摘要:
A method for manufacturing a semiconductor device is disclosed. The method includes the steps of defining a trench into a field region of a semiconductor substrate having an active region and the field region; partially filing the trench with a flowable insulation layer; completely filling the trench with an isolation structure by depositing a close-packed insulation layer on the flowable insulation layer in the trench; etching through a portion of the close-packed insulation layer and etching into a partial thickness of the flowable insulation layer of the insulation structure to expose a portion of the active region; cleaning the resultant substrate having the active region relatively projected; forming spacers on etched portions of the flowable insulation layer where bowing occurs during the cleaning step; and forming gates on the active region and the insulation structure to border the exposed portion of the active region.
摘要:
A method for manufacturing a semiconductor device is disclosed. The method includes the steps of defining a trench into a field region of a semiconductor substrate having an active region and the field region; partially filing the trench with a flowable insulation layer; completely filling the trench with an isolation structure by depositing a close-packed insulation layer on the flowable insulation layer in the trench; etching through a portion of the close-packed insulation layer and etching into a partial thickness of the flowable insulation layer of the insulation structure to expose a portion of the active region; cleaning the resultant substrate having the active region relatively projected; forming spacers on etched portions of the flowable insulation layer where bowing occurs during the cleaning step; and forming gates on the active region and the insulation structure to border the exposed portion of the active region.
摘要:
A fin transistor is formed by forming a hard mask layer on a substrate having an active region and a field region. The hard mask layer is etched to expose the field region. A trench is formed by etching the exposed field region. The trench is filled with an SOG layer. The hard mask layer is removed to expose the active region. An epi-silicon layer is formed on the exposed active region. The SOG layer is then partially etched from the upper end of the trench, thus filling a lower portion of the trench. A HDP oxide layer is deposited on the etched SOG layer filling the trench, thereby forming a field oxide layer composed of the SOG layer and the HDP oxide. The HDP oxide layer in the field oxide layer is etched to expose both side surfaces of the epi-silicon layer. A gate is then formed on the epi-silicon layer of which both side surfaces are exposed and the field oxide layer.
摘要:
A fin transistor is formed by forming a hard mask layer on a substrate having an active region and a field region. The hard mask layer is etched to expose the field region. A trench is formed by etching the exposed field region. The trench is filled with an SOG layer. The hard mask layer is removed to expose the active region. An epi-silicon layer is formed on the exposed active region. The SOG layer is then partially etched from the upper end of the trench, thus filling a lower portion of the trench. A HDP oxide layer is deposited on the etched SOG layer filling the trench, thereby forming a field oxide layer composed of the SOG layer and the HDP oxide. The HDP oxide layer in the field oxide layer is etched to expose both side surfaces of the epi-silicon layer. A gate is then formed on the epi-silicon layer of which both side surfaces are exposed and the field oxide layer.
摘要:
A semiconductor device includes a semiconductor substrate having an active region which includes a gate forming zone and an isolation region; an isolation layer formed in the isolation region of the semiconductor substrate to expose side surfaces of a portion of the active region including the gate forming zone, such that the portion of the active region including the gate forming zone constitutes a fin pattern; a silicon epitaxial layer formed on the active region including the fin pattern; and a gate formed to cover the fin pattern on which the silicon epitaxial layer is formed.
摘要:
An isolation structure of a semiconductor device is formed by forming a hard mask layer on a semiconductor substrate having active and field regions to expose the field region. A trench is defined by etching the exposed field region of the semiconductor substrate using the hard mask as an etch mask. An SOG layer is formed in the trench partially filling the trench. An amorphous aluminum oxide layer is formed on the resultant substrate including the SOG layer. An HDP layer is formed on the amorphous aluminum oxide layer to completely fill the trench. The HDP layer and the amorphous aluminum oxide layer are subjected to CMP to expose the hard mask. The hard mask and portions of the amorphous aluminum oxide layer that are formed on the HDP layer are removed. The amorphous aluminum oxide layer is crystallized.
摘要:
A semiconductor device includes a semiconductor substrate having an active region which includes a gate forming zone and an isolation region; an isolation layer formed in the isolation region of the semiconductor substrate to expose side surfaces of a portion of the active region including the gate forming zone, such that the portion of the active region including the gate forming zone constitutes a fin pattern; a silicon epitaxial layer formed on the active region including the fin pattern; and a gate formed to cover the fin pattern on which the silicon epitaxial layer is formed.
摘要:
An isolation structure of a semiconductor device is formed by forming a hard mask layer on a semiconductor substrate having active and field regions to expose the field region. A trench is defined by etching the exposed field region of the semiconductor substrate using the hard mask as an etch mask. An SOG layer is formed in the trench partially filling the trench. An amorphous aluminum oxide layer is formed on the resultant substrate including the SOG layer. An HDP layer is formed on the amorphous aluminum oxide layer to completely fill the trench. The HDP layer and the amorphous aluminum oxide layer are subjected to CMP to expose the hard mask. The hard mask and portions of the amorphous aluminum oxide layer that are formed on the HDP layer are removed. The amorphous aluminum oxide layer is crystallized.
摘要:
An isolation structure of a semiconductor device is formed by forming a hard mask layer on a semiconductor substrate having active and field regions to expose the field region. A trench is defined by etching the exposed field region of the semiconductor substrate using the hard mask as an etch mask. An SOG layer is formed in the trench partially filling the trench. An amorphous aluminum oxide layer is formed on the resultant substrate including the SOG layer. An HDP layer is formed on the amorphous aluminum oxide layer to completely fill the trench. The HDP layer and the amorphous aluminum oxide layer are subjected to CMP to expose the hard mask. The hard mask and portions of the amorphous aluminum oxide layer that are formed on the HDP layer are removed. The amorphous aluminum oxide layer is crystallized.
摘要:
A method for fabricating an isolation layer in a semiconductor device is disclosed. The disclosed method comprises steps of: forming a trench on a semiconductor substrate; forming a flowing insulating layer within the trench; making the insulating layer precise; and forming a precise insulating layer over an upper surface of the whole structure on which the flowing insulating layer is formed. According to the method of fabricating an isolation layer in a semiconductor device, occurrence of fine pores at adjacent active regions of sidewalls in a trench can be prevented.