摘要:
A semiconductor structure is provided and includes a substrate having an edge surface and a device surface with a central area, a crack stop structure disposed on the device surface and a circuit structure including components disposed on the device surface in the central area and interconnects electrically coupled to the components. The interconnects are configured to extend from the central area to the edge surface while bridging over the crack stop structure.
摘要:
A semiconductor structure is provided and includes a substrate having an edge surface and a device surface with a central area, a crack stop structure disposed on the device surface and a circuit structure including components disposed on the device surface in the central area and interconnects electrically coupled to the components. The interconnects are configured to extend from the central area to the edge surface while bridging over the crack stop structure.
摘要:
Method of manufacturing a semiconductor device structure, including the steps of providing a structure having an insulator layer with at least one interconnect, forming a sub lithographic template mask over the insulator layer, and selectively etching the insulator layer through the sub lithographic template mask to form sub lithographic features spanning to a sidewall of the at least one interconnect.
摘要:
Method of manufacturing a semiconductor device structure, including the steps of providing a structure having an insulator layer with at least one interconnect, forming a sub lithographic template mask over the insulator layer, and selectively etching the insulator layer through the sub lithographic template mask to form sub lithographic features spanning to a sidewall of the at least one interconnect.
摘要:
Method of manufacturing a structure which includes the steps of providing a structure having an insulator layer with at least one interconnect, forming a sub lithographic template mask over the insulator layer, and selectively etching the insulator layer through the sub lithographic template mask to form sub lithographic features spanning to a sidewall of the plurality of interconnects.
摘要:
Method of manufacturing a structure which includes the steps of providing a structure having an insulator layer with at least one interconnect, forming a sub lithographic template mask over the insulator layer, and selectively etching the insulator layer through the sub lithographic template mask to form sub lithographic features spanning to a sidewall of the plurality of interconnects.
摘要:
Semiconductor structure includes an insulator layer having at least one interconnect feature and at least one gap formed in the insulator layer spanning more than a minimum spacing of interconnects.
摘要:
A method for manufacturing a structure includes providing a structure having an insulator layer with at least one interconnect and forming a sub lithographic template mask on the insulator layer. A selective etching step is used for etching the insulator layer through the sub lithographic template mask to form sub lithographic features near the at least one interconnect. A supra lithographic blocking mask may also be utilized. In another aspect, the method includes forming pinch off sections of sub lithographic size formed in a capping layer on the insulator layer. A semiconductor structure includes an insulator layer having at least one interconnect feature and at least one column formed in the insulator layer. A plurality of sub lithographic features formed on a top portion of the insulator layer and communicating with the at least one column is also provided. The plurality of sub lithographic features have a cross section or diameter less than any of the at least one column. A gap may be prohibited from forming on or near scribe lines or vias.
摘要:
Method of manufacturing a structure which includes the steps of providing a structure having an insulator layer with at least one interconnect, forming a sub lithographic template mask over the insulator layer, and selectively etching the insulator layer through the sub lithographic template mask to form sub lithographic features spanning to a sidewall of the at least one interconnect.
摘要:
A method of testing an integrated circuit (IC) chip and a related test structure are disclosed. A test structure includes a monitor chain proximate to at least one solder bump pad, the monitor chain including at least one metal via stack, each metal via stack extending from a lower metal layer in the IC chip to an upper metal layer in the IC chip, such that the monitor chain forms a continuous circuit proximate to the at least one solder bump pad, and where each metal via stack is positioned substantially under the solder bump. A method for testing to detect boundaries of safe effective modulus includes performing a stress test on an IC chip containing the test structure joined to a semiconductor package.