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    Semiconductor optical devices and methods of fabricating the same
    1.
    发明授权
    Semiconductor optical devices and methods of fabricating the same 有权
    半导体光学器件及其制造方法

    公开(公告)号：US08804232B2

    公开(公告)日：2014-08-12

    申请号：US13307067

    申请日：2011-11-30

    申请人： Dong Churl Kim ,  Kisoo Kim ,  Hyun Soo Kim ,  Byung-seok Choi ,  O-Kyun Kwon ,  Jong Sool Jeong ,  Dae Kon Oh

    发明人： Dong Churl Kim ,  Kisoo Kim ,  Hyun Soo Kim ,  Byung-seok Choi ,  O-Kyun Kwon ,  Jong Sool Jeong ,  Dae Kon Oh

    IPC分类号： H01S5/10

    CPC分类号： H01S5/1028 ,  H01S5/0265 ,  H01S5/0425 ,  H01S5/1003 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/2222 ,  H01S2301/16

    摘要： A semiconductor optical device includes a first mode converting core, a light amplification core, a second mode converting core, and a light modulation core disposed in a first mode converting region, a light amplification region, a second mode converting region, and a light modulating region of a semiconductor substrate, respectively, and a current blocking section covering at least sidewalls and a top surface of the light amplification core. The first mode converting core, the light amplification core, the second mode converting core, and the light modulation core are arranged along one direction in the order named, and are connected to each other in butt joints. The current blocking section includes first, second, and third cladding patterns sequentially stacked. The second cladding pattern is doped with dopants of a first conductivity type, and the first and third cladding patterns are doped with dopants of a second conductivity type.

    摘要翻译： 半导体光学器件包括第一模式转换核心，光放大核心，第二模式转换核心和设置在第一模式转换区域中的光调制核心，光放大区域，第二模式转换区域和光调制 区域，以及至少覆盖光放大芯的侧壁和顶表面的电流阻挡部分。 第一模式转换核心，光放大核心，第二模式转换核心和光调制核心按照命名的顺序沿一个方向布置，并且在对接中彼此连接。 电流阻挡部分包括顺序层叠的第一，第二和第三包层图案。 第二包层图案掺杂有第一导电类型的掺杂剂，并且第一和第三包层图案掺杂有第二导电类型的掺杂剂。

    SEMICONDUCTOR OPTICAL DEVICES AND METHODS OF FABRICATING THE SAME
    2.
    发明申请
    SEMICONDUCTOR OPTICAL DEVICES AND METHODS OF FABRICATING THE SAME 有权
    半导体光学器件及其制造方法

    公开(公告)号：US20120281274A1

    公开(公告)日：2012-11-08

    申请号：US13307067

    申请日：2011-11-30

    申请人： Dong Churl KIM ,  Kisoo Kim ,  Hyun Soo Kim ,  Byung-seok Choi ,  O-Kyun Kwon ,  Jong Sool Jeong ,  Dae Kon Oh

    发明人： Dong Churl KIM ,  Kisoo Kim ,  Hyun Soo Kim ,  Byung-seok Choi ,  O-Kyun Kwon ,  Jong Sool Jeong ,  Dae Kon Oh

    IPC分类号： H01S5/20 ,  H01L21/04

    CPC分类号： H01S5/1028 ,  H01S5/0265 ,  H01S5/0425 ,  H01S5/1003 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/2222 ,  H01S2301/16

    摘要： A semiconductor optical device includes a first mode converting core, a light amplification core, a second mode converting core, and a light modulation core disposed in a first mode converting region, a light amplification region, a second mode converting region, and a light modulating region of a semiconductor substrate, respectively, and a current blocking section covering at least sidewalls and a top surface of the light amplification core. The first mode converting core, the light amplification core, the second mode converting core, and the light modulation core are arranged along one direction in the order named, and are connected to each other in butt joints. The current blocking section includes first, second, and third cladding patterns sequentially stacked. The second cladding pattern is doped with dopants of a first conductivity type, and the first and third cladding patterns are doped with dopants of a second conductivity type.

    摘要翻译： 半导体光学器件包括第一模式转换核心，光放大核心，第二模式转换核心和设置在第一模式转换区域中的光调制核心，光放大区域，第二模式转换区域和光调制 区域，以及至少覆盖光放大芯的侧壁和顶表面的电流阻挡部分。 第一模式转换核心，光放大核心，第二模式转换核心和光调制核心按照命名的顺序沿一个方向布置，并且在对接中彼此连接。 电流阻挡部分包括顺序层叠的第一，第二和第三包层图案。 第二包层图案掺杂有第一导电类型的掺杂剂，并且第一和第三包层图案掺杂有第二导电类型的掺杂剂。

    Optical amplifier
    3.
    发明授权
    Optical amplifier 有权
    光放大器

    公开(公告)号：US08594469B2

    公开(公告)日：2013-11-26

    申请号：US12640627

    申请日：2009-12-17

    申请人： Byung-Seok Choi ,  Dae Kon Oh ,  O-Kyun Kwon ,  Dong Churl Kim ,  Kisoo Kim ,  Hyun Soo Kim

    发明人： Byung-Seok Choi ,  Dae Kon Oh ,  O-Kyun Kwon ,  Dong Churl Kim ,  Kisoo Kim ,  Hyun Soo Kim

    IPC分类号： G02F1/035

    CPC分类号： H01S5/50 ,  G02F1/2955 ,  G02F2001/0155 ,  G02F2001/0156 ,  G02F2202/06 ,  G02F2202/101 ,  G02F2202/102 ,  G02F2203/02 ,  G02F2203/15 ,  G02F2203/20 ,  G02F2203/70

    摘要： An optical amplifier includes a passive waveguide region and an active waveguide region. The passive waveguide region is configured to receive an incident optical signal and adjust a mode of the optical signal. The active waveguide region is integrated to the passive waveguide region and configured to perform gain modulation on the optical signal received from the passive waveguide region by changing density of carriers in response to a current applied to the active waveguide region. Internal loss of the active waveguide region is adjusted to produce a resonance effect and thereby to increase bandwidth of the active waveguide. Therefore, the optical amplifier can have a wide bandwidth under a low-current condition.

    摘要翻译： 光放大器包括无源波导区域和有源波导区域。 无源波导区域被配置为接收入射光信号并调整光信号的模式。 有源波导区域被集成到无源波导区域，并被配置为响应于施加到有源波导区域的电流改变载波的密度，对从无源波导区域接收的光信号执行增益调制。 有源波导区域的内部损耗被调节以产生共振效应，从而增加有源波导的带宽。 因此，光放大器可以在低电流条件下具有宽带宽。

    OPTICAL DEVICE MODULE
    4.
    发明申请
    OPTICAL DEVICE MODULE 审中-公开
    光学器件模块

    公开(公告)号：US20110134513A1

    公开(公告)日：2011-06-09

    申请号：US12773196

    申请日：2010-05-04

    申请人： Dong Churl Kim ,  Byung-seok Choi ,  Hyun Soo Kim ,  Kisoo Kim ,  O-Kyun Kwon ,  Dae Kon Oh

    发明人： Dong Churl Kim ,  Byung-seok Choi ,  Hyun Soo Kim ,  Kisoo Kim ,  O-Kyun Kwon ,  Dae Kon Oh

    IPC分类号： H01S5/026 ,  G02B6/26 ,  G02B6/42

    CPC分类号： H01S5/0265 ,  G02B6/1228 ,  G02B6/125 ,  G02B6/2813 ,  H01S5/1014 ,  H01S5/1085 ,  H01S5/50

    摘要： Provided is an optical device module that can improve miniaturization and integration. The optical device module includes a semiconductor optical amplifier having a buried structure and including a first active layer buried in a clad layer disposed on a first substrate, an optical modulator in which a sidewall of a second active layer disposed in a direction of the first active layer on a second substrate junctioned to the first substrate is exposed, the optical modulator having a ridge structure, and at least one multi-mode interference coupler in which the second active layer junctioned to the first active layer is buried in the clad layer, the multi-mode interference coupler sharing the second active layer on the second substrate between the optical modulator and the semiconductor optical amplifier and integrated with the second optical device.

    摘要翻译： 提供了可以改善小型化和集成的光学装置模块。 光学器件模块包括具有掩埋结构的半导体光学放大器，并且包括掩埋在第一衬底上的覆盖层中的第一有源层，光调制器，其中第二有源层的侧壁沿着第一有源层 暴露在与第一衬底相交的第二衬底上的层，光学调制器具有脊结构，以及至少一个多模干涉耦合器，其中与第一有源层结合的第二有源层被掩埋在覆盖层中， 所述多模干涉耦合器在所述光调制器和所述半导体光放大器之间的所述第二基板上共享所述第二有源层并与所述第二光学装置集成。

    Wavelength tunable external cavity laser beam generating device
    6.
    发明授权
    Wavelength tunable external cavity laser beam generating device 有权
    波长可调外腔激光束发生装置

    公开(公告)号：US08363685B2

    公开(公告)日：2013-01-29

    申请号：US13016238

    申请日：2011-01-28

    申请人： Hyun Soo Kim ,  Ki-Hong Yoon ,  Kisoo Kim ,  Byung-Seok Choi ,  O-Kyun Kwon

    发明人： Hyun Soo Kim ,  Ki-Hong Yoon ,  Kisoo Kim ,  Byung-Seok Choi ,  O-Kyun Kwon

    IPC分类号： H01S3/10

    CPC分类号： H01S5/142 ,  B82Y20/00 ,  H01S5/026 ,  H01S5/028 ,  H01S5/1212 ,  H01S5/1215 ,  H01S5/125 ,  H01S5/22 ,  H01S5/34306

    摘要： Provided is a wavelength tunable external cavity laser (laser beam) generating device. The wavelength tunable external cavity laser generating devices includes: an optical amplifier, a comb reflector, and an optical signal processor connected in series on a first substrate; and an external wavelength tunable reflector disposed on a second substrate adjacent to the first substrate and connected to the optical amplifier, wherein the comb reflector includes: a waveguide disposed on the first substrate; a first diffraction grating disposed at one end of the waveguide adjacent to the optical amplifier; and a second diffraction grating disposed at the other end of the waveguide adjacent to the optical signal processor, wherein the optical amplifier, the comb reflector, and the optical signal processor constitute a continuous waveguide.

    摘要翻译： 提供了一种波长可调谐的外腔激光（激光束）产生装置。 所述波长可调外腔激光产生装置包括：串联在第一基板上的光放大器，梳状反射器和光信号处理器; 以及外部波长可调谐反射器，其设置在与所述第一基板相邻并且连接到所述光学放大器的第二基板上，其中所述梳状反射器包括：布置在所述第一基板上的波导; 设置在与光放大器相邻的波导的一端的第一衍射光栅; 以及第二衍射光栅，其设置在与所述光信号处理器相邻的所述波导的另一端处，其中所述光放大器，所述梳状反射器和所述光信号处理器构成连续波导。

    Multi-channel receiver optical sub assembly
    7.
    发明授权
    Multi-channel receiver optical sub assembly 有权
    多通道接收机光子组件

    公开(公告)号：US09229183B2

    公开(公告)日：2016-01-05

    申请号：US14012384

    申请日：2013-08-28

    申请人： Mi-Ran Park ,  Jong Sool Jeong ,  Hyun Soo Kim ,  Byungseok Choi ,  Young Tak Han ,  O-Kyun Kwon

    发明人： Mi-Ran Park ,  Jong Sool Jeong ,  Hyun Soo Kim ,  Byungseok Choi ,  Young Tak Han ,  O-Kyun Kwon

    IPC分类号： H04B10/60 ,  G02B6/42

    CPC分类号： G02B6/4274 ,  G02B6/4249 ,  G02B6/4263 ,  G02B6/4279

    摘要： Disclosed is a multi-channel receiver optical sub assembly. The a multi-channel receiver optical sub assembly includes: a multi-channel PD array, in which a plurality of photodiodes (PDs) disposed on a first capacitor, and including receiving areas disposed at centers thereof and anode electrode pads arranged in an opposite direction at an angle of 180 degrees based on the receiving areas between the adjacent PDs is monolithically integrated; a plurality of transimpedance amplifiers (TIAs) arranged on a plurality of second capacitors, respectively, and connected with the anode pads of the respective PDs through wire bonding; a submount on which the first capacitor.

    摘要翻译： 公开了一种多通道接收机光学子组件。 多通道接收机光学子组件包括：多通道PD阵列，其中设置在第一电容器上的多个光电二极管（PD），并且包括设置在其中心处的接收区域和布置在相反方向的阳极电极焊盘 基于相邻PD之间的接收区域以180度的角度被整体地集成; 分别布置在多个第二电容器上并通过引线接合与相应PD的阳极焊盘连接的多个跨阻抗放大器（TIA）; 第一电容器的基座。

    Optical waveguide platform with hybrid-integrated optical transmission device and optical active device and method of manufacturing the same
    8.
    发明授权
    Optical waveguide platform with hybrid-integrated optical transmission device and optical active device and method of manufacturing the same 有权
    具有混合集成光传输装置和光学有源装置的光波导平台及其制造方法

    公开(公告)号：US09042686B2

    公开(公告)日：2015-05-26

    申请号：US13487807

    申请日：2012-06-04

    申请人： Hyun Soo Kim ,  Jong Sool Jeong ,  Mi-Ran Park ,  Byungseok Choi ,  O-Kyun Kwon

    发明人： Hyun Soo Kim ,  Jong Sool Jeong ,  Mi-Ran Park ,  Byungseok Choi ,  O-Kyun Kwon

    IPC分类号： G02B6/12 ,  G02B6/26 ,  G02B6/42 ,  G02B6/10 ,  G02B6/43 ,  G02B6/122

    CPC分类号： G02B6/43 ,  G02B6/12004 ,  G02B6/1228 ,  G02B6/4224 ,  G02B6/4232

    摘要： Disclosed are an optical waveguide platform with integrated active transmission device and monitoring photodiode. The optical waveguide platform with hybrid integrated optical transmission device and optical active device includes an optical waveguide region formed by stacking a lower cladding layer, a core layer and an upper cladding layer on a substrate; a trench region formed by etching a portion of the optical waveguide region; and a spot expanding region formed on the core layer in the optical waveguide region, in which the optical transmission device is mounted in the trench region and the optical active device is flip-chip bonded to the spot expanding region. The monitoring photodiode is flip-chip bonded to the spot expanding region of the core layer of the optical waveguide, thereby monitoring output light including an optical coupling loss that occurs during flip-chip bonding.

    摘要翻译： 公开了一种具有集成主动传输装置和监测光电二极管的光波导平台。 具有混合集成光传输装置和光学有源装置的光波导平台包括通过在基板上层叠下包层，芯层和上包层而形成的光波导区域; 通过蚀刻光波导区域的一部分形成的沟槽区域; 以及形成在光波导区域的芯层上的点扩展区域，其中光传输装置安装在沟槽区域中，并且光学有源器件被倒装芯片接合到点扩展区域。 监视光电二极管被倒装芯片接合到光波导的芯层的点扩展区域，从而监视包括在倒装芯片接合期间发生的光耦合损耗的输出光。

    Distributed feedback (DFB) quantum dot laser structure
    10.
    发明授权
    Distributed feedback (DFB) quantum dot laser structure 有权
    分布式反馈（DFB）量子点激光器结构

    公开(公告)号：US07551662B2

    公开(公告)日：2009-06-23

    申请号：US12096351

    申请日：2006-11-24

    申请人： Dae Kon Oh ,  Jin Hong Lee ,  Jin Soo Kim ,  Sung Ui Hong ,  Byung Seok Choi ,  Hyun Soo Kim ,  Sung Bock Kim

    发明人： Dae Kon Oh ,  Jin Hong Lee ,  Jin Soo Kim ,  Sung Ui Hong ,  Byung Seok Choi ,  Hyun Soo Kim ,  Sung Bock Kim

    IPC分类号： H01H3/08 ,  H01S5/00

    CPC分类号： H01S5/12 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/3412 ,  H01S5/34306 ,  H01S2301/185

    摘要： A distributed feedback (DFB) quantum dot semiconductor laser structure is provided. The DFB quantum dot semi-conductor laser structure includes: a first clad layer formed on a lower electrode; an optical waveguide (WG) formed on the first clad layer; a grating structure layer formed on the optical WG and including a plurality of periodically disposed gratings; a first separate confinement hetero (SCH) layer formed on the grating structure layer; an active layer formed on the first SCH layer and including at least a quantum dot; a second SCH layer formed on the active layer; a second clad layer formed on the second SCH layer; an ohmic layer formed on the second clad layer; and an upper electrode formed on the ohmic layer. Accordingly, an optical WG is disposed on the opposite side of the active layer from the grating structure layer, thereby increasing single optical mode efficiency. And, an asymmetric multi-electrode structure is used for applying current, thereby maximizing purity and efficiency of the single mode semiconductor laser structure.

    摘要翻译： 提供了分布式反馈（DFB）量子点半导体激光器结构。 DFB量子点半导体激光器结构包括：形成在下电极上的第一覆层; 形成在第一包层上的光波导（WG）; 光栅结构层，形成在光学WG上并且包括多个周期性布置的光栅; 形成在所述光栅结构层上的第一分离限制性杂（SCH）层; 形成在第一SCH层上并包括至少一个量子点的有源层; 形成在所述有源层上的第二SCH层; 形成在第二SCH层上的第二覆层; 形成在所述第二覆盖层上的欧姆层; 和形成在欧姆层上的上电极。 因此，光学WG设置在有源层与光栅结构层的相反侧，从而提高单一光模式效率。 并且，使用非对称多电极结构来施加电流，从而最大化单模半导体激光器结构的纯度和效率。