公开(公告)号：US20080136552A1

公开(公告)日：2008-06-12

申请号：US11875604

申请日：2007-10-19

申请人： Dong Young Kim ,  Jae Kyoung Mun ,  Dong Suk Jun ,  Hae Cheon Kim

发明人： Dong Young Kim ,  Jae Kyoung Mun ,  Dong Suk Jun ,  Hae Cheon Kim

IPC分类号： H03H7/38

CPC分类号： H01P5/08 ,  H01L2924/19107

摘要： Provided is a microwave module having a converter for improving transmission characteristics in a millimeter-wave band. When a microstrip transmission line and a conductor-backed coplanar waveguide (CBCPW) transmission line are connected by wire bonding, a change in impedance caused by wire bonding and an abrupt change in electric field components between the two transmission lines are reduced by the converter. Therefore, insertion loss and return loss are reduced, and transmission characteristics in a millimeter-wave band are improved.

摘要翻译： 提供了一种具有用于改善毫米波段中的传输特性的转换器的微波模块。 当微带传输线和导体背面共面波导（CBCPW）传输线通过引线接合连接时，通过引线键合引起的阻抗变化和两条传输线之间的电场分量的突然变化被转换器减少。 因此，降低了插入损耗和回波损耗，提高了毫米波段的传输特性。

公开(公告)号：US08319689B2

公开(公告)日：2012-11-27

申请号：US12633466

申请日：2009-12-08

申请人： Dong-Young Kim ,  Hae Cheon Kim

发明人： Dong-Young Kim ,  Hae Cheon Kim

IPC分类号： H01Q1/38

CPC分类号： H01Q9/0442 ,  H01Q1/48 ,  H01Q9/0407

摘要： Provided is a millimeter wave band patch antenna. The patch antenna includes a multi-layer substrate, at least one metal pattern layer, an antenna patch, a ground layer, and a plurality of vias. In the multi-layer substrate, a plurality of dielectric layers are stacked. The metal pattern layer is disposed between the dielectric layers except for a center region of the multi-layer substrate. The antenna patch is disposed on an upper surface of the multi-layer substrate in the center region. The ground layer is disposed on a lower surface of the multi-layer substrate opposing to the upper surface. The vias is disposed around the center region through the dielectric layers for electrically connecting the metal pattern layer to the ground layer. The center region, which is surrounded by the ground layer and the vias, functions as a resonator.

摘要翻译： 提供了一种毫米波带贴片天线。 贴片天线包括多层衬底，至少一个金属图案层，天线贴片，接地层和多个通孔。 在多层基板中堆叠多个电介质层。 金属图案层设置在除了多层基板的中心区域之外的介电层之间。 天线贴片在中心区域设置在多层基板的上表面上。 接地层设置在与上表面相对的多层基板的下表面上。 通孔通过电介质层设置在中心区域周围，用于将金属图案层电连接到接地层。 由接地层和通孔包围的中心区域用作谐振器。

公开(公告)号：US08058658B2

公开(公告)日：2011-11-15

申请号：US12421130

申请日：2009-04-09

申请人： Sang-Heung Lee ,  Hae Cheon Kim ,  Dong Min Kang ,  Dong-Young Kim ,  Jae Kyoung Mun ,  Hokyun Ahn ,  Jong-Won Lim ,  Woo Jin Chang ,  Hong Gu Ji ,  Eun Soo Nam

发明人： Sang-Heung Lee ,  Hae Cheon Kim ,  Dong Min Kang ,  Dong-Young Kim ,  Jae Kyoung Mun ,  Hokyun Ahn ,  Jong-Won Lim ,  Woo Jin Chang ,  Hong Gu Ji ,  Eun Soo Nam

IPC分类号： H01L27/15

CPC分类号： H01L25/167 ,  H01L2224/0603 ,  H01L2224/45014 ,  H01L2224/48137 ,  H01L2224/4903 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/30107 ,  H01L2924/00

摘要： Provided is a high-speed optical interconnection device. The high-speed optical interconnection device includes a first semiconductor chip, light emitters, optical detectors, and a second semiconductor chip, which are disposed on a silicon-on-insulator (SOI) substrate. The light emitters receive electrical signals from the first semiconductor chip to output optical signals. The optical detectors detect the optical signals to convert the optical signals into electrical signals. The second semiconductor chip receives the electrical signals converted by the optical detectors.

摘要翻译： 提供了一种高速光互连装置。 高速光互连装置包括设置在绝缘体上硅（SOI））衬底上的第一半导体芯片，发光体，光检测器和第二半导体芯片。 光发射器接收来自第一半导体芯片的电信号以输出光信号。 光检测器检测光信号，将光信号转换为电信号。 第二半导体芯片接收由光学检测器转换的电信号。

公开(公告)号：US07889023B2

公开(公告)日：2011-02-15

申请号：US12139046

申请日：2008-06-13

申请人： Jae Kyoung Mun ,  Dong Young Kim ,  Jong Won Lim ,  Ho Kyun Ahn ,  Hae Cheon Kim ,  Hyun Kyu Yu

发明人： Jae Kyoung Mun ,  Dong Young Kim ,  Jong Won Lim ,  Ho Kyun Ahn ,  Hae Cheon Kim ,  Hyun Kyu Yu

IPC分类号： H01P1/10 ,  H01P3/08

CPC分类号： H03K17/063 ,  H01P1/15 ,  H03K17/693 ,  H03K2017/066

摘要： Provided is a switching circuit for a millimeter waveband control circuit. The switching circuit for a millimeter waveband control circuit includes a switching cell disposed on a signal port path to match an interested frequency and including at least one transistor coupled vertically to an input/output transmission line and a plurality of ground via holes disposed symmetrically in an upper portion and a lower portion of the input/output transmission line; capacitors for stabilizing a bias of the switching cell; and bias pads coupled in parallel to the capacitor to control the switching cell. Therefore, the switching circuit may be useful to improve its isolation by simplifying its design and layout through the use of symmetrical structure of optimized switching cells without the separate use of different switch elements, and also to reduce its manufacturing cost through the improved yield of the manufacturing process and the enhanced integration since it is possible to reduce a chip size of an integrated circuit in addition to its low insertion loss.

摘要翻译： 提供了一种用于毫米波段控制电路的开关电路。 毫米波段控制电路的开关电路包括设置在信号端口路径上以匹配感兴趣频率并且包括垂直于输入/输出传输线耦合的至少一个晶体管的开关单元和对称地布置在其中的多个接地通孔 输入/输出传输线的上部和下部; 用于稳定开关电池的偏置的电容器; 以及与电容器并联耦合的偏置焊盘以控制开关单元。 因此，切换电路可能有助于通过简化其设计和布局来改善其隔离，通过使用优化的开关电池的对称结构，而不需要分开使用不同的开关元件，并且还可以通过提高产量来提高其制造成本 制造工艺和增强的集成，因为除了低插入损耗之外，可以减小集成电路的芯片尺寸。

公开(公告)号：US20100133551A1

公开(公告)日：2010-06-03

申请号：US12421130

申请日：2009-04-09

申请人： Sang-Heung Lee ,  Hae Cheon Kim ,  Dong Min Kang ,  Dong-Young Kim ,  Jae-Kyoung Mun ,  Hokyun Ahn ,  Jong-Won Lim ,  Woo Jin Chang ,  Hong Gu Ji ,  Eun Soo Nam

发明人： Sang-Heung Lee ,  Hae Cheon Kim ,  Dong Min Kang ,  Dong-Young Kim ,  Jae-Kyoung Mun ,  Hokyun Ahn ,  Jong-Won Lim ,  Woo Jin Chang ,  Hong Gu Ji ,  Eun Soo Nam

IPC分类号： H01L31/147 ,  H01L33/00

CPC分类号： H01L25/167 ,  H01L2224/0603 ,  H01L2224/45014 ,  H01L2224/48137 ,  H01L2224/4903 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/30107 ,  H01L2924/00

摘要： Provided is a high-speed optical interconnection device. The high-speed optical interconnection device includes a first semiconductor chip, light emitters, optical detectors, and a second semiconductor chip, which are disposed on a silicon-on-insulator (SOI) substrate. The light emitters receive electrical signals from the first semiconductor chip to output optical signals. The optical detectors detect the optical signals to convert the optical signals into electrical signals. The second semiconductor chip receives the electrical signals converted by the optical detectors.

摘要翻译： 提供了一种高速光互连装置。 高速光互连装置包括设置在绝缘体上硅（SOI））衬底上的第一半导体芯片，发光体，光检测器和第二半导体芯片。 光发射器接收来自第一半导体芯片的电信号以输出光信号。 光检测器检测光信号，将光信号转换为电信号。 第二半导体芯片接收由光学检测器转换的电信号。

公开(公告)号：US07548143B2

公开(公告)日：2009-06-16

申请号：US11875604

申请日：2007-10-19

申请人： Dong Young Kim ,  Jae Kyoung Mun ,  Dong Suk Jun ,  Hae Cheon Kim

发明人： Dong Young Kim ,  Jae Kyoung Mun ,  Dong Suk Jun ,  Hae Cheon Kim

IPC分类号： H01P3/08 ,  H03H7/38

CPC分类号： H01P5/08 ,  H01L2924/19107

摘要： Provided is a microwave module having a converter for improving transmission characteristics in a millimeter-wave band. When a microstrip transmission line and a conductor-backed coplanar waveguide (CBCPW) transmission line are connected by wire bonding, a change in impedance caused by wire bonding and an abrupt change in electric field components between the two transmission lines are reduced by the converter. Therefore, insertion loss and return loss are reduced, and transmission characteristics in a millimeter-wave band are improved.

摘要翻译： 提供了一种具有用于改善毫米波段中的传输特性的转换器的微波模块。 当微带传输线和导体背面共面波导（CBCPW）传输线通过引线接合连接时，通过引线键合引起的阻抗变化和两条传输线之间的电场分量的突然变化被转换器减少。 因此，降低了插入损耗和回波损耗，提高了毫米波段的传输特性。

公开(公告)号：US20110057853A1

公开(公告)日：2011-03-10

申请号：US12633466

申请日：2009-12-08

申请人： Dong-Young KIM ,  Hae Cheon Kim

发明人： Dong-Young KIM ,  Hae Cheon Kim

IPC分类号： H01Q1/38 ,  H01Q1/48

CPC分类号： H01Q9/0442 ,  H01Q1/48 ,  H01Q9/0407

摘要： Provided is a millimeter wave band patch antenna. The patch antenna includes a multi-layer substrate, at least one metal pattern layer, an antenna patch, a ground layer, and a plurality of vias. In the multi-layer substrate, a plurality of dielectric layers are stacked. The metal pattern layer is disposed between the dielectric layers except for a center region of the multi-layer substrate. The antenna patch is disposed on an upper surface of the multi-layer substrate in the center region. The ground layer is disposed on a lower surface of the multi-layer substrate opposing to the upper surface. The vias is disposed around the center region through the dielectric layers for electrically connecting the metal pattern layer to the ground layer. The center region, which is surrounded by the ground layer and the vias, functions as a resonator.

摘要翻译： 提供了一种毫米波带贴片天线。 贴片天线包括多层衬底，至少一个金属图案层，天线贴片，接地层和多个通孔。 在多层基板中堆叠多个电介质层。 金属图案层设置在除了多层基板的中心区域之外的介电层之间。 天线贴片在中心区域设置在多层基板的上表面上。 接地层设置在与上表面相对的多层基板的下表面上。 通孔通过电介质层设置在中心区域周围，用于将金属图案层电连接到接地层。 由接地层和通孔包围的中心区域用作谐振器。

公开(公告)号：US08294521B2

公开(公告)日：2012-10-23

申请号：US12855055

申请日：2010-08-12

申请人： Dong Min Kang ,  Hong Gu Ji ,  Hokyun Ahn ,  Jong-Won Lim ,  Woojin Chang ,  Sang-Heung Lee ,  Dong-Young Kim ,  Hae Cheon Kim

发明人： Dong Min Kang ,  Hong Gu Ji ,  Hokyun Ahn ,  Jong-Won Lim ,  Woojin Chang ,  Sang-Heung Lee ,  Dong-Young Kim ,  Hae Cheon Kim

IPC分类号： H03F3/04

CPC分类号： H03F3/24 ,  H03F1/565 ,  H03F3/195 ,  H03F2200/222

摘要： Provided is a power amplifier including: a depletion mode high electron mobility transistor (D-mode HEMT) configured to amplify a signal inputted to a gate terminal and output the amplified signal through a drain terminal; an input matching circuit configured to serially ground the gate terminal; and a DC bias circuit connected between the drain terminal and a ground. Through the foregoing configuration, the HEMT may be biased only by a single DC bias circuit without any biasing means to provide a negative voltage. Also, superior matching characteristic may be provided in various operation frequency bands through a shunt inductor and a choke inductor.

摘要翻译： 提供了一种功率放大器，包括：耗尽型高电子迁移率晶体管（D模式HEMT），被配置为放大输入到栅极端子的信号，并通过漏极端子输出放大的信号; 输入匹配电路，被配置为使所述栅极端子串联接地; 以及连接在漏极端子和地之间的DC偏置电路。 通过上述配置，HEMT可以仅由单个DC偏置电路偏压而没有任何偏置装置来提供负电压。 此外，可以通过并联电感器和扼流电感器在各种工作频带中提供优异的匹配特性。

公开(公告)号：US07671697B2

公开(公告)日：2010-03-02

申请号：US11928410

申请日：2007-10-30

申请人： Jae Kyoung Mun ,  Hae Cheon Kim ,  Dong Young Kim ,  Jong Won Lim ,  Ho Kyun Ahn ,  Hyun Kyu Yu

发明人： Jae Kyoung Mun ,  Hae Cheon Kim ,  Dong Young Kim ,  Jong Won Lim ,  Ho Kyun Ahn ,  Hyun Kyu Yu

IPC分类号： H01P1/10 ,  H01L29/80

CPC分类号： H01P1/15

摘要： Provided is a high-isolation switching device for a millimeter-wave band control circuit. By optimizing a cell structure to improve the isolation of an off-state without deteriorating the insertion loss of an on-state, it is possible to implement a high-isolation switching device useful in the design and manufacture of a millimeter-wave band control circuit such as a phase shifter or digital attenuator using switching characteristics. In addition, when a switch microwave monolithic integrated circuit (MMIC) is designed to use the switching device, it is not necessary to use a multi-stage shunt field effect transistor (FET) to improve isolation, nor to dispose an additional λ/4 transformer transmission line, inductor or capacitor near the switching device. Thus, chip size can be reduced, degree of integration can be enhanced, and manufacturing yield can be increased. Consequently, it is possible to reduce manufacturing cost.

摘要翻译： 提供了一种用于毫米波段控制电路的高隔离开关装置。 通过优化单元结构以改善断开状态的隔离而不会导致导通状态的插入损耗的恶化，可以实现用于设计和制造毫米波段控制电路的高隔离开关装置 例如使用开关特性的移相器或数字衰减器。 另外，当开关微波单片集成电路（MMIC）设计为使用开关器件时，不需要使用多级并联场效应晶体管（FET）来改善隔离度，也不需要设置额外的λ/ 4 变压器输电线路，电感器或电容器附近的开关装置。 因此，可以降低芯片尺寸，可以提高集成度，并且可以提高制造成品率。 因此，可以降低制造成本。

公开(公告)号：US20080129427A1

公开(公告)日：2008-06-05

申请号：US11928410

申请日：2007-10-30

申请人： Jae Kyoung MUN ,  Hae Cheon Kim ,  Dong Young Kim ,  Jong Won Lim ,  Ho Kyun Ahn ,  Hyun Kyu Yu

发明人： Jae Kyoung MUN ,  Hae Cheon Kim ,  Dong Young Kim ,  Jong Won Lim ,  Ho Kyun Ahn ,  Hyun Kyu Yu

IPC分类号： H01P1/10

CPC分类号： H01P1/15

摘要： Provided is a high-isolation switching device for a millimeter-wave band control circuit. By optimizing a cell structure to improve the isolation of an off-state without deteriorating the insertion loss of an on-state, it is possible to implement a high-isolation switching device useful in the design and manufacture of a millimeter-wave band control circuit such as a phase shifter or digital attenuator using switching characteristics. In addition, when a switch microwave monolithic integrated circuit (MMIC) is designed to use the switching device, it is not necessary to use a multi-stage shunt field effect transistor (FET) to improve isolation, nor to dispose an additional λ/4 transformer transmission line, inductor or capacitor near the switching device. Thus, chip size can be reduced, degree of integration can be enhanced, and manufacturing yield can be increased. Consequently, it is possible to reduce manufacturing cost.

摘要翻译： 提供了一种用于毫米波段控制电路的高隔离开关装置。 通过优化单元结构以改善断开状态的隔离而不会导致导通状态的插入损耗的恶化，可以实现用于设计和制造毫米波段控制电路的高隔离开关装置 例如使用开关特性的移相器或数字衰减器。 另外，当开关微波单片集成电路（MMIC）被设计为使用开关器件时，不需要使用多级并联场效应晶体管（FET）来改善隔离度，也不需要配置额外的λ/ 4 变压器输电线路，电感器或电容器附近的开关装置。 因此，可以降低芯片尺寸，可以提高集成度，并且可以提高制造成品率。 因此，可以降低制造成本。