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    Method for making diffusions into a substrate and electrical connections thereto using silicon containing rare earth hexaboride materials
    1.
    发明授权
    Method for making diffusions into a substrate and electrical connections thereto using silicon containing rare earth hexaboride materials 失效
    使用含硅稀土六硼化物材料制造扩散到基板中并与其连接的方法

    公开(公告)号：US4481046A

    公开(公告)日：1984-11-06

    申请号：US537124

    申请日：1983-09-29

    申请人： Dennis P. Bouldin ,  Dale P. Hallock ,  Stanley Roberts ,  James G. Ryan

    发明人： Dennis P. Bouldin ,  Dale P. Hallock ,  Stanley Roberts ,  James G. Ryan

    IPC分类号： H01L21/225 ,  H01L21/28 ,  H01L21/285 ,  H01L21/321 ,  H01L21/768 ,  H01L29/43

    CPC分类号： H01L21/2254 ,  H01L21/28512 ,  H01L21/321 ,  H01L21/76886

    摘要： A method for diffusing a conductivity determining impurity in a semiconductor substrate and making electrical contact thereto by depositing a conductive layer made of a rare earth hexaboride material containing a predetermined amount of silicon in it over a surface portion of the substrate and heating the substrate for a predetermined period of time at a predetermined temperature which is sufficient to cause boron from the hexaboride material to diffuse into the adjoining portion of the substrate to modify its conductor characteristics. At the same time a good electrical ohmic contact is established between the conductive layer and the adjoining substrate portion while the conductive layer retains its conductivity even after the outdiffusion of some of its boron into the substrate during the heat treatment. A silicon dioxide layer is also formed on the exposed surface of the silicon containing hexaboride material through the oxidation of the silicon disposed close to the exposed surfaces of the hexaboride material.

    摘要翻译： 一种通过在衬底的表面部分沉积由含有预定量的硅的稀土六硼化物材料制成的导电层，将半导体衬底中的导电性确定杂质扩散并与其接触的方法，并加热衬底 预定时间段在足以使来自六硼化物材料的硼扩散到基板的相邻部分中以改变其导体特性的预定温度下。 同时在导电层和邻接的衬底部分之间建立了良好的电欧姆接触，同时即使在热处理过程中，一些硼的一部分向其扩散到衬底中之后，导电层也保持其导电性。 在含硅六硼化物材料的暴露表面上，通过氧化接近六硼化物材料暴露表面的硅也形成二氧化硅层。

    Process for making high dielectric constant nitride based materials and devices using the same
    2.
    发明授权
    Process for making high dielectric constant nitride based materials and devices using the same 失效
    制造高介电常数氮化物基材料的方法及使用其的装置

    公开(公告)号：US4464701A

    公开(公告)日：1984-08-07

    申请号：US527454

    申请日：1983-08-29

    申请人： Stanley Roberts ,  James G. Ryan

    发明人： Stanley Roberts ,  James G. Ryan

    IPC分类号： H01L27/04 ,  H01G4/10 ,  H01G4/20 ,  H01L21/318 ,  H01L21/822 ,  H01G4/06

    CPC分类号： H01G4/20

    摘要： An improved method of fabricating a stable high dielectric constant and low leakage dielectric material which includes oxidizing at a temperature of about 600.degree. C. or higher a layer of a mixture of a transition metal nitride and silicon nitride to produce a mixture which includes an oxide of the transition metal and silicon nitride. The initial mixture of transition metal nitride and silicon nitride may be deposited by reactive sputtering techniques or other known deposition techniques on, a semiconductor or an electrically conductive layer, and the thickness of the mixture should be within the range of 3 to 50 nanometers. By depositing an electrically conductive layer on the oxidized mixture, a capacitor having a high dielectric, and low current leakage dielectric medium is provided.

    摘要翻译： 一种制造稳定的高介电常数和低泄漏介电材料的改进方法，其包括在约600℃或更高的温度下氧化过渡金属氮化物和氮化硅的混合物的层，以产生包括氧化物 的过渡金属和氮化硅。 过渡金属氮化物和氮化硅的初始混合物可以通过反应溅射技术或其它已知的沉积技术沉积在半导体或导电层上，并且混合物的厚度应在3至50纳米的范围内。 通过在氧化的混合物上沉积导电层，提供具有高电介质和低电流泄漏电介质的电容器。

    Method for making diffusions into a substrate and electrical connections thereto using rare earth boride materials
    3.
    发明授权
    Method for making diffusions into a substrate and electrical connections thereto using rare earth boride materials 失效
    使用稀土硼化物材料制造扩散到基板和与其连接的方法

    公开(公告)号：US4490193A

    公开(公告)日：1984-12-25

    申请号：US537128

    申请日：1983-09-29

    申请人： Mousa H. Ishaq ,  Stanley Roberts ,  James G. Ryan

    发明人： Mousa H. Ishaq ,  Stanley Roberts ,  James G. Ryan

    IPC分类号： H01L21/28 ,  H01L21/225 ,  H01L21/285

    CPC分类号： H01L21/2254 ,  H01L21/28512

    摘要： A method for diffusing a conductively determining impurity in a semiconductor substrate and making electrical contact thereto by depositing a layer of a rare earth boride material over a predetermined surface portion of the substrate and heating the substrate for a predetermined period of time at a predetermined temperature which is sufficient to cause boron from the boride material to diffuse into the adjoining portion of the substrate to modify its conductive characteristics. At the same time a good electrical ohmic contact is established between the boride material and the adjoining substrate portion while the boride material retains its conductivity even after the outdiffusion of some of its boron into the substrate during the heat treatment.

    摘要翻译： 一种通过在衬底的预定表面部分上沉积稀土硼化物材料层并将衬底加热预定时间段来扩散半导体衬底中的导电性杂质并使其电接触的方法， 足以使硼从硼化物材料扩散到衬底的相邻部分中以改变其导电特性。 同时在硼化物材料和相邻的基底部分之间建立良好的电欧姆接触，同时硼化物材料即使在热处理过程中其一些硼的一部分向外扩散到衬底中之后也保持其导电性。

    Pharmaceutical compositions
    5.
    发明申请
    Pharmaceutical compositions 有权
    药物组合物

    公开(公告)号：US20060252839A1

    公开(公告)日：2006-11-09

    申请号：US10957242

    申请日：2004-09-27

    申请人： Stanley Roberts ,  Maria Gabriella Santoro ,  Vasudev Jadhav ,  Alan Happe ,  Paul Evans ,  Nicolette Ross ,  Timothy Snape

    发明人： Stanley Roberts ,  Maria Gabriella Santoro ,  Vasudev Jadhav ,  Alan Happe ,  Paul Evans ,  Nicolette Ross ,  Timothy Snape

    IPC分类号： A61K31/10 ,  C07C323/22

    CPC分类号： C07C323/22 ,  C07C323/59 ,  C07C2601/08 ,  C07C2601/10 ,  C07F7/1804

    摘要： A compound comprising a cyclopentanone, cyclopentenone, cyclohexanone or cyclohexenone group, wherein a first ring carbon atom carries an —SR substituent, R is a substituted or unsubstituted alkyl, alkenyl, alkynyl, aryl, aralkyl, aralkenyl, or aralkynyl group that, optionally, includes at least one heteroatom in its carbon skeleton, the remaining available ring carbon atoms are optionally substituted, and said compound either:—(a) is more soluble in water at a temperature of 20-40° C.; (b) is less lipophilic; and/or, (c) has a greater therapeutic index; or; (d) is less soluble in water at a temperature of 20-40° C.; (e) is more lipophilic; and/or, (f) has a greater therapeutic index; than an equivalent cyclohex-2-en-1-one or cyclopent-2-en-1-one derivative in which a hydrogen atom replaces said —SR group.

    摘要翻译： 包含环戊酮，环戊烯酮，环己酮或环己烯酮基团的化合物，其中第一环碳原子带有-SR取代基，R是取代或未取代的烷基，烯基，炔基，芳基，芳烷基，芳烯基或芳炔基， 在其碳骨架中包含至少一个杂原子，剩余的可用环碳原子任选被取代，并且所述化合物： - （a）在20-40℃的温度下更易溶于水; （b）亲脂性较差; 和/或（c）具有较大的治疗指数; 要么; （d）在20-40℃的温度下较少溶于水; （e）更亲脂; 和/或（f）具有较大的治疗指数; 比其中氢原子取代所述-SR基团的当量环己-2-烯-1-酮或环戊-2-烯-1-酮衍生物。

    Pharmaceutically useful compounds
    6.
    发明申请
    Pharmaceutically useful compounds 有权
    药用有用化合物

    公开(公告)号：US20060040869A1

    公开(公告)日：2006-02-23

    申请号：US11059086

    申请日：2005-02-07

    申请人： Stanley Roberts ,  Maria Gabriella Santoro ,  Vasudev Jadhav ,  Alan Happe ,  Jerome Dauvergne

    发明人： Stanley Roberts ,  Maria Gabriella Santoro ,  Vasudev Jadhav ,  Alan Happe ,  Jerome Dauvergne

    IPC分类号： A61K38/05 ,  A61K38/04 ,  A61K31/198 ,  C07C323/39 ,  C07K5/04 ,  C07K5/06

    CPC分类号： C07C323/59 ,  C07C45/673 ,  C07C49/647 ,  C07C49/653 ,  C07C49/657 ,  C07C49/753 ,  C07C205/45 ,  C07C225/20 ,  C07C233/32 ,  C07C233/76 ,  C07C271/24 ,  C07C271/36 ,  C07C271/56 ,  C07C271/66 ,  C07C311/20 ,  C07C311/53 ,  C07C323/43 ,  C07C2601/08 ,  C07C2601/10

    摘要： A compound of formula (I) or (II): wherein A is hydrogen or CR1R2; Y and Z are each, independently, hydrogen or a halogen; X is —NR4R5, or R7; R1 is hydrogen, or a substituted or unsubstituted alkyl or alkenyl group containing 1-4 carbon atoms; when X is —NR4R5, R2 is a substituted or unsubstituted alkyl, alkenyl, alkynyl, aryl, aralkyl aralkenyl, or aralkynyl group, that optionally includes at least one heteroatom in its carbon skeleton and contains 1-12 carbon atoms; when X is R7, R2 is an unsubstituted alkyl, alkenyl or alkynyl group, or a substituted or unsubstituted aryl, aralkyl aralkenyl, or aralkynyl group, that optionally includes at least one heteroatom in its carbon skeleton and contains 1-12 carbon atoms; R3 is a substituted or unsubstituted alkyl, alkenyl, alkynyl, aryl, aralkyl aralkenyl, or aralkynyl group, that optionally includes at least one heteroatom in its carbon skeleton and contains 1-12 carbon atoms; R4 is hydrogen, a substituted or unsubstituted alkyl, alkenyl, alkynyl, aryl, aralkyl aralkenyl, or aralkynyl group, that optionally includes at least one heteroatom in its carbon skeleton and contains 1-12 carbon atoms, —COOR8, or —COR8; R5 is hydrogen, or a substituted or unsubstituted alkyl or alkenyl group containing 1-5 carbon atoms; R7 is an unsubstituted alkyl, alkenyl, or alkynyl group, that contains 1-4 carbon atoms; and, R8 is an unsubstituted or halo-substituted alkyl, aryl, or aralkyl group, that contains 1-12 carbon atoms.

    摘要翻译： 式（I）或（II）的化合物：其中A是氢或CR 1 R 2; Y和Z各自独立地为氢或卤素; X是-NR 4 R 5或R 7; R 1是氢或含有1-4个碳原子的取代或未取代的烷基或链烯基; 当X是-NR 4 R 5时，R 2是取代或未取代的烷基，烯基，炔基，芳基，芳烷基芳烯基或芳炔基 基团，其任选地在其碳骨架中包含至少一个杂原子并且含有1-12个碳原子; 当X是R 7时，R 2是未取代的烷基，烯基或炔基，或取代或未取代的芳基，芳烷基芳烯基或芳炔基，其任选地包括在 其碳骨架中至少有一个杂原子，含有1-12个碳原子; R 3是取代或未取代的烷基，烯基，炔基，芳基，芳烷基芳烯基或芳炔基，其任选地在其碳骨架中包含至少一个杂原子并含有1-12个碳原子; R 4是氢，取代或未取代的烷基，烯基，炔基，芳基，芳烷基芳烯基或芳炔基，其任选地在其碳骨架中包含至少一个杂原子并含有1-12个碳原子， -COOR 8或-COR 8; R 5是氢或含有1-5个碳原子的取代或未取代的烷基或链烯基; R 7是含有1-4个碳原子的未取代的烷基，烯基或炔基; R 8是含有1-12个碳原子的未取代或卤素取代的烷基，芳基或芳烷基。

    Method for providing improved insulation in VLSI and ULSI circuits
    7.
    发明授权
    Method for providing improved insulation in VLSI and ULSI circuits 失效
    在VLSI和ULSI电路中提供改进绝缘的方法

    公开(公告)号：US4987101A

    公开(公告)日：1991-01-22

    申请号：US286443

    申请日：1988-12-16

    申请人： Carter W. Kaanta ,  Stanley Roberts

    发明人： Carter W. Kaanta ,  Stanley Roberts

    IPC分类号： H01L21/768 ,  H01L23/522

    CPC分类号： H01L23/5222 ,  H01L21/7682 ,  H01L2924/0002

    摘要： An improved VLSI and ULSI structure and a method of forming the same are provided. The structure starts with a base member having a plurality of supports formed thereon and extending upwardly therefrom. A selectively removable material is deposited on the base member and around the supports. An insulating cap is formed over the supports and the removable material. Access openings are provided through the cover (or base) and the removable material is removed through the access openings. Thereafter a partial vacuum is formed in the space evacuated by the removable material, and the access openings sealed to provide a dielectric medium around the supports and between the base and cap member having a dielectric constant of less than 2.0.

    Method and structure for providing improved insulation in VLSI and ULSI circuits
    8.
    发明授权
    Method and structure for providing improved insulation in VLSI and ULSI circuits 失效
    在VLSI和ULSI电路中提供改进绝缘的方法和结构

    公开(公告)号：US5144411A

    公开(公告)日：1992-09-01

    申请号：US590290

    申请日：1990-09-28

    申请人： Carter W. Kaanta ,  Stanley Roberts

    发明人： Carter W. Kaanta ,  Stanley Roberts

    IPC分类号： H01L21/768 ,  H01L23/522

    CPC分类号： H01L23/5222 ,  H01L21/7682 ,  H01L2924/0002

    摘要： An improved VLSI or ULSI structure and a method of forming the same are provided. The structure starts with a base member having a plurality of supports formed thereon and extending upwardly therefrom. A selectively removable material is deposited on the base member and around the supports. An insulating cap is formed over the supports and the removable material. Access openings are provided through the cover (or base) and the removable material is removed through the access openings. Thereafter a partial vacuum is formed in the space evacuated by the removable material, and the access openings sealed to provide a dielectric medium around the supports and between the base and cap member having a dielectric constant of less than 2.0.

    Process for making polycide structures
    9.
    发明授权
    Process for making polycide structures 失效
    制造多晶硅结构的方法

    公开(公告)号：US4470189A

    公开(公告)日：1984-09-11

    申请号：US497372

    申请日：1983-05-23

    申请人： Stanley Roberts ,  Francis R. White

    发明人： Stanley Roberts ,  Francis R. White

    IPC分类号： H01L29/78 ,  H01L21/027 ,  H01L21/28 ,  H01L21/3213 ,  H01L21/336 ,  H01L21/768 ,  H01L29/423 ,  H01L29/43 ,  H01L29/49 ,  H01L21/283 ,  C23C15/00

    CPC分类号： H01L29/66575 ,  H01L21/0272 ,  H01L21/28061 ,  H01L21/28123 ,  H01L21/32134 ,  H01L21/32137 ,  H01L21/7688 ,  H01L21/76889 ,  Y10S148/084 ,  Y10S438/951

    摘要： An improved method for making polycide structures for use in electrode and wiring interconnection applications. It includes depositing a layer of polysilicon on an insulating layer and forming on this polysilicon layer a silicide structure and a silicon capping layer. The deposited layers are defined and etched through dry etching techniques using a dry etching mask made of a refractory metal that does not form a volatile halide in a dry etching environment. Metals with such characteristics include cobalt (Co), nickel (Ni), iron (Fe), and manganese (Mn). The metal mask and the other deposited layers may be formed and defined using a photoresist mask as a deposition mask formed to be compatible with lift-off techniques.The silicide may be deposited either through a chemical vapor deposition process or through evaporation techniques. If it is formed through the co-evaporation of metal and silicon, then the structure is subjected to a low temperature reaction annealing step at a temperature between 500.degree. and 600.degree. C. prior to dry etching. To avoid a diffusion of the metal mask into the silicon layer, during this low temperature annealing, the process provides for the formation of a diffusion barrier layer between the metal mask and the silicon layer.Following the removal of the metal mask and the diffusion barrier layer, the structure is annealed at a temperature sufficient to cause the homogenization of the silicide layer.

    摘要翻译： 一种用于制造用于电极和布线互连应用的多晶硅结构的改进方法。 它包括在绝缘层上沉积多晶硅层，并在该多晶硅层上形成硅化物结构和硅覆盖层。 通过干法蚀刻技术，使用由干蚀刻环境中不形成挥发性卤化物的难熔金属制成的干蚀刻掩模来定义和蚀刻沉积层。 具有这种特性的金属包括钴（Co），镍（Ni），铁（Fe）和锰（Mn）。 可以使用形成为与剥离技术相容的沉积掩模的光致抗蚀剂掩模来形成和限定金属掩模和其它沉积层。 硅化物可以通过化学气相沉积工艺或通过蒸发技术沉积。 如果通过金属和硅的共蒸发形成，则在干蚀刻之前，在500℃和600℃之间的温度下对该结构进行低温反应退火步骤。 为了避免金属掩模扩散到硅层中，在该低温退火期间，该工艺提供了在金属掩模和硅层之间形成扩散阻挡层。 在除去金属掩模和扩散阻挡层之后，该结构在足以使硅化物层均匀化的温度下退火。

    Method of making high dielectric constant insulators and capacitors using same
    10.
    发明授权
    Method of making high dielectric constant insulators and capacitors using same 失效
    制造高介电常数绝缘体和使用其的电容器的方法

    公开(公告)号：US4432035A

    公开(公告)日：1984-02-14

    申请号：US387315

    申请日：1982-06-11

    申请人： Ning Hsieh ,  Eugene A. Irene ,  Mousa H. Ishaq ,  Stanley Roberts

    发明人： Ning Hsieh ,  Eugene A. Irene ,  Mousa H. Ishaq ,  Stanley Roberts

    IPC分类号： C01B33/12 ,  B05D5/12 ,  C01B33/113 ,  H01B3/02 ,  H01G2/12 ,  H01G4/06 ,  H01G4/08 ,  H01G4/10 ,  H01L21/314 ,  H01L21/316 ,  H01L21/822 ,  H01L27/04 ,  H01L29/94

    CPC分类号： H01G2/12

    摘要： An improved method of fabricating a stable high dielectric constant and low leakage dielectric material includes oxidizing at a temperature of about 400.degree. C. or higher a layer of a transition metal-silicon alloy having 40% to 90% transition metal by atomic weight to produce a silicate or homogeneous mixture. The mixture includes an oxide of the transition metal and silicon dioxide. The alloy may be deposited on, e.g., a semiconductor or an electrically conductive layer that is oxidation resistant, and the thickness of the mixture or oxidized alloy should be within the range of 5 to 50 nanometers. By depositing an electrically conductive layer on the homogeneous mixture, a capacitor having a high dielectric, low leakage dielectric medium is provided.

    摘要翻译： 制造稳定的高介电常数和低泄漏介电材料的改进方法包括在约400℃或更高的温度下氧化具有40％至90％过渡金属的过渡金属 - 硅合金的原子量以产生 硅酸盐或均质混合物。 该混合物包括过渡金属和二氧化硅的氧化物。 合金可以沉积在例如耐氧化的半导体或导电层上，并且混合物或氧化合金的厚度应在5至50纳米的范围内。 通过在均匀混合物上沉积导电层，提供具有高电介质，低漏电介质的电容器。