公开(公告)号：US20120009347A1

公开(公告)日：2012-01-12

申请号：US12831731

申请日：2010-07-07

申请人： Dongsuh Lee ,  Weijie Wang ,  William N. Sterling ,  Sam H. Kim ,  Soo Young Choi ,  Beom Soo Park ,  Beom Soo Kim ,  Qunhua Wang

发明人： Dongsuh Lee ,  Weijie Wang ,  William N. Sterling ,  Sam H. Kim ,  Soo Young Choi ,  Beom Soo Park ,  Beom Soo Kim ,  Qunhua Wang

IPC分类号： C23C16/52 ,  B01F15/06 ,  C23C16/00 ,  B01F15/02

CPC分类号： B01F5/0077 ,  B01F5/0688 ,  B01F15/065 ,  B01F2015/061 ,  C23C16/45512

摘要： Embodiments of the invention generally provide a mixing block for mixing precursors and/or cleaning agent which has the advantage of maintaining the temperature and improving the mixing effect of the precursors, cleaning agent or the mixture thereof to eliminate the substrate-to-substrate variation, thereby providing improved process uniformity.

摘要翻译： 本发明的实施方案通常提供用于混合前体和/或清洁剂的混合块，其具有保持温度并改善前体，清洁剂或其混合物的混合效果以消除基材对基底变化的优点， 从而提供改进的工艺均匀性。

公开(公告)号：US20130087783A1

公开(公告)日：2013-04-11

申请号：US13630901

申请日：2012-09-28

申请人： Qunhua Wang ,  Weijie Wang ,  Young Jin Choi ,  Seon-Mee Cho ,  Yi Cui ,  Beom Soo Park ,  Soo Young Choi

发明人： Qunhua Wang ,  Weijie Wang ,  Young Jin Choi ,  Seon-Mee Cho ,  Yi Cui ,  Beom Soo Park ,  Soo Young Choi

IPC分类号： H01L21/316 ,  H01L21/31 ,  H01L29/786

CPC分类号： H01L21/31 ,  C23C16/24 ,  C23C16/345 ,  C23C16/401 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/02675 ,  H01L29/66757 ,  H01L29/786 ,  H01L29/7869 ,  H01L2021/775

摘要： Embodiments of the disclosure generally provide methods of forming a silicon containing layers in TFT devices. The silicon can be used to form the active channel in a LTPS TFT or be utilized as an element in a gate dielectric layer, a passivation layer or even an etch stop layer. The silicon containing layer is deposited by a vapor deposition process whereby an inert gas, such as argon, is introduced along with the silicon precursor. The inert gas functions to drive out weak, dangling silicon-hydrogen bonds or silicon-silicon bonds so that strong silicon-silicon or silicon-oxygen bonds remain to form a substantially hydrogen free silicon containing layer.

摘要翻译： 本公开的实施例通常提供在TFT器件中形成含硅层的方法。 硅可用于在LTPS TFT中形成有源沟道，或者用作栅极介电层，钝化层或甚至蚀刻停止层中的元素。 通过气相沉积工艺沉积含硅层，由此惰性气体如氩气与硅前体一起引入。 惰性气体起到驱除弱的，悬挂的硅 - 氢键或硅 - 硅键的作用，使得强硅硅或硅 - 氧键保留以形成基本上不含氢的含硅层。

公开(公告)号：US09287137B2

公开(公告)日：2016-03-15

申请号：US13630901

申请日：2012-09-28

申请人： Qunhua Wang ,  Weijie Wang ,  Young Jin Choi ,  Seon-Mee Cho ,  Yi Cui ,  Beom Soo Park ,  Soo Young Choi

发明人： Qunhua Wang ,  Weijie Wang ,  Young Jin Choi ,  Seon-Mee Cho ,  Yi Cui ,  Beom Soo Park ,  Soo Young Choi

IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L21/316 ,  H01L29/786 ,  H01L21/31 ,  H01L21/02 ,  C23C16/24 ,  C23C16/34 ,  C23C16/40 ,  C23C16/505 ,  C23C16/56 ,  H01L29/66 ,  H01L21/77

CPC分类号： H01L21/31 ,  C23C16/24 ,  C23C16/345 ,  C23C16/401 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/02675 ,  H01L29/66757 ,  H01L29/786 ,  H01L29/7869 ,  H01L2021/775

摘要： Embodiments of the disclosure generally provide methods of forming a silicon containing layers in TFT devices. The silicon can be used to form the active channel in a LTPS TFT or be utilized as an element in a gate dielectric layer, a passivation layer or even an etch stop layer. The silicon containing layer is deposited by a vapor deposition process whereby an inert gas, such as argon, is introduced along with the silicon precursor. The inert gas functions to drive out weak, dangling silicon-hydrogen bonds or silicon-silicon bonds so that strong silicon-silicon or silicon-oxygen bonds remain to form a substantially hydrogen free silicon containing layer.

摘要翻译： 本公开的实施例通常提供在TFT器件中形成含硅层的方法。 硅可用于在LTPS TFT中形成有源沟道，或者用作栅极介电层，钝化层或甚至蚀刻停止层中的元素。 通过气相沉积工艺沉积含硅层，由此惰性气体如氩气与硅前体一起引入。 惰性气体起到驱除弱的，悬挂的硅 - 氢键或硅 - 硅键的作用，使得强硅硅或硅 - 氧键保留以形成基本上不含氢的含硅层。

公开(公告)号：US20080292811A1

公开(公告)日：2008-11-27

申请号：US11753571

申请日：2007-05-25

申请人： YOUNG-JIN CHOI ,  Soo Young Choi ,  Qunhua Wang ,  Weijie Wang

发明人： YOUNG-JIN CHOI ,  Soo Young Choi ,  Qunhua Wang ,  Weijie Wang

IPC分类号： C23C16/00 ,  H05H1/24

CPC分类号： C23C16/54 ,  C23C16/4401 ,  H01J37/32458

摘要： Methods and apparatus for improving the substrate-to-substrate uniformity of silicon-containing films deposited by vapor deposition of precursors vaporized from a liquid source on substrates in a chamber are provided. The methods include exposing a chamber to a processing step at a predetermined time that is after one substrate is processed in the chamber and is before the next substrate is processed in the chamber. In one aspect, the processing step includes introducing a flow of a silicon-containing precursor into the chamber for a period of time. In another aspect, the processing step includes exposing the chamber to a gas in the presence or absence of a plasma for a period of time.

摘要翻译： 提供了用于改善通过气相沉积从液体源在室中的基板上蒸发的前体沉积的含硅膜的基板到基板均匀性的方法和装置。 所述方法包括在室中处理一个衬底之后的预定时间并且在腔室中处理下一个衬底之前将腔室暴露于处理步骤。 在一个方面，处理步骤包括将含硅前体的流动引入室中一段时间​​。 在另一方面，所述处理步骤包括在存在或不存在等离子体的情况下将所述室暴露于气体一段时间。

公开(公告)号：US20080282982A1

公开(公告)日：2008-11-20

申请号：US12039613

申请日：2008-02-28

申请人： John M. White ,  Sanjay Yadav ,  Qunhua Wang ,  Soo Young Choi ,  Weijie Wang

发明人： John M. White ,  Sanjay Yadav ,  Qunhua Wang ,  Soo Young Choi ,  Weijie Wang

IPC分类号： C23C16/50

CPC分类号： C23C16/4485 ,  C23C16/509 ,  H01J37/321 ,  H01J37/32449

摘要： The present invention generally relates to an inductively coupled plasma apparatus. When depositing utilizing a plasma generated from a showerhead, the plasma may not be evenly distributed to the edge of the substrate. By inductively coupling plasma to the chamber in an area corresponding to the chamber walls, the plasma distribution within the chamber may be evenly distributed and deposition upon the substrate may be substantially even. By vaporizing the processing gas prior to entry into the processing chamber, the plasma may also be even and thus contribute to an even deposition on the substrate.

摘要翻译： 本发明一般涉及电感耦合等离子体装置。 当利用从喷头产生的等离子体进行沉积时，等离子体可能不均匀地分布到基板的边缘。 通过在对应于室壁的区域中将等离子体电感耦合到腔室，室内的等离子体分布可以均匀分布，并且在衬底上的沉积可以基本上均匀。 通过在进入处理室之前汽化处理气体，等离子体也可以是均匀的并且因此有助于在衬底上的均匀沉积。

公开(公告)号：US08756710B2

公开(公告)日：2014-06-17

申请号：US13601906

申请日：2012-08-31

申请人： Weijie Wang ,  Chanmin Quanmin Su

发明人： Weijie Wang ,  Chanmin Quanmin Su

IPC分类号： G01Q70/16

CPC分类号： G01Q60/38 ,  G01Q70/00 ,  G01Q70/02 ,  G01Q70/08 ,  G01Q70/14 ,  G01Q70/16 ,  G01R1/06727

摘要： Cantilever probes are formed from a multilayer structure comprising an upper substrate, a lower substrate, an interior layer, a first separation layer, and a second separation layer, wherein the first separation layer is situated between the upper substrate and the interior layer, the second separation layer is situated between the lower substrate and the interior layer, and wherein the first and the second separation layers are differentially etchable with respect to the first and the second substrates, the interior layer. The upper substrate is a first device layer from which a probe tip is formed. The interior layer is a second device layer from which a cantilever arm is formed. The lower substrate is a handle layer from which a handle, or base portion, is formed. Patterning and etching processing of any layer is isolated from the other layers by the separation layers.

摘要翻译： 悬臂探针由包括上基板，下基板，内层，第一分离层和第二分离层的多层结构形成，其中第一分离层位于上基板和内层之间，第二分离层 分离层位于下基板和内层之间，并且其中第一和第二分离层相对于第一和第二基板（内层）可差分蚀刻。 上基板是形成探针尖端的第一器件层。 内层是形成悬臂的第二装置层。 下基板是手柄层，从该手柄层形成手柄或基部。 任何层的图案化和蚀刻处理通过分离层与其他层隔离。

公开(公告)号：US08611135B2

公开(公告)日：2013-12-17

申请号：US13436053

申请日：2012-03-30

申请人： Weijie Wang ,  Rong Zhao ,  Kok Leong Desmond Loke ,  Luping Shi ,  Minghua Li

发明人： Weijie Wang ,  Rong Zhao ,  Kok Leong Desmond Loke ,  Luping Shi ,  Minghua Li

IPC分类号： G11C11/00

CPC分类号： G11C11/5678 ,  G11C13/0004 ,  G11C13/0061 ,  G11C13/0069 ,  G11C2013/0092

摘要： A method for programming a resistive memory cell is provided. The method may include providing a programming signal to the resistive memory cell. The programming signal may include an electrical pulse and a bias pulse coupled with the electrical pulse. The electrical pulse includes an electrical pulse portion, and the bias pulse includes at least two bias pulse portions, wherein the electrical pulse portion is positioned between the at least two bias pulse portions. The bias pulse includes a voltage below a threshold switching voltage of the resistive memory cell. The programming signal includes a peak voltage above the threshold switching voltage of the resistive memory cell.

摘要翻译： 提供了一种用于编程电阻式存储单元的方法。 该方法可以包括向阻性存储器单元提供编程信号。 编程信号可以包括电脉冲和与电脉冲耦合的偏置脉冲。 电脉冲包括电脉冲部分，偏置脉冲包括至少两个偏置脉冲部分，其中电脉冲部分位于至少两个偏置脉冲部分之间。 偏置脉冲包括低于电阻存储器单元的阈值切换电压的电压。 编程信号包括高于电阻存储单元的阈值切换电压的峰值电压。

公开(公告)号：US08595860B2

公开(公告)日：2013-11-26

申请号：US12345465

申请日：2008-12-29

申请人： Weijie Wang ,  Steven Nagle

发明人： Weijie Wang ,  Steven Nagle

IPC分类号： G12B21/08

CPC分类号： G01Q60/38 ,  G01Q70/10

摘要： A method of producing a probe device for a metrology instrument such as an AFM includes providing a substrate and forming a tip stock extending upwardly from the substrate. The tip stock is preferably FIB milled to form a tip of the probe device. The tip preferably has a high aspect ratio, with a height that is at least about 1 micron for performing critical dimension (e.g., deep trench) atomic force microscopy. The stock is preferably pedestal shaped having a distal end that is substantially planar which can be machined into a tip in at least less than about 2 minutes. With the preferred embodiments, the FIB milling step can be completed in substantially fewer and less complicated steps than known techniques to produce a high aspect ratio tip suitable for DT-AFM in less than about one minute.

摘要翻译： 制造诸如AFM的计量仪器的探针装置的方法包括提供基底并形成从基底向上延伸的尖端原料。 尖端坯料优选地被FIB铣削以形成探针装置的尖端。 尖端优选具有高纵横比，高度为至少约1微米，用于执行临界尺寸（例如，深沟槽）原子力显微镜。 该坯料优选为基座形状，其具有基本上为平面的远端，其可以至少小于约2分钟加工成尖端。 利用优选实施例，可以以比已知技术更少且更简单的步骤完成FIB研磨步骤，以在小于约一分钟内产生适用于DT-AFM的高纵横比尖端。

公开(公告)号：US08143310B2

公开(公告)日：2012-03-27

申请号：US13169621

申请日：2011-06-27

申请人： Weijie Wang

发明人： Weijie Wang

IPC分类号： A61K31/20

CPC分类号： A61K31/202 ,  A23L33/115 ,  A23L33/20 ,  A61K31/232 ,  A61K35/60 ,  A61K45/06 ,  C11B3/10 ,  A61K2300/00

摘要： A process for the removal of sterols, specifically cholesterol, from a triglyceride oil, preferably a marine triglyceride oil, said process comprising contacting an oil with an adsorbent, specifically TRIS YL™, clay or a mixture thereof, heating the mixture to 100° C. to 210° C., preferably 150° C. to 170° C., preferably for a time period of greater than one minute and optionally at a pressure less than 133 Pa, preferably less than 1.33 Pa.

摘要翻译： 一种从甘油三酯油，优选海洋甘油三酯油中除去甾醇，特别是胆固醇的方法，所述方法包括使油与吸附剂，特别是TRIS YL TM，粘土或其混合物接触，将混合物加热至100℃ 优选为150℃至170℃，优选为大于1分钟的时间段，并且任选地为小于133Pa，优选小于1.33Pa的压力。

公开(公告)号：US20110045555A1

公开(公告)日：2011-02-24

申请号：US12668533

申请日：2008-07-11

申请人： Jaroslav A. Kralovec ,  Weijie Wang ,  Colin James Barrow

发明人： Jaroslav A. Kralovec ,  Weijie Wang ,  Colin James Barrow

IPC分类号： C12P7/64 ,  C12P7/62

CPC分类号： C12P7/6409 ,  C11C1/045 ,  C12P7/6418 ,  C12P7/6445 ,  C12P7/6472 ,  C12P7/649 ,  Y02E50/13

摘要： The disclosed subject matter relates generally to a method for modifying oil, and specifically to a process for increasing the concentration of polyunsaturated fatty acid in an oil composition.

摘要翻译： 所公开的主题一般涉及油的改性方法，具体涉及提高油组合物中多不饱和脂肪酸浓度的方法。