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公开(公告)号：US20050125990A1
公开(公告)日：2005-06-16
申请号：US10735112
申请日：2003-12-12
CPC分类号： B82Y10/00 , G11B5/127 , G11B5/17 , G11B5/3116 , G11B5/313 , G11B5/3163 , G11B5/3967 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/4906 , Y10T29/49064 , Y10T29/49073
摘要： An improved damascene method of forming a write coil of a magnetic head includes forming a hard mask layer over an insulator layer; forming a photoresist layer over the hard mask layer; performing an image patterning process to produce a write coil pattern in the photoresist layer; etching to remove portions of the hard mask layer in accordance with the write coil pattern; etching to remove portions of the insulator layer in accordance with the write coil pattern; etching to remove the remaining portion of the etched hard mask layer; electroplating a material comprising copper (Cu) within the etched portion of the insulator material; and performing a chemical-mechanical polishing (CMP) process over the resulting structure. By removing the remainder of the hard mask material before the CMP, the quality of the CMP is improved. Although any suitable hard mask material may be utilized, if the insulator layer is a hard-baked resist then Ta2O5 having a relatively high selectivity, low brittleness, and improved adhesion is preferred as the hard mask material.
摘要翻译： 形成磁头的写入线圈的改进的镶嵌方法包括在绝缘体层上形成硬掩模层; 在所述硬掩模层上形成光致抗蚀剂层; 执行图像构图处理以在光致抗蚀剂层中产生写入线圈图案; 蚀刻以根据写入线圈图案去除硬掩模层的部分; 蚀刻以根据写入线圈图案去除绝缘体层的部分; 蚀刻以去除蚀刻的硬掩模层的剩余部分; 在绝缘体材料的蚀刻部分内电镀包含铜（Cu）的材料; 并对结果进行化学机械抛光（CMP）处理。 通过在CMP之前除去硬掩模材料的其余部分，改善了CMP的质量。 尽管可以使用任何合适的硬掩模材料，但是如果绝缘体层是硬烘烤抗蚀剂，则具有相对较高选择性，低脆性和改进的Ta 2 O 5 粘合作为硬掩模材料是优选的。
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2.发明申请公开(公告)号：US20050255705A1
公开(公告)日：2005-11-17
申请号：US10845651
申请日：2004-05-14
IPC分类号： C23F1/00 , H01L21/00 , H01L21/306 , H01L21/31 , H01L21/469 , H01L21/683
CPC分类号： H01L21/67069 , H01J37/32082 , H01L21/6831
摘要： To remove unwanted electrostatic charge from a substrate or substrate clamping mechanism in a plasma processing chamber following the plasma processing of the substrate, the process of shutting down the RF power supply is altered. Specifically, the present invention is a stepped RF power shut down sequence in which the RF power is lowered in a first step from full power to approximately 5 to 10 watts for a short period of time, such as approximately 1 second, and thereafter the RF power is turned off. As a result of this RF power shut down sequence, with its intermediate step, the plasma during the intermediate step acts to neutralize or discharge the electrostatic charge that has built up upon the wafer and/or clamping mechanism during full power operation. When the electrostatic charge has been removed, the wafer sticking problem is resolved.
摘要翻译： 为了在基板的等离子体处理之后的等离子体处理室中的基板或基板夹紧机构中除去不需要的静电电荷，则改变关闭RF电源的过程。 具体地说，本发明是一个步进式RF功率关闭序列，其中RF功率在第一步骤中从全功率降低到大约5到10瓦特，在短时间内，例如大约1秒，然后RF 电源关闭。 作为这种RF功率关闭顺序的结果，通过其中间步骤，中间步骤期间的等离子体用于在全功率操作期间中和或排出已经积聚在晶片和/或夹紧机构上的静电电荷。 当静电电荷被去除时，晶片粘附问题得以解决。
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3.发明申请Magnetic head for hard disk drive having improved magnetic shield for MR sensor 失效用于硬盘驱动器的磁头具有改进的MR传感器磁屏蔽公开(公告)号：US20060002022A1
公开(公告)日：2006-01-05
申请号：US10883141
申请日：2004-06-30
CPC分类号： G11B5/127 , G11B5/3163 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A first magnetic shield layer of the read head sensor is deposited upon a slider substrate surface. A patterned photoresist is then photolithographically fabricated upon the first magnetic shield layer with openings that are formed alongside the location at which the read sensor will be fabricated. An ion milling step is performed to create pockets within the surface of the magnetic shield layer at the location of the openings in the photoresist layer. The photoresist layer is then removed, and a fill layer is deposited across the surface of the magnetic shield layer in a depth greater than the depth of the pocket. Thereafter, a polishing step is conducted to remove portions of the fill layer down to the surface of the magnetic shield layer. A G1 insulation layer is deposited and a magnetic head sensor element is then fabricated upon the insulation layer.
摘要翻译： 读头传感器的第一磁屏蔽层沉积在滑块基板表面上。 然后将图案化的光致抗蚀剂光刻地制造在具有开口的第一磁屏蔽层上，该开口沿着读取传感器将被制造的位置形成。 执行离子铣削步骤以在光致抗蚀剂层中的开口的位置处在磁屏蔽层的表面内产生凹坑。 然后去除光致抗蚀剂层，并且以大于凹穴深度的深度横跨磁屏蔽层的表面沉积填充层。 此后，进行抛光步骤以将填充层的部分向下移动到磁屏蔽层的表面。 沉积G1绝缘层，然后在绝缘层上制造磁头传感器元件。
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公开(公告)号：US07275306B2
公开(公告)日：2007-10-02
申请号：US10735112
申请日：2003-12-12
CPC分类号： B82Y10/00 , G11B5/127 , G11B5/17 , G11B5/3116 , G11B5/313 , G11B5/3163 , G11B5/3967 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/4906 , Y10T29/49064 , Y10T29/49073
摘要： An improved damascene method of forming a write coil of a magnetic head. The method includes the steps of forming a hard mask layer over an insulator layer; forming a photoresist layer over the hard mask layer; performing an image patterning process to produce a write coil pattern in the photoresist layer; etching to remove portions of the hard mask layer in accordance with the write coil pattern; etching to remove portions of the insulator layer in accordance with the write coil pattern; etching to remove the remaining portion of the etched hard mask layer; after removing the etched hard mask layer, electroplating a material within the etched portion of the insulator material; and performing a chemical-mechanical polishing (CMP) process over the electroplated material. By removing the remainder of the hard mask material before the CMP, the quality of the CMP is improved.
摘要翻译： 一种形成磁头的写入线圈的改进的镶嵌方法。 该方法包括在绝缘体层上形成硬掩模层的步骤; 在所述硬掩模层上形成光致抗蚀剂层; 执行图像构图处理以在光致抗蚀剂层中产生写入线圈图案; 蚀刻以根据写入线圈图案去除硬掩模层的部分; 蚀刻以根据写入线圈图案去除绝缘体层的部分; 蚀刻以去除蚀刻的硬掩模层的剩余部分; 在去除蚀刻的硬掩模层之后，在绝缘体材料的蚀刻部分内电镀一种材料; 并对电镀材料进行化学机械抛光（CMP）处理。 通过在CMP之前除去硬掩模材料的其余部分，改善了CMP的质量。
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5.发明授权公开(公告)号：US07340824B2
公开(公告)日：2008-03-11
申请号：US10883141
申请日：2004-06-30
CPC分类号： G11B5/127 , G11B5/3163 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A first magnetic shield layer of the read head sensor is deposited upon a slider substrate surface. A patterned photoresist is then photolithographically fabricated upon the first magnetic shield layer with openings that are formed alongside the location at which the read sensor will be fabricated. An ion milling step is performed to create pockets within the surface of the magnetic shield layer at the location of the openings in the photoresist layer. The photoresist layer is then removed, and a fill layer is deposited across the surface of the magnetic shield layer in a depth greater than the depth of the pocket. Thereafter, a polishing step is conducted to remove portions of the fill layer down to the surface of the magnetic shield layer. A G1 insulation layer is deposited and a magnetic head sensor element is then fabricated upon the insulation layer.
摘要翻译： 读头传感器的第一磁屏蔽层沉积在滑块基板表面上。 然后将图案化的光致抗蚀剂光刻地制造在具有开口的第一磁屏蔽层上，该开口沿着读取传感器将被制造的位置形成。 执行离子铣削步骤以在光致抗蚀剂层中的开口的位置处在磁屏蔽层的表面内产生凹坑。 然后去除光致抗蚀剂层，并且以大于凹穴深度的深度横跨磁屏蔽层的表面沉积填充层。 此后，进行抛光步骤以将填充层的部分向下移动到磁屏蔽层的表面。 沉积G 1绝缘层，然后在绝缘层上制造磁头传感器元件。
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公开(公告)号：US20060168794A1
公开(公告)日：2006-08-03
申请号：US11046421
申请日：2005-01-28
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/398 , G11B2005/3996 , Y10T29/49021 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method for constructing a magnetoresistive sensor that avoids shadowing effects of a mask structure during sensor definition. The method includes the use of an antireflective coating (ARC) and a photosensitive mask deposited there over. The photosensitive mask is formed to cover a desired sensor area, leaving non-sensor areas exposed. A reactive ion etch is performed to transfer the pattern of the photosensitive mask onto the underlying ARC layer. The reactive ion etch (RIE) is performed with a relatively high amount of platen power. The higher platen power increases ion bombardment of the wafer, thereby increasing the physical (ie mechanical) component of material removal relative to the chemical component. This increase in the physical component of material removal result in an increased rate of removal of the photosensitive mask material relative to the ion mill resistant mask. This avoids the formation of a bulbous or mushroom shaped photoresist mask and therefore, avoids shadowing effects during subsequent manufacturing processes.
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7.发明申请Perpendicular magnetic write head having a magnetic write pole with a concave trailing edge 有权具有磁写入磁极的垂直磁性写头具有凹形后缘公开(公告)号：US20070258167A1
公开(公告)日：2007-11-08
申请号：US11411556
申请日：2006-04-25
申请人： Donald Allen , Amanda Baer , Michael Feldbaum , Hung-Chin Guthrie , Wen-Chien Hsiao , Yimin Hsu , Ming Jiang , Yinshi Liu , Aron Neuhaus , Vladimir Nikitin , Aron Pentek , Katalin Pentek , Yi Zheng
发明人： Donald Allen , Amanda Baer , Michael Feldbaum , Hung-Chin Guthrie , Wen-Chien Hsiao , Yimin Hsu , Ming Jiang , Yinshi Liu , Aron Neuhaus , Vladimir Nikitin , Aron Pentek , Katalin Pentek , Yi Zheng
IPC分类号： G11B5/147
CPC分类号： G11B5/3116 , G11B5/11 , G11B5/1278 , G11B5/1871 , G11B5/3146 , G11B5/315 , G11B5/3163
摘要： A magnetic write head for perpendicular magnetic recording having a write pole with a concave trailing edge. The magnetic write pole can have a trapezoidal shape with first and second laterally opposed sides that are further apart at the trailing edge than at the leading edge. The write head may or may not include a magnetic trailing shield, and if a trailing shield is included it is separated from the trailing edge by a non-magnetic write gap layer. The concave trailing edge improves magnetic performance such as by improving the transition curvature. A method for constructing the write head includes forming a magnetic write pole by forming a mask structure over a deposited write pole material, the mask structure having an alumina hard mask and an image transfer layer such as DURAMIDE®. An alumina fill layer is then deposited and a chemical mechanical polish is performed to open up the image transfer layer. A reactive on etch is performed to remove the image transfer layer and a reactive ion mill or reactive ion etch is performed to remove the alumina hard mask and form a concave surface on the write pole.
摘要翻译： 用于垂直磁记录的磁写头，具有带有凹后缘的写极。 磁性写入极可以具有梯形形状，其中第一和第二横向相对侧在后缘处比在前缘处更远地分开。 写头可以包括或可以不包括磁性后屏蔽，并且如果包括后屏蔽，则其通过非磁性写间隙层与后缘分离。 凹形后边缘提高磁性能，例如通过改善转变曲率。 构成写入头的方法包括通过在沉积的写入极材料上形成掩模结构来形成磁性写入极，掩模结构具有氧化铝硬掩模和诸如DURAMIDE的图像转移层。 然后沉积氧化铝填充层，并执行化学机械抛光以打开图像转印层。 执行反应性蚀刻以去除图像转印层，并且执行反应性离子磨或反应离子蚀刻以除去氧化铝硬掩模并在写入极上形成凹面。
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8.发明申请公开(公告)号：US20070263324A1
公开(公告)日：2007-11-15
申请号：US11379969
申请日：2006-04-24
申请人： Donald Allen , Amanda Baer , Michael Feldbaum , Wen-Chien Hsiao , Vladimir Nikitin , Aron Pentek , Katalin Pentek
发明人： Donald Allen , Amanda Baer , Michael Feldbaum , Wen-Chien Hsiao , Vladimir Nikitin , Aron Pentek , Katalin Pentek
IPC分类号： G11B5/48
CPC分类号： G11B5/1278 , G11B5/11 , G11B5/3116 , G11B5/3146 , G11B5/3163 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： The invention is a perpendicular magnetic recording write head with a write pole, a trapezoidal-shaped trailing shield notch, and a metal gap layer between the write pole and notch. The write pole has a trailing edge that has a width substantially defining the track width and that faces the front edge of the notch but is spaced from it by the gap layer. The write head is fabricated by a process than includes reactive ion beam etching of a thin mask film above the write pole to remove the mask film and widen the opening at the edges of the write pole. The gap layer and notch are deposited into the widened opening above the write pole. The write pole has nonmagnetic filler material, such as alumina, surrounding it except at its trailing edge, where it is in contact with the gap layer, which is formed of a different material than the surrounding filler material.
摘要翻译： 本发明是一种具有写极，梯形后屏蔽切口和写极与刻槽之间的金属间隙层的垂直磁记录写头。 写入极具有后缘，其具有基本上限定轨道宽度的宽度并且面向凹口的前边缘，但是通过间隙层与其间隔开。 写头通过一种工艺制造，而不是包括对写极上方的薄掩模膜的反应离子束蚀刻，以去除掩模膜并加宽写入极的边缘处的开口。 间隙层和凹口沉积在写柱上方的加宽开口中。 写极具有非磁性填充材料，例如氧化铝，除了其后缘外围，其与间隙层接触，间隙层由与周围填料材料不同的材料形成。
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公开(公告)号：US20070245544A1
公开(公告)日：2007-10-25
申请号：US11380189
申请日：2006-04-25
申请人： Donald Allen , Amanda Baer , Michael Feldbaum , Hung-Chin Guthrie , Aron Pentek
发明人： Donald Allen , Amanda Baer , Michael Feldbaum , Hung-Chin Guthrie , Aron Pentek
IPC分类号： G11B5/127
CPC分类号： G11B5/3163 , G11B5/112 , G11B5/1278 , G11B5/3116 , G11B5/3146 , Y10T29/49021 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method for making a write pole in a perpendicular magnetic recording write head uses a metal mask to pattern the primary resist and only ion milling during the subsequent patterning steps. A layer of primary resist is deposited over the magnetic write pole material and a metal mask layer is deposited on the primary resist layer. An imaging resist layer is formed on the metal mask layer and lithographically patterned generally in the desired shape of the write pole. Ion milling without a reactive gas is then performed over the imaging resist pattern to pattern the underlying metal mask layer, which is then used as the mask to define the shape of the primary resist pattern. Ion milling with oxygen is then performed over the metal mask pattern to pattern the underlying primary resist. Ion milling without a reactive gas is then performed over the primary resist pattern to form the underlying write pole.
摘要翻译： 用于在垂直磁记录写头中制作写极的方法使用金属掩模对主抗蚀剂进行图案化，并且在随后的图案化步骤期间仅使用离子铣削。 一层主抗蚀剂沉积在磁写磁极材料上，并且金属掩模层沉积在主抗蚀剂层上。 在金属掩模层上形成成像抗蚀剂层，并且通常以写入极的所需形状进行光刻图案化。 然后在成像抗蚀剂图案上进行无反应气体的离子研磨以对下面的金属掩模层进行图案化，然后将其用作掩模以限定主抗蚀剂图案的形状。 然后在金属掩模图案上进行用氧离子研磨以对下面的主抗蚀剂进行图案化。 然后在主抗蚀剂图案上执行没有反应气体的离子研磨以形成下面的写极。
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公开(公告)号：US20090007416A1
公开(公告)日：2009-01-08
申请号：US12177069
申请日：2008-07-21
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/398 , G11B2005/3996 , Y10T29/49021 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method for constructing a magnetoresistive sensor that avoids shadowing effects of a mask structure during sensor definition. The method includes the use of an antireflective coating (ARC) and a photosensitive mask deposited there over. The photosensitive mask is formed to cover a desired sensor area, leaving non-sensor areas exposed. A reactive ion etch is performed to transfer the pattern of the photosensitive mask onto the underlying ARC layer. The reactive ion etch (RIE) is performed with a relatively high amount of platen power. The higher platen power increases ion bombardment of the wafer, thereby increasing the physical (ie mechanical) component of material removal relative to the chemical component. This increase in the physical component of material removal result in an increased rate of removal of the photosensitive mask material relative to the ion mill resistant mask. This avoids the formation of a bulbous or mushroom shaped photoresist mask and therefore, avoids shadowing effects during subsequent manufacturing processes.
摘要翻译： 一种用于构造磁阻传感器的方法，其在传感器定义期间避免掩模结构的阴影效应。 该方法包括使用沉积在其上的抗反射涂层（ARC）和感光掩模。 形成光敏掩模以覆盖所需的传感器区域，使非传感器区域暴露。 执行反应离子蚀刻以将感光掩模的图案转移到下面的ARC层上。 反应离子蚀刻（RIE）以相对高的压板功率进行。 较高的压板功率增加晶片的离子轰击，从而增加相对于化学组分的材料去除的物理（即机械）组分。 材料去除的物理组分的这种增加导致感光掩模材料相对于耐磨离子磨损掩模的去除速率增加。 这避免了球形或蘑菇状光致抗蚀剂掩模的形成，因此避免了后续制造过程中的阴影效应。
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