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1.发明申请公开(公告)号：US20170250060A1
公开(公告)日：2017-08-31
申请号：US15594297
申请日：2017-05-12
IPC分类号： H01J37/32 , H01L21/687 , H01L21/67
CPC分类号： H01J37/32724 , H01J37/32082 , H01J37/3244 , H01J37/32715 , H01J2237/334 , H01L21/67069 , H01L21/67103 , H01L21/67109 , H01L21/67248 , H01L21/68785
摘要： A workpiece carrier is described for a plasma processing chamber that has isolated heater plate blocks. In one example, a plasma processing system has a plasma chamber, a plasma source electrically coupled with a showerhead included within the plasma chamber, a workpiece holder in a processing region of the plasma chamber having a puck to carry a workpiece, wherein the workpiece holder includes a heater plate having a plurality of thermally isolated blocks each thermally coupled to the puck, wherein each block includes a heater to heat a respective block of the heater plate, and wherein the workpiece holder includes a cooling plate fastened to and thermally coupled to the heater plate, the cooling plate defining a cooling channel configured to distribute a heat transfer fluid to transfer heat from the cooling plate, and a temperature controller to independently control each heater.
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公开(公告)号：US06444040B1
公开(公告)日：2002-09-03
申请号：US09565150
申请日：2000-05-05
IPC分类号： C23C1600
CPC分类号： C23C16/45565 , C23C16/455 , H01L21/67017
摘要： An apparatus for use in a substrate processing system. The apparatus is generally a fluid distribution plate comprising an inner disk and an outer ring. The fluid distribution plate has a plurality of openings for fluid distribution and at least one slot defined therein.
摘要翻译： 一种用于基板处理系统的装置。 该装置通常是包括内盘和外圈的流体分配板。 流体分配板具有用于流体分配的多个开口和限定在其中的至少一个狭槽。
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3.发明授权Microwave plasma applicator having a thermal transfer medium between a plasma containing tube and a cooling jacket 失效微波等离子体施加器具有在等离子体容纳管和冷却套之间的热转印介质公开(公告)号：US06369493B1
公开(公告)日：2002-04-09
申请号：US09300182
申请日：1999-04-27
IPC分类号： H01J1726
CPC分类号： G03F7/70016 , H01J37/32192 , H01J37/32522
摘要： A plasma applicator having a tube that is surrounded by a cooling jacket such that a volume is defined proximate the tube. The volume is filled with a thermal transfer medium to couple heat from the tube to the cooling jacket. The cooling jacket contains an aperture through which energy is transmitted to a process gas contained in the tube. As such, the process gas is infused with energy and a plasma is formed in the tube.
摘要翻译： 一种等离子体施加器，其具有由冷却套包围的管，使得容积限定在管附近。 体积填充有热传递介质，以将热量从管耦合到冷却套管。 冷却套包含孔，通过该孔将能量传递到管中包含的处理气体。 因此，工艺气体注入能量，并且在管中形成等离子体。
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4.发明授权公开(公告)号：US08580693B2
公开(公告)日：2013-11-12
申请号：US13080561
申请日：2011-04-05
IPC分类号： H01L21/3065 , C23F1/00
CPC分类号： H01J37/20 , H01J37/32715 , H01J37/32724 , H01J2237/334 , H01L21/67109 , H01L21/6831
摘要： Methods and systems for temperature enhanced chucking and dechucking of resistive substrates in a plasma processing apparatus are described herein. In certain embodiments, methods and systems incorporate modulating a glass carrier substrate temperature during a plasma etch process to chuck and dechuck the carrier at first temperatures elevated relative to second temperatures utilized during plasma etching. In embodiments, one or more of plasma heat, lamp heat, resistive heat, and fluid heat transfer are controlled to modulate the carrier substrate temperature between chucking temperatures and process temperatures with each run of the plasma etch process.
摘要翻译： 本文描述了用于等离子体处理装置中的电阻衬底的温度升高夹持和脱扣的方法和系统。 在某些实施方案中，方法和系统包括在等离子体蚀刻工艺期间调节玻璃载体衬底温度，以在相对于在等离子体蚀刻期间使用的第二温度升高的第一温度下卡住和剥离载体。 在实施例中，控制等离子体热，灯热，电阻热和流体热传递中的一种或多种，以在等离子体蚀刻工艺的每次运行中调制夹持温度和工艺温度之间的载体衬底温度。
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公开(公告)号：US08270141B2
公开(公告)日：2012-09-18
申请号：US12884967
申请日：2010-09-17
IPC分类号： H02T23/00
CPC分类号： H01L21/6833 , Y10T279/23
摘要： Embodiments of electrostatic chucks are provided herein. In some embodiments, an electrostatic chuck may include a body having a notched upper peripheral edge, defined by a first surface perpendicular to a body sidewall and a stepped second surface disposed between the first surface and a body upper surface, and a plurality of holes disposed through the body along the first surface; a plurality of fasteners disposed through the plurality of holes to couple the body to a base disposed beneath the body; a dielectric member disposed above the body upper surface to electrostatically retain a substrate; an insulator ring disposed about the body within the notched upper peripheral edge and having a stepped inner sidewall that mates with the stepped second surface to define a non-linear interface therebetween; and an edge ring disposed over the insulator ring, the non-linear interface limiting arcing between the edge ring and the fastener.
摘要翻译： 本文提供了静电卡盘的实施例。 在一些实施例中，静电吸盘可以包括具有切口的上周边边缘的主体，该顶部边缘由垂直于主体侧壁的第一表面和设置在第一表面和主体上表面之间的阶梯状第二表面限定， 沿着第一面穿过身体; 多个紧固件，其布置成穿过所述多个孔，以将所述主体连接到设置在所述主体下方的底座; 设置在所述主体上表面上方的电介质部件，以静电保持基板; 绝缘体环，其围绕所述主体设置在所述凹口的上周边边缘内并且具有与所述阶梯状的第二表面配合的阶梯状的内侧壁，以在其间界定非线性界面; 以及设置在所述绝缘体环上的边缘环，所述非线性界面限制所述边缘环和所述紧固件之间的电弧。
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6.发明申请METHOD OF PROCESSING A WORKPIECE IN A PLASMA REACTOR WITH INDEPENDENT WAFER EDGE PROCESS GAS INJECTION 失效在具有独立波形边缘过程气体注入的等离子体反应器中处理工件的方法公开(公告)号：US20110068082A1
公开(公告)日：2011-03-24
申请号：US12954087
申请日：2010-11-24
申请人： Dan Katz , David Palagashvili , Michael D. Willwerth , Valentin N. Todorow , Alexander M. Paterson
发明人： Dan Katz , David Palagashvili , Michael D. Willwerth , Valentin N. Todorow , Alexander M. Paterson
IPC分类号： C23F1/00
CPC分类号： H01L21/67069 , H01J37/3244 , H01J37/32449 , H01L21/3065
摘要： The disclosure concerns a method of processing a workpiece or in a plasma reactor chamber, using independent gas injection at the wafer edge.
摘要翻译： 本公开涉及在晶片边缘处使用独立气体注入来处理工件或在等离子体反应器室中的方法。
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7.发明申请PLASMA PROCESS EMPLOYING MULTIPLE ZONE GAS DISTRIBUTION FOR IMPROVED UNIFORMITY OF CRITICAL DIMENSION BIAS 审中-公开采用多区域气体分配的等离子体过程改进关键尺寸偏差的均匀性公开(公告)号：US20090275206A1
公开(公告)日：2009-11-05
申请号：US12143146
申请日：2008-06-20
申请人： Dan Katz , David Palagashvili , Brian K. Hatcher , Theodoros Panagopoulos , Valentin N. Todorow , Edward P. Hammond, IV , Alexander M. Paterson , Rodolfo P. Belen
发明人： Dan Katz , David Palagashvili , Brian K. Hatcher , Theodoros Panagopoulos , Valentin N. Todorow , Edward P. Hammond, IV , Alexander M. Paterson , Rodolfo P. Belen
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01J37/3244 , H01J37/32449
摘要： A passivation species precursor gas is furnished to an inner zone at a first flow rate, while flowing an etchant species precursor gas an annular intermediate zone at a second flow rate. Radial distribution of etch rate is controlled by the ratio of the first and second flow rates. The radial distribution of etch critical dimension bias on the wafer is controlled by flow rate of passivation gas to the wafer edge.
摘要翻译： 钝化物质前体气体以第一流速被提供到内部区域，同时以蚀刻剂物质前体气体以第二流速流动环形中间区域。 蚀刻速率的径向分布由第一和第二流速的比率控制。 蚀刻临界尺寸偏置在晶片上的径向分布由通向晶片边缘的钝化气体的流速来控制。
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8.发明申请PLASMA REACTOR WITH CENTER-FED MULTIPLE ZONE GAS DISTRIBUTION FOR IMPROVED UNIFORMITY OF CRITICAL DIMENSION BIAS 失效具有中心多区域气体分配的等离子体反应器，用于改进关键尺寸偏差的均匀性公开(公告)号：US20090272492A1
公开(公告)日：2009-11-05
申请号：US12143092
申请日：2008-06-20
申请人： Dan Katz , David Palagashvili , Brain K. Hatcher , Theodoros Panagopoulos , Valentin N. Todorow , Edward P. Hammond, IV , Alexander M. Paterson , Rodolfo P. Belen
发明人： Dan Katz , David Palagashvili , Brain K. Hatcher , Theodoros Panagopoulos , Valentin N. Todorow , Edward P. Hammond, IV , Alexander M. Paterson , Rodolfo P. Belen
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/3244 , H01J37/32449
摘要： A gas distribution assembly for the ceiling of a plasma reactor includes a center fed hub and an equal path length distribution gas manifold underlying the center fed hub.
摘要翻译： 用于等离子体反应器的天花板的气体分配组件包括中心供给的轮毂和位于中心供给轮毂下方的相等路径长度的分配气体歧管。
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公开(公告)号：US08840725B2
公开(公告)日：2014-09-23
申请号：US12884978
申请日：2010-09-17
IPC分类号： C23C16/455 , C23C16/50 , C23C16/509 , C23F1/00 , H01L21/306 , H01J37/32 , C23C16/06 , C23C16/22
CPC分类号： H01J37/32449 , H01J37/32091 , H01J37/32816 , H01J37/32844
摘要： Embodiments of the present invention provide a recursive liner system that facilitates providing more uniform flow of gases proximate the surface of a substrate disposed within an apparatus for processing a substrate (e.g., a process chamber). In some embodiments, a recursive liner system may include an outer liner having an outer portion configured to line the walls of a process chamber, a bottom portion extending inward from the outer portion, and a lip extending up from the bottom portion to define a well; and an inner liner having a lower portion configured to be at least partially disposed in the well to define, together with the outer liner, a recursive flow path therebetween.
摘要翻译： 本发明的实施例提供了一种循环衬垫系统，其有助于提供更接近于布置在用于处理衬底（例如，处理室）的设备内的衬底的表面的气体的均匀流动。 在一些实施例中，递归衬垫系统可以包括具有外部部分的外部衬套，所述外部部分被配置为对准处理室的壁，从外部向内延伸的底部，以及从底部向上延伸以限定孔 ; 以及内衬，其具有被配置为至少部分地设置在所述孔中的下部，以与所述外衬垫一起限定其间的递归流动路径。
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10.发明申请公开(公告)号：US20140034241A1
公开(公告)日：2014-02-06
申请号：US14051340
申请日：2013-10-10
IPC分类号： H01J37/20
CPC分类号： H01J37/20 , H01J37/32715 , H01J37/32724 , H01J2237/334 , H01L21/67109 , H01L21/6831
摘要： Methods and systems for temperature enhanced chucking and dechucking of resistive substrates in a plasma processing apparatus are described herein. In certain embodiments, methods and systems incorporate modulating a glass carrier substrate temperature during a plasma etch process to chuck and dechuck the carrier at first temperatures elevated relative to second temperatures utilized during plasma etching. In embodiments, one or more of plasma heat, lamp heat, resistive heat, and fluid heat transfer are controlled to modulate the carrier substrate temperature between chucking temperatures and process temperatures with each run of the plasma etch process.
摘要翻译： 本文描述了用于等离子体处理装置中的电阻衬底的温度升高夹持和脱扣的方法和系统。 在某些实施方案中，方法和系统包括在等离子体蚀刻工艺期间调节玻璃载体衬底温度，以在相对于在等离子体蚀刻期间使用的第二温度升高的第一温度下卡住和剥离载体。 在实施例中，控制等离子体热，灯热，电阻热和流体热传递中的一种或多种，以在等离子体蚀刻工艺的每次运行中调制夹持温度和工艺温度之间的载体衬底温度。
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