公开(公告)号：US20050079709A1

公开(公告)日：2005-04-14

申请号：US10605610

申请日：2003-10-13

申请人： Donald Delehanty ,  James Hannah ,  Daniel Heenan ,  Fen Jamin ,  Laertis Economikos

发明人： Donald Delehanty ,  James Hannah ,  Daniel Heenan ,  Fen Jamin ,  Laertis Economikos

IPC分类号： B24B7/22 ,  B24B37/04 ,  C09G1/04 ,  H01L21/302 ,  H01L21/3105 ,  H01L21/461

CPC分类号： C09G1/04 ,  B24B7/228 ,  H01L21/31053

摘要： Disclosed herein are a system and method of polishing a layer of a substrate. The disclosed method includes providing a polishing apparatus adapted to impart relative movement between a polishing pad and a substrate having a first layer to be polished; providing a liquid medium having a pH between 4 and 11 to an interface between the substrate and the polishing pad, the liquid medium including a pH controlling substance including at least one of an acid and a base, a carbonate and a stabilizer additive comprising at least one selected from the group consisting of amino acids and polyacrylic acid; and moving at least one of the substrate and the polishing pad relative to the other to polish the layer of the substrate.

摘要翻译： 本文公开了一种抛光衬底层的系统和方法。 所公开的方法包括提供适于在抛光垫和具有要抛光的第一层的基底之间施加相对运动的抛光装置; 提供pH在4和11之间的液体介质到基底和抛光垫之间的界面，液体介质包括pH控制物质，其包括酸和碱中的至少一种，碳酸盐和稳定剂添加剂，至少包括 一个选自氨基酸和聚丙烯酸; 并且相对于另一个移动衬底和抛光垫中的至少一个以抛光衬底的层。

公开(公告)号：US20110171832A1

公开(公告)日：2011-07-14

申请号：US12685938

申请日：2010-01-12

申请人： James A. Hagan ,  James Hannah

发明人： James A. Hagan ,  James Hannah

IPC分类号： H01L21/302 ,  C09K13/04 ,  H01L21/304 ,  H01L21/306

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/3212

摘要： The invention is directed to a chemical-mechanical polishing formulation that includes: an abrasive particulate component; iodic acid; and water. The invention is also directed to a method for polishing a metal-containing substrate, the method including the steps of polishing the metal-containing substrate with a polishing pad at a suitable polishing pressure while the metal-containing substrate is in contact with the above polishing formulation.

摘要翻译： 本发明涉及一种化学机械抛光配方，其包括：磨料颗粒组分; 碘酸; 和水。 本发明还涉及一种用于研磨含金属基材的方法，所述方法包括以下步骤：在含金属基材与上述抛光剂接触的同时用适当的抛光压力用抛光垫抛光含金属基材 公式。

公开(公告)号：US08491806B2

公开(公告)日：2013-07-23

申请号：US12685938

申请日：2010-01-12

申请人： James A. Hagan ,  James Hannah

发明人： James A. Hagan ,  James Hannah

IPC分类号： H01L21/302

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/3212

摘要： The invention is directed to a chemical-mechanical polishing formulation that includes: an abrasive particulate component; iodic acid; and water. The invention is also directed to a method for polishing a metal-containing substrate, the method including the steps of polishing the metal-containing substrate with a polishing pad at a suitable polishing pressure while the metal-containing substrate is in contact with the above polishing formulation.

摘要翻译： 本发明涉及一种化学机械抛光配方，其包括：磨料颗粒组分; 碘酸; 和水。 本发明还涉及一种用于研磨含金属基材的方法，所述方法包括以下步骤：在含金属基材与上述抛光剂接触的同时用适当的抛光压力用抛光垫抛光含金属基材 公式。

公开(公告)号：US20060057943A1

公开(公告)日：2006-03-16

申请号：US10711369

申请日：2004-09-14

申请人： Rajasekhar Venigalla ,  James Hannah ,  Timothy McCormack ,  Robert Merkling

发明人： Rajasekhar Venigalla ,  James Hannah ,  Timothy McCormack ,  Robert Merkling

IPC分类号： B24B7/30

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/31053

摘要： By adding silica to ceria-based CMP slurries the polish process starts much faster than without silica thereby eliminating dead time in the polish process and eliminating process instability caused by changes in the dead time with operating conditions. A slurry for performing chemical mechanical polishing (CMP) of patterned oxides (e.g., STI, PMD, ILD) on a substrate, comprises: ceria particles having a concentration of 1.0-5.0 wt % and silica particles having a concentration of 0.1-5.0 wt %. A ratio of ceria concentration to silica concentration (ceria:silica) is from approximately 10:1 to nearly 1:1 by weight. The ceria particles have a particle size of 150-250 nm, and the silica particles have a particle size of greater than 100 nm. The silica may be fumed or colloidal. The slurry has a pH of approximately 9.0.

摘要翻译： 通过向二氧化铈基CMP浆料中添加二氧化硅，抛光过程比无二氧化硅快得多，从而消除抛光过程中的死区，并消除由于操作条件下死区时间变化引起的过程不稳定性。 用于在基材上进行图案化氧化物（例如STI，PMD，ILD）的化学机械抛光（CMP）的浆料包括：浓度为1.0-5.0重量％的二氧化铈颗粒和浓度为0.1-5.0重量％的二氧化硅颗粒 ％。 二氧化铈浓度与二氧化硅浓度（二氧化铈：二氧化硅）的比率为约10:1至约1:1重量比。 二氧化铈粒子的粒径为150〜250nm，二氧化硅粒子的粒径大于100nm。 二氧化硅可以是热解或胶体的。 浆液的pH值约为9.0。