment process, and introducing oxygen into the processing chamber during all or part of the temperature treatment process.

公开(公告)号：US20120015455A1

公开(公告)日：2012-01-19

申请号：US13188866

申请日：2011-07-22

申请人： Sairaju Tallavarjula ,  Kailash Pradhan ,  Huy Q. Nguyen ,  Jian Li

发明人： Sairaju Tallavarjula ,  Kailash Pradhan ,  Huy Q. Nguyen ,  Jian Li

IPC分类号： H01L21/66 ,  H01L21/3065 ,  B05C11/00

CPC分类号： H01J37/32972 ,  G01J3/28 ,  G01J3/443 ,  G01N21/274 ,  G01N21/66 ,  H01J37/32935 ,  H01J2237/2482

摘要： Methods for matching semiconductor processing chambers using a calibrated spectrometer are disclosed. In one embodiment, plasma attributes are measured for a process in a reference chamber and a process in an aged chamber. Using a calibrated light source, an optical path equivalent to an optical path in a reference chamber and an optical path in an aged chamber can be compared by determining a correction factor. The correction factor is applied to adjust a measured intensity of plasma radiation through the optical path in the aged chamber. Comparing a measured intensity of plasma radiation in the reference chamber and the adjusted measured intensity in the aged chamber provide an indication of changed chamber conditions. A magnitude of change between the two intensities can be used to adjust the process parameters to yield a processed substrate from the aged chamber which matches that of the reference chamber.

摘要翻译： 公开了使用校准光谱仪来匹配半导体处理室的方法。 在一个实施例中，测量参考室中的过程和老化室中的过程的等离子体属性。 通过使用校准光源，可以通过确定校正因子来比较与参考室中的光路相当的光路和老化室中的光路。 应用校正因子来调节通过老化室中的光路的等离子体辐射的测量强度。 将参考室中的等离子体辐射的测量强度与老化室中调整的测量强度进行比较，提供改变的室条件的指示。 可以使用两个强度之间的变化幅度来调整工艺参数，以从老化室产生与参考室相匹配的处理过的衬底。

公开(公告)号：US08101906B2

公开(公告)日：2012-01-24

申请号：US12247468

申请日：2008-10-08

申请人： Sairaju Tallavarjula ,  Kailash Pradhan ,  Huy Q. Nguyen ,  Jian Li

发明人： Sairaju Tallavarjula ,  Kailash Pradhan ,  Huy Q. Nguyen ,  Jian Li

IPC分类号： G12B13/00

CPC分类号： H01J37/32972 ,  G01J3/28 ,  G01J3/443 ,  G01N21/274 ,  G01N21/66 ,  H01J37/32935 ,  H01J2237/2482

摘要： Methods for matching semiconductor processing chambers using a calibrated spectrometer are disclosed. In one embodiment, plasma attributes are measured for a process in a reference chamber and a process in an aged chamber. Using a calibrated light source, an optical path equivalent to an optical path in a reference chamber and an optical path in an aged chamber can be compared by determining a correction factor. The correction factor is applied to adjust a measured intensity of plasma radiation through the optical path in the aged chamber. Comparing a measured intensity of plasma radiation in the reference chamber and the adjusted measured intensity in the aged chamber provide an indication of changed chamber conditions. A magnitude of change between the two intensities can be used to adjust the process parameters to yield a processed substrate from the aged chamber which matches that of the reference chamber.

摘要翻译： 公开了使用校准光谱仪来匹配半导体处理室的方法。 在一个实施例中，测量参考室中的过程和老化室中的过程的等离子体属性。 通过使用校准光源，可以通过确定校正因子来比较与参考室中的光路相当的光路和老化室中的光路。 应用校正因子来调节通过老化室中的光路的等离子体辐射的测量强度。 将参考室中的等离子体辐射的测量强度与老化室中调整的测量强度进行比较，提供改变的室条件的指示。 可以使用两个强度之间的变化幅度来调整工艺参数，以从老化室产生与参考室相匹配的处理过的衬底。

公开(公告)号：US20100084544A1

公开(公告)日：2010-04-08

申请号：US12247468

申请日：2008-10-08

申请人： Sairaju Tallavarjula ,  Kailash Pradhan ,  Huy Q. Nguyen ,  Jian Li

发明人： Sairaju Tallavarjula ,  Kailash Pradhan ,  Huy Q. Nguyen ,  Jian Li

IPC分类号： G12B13/00

CPC分类号： H01J37/32972 ,  G01J3/28 ,  G01J3/443 ,  G01N21/274 ,  G01N21/66 ,  H01J37/32935 ,  H01J2237/2482

摘要： Methods for matching semiconductor processing chambers using a calibrated spectrometer are disclosed. In one embodiment, plasma attributes are measured for a process in a reference chamber and a process in an aged chamber. Using a calibrated light source, an optical path equivalent to an optical path in a reference chamber and an optical path in an aged chamber can be compared by determining a correction factor. The correction factor is applied to adjust a measured intensity of plasma radiation through the optical path in the aged chamber. Comparing a measured intensity of plasma radiation in the reference chamber and the adjusted measured intensity in the aged chamber provide an indication of changed chamber conditions. A magnitude of change between the two intensities can be used to adjust the process parameters to yield a processed substrate from the aged chamber which matches that of the reference chamber.

摘要翻译： 公开了使用校准光谱仪来匹配半导体处理室的方法。 在一个实施例中，测量参考室中的过程和老化室中的过程的等离子体属性。 通过使用校准光源，可以通过确定校正因子来比较与参考室中的光路相当的光路和老化室中的光路。 应用校正因子来调节通过老化室中的光路的等离子体辐射的测量强度。 将参考室中的等离子体辐射的测量强度与老化室中调整的测量强度进行比较，提供改变的室条件的指示。 可以使用两个强度之间的变化幅度来调整工艺参数，以从老化室产生与参考室相匹配的处理过的衬底。

公开(公告)号：US09865438B2

公开(公告)日：2018-01-09

申请号：US13188866

申请日：2011-07-22

申请人： Sairaju Tallavarjula ,  Kailash Pradhan ,  Huy Q. Nguyen ,  Jian Li

发明人： Sairaju Tallavarjula ,  Kailash Pradhan ,  Huy Q. Nguyen ,  Jian Li

IPC分类号： G12B13/00 ,  H01J37/32 ,  G01J3/28 ,  G01J3/443 ,  G01N21/27 ,  G01N21/66

CPC分类号： H01J37/32972 ,  G01J3/28 ,  G01J3/443 ,  G01N21/274 ,  G01N21/66 ,  H01J37/32935 ,  H01J2237/2482

摘要： Methods for matching semiconductor processing chambers using a calibrated spectrometer are disclosed. In one embodiment, plasma attributes are measured for a process in a reference chamber and a process in an aged chamber. Using a calibrated light source, an optical path equivalent to an optical path in a reference chamber and an optical path in an aged chamber can be compared by determining a correction factor. The correction factor is applied to adjust a measured intensity of plasma radiation through the optical path in the aged chamber. Comparing a measured intensity of plasma radiation in the reference chamber and the adjusted measured intensity in the aged chamber provide an indication of changed chamber conditions. A magnitude of change between the two intensities can be used to adjust the process parameters to yield a processed substrate from the aged chamber which matches that of the reference chamber.

公开(公告)号：US07813895B2

公开(公告)日：2010-10-12

申请号：US11829762

申请日：2007-07-27

申请人： Sairaju Tallavarjula ,  Aaron Hunter ,  Joseph Ranish ,  Johanes Swenberg ,  Robert M. Haney

发明人： Sairaju Tallavarjula ,  Aaron Hunter ,  Joseph Ranish ,  Johanes Swenberg ,  Robert M. Haney

IPC分类号： G06F11/30

CPC分类号： G01N21/73 ,  G01J3/443 ,  G01J2003/2866 ,  G01N21/274

摘要： Methods for matching semiconductor plasma processing chambers using a calibrated spectrometer are disclosed. In one embodiment, plasma attributes are measured for a process in a reference chamber and a process in a sample chamber. Measuring the plasma attributes during process perturbations allows for the correlation of process parameters to the plasma optical emission spectra. The process parameters can then be adjusted to yield a processed substrate which matches that of the reference chamber. Methods for monitoring the stability of a plasma processing chamber using a calibrated spectrometer are also disclosed.

摘要翻译： 公开了使用校准的光谱仪来匹配半导体等离子体处理室的方法。 在一个实施例中，测量参考室中的过程和样品室中的过程的等离子体属性。 在处理扰动期间测量等离子体属性允许工艺参数与等离子体发射光谱的相关性。 然后可以调整工艺参数以产生与参考室的处理参数相匹配的经处理的衬底。 还公开了使用校准的光谱仪监测等离子体处理室的稳定性的方法。