公开(公告)号：US20050178748A1

公开(公告)日：2005-08-18

申请号：US11046538

申请日：2005-01-28

申请人： Douglas Buchberger ,  Daniel Hoffman ,  Olga Regelman ,  James Carducci ,  Keiji Horioka ,  Jang Yang

发明人： Douglas Buchberger ,  Daniel Hoffman ,  Olga Regelman ,  James Carducci ,  Keiji Horioka ,  Jang Yang

IPC分类号： H01J37/32 ,  B23K9/00

CPC分类号： H01J37/32091 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/3244

摘要： An overhead gas distribution electrode forming at least a portion of the ceiling of a plasma reactor has a bottom surface facing a processing zone of the reactor. The electrode includes a gas supply manifold for receiving process gas at a supply pressure at a top portion of the electrode and plural pressure-dropping cylindrical orifices extending axially relative to the electrode from the gas supply manifold at one end of each the orifice. A radial gas distribution manifold within the electrode extends radially across the electrode. Plural axially extending high conductance gas flow passages couple the opposite ends of respective ones of the plural pressure-dropping orifices to the radial gas distribution manifold. Plural high conductance cylindrical gas outlet holes are formed in the plasma-facing bottom surface of the electrode and extend axially to the radial gas distribution manifold.

摘要翻译： 形成等离子体反应器的天花板的至少一部分的顶部气体分配电极具有面向反应器的处理区域的底面。 电极包括用于在电极顶部处的供给压力下接收处理气体的气体供应歧管和在每个孔口的一端处相对于来自气体供应歧管的电极轴向延伸的多个降压圆柱形孔。 电极内的径向气体分布歧管径向延伸穿过电极。 多个轴向延伸的高电导气流通道将多个降压孔中的相应端部的相对端连接到径向气体分配歧管。 在电极的等离子体面向底面中形成多个高电导圆柱形气体出口孔，并且轴向延伸到径向气体分配歧管。

公开(公告)号：US07196283B2

公开(公告)日：2007-03-27

申请号：US11046538

申请日：2005-01-28

申请人： Douglas A. Buchberger, Jr. ,  Daniel J. Hoffman ,  Olga Regelman ,  James Carducci ,  Keiji Horioka ,  Jang Gyoo Yang

发明人： Douglas A. Buchberger, Jr. ,  Daniel J. Hoffman ,  Olga Regelman ,  James Carducci ,  Keiji Horioka ,  Jang Gyoo Yang

IPC分类号： B23K9/00

CPC分类号： H01J37/32091 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/3244

摘要： An overhead gas distribution electrode forming at least a portion of the ceiling of a plasma reactor has a bottom surface facing a processing zone of the reactor. The electrode includes a gas supply manifold for receiving process gas at a supply pressure at a top portion of the electrode and plural pressure-dropping cylindrical orifices extending axially relative to the electrode from the gas supply manifold at one end of each the orifice. A radial gas distribution manifold within the electrode extends radially across the electrode. Plural axially extending high conductance gas flow passages couple the opposite ends of respective ones of the plural pressure-dropping orifices to the radial gas distribution manifold. Plural high conductance cylindrical gas outlet holes are formed in the plasma-facing bottom surface of the electrode and extend axially to the radial gas distribution manifold.

摘要翻译： 形成等离子体反应器的天花板的至少一部分的顶部气体分配电极具有面向反应器的处理区域的底面。 电极包括用于在电极顶部处的供给压力下接收处理气体的气体供应歧管和在每个孔口的一端处相对于来自气体供应歧管的电极轴向延伸的多个降压圆柱形孔。 电极内的径向气体分布歧管径向延伸穿过电极。 多个轴向延伸的高电导气流通道将多个降压孔中的相应端部的相对端连接到径向气体分配歧管。 在电极的等离子体面向底面中形成多个高电导圆柱形气体出口孔，并且轴向延伸到径向气体分配歧管。

公开(公告)号：US07777599B2

公开(公告)日：2010-08-17

申请号：US11934197

申请日：2007-11-02

申请人： Steven C. Shannon ,  Daniel J. Hoffman ,  Matthew L. Miller ,  Olga Regelman ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Kallol Bera

发明人： Steven C. Shannon ,  Daniel J. Hoffman ,  Matthew L. Miller ,  Olga Regelman ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Kallol Bera

IPC分类号： H01P7/06 ,  H05B31/26

CPC分类号： H05H1/0081 ,  H01J37/32091 ,  H01J37/32174

摘要： Methods and apparatus for controlling characteristics of a plasma, such as the spatial distribution of RF power and plasma uniformity, are provided herein. In some embodiments, an apparatus for controlling characteristics of a plasma includes a resonator for use in conjunction with a plasma reactor, the resonator including a source resonator for receiving an RF signal having a first frequency; a return path resonator disposed substantially coaxially with, and at least partially within, the source resonator; and an outer conductor having the source resonator and the return path resonator disposed substantially coaxially with, and at least partially within, the outer conductor, the outer conductor for providing an RF ground connection.

摘要翻译： 本文提供了用于控制等离子体特性的方法和装置，例如RF功率和等离子体均匀性的空间分布。 在一些实施例中，用于控制等离子体特性的装置包括与等离子体电抗器结合使用的谐振器，所述谐振器包括用于接收具有第一频率的RF信号的源谐振器; 与所述源谐振器基本同轴并且至少部分地在所述源谐振器内设置的返回路径谐振器; 以及具有源极谐振器和返回路径谐振器的外部导体，该外部导体与外部导体大致同轴并至少部分地设置，外部导体用于提供RF接地连接。

公开(公告)号：US20090178763A1

公开(公告)日：2009-07-16

申请号：US12345821

申请日：2008-12-30

申请人： James D. Carducci ,  Olga Regelman

发明人： James D. Carducci ,  Olga Regelman

IPC分类号： H01L21/306

CPC分类号： H01J37/32633 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32477

摘要： The present invention generally comprises a showerhead insulator for electrically isolating a showerhead assembly from a processing chamber wall, a chamber liner assembly for lining a processing chamber, a lower chamber liner for lining an evacuation area of a processing chamber, and a flow equalizer for ensuring a uniform evacuation of a processing chamber. When processing a substrate within an etching chamber, the showerhead needs to be electrically isolated from ground. A showerhead insulator may insulate the showerhead from ground while also preventing plasma from entering the volume that it occupies. A chamber liner may protect the chamber walls from contamination and reduce chamber cleaning. A flow equalizer will permit processing gases to be evenly pulled into the evacuation channel rather than a disproportionate flow into the evacuation channel. A lower liner can aid in uniformly drawing the vacuum and protecting the chamber walls from contamination.

摘要翻译： 本发明通常包括用于将喷头组件与处理室壁电隔离的喷头绝缘体，用于衬里处理室的腔室衬套组件，用于衬里处理室的抽空区域的下室衬套和用于确保 均匀排出处理室。 当在蚀刻室内处理衬底时，喷头需要与地电隔离。 喷头绝缘体可以将喷头与地面隔离，同时也防止等离子体进入其占据的体积。 腔室衬垫可以保护腔室壁免受污染并减少腔室清洁。 流量均衡器将允许将处理气体均匀地拉入抽空通道，而不是不成比例的流入排气通道。 下层衬垫有助于均匀地抽真空并保护室壁免受污染。

公开(公告)号：US20090140828A1

公开(公告)日：2009-06-04

申请号：US11934197

申请日：2007-11-02

申请人： Steven C. Shannon ,  Daniel J. Hoffman ,  Matthew L. Miler ,  Olga Regelman ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Kallol Bera

发明人： Steven C. Shannon ,  Daniel J. Hoffman ,  Matthew L. Miler ,  Olga Regelman ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Kallol Bera

IPC分类号： H01P7/04

CPC分类号： H05H1/0081 ,  H01J37/32091 ,  H01J37/32174

摘要： Methods and apparatus for controlling characteristics of a plasma, such as the spatial distribution of RF power and plasma uniformity, are provided herein. In some embodiments, an apparatus for controlling characteristics of a plasma includes a resonator for use in conjunction with a plasma reactor, the resonator including a source resonator for receiving an RF signal having a first frequency; a return path resonator disposed substantially coaxially with, and at least partially within, the source resonator; and an outer conductor having the source resonator and the return path resonator disposed substantially coaxially with, and at least partially within, the outer conductor, the outer conductor for providing an RF ground connection.

摘要翻译： 本文提供了用于控制等离子体特性的方法和装置，例如RF功率和等离子体均匀性的空间分布。 在一些实施例中，用于控制等离子体特性的装置包括与等离子体电抗器结合使用的谐振器，所述谐振器包括用于接收具有第一频率的RF信号的源谐振器; 与所述源谐振器基本同轴并且至少部分地在所述源谐振器内设置的返回路径谐振器; 以及具有源极谐振器和返回路径谐振器的外部导体，该外部导体与外部导体大致同轴并至少部分地设置，外部导体用于提供RF接地连接。

公开(公告)号：US08876024B2

公开(公告)日：2014-11-04

申请号：US11972072

申请日：2008-01-10

申请人： James D. Carducci ,  Olga Regelman ,  Kallol Bera ,  Douglas A. Buchberger ,  Paul Brillhart

发明人： James D. Carducci ,  Olga Regelman ,  Kallol Bera ,  Douglas A. Buchberger ,  Paul Brillhart

IPC分类号： B05B1/14 ,  C23C16/455 ,  H01J37/32 ,  C23C16/44

CPC分类号： H01J37/3244 ,  B32B43/00 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45591 ,  H01J37/32449 ,  H01J37/32724 ,  H01J2237/3343 ,  Y10T29/49815

摘要： The present invention generally comprises a heated showerhead assembly that may be used to supply processing gases into a processing chamber. The processing chamber may be an etching chamber. When processing gas is evacuated from the processing chamber, the uniform processing of the substrate may be difficult. As the processing gas is pulled away from the substrate and towards the vacuum pump, the plasma, in the case of etching, may not be uniform across the substrate. Uneven plasma may lead to uneven etching. To prevent uneven etching, the showerhead assembly may be separated into two zones each having independently controllable gas introduction and temperature control. The first zone corresponds to the perimeter of the substrate while the second zone corresponds to the center of the substrate. By independently controlling the temperature and the gas flow through the showerhead zones, etching uniformity of the substrate may be increased.

摘要翻译： 本发明通常包括可用于将处理气体供应到处理室中的加热喷头组件。 处理室可以是蚀刻室。 当处理气体从处理室排出时，衬底的均匀处理可能是困难的。 当处理气体从衬底被拉离并且朝向真空泵时，在蚀刻的情况下，等离子体在衬底上可能不均匀。 不均匀的等离子体可能导致不均匀的蚀刻。 为了防止不均匀的蚀刻，喷头组件可以分成两个区域，每个区域具有独立可控的气体引入和温度控制。 第一区域对应于衬底的周边，而第二区域对应于衬底的中心。 通过独立地控制温度和通过喷头区域的气体流动，可以增加基板的蚀刻均匀性。

公开(公告)号：US20090179085A1

公开(公告)日：2009-07-16

申请号：US11972072

申请日：2008-01-10

申请人： JAMES D. CARDUCCI ,  Olga Regelman ,  Kallol Bera ,  Douglas A. Buchberger ,  Paul Brillhart

发明人： JAMES D. CARDUCCI ,  Olga Regelman ,  Kallol Bera ,  Douglas A. Buchberger ,  Paul Brillhart

IPC分类号： B05B1/24 ,  B05B1/14

CPC分类号： H01J37/3244 ,  B32B43/00 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45591 ,  H01J37/32449 ,  H01J37/32724 ,  H01J2237/3343 ,  Y10T29/49815

摘要： The present invention generally comprises a heated showerhead assembly that may be used to supply processing gases into a processing chamber. The processing chamber may be an etching chamber. When processing gas is evacuated from the processing chamber, the uniform processing of the substrate may be difficult. As the processing gas is pulled away from the substrate and towards the vacuum pump, the plasma, in the case of etching, may not be uniform across the substrate. Uneven plasma may lead to uneven etching. To prevent uneven etching, the showerhead assembly may be separated into two zones each having independently controllable gas introduction and temperature control. The first zone corresponds to the perimeter of the substrate while the second zone corresponds to the center of the substrate. By independently controlling the temperature and the gas flow through the showerhead zones, etching uniformity of the substrate may be increased.

摘要翻译： 本发明通常包括可用于将处理气体供应到处理室中的加热喷头组件。 处理室可以是蚀刻室。 当处理气体从处理室排出时，衬底的均匀处理可能是困难的。 当处理气体从衬底被拉离并且朝向真空泵时，在蚀刻的情况下，等离子体在衬底上可能不均匀。 不均匀的等离子体可能导致不均匀的蚀刻。 为了防止不均匀的蚀刻，喷头组件可以分成两个区域，每个区域具有独立可控的气体引入和温度控制。 第一区域对应于衬底的周边，而第二区域对应于衬底的中心。 通过独立地控制温度和通过喷头区域的气体流动，可以增加基板的蚀刻均匀性。