公开(公告)号：US20100181588A1

公开(公告)日：2010-07-22

申请号：US12628467

申请日：2009-12-01

申请人： Dong Yul LEE ,  Seong Ju Park ,  Min Ki Kwon ,  Chu Young Cho ,  Chang Hee Cho ,  Yong Chun Kim ,  Seung Beom Seo ,  Myung Goo Cheong ,  Dong Joon Kim

发明人： Dong Yul LEE ,  Seong Ju Park ,  Min Ki Kwon ,  Chu Young Cho ,  Chang Hee Cho ,  Yong Chun Kim ,  Seung Beom Seo ,  Myung Goo Cheong ,  Dong Joon Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/02 ,  H01L33/06

摘要： Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer disposed therebetween, and a surface plasmon layer disposed between the active layer and at least one of the n-type and p-type semiconductor layers, including metallic particles and an insulating material, and including a conductive via for electrical connection between the active layer and the at least one of the n-type and p-type semiconductor layers, wherein the metallic particles are enclosed by the insulating material to be insulated from the at least one of the n-type and p-type semiconductor layers. The semiconductor light emitting device can achieve enhanced emission efficiency by using surface plasmon resonance. Using the semiconductor light emitting device, the diffusion of a metal employed for surface plasmon resonance into the active layer can be minimized.

摘要翻译： 公开了一种半导体发光器件。 半导体发光器件包括n型半导体层，p型半导体层和设置在其间的有源层，以及设置在有源层与n型和p型之间的至少一种之间的表面等离子体膜层 包括金属颗粒和绝缘材料的半导体层，并且包括用于在有源层和n型和p型半导体层中的至少一个之间电连接的导电通孔，其中金属颗粒被绝缘材料包围 与n型和p型半导体层中的至少一种绝缘。 半导体发光器件可以通过使用表面等离子体共振来实现增强的发射效率。 使用半导体发光器件，可以将用于表面等离子体共振的金属的扩散最小化。

公开(公告)号：US08269242B2

公开(公告)日：2012-09-18

申请号：US12628467

申请日：2009-12-01

申请人： Dong Yul Lee ,  Seong Ju Park ,  Min Ki Kwon ,  Chu Young Cho ,  Chang Hee Cho ,  Yong Chun Kim ,  Seung Beom Seo ,  Myung Goo Cheong ,  Dong Joon Kim

发明人： Dong Yul Lee ,  Seong Ju Park ,  Min Ki Kwon ,  Chu Young Cho ,  Chang Hee Cho ,  Yong Chun Kim ,  Seung Beom Seo ,  Myung Goo Cheong ,  Dong Joon Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/02 ,  H01L33/06

摘要： Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer disposed therebetween, and a surface plasmon layer disposed between the active layer and at least one of the n-type and p-type semiconductor layers, including metallic particles and an insulating material, and including a conductive via for electrical connection between the active layer and the at least one of the n-type and p-type semiconductor layers, wherein the metallic particles are enclosed by the insulating material to be insulated from the at least one of the n-type and p-type semiconductor layers. The semiconductor light emitting device can achieve enhanced emission efficiency by using surface plasmon resonance. Using the semiconductor light emitting device, the diffusion of a metal employed for surface plasmon resonance into the active layer can be minimized.

摘要翻译： 公开了一种半导体发光器件。 半导体发光器件包括n型半导体层，p型半导体层和设置在其间的有源层，以及设置在有源层与n型和p型之间的至少一种之间的表面等离子体膜层 包括金属颗粒和绝缘材料的半导体层，并且包括用于在有源层和n型和p型半导体层中的至少一个之间电连接的导电通孔，其中金属颗粒被绝缘材料包围 与n型和p型半导体层中的至少一种绝缘。 半导体发光器件可以通过使用表面等离子体共振来实现增强的发射效率。 使用半导体发光器件，可以将用于表面等离子体共振的金属的扩散最小化。

公开(公告)号：US07763881B2

公开(公告)日：2010-07-27

申请号：US12182509

申请日：2008-07-30

申请人： Dong Yul Lee ,  Seong Ju Park ,  Min Ki Kwon ,  Ja Yeon Kim ,  Dong Joon Kim ,  Yong Chun Kim ,  Je Won Kim

发明人： Dong Yul Lee ,  Seong Ju Park ,  Min Ki Kwon ,  Ja Yeon Kim ,  Dong Joon Kim ,  Yong Chun Kim ,  Je Won Kim

IPC分类号： H01L29/06

CPC分类号： H01L33/08 ,  H01L33/44 ,  H01L2933/0083

摘要： There is provided a photonic crystal light emitting device including: a substrate; a plurality of nano rod light emitting structures formed on the substrate to be spaced apart from one another, each of the nano rod light emitting structures including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; and first and second electrodes electrically connected to the first and second conductivity type semiconductor layers, respectively, wherein the nano rod light emitting structures are arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the nano rod light emitting structures define a photonic crystal structure. In the photonic crystal light emitting device, the nano rod light emitting structures are arranged to define a photonic crystal to enhance light extraction efficiency.

摘要翻译： 提供了一种光子晶体发光器件，包括：衬底; 形成在所述基板上彼此间隔开的多个纳米棒状发光结构，所述纳米棒状发光结构包括第一导电型半导体层，有源层和第二导电型半导体层; 以及分别与第一和第二导电类型半导体层电连接的第一和第二电极，其中纳米棒发光结构以预定的尺寸和周期排列，以形成从有源层发射的光的光子带隙， 由此纳米棒发光结构限定了光子晶体结构。 在光子晶体发光器件中，纳米棒发光结构被布置成限定光子晶体以增强光提取效率。

公开(公告)号：US20090032800A1

公开(公告)日：2009-02-05

申请号：US12182509

申请日：2008-07-30

申请人： Dong Yul Lee ,  Seong Ju Park ,  Min Ki Kwon ,  Ja Yeon Kim ,  Dong Joon Kim ,  Yong Chun Kim ,  Je Won Kim

发明人： Dong Yul Lee ,  Seong Ju Park ,  Min Ki Kwon ,  Ja Yeon Kim ,  Dong Joon Kim ,  Yong Chun Kim ,  Je Won Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/08 ,  H01L33/44 ,  H01L2933/0083

摘要： There is provided a photonic crystal light emitting device including: a substrate; a plurality of nano rod light emitting structures formed on the substrate to be spaced apart from one another, each of the nano rod light emitting structures including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; and first and second electrodes electrically connected to the first and second conductivity type semiconductor layers, respectively, wherein the nano rod light emitting structures are arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the nano rod light emitting structures define a photonic crystal structure. In the photonic crystal light emitting device, the nano rod light emitting structures are arranged to define a photonic crystal to enhance light extraction efficiency.

摘要翻译： 提供了一种光子晶体发光器件，包括：衬底; 形成在所述基板上彼此间隔开的多个纳米棒状发光结构，所述纳米棒状发光结构包括第一导电型半导体层，有源层和第二导电型半导体层; 以及分别与第一和第二导电类型半导体层电连接的第一和第二电极，其中纳米棒发光结构以预定的尺寸和周期排列，以形成从有源层发射的光的光子带隙， 由此纳米棒发光结构限定了光子晶体结构。 在光子晶体发光器件中，纳米棒发光结构被布置成限定光子晶体以增强光提取效率。

公开(公告)号：US08410497B2

公开(公告)日：2013-04-02

申请号：US12338438

申请日：2008-12-18

申请人： Sang Won Kang ,  Seong Ju Park ,  Joo Young Cho ,  Il Kyu Park ,  Yong Chun Kim ,  Dong Joon Kim ,  Jeong Tak Oh ,  Je Won Kim

发明人： Sang Won Kang ,  Seong Ju Park ,  Joo Young Cho ,  Il Kyu Park ,  Yong Chun Kim ,  Dong Joon Kim ,  Jeong Tak Oh ,  Je Won Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/02 ,  H01L33/14 ,  H01L33/32 ,  H01L33/387 ,  H01L33/40 ,  H01L33/641

摘要： There is provided a semiconductor light emitting device that can easily dissipate heat, improve current spreading efficiency, and reduce defects by blocking dislocations occurring when a semiconductor layer is grown to thereby increase reliability. A semiconductor light emitting device including a substrate, a light emitting structure having an n-type semiconductor layer, an active layer, and a p-type semiconductor layer sequentially laminated, and an n-type electrode and a p-type electrode formed on the n-type semiconductor layer and the p-type semiconductor layer, respectively, according to an aspect of the invention may include: a metal layer formed in the n-type semiconductor layer and contacting the n-type electrode.

摘要翻译： 提供了一种半导体发光器件，其可以容易地散热，提高电流扩散效率，并且通过阻止半导体层生长时发生的位错从而降低可靠性，从而减少缺陷。 一种半导体发光器件，包括基板，依次层叠有n型半导体层，有源层和p型半导体层的发光结构，以及形成在所述n型半导体层上的n型电极和p型电极 n型半导体层和p型半导体层可以包括：形成在n型半导体层中并与n型电极接触的金属层。

公开(公告)号：US20100019258A1

公开(公告)日：2010-01-28

申请号：US12338438

申请日：2008-12-18

申请人： Sang Won KANG ,  Seong Ju Park ,  Joo Young Cho ,  Il Kyu Park ,  Yong Chun Kim ,  Dong Joon Kim ,  Jeong Tak Oh ,  Je Won Kim

发明人： Sang Won KANG ,  Seong Ju Park ,  Joo Young Cho ,  Il Kyu Park ,  Yong Chun Kim ,  Dong Joon Kim ,  Jeong Tak Oh ,  Je Won Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/02 ,  H01L33/14 ,  H01L33/32 ,  H01L33/387 ,  H01L33/40 ,  H01L33/641

摘要： There is provided a semiconductor light emitting device that can easily dissipate heat, improve current spreading efficiency, and reduce defects by blocking dislocations occurring when a semiconductor layer is grown to thereby increase reliability. A semiconductor light emitting device including a substrate, a light emitting structure having an n-type semiconductor layer, an active layer, and a p-type semiconductor layer sequentially laminated, and an n-type electrode and a p-type electrode formed on the n-type semiconductor layer and the p-type semiconductor layer, respectively, according to an aspect of the invention may include: a metal layer formed in the n-type semiconductor layer and contacting the n-type electrode.

摘要翻译： 提供了一种半导体发光器件，其可以容易地散热，提高电流扩散效率，并且通过阻止半导体层生长时发生的位错从而降低可靠性，从而减少缺陷。 一种半导体发光器件，包括基板，依次层叠有n型半导体层，有源层和p型半导体层的发光结构，以及形成在所述n型半导体层上的n型电极和p型电极 n型半导体层和p型半导体层可以包括：形成在n型半导体层中并与n型电极接触的金属层。

公开(公告)号：US07888670B2

公开(公告)日：2011-02-15

申请号：US12081272

申请日：2008-04-14

申请人： Sang Heon Han ,  Sang Won Kang ,  Jeong Tak Oh ,  Seung Beom Seo ,  Dong Joon Kim ,  Hyun Wook Shim

发明人： Sang Heon Han ,  Sang Won Kang ,  Jeong Tak Oh ,  Seung Beom Seo ,  Dong Joon Kim ,  Hyun Wook Shim

IPC分类号： H01L33/00

CPC分类号： H01L33/06 ,  H01L33/12 ,  H01L33/30

摘要： There is provided a nitride semiconductor light emitting device including: an n-type semiconductor region; an active layer formed on the n-type semiconductor region; a p-type semiconductor region formed on the active layer; an n-electrode disposed in contact with the n-type semiconductor region; a p-electrode formed on the p-type semiconductor region; and at least one intermediate layer formed in at least one of the n-type semiconductor region and the p-type semiconductor region, the intermediate layer disposed above the n-electrode, wherein the intermediate layer is formed of a multi-layer structure where at least three layers with different band gaps from one another are deposited, wherein the multi-layer structure includes one of an AlGaN layer/GaN layer/InGaN layer stack and an InGaN layer/GaN layer/AlGaN layer stack.

摘要翻译： 提供了一种氮化物半导体发光器件，包括：n型半导体区域; 形成在n型半导体区域上的有源层; 形成在有源层上的p型半导体区域; 与n型半导体区域接触的n电极; 形成在p型半导体区域上的p电极; 以及形成在n型半导体区域和p型半导体区域中的至少一个中的至少一个中间层，设置在n电极上方的中间层，其中中间层由多层结构形成，其中在 沉积具有彼此不同带隙的至少三层，其中多层结构包括AlGaN层/ GaN层/ InGaN层堆叠和InGaN层/ GaN层/ AlGaN层堆叠之一。

公开(公告)号：US20080251781A1

公开(公告)日：2008-10-16

申请号：US12081272

申请日：2008-04-14

申请人： Sang Heon Han ,  Sang Won Kang ,  Jeong Tak Oh ,  Seung Beom Seo ,  Dong Joon Kim ,  Hyun Wook Shim

发明人： Sang Heon Han ,  Sang Won Kang ,  Jeong Tak Oh ,  Seung Beom Seo ,  Dong Joon Kim ,  Hyun Wook Shim

IPC分类号： H01L33/00

CPC分类号： H01L33/06 ,  H01L33/12 ,  H01L33/30

摘要： There is provided a nitride semiconductor light emitting device including: an n-type semiconductor region; an active layer formed on the n-type semiconductor region; a p-type semiconductor region formed on the active layer; an n-electrode disposed in contact with the n-type semiconductor region; a p-electrode formed on the p-type semiconductor region; and at least one intermediate layer formed in at least one of the n-type semiconductor region and the p-type semiconductor region, the intermediate layer disposed above the n-electrode, wherein the intermediate layer is formed of a multi-layer structure where at least three layers with different band gaps from one another are deposited, wherein the multi-layer structure includes one of an AlGaN layer/GaN layer/InGaN layer stack and an InGaN layer/GaN layer/AlGaN layer stack.

摘要翻译： 提供了一种氮化物半导体发光器件，包括：n型半导体区域; 形成在n型半导体区域上的有源层; 形成在有源层上的p型半导体区域; 与n型半导体区域接触的n电极; 形成在p型半导体区域上的p电极; 以及形成在n型半导体区域和p型半导体区域中的至少一个中的至少一个中间层，设置在n电极上方的中间层，其中中间层由多层结构形成，其中在 沉积具有彼此不同带隙的至少三层，其中多层结构包括AlGaN层/ GaN层/ InGaN层堆叠和InGaN层/ GaN层/ AlGaN层堆叠之一。

公开(公告)号：US06303404B1

公开(公告)日：2001-10-16

申请号：US09322393

申请日：1999-05-28

申请人： Yong Tae Moon ,  Dong Joon Kim ,  Keun Man Song ,  Seong Ju Park

发明人： Yong Tae Moon ,  Dong Joon Kim ,  Keun Man Song ,  Seong Ju Park

IPC分类号： H01L2100

CPC分类号： H01L33/08 ,  H01L33/0095 ,  H01L33/32

摘要： Disclosed is a method for fabricating a white LED which comprises, as a single active layer, an InGaN thin film which enables emission of white light. The InGaN thin film is constructed by taking advantage of the spinodal decomposition of the ternary compound and rapid thermal annealing. When growing the InGaN thin film on an n-type GaN formed on a sappier substrate under a growth condition, the thin film undergoes spinodal decomposition into two phases which show photoluminescence of a wavelength range from violet to blue and from green to blue, respectively, after which the surface of the thin film is thermally stabilized by rapid thermal annealing and the photoluminescence of the In-deficient phase is improved, so as to give intensive white photoluminescence to the InGaN single active layer. The LED which recruits such a single active InGaN thin film is superb in light emission efficiency and can be fabricated in a significantly reduced process steps.

摘要翻译： 公开了一种制造白光LED的方法，其包括作为单个有源层的能够发射白光的InGaN薄膜。 通过利用三元化合物的旋节分解和快速热退火构成InGaN薄膜。 当在生长条件下在形成在增幅器衬底上的n型GaN上生长InGaN薄膜时，薄膜经历亚稳态分解成两相，分别显示从紫色到蓝色和从绿色到蓝色的波长范围的光致发光， 之后通过快速热退火热稳定薄膜表面，提高了In缺陷相的光致发光，从而为InGaN单一有源层提供强烈的白色光致发光。 招募这种单一活性InGaN薄膜的LED在发光效率方面是极好的，并且可以以显着降低的工艺步骤制造。

公开(公告)号：US08129711B2

公开(公告)日：2012-03-06

申请号：US12171570

申请日：2008-07-11

申请人： Sang Won Kang ,  Yong Chun Kim ,  Dong Hyun Cho ,  Jeong Tak Oh ,  Dong Joon Kim

发明人： Sang Won Kang ,  Yong Chun Kim ,  Dong Hyun Cho ,  Jeong Tak Oh ,  Dong Joon Kim

IPC分类号： H01L29/06

CPC分类号： H01L33/0075 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32

摘要： The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.

摘要翻译： 本发明涉及改进了静电放电（ESD）公差（耐受性）的GaN基氮化物系发光器件及其制造方法，其包括基板和由n型氮化物半导体制成的V形失真结构 层，有源层和p型氮化物半导体层，并且基于n型氮化物半导体层形成。