公开(公告)号：US20070153155A1

公开(公告)日：2007-07-05

申请号：US11619370

申请日：2007-01-03

申请人： Du-hwan CHUNG ,  Seok-won LEE ,  Choong-sik KIM

发明人： Du-hwan CHUNG ,  Seok-won LEE ,  Choong-sik KIM

IPC分类号： G02F1/1333 ,  G02F1/1335

CPC分类号： G02B6/0085 ,  G02B6/0031

摘要： A liquid crystal display (“LCD”) includes an LCD panel, a light guiding plate disposed beneath the LCD panel, a light source part disposed at a lateral side of the light guiding plate, a cover comprising a first surface parallel with the light guiding plate and a second surface extending from the first surface, and accommodating the light guiding plate and the light source part, and a light source cover which encompasses the light source part, reflects light from the light source part to the light guiding plate, and comprises an expansion part protruded toward the cover to contact the cover.

摘要翻译： 液晶显示器（“LCD”）包括LCD面板，设置在LCD面板下方的导光板，设置在导光板侧面的光源部分，盖子包括与导光板平行的第一表面 板和从第一表面延伸的第二表面，并且容纳导光板和光源部，以及包围光源部的光源盖，将来自光源部的光反射到导光板，并且包括 一个膨胀部件向盖子突出以接触盖子。

公开(公告)号：US20140054787A1

公开(公告)日：2014-02-27

申请号：US13973627

申请日：2013-08-22

申请人： Dongseog EUN ,  Young-Ho LEE ,  Joonhee LEE ,  Seok-won LEE ,  Yoocheol SHIN

发明人： Dongseog EUN ,  Young-Ho LEE ,  Joonhee LEE ,  Seok-won LEE ,  Yoocheol SHIN

IPC分类号： H01L23/498

CPC分类号： H01L23/498 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/441 ,  H01L21/76805 ,  H01L21/76877 ,  H01L23/49844 ,  H01L23/5226 ,  H01L27/11548 ,  H01L27/11551 ,  H01L27/1157 ,  H01L27/11575 ,  H01L27/11578 ,  H01L27/11582 ,  H01L27/2481 ,  H01L2924/0002 ,  H01L2924/0001 ,  H01L2924/00

摘要： Provided are methods of forming a stack of electrodes and three-dimensional semiconductor devices fabricated thereby. The device may include electrodes sequentially stacked on a substrate to constitute an electrode structure. each of the electrodes may include a connection portion protruding horizontally and outward from a sidewall of one of the electrodes located thereon and an aligned portion having a sidewall coplanar with that of one of the electrodes located thereon or thereunder. Here, at least two of the electrodes provided vertically adjacent to each other may be provided in such a way that the aligned portions thereof have sidewalls that are substantially aligned to be coplanar with each other.

摘要翻译： 提供了形成由此制造的电极堆叠和三维半导体器件的方法。 该装置可以包括依次层叠在基板上以构成电极结构的电极。 每个电极可以包括从位于其上的一个电极的侧壁水平和向外突出的连接部分和具有与位于其上的电极之一的侧壁共面的对准部分。 这里，彼此垂直相邻设置的电极中的至少两个可以以这样的方式设置，使得其对准的部分具有基本上对准以彼此共面的侧壁。

公开(公告)号：US20160099170A1

公开(公告)日：2016-04-07

申请号：US14943532

申请日：2015-11-17

申请人： Dongseog EUN ,  Young-Ho LEE ,  Joonhee LEE ,  Seok-won LEE ,  Yoocheol SHIN

发明人： Dongseog EUN ,  Young-Ho LEE ,  Joonhee LEE ,  Seok-won LEE ,  Yoocheol SHIN

IPC分类号： H01L21/768 ,  H01L27/24 ,  H01L21/3213 ,  H01L27/115 ,  H01L21/311

CPC分类号： H01L23/498 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/441 ,  H01L21/76805 ,  H01L21/76877 ,  H01L23/49844 ,  H01L23/5226 ,  H01L27/11548 ,  H01L27/11551 ,  H01L27/1157 ,  H01L27/11575 ,  H01L27/11578 ,  H01L27/11582 ,  H01L27/2481 ,  H01L2924/0002 ,  H01L2924/0001 ,  H01L2924/00

摘要： Provided are methods of forming a stack of electrodes and three-dimensional semiconductor devices fabricated thereby. The device may include electrodes sequentially stacked on a substrate to constitute an electrode structure. each of the electrodes may include a connection portion protruding horizontally and outward from a sidewall of one of the electrodes located thereon and an aligned portion having a sidewall coplanar with that of one of the electrodes located thereon or thereunder. Here, at least two of the electrodes provided vertically adjacent to each other may be provided in such a way that the aligned portions thereof have sidewalls that are substantially aligned to be coplanar with each other.

摘要翻译： 提供了形成由此制造的电极堆叠和三维半导体器件的方法。 该装置可以包括依次层叠在基板上以构成电极结构的电极。 每个电极可以包括从位于其上的一个电极的侧壁水平和向外突出的连接部分和具有与位于其上的电极之一的侧壁共面的对准部分。 这里，彼此垂直相邻设置的电极中的至少两个可以以这样的方式设置，使得其对准的部分具有基本上对准以彼此共面的侧壁。

公开(公告)号：US20150235939A1

公开(公告)日：2015-08-20

申请号：US14588506

申请日：2015-01-02

申请人： Sunyeong LEE ,  Kyoung-Hoon KIM ,  Jin-Woo PARK ,  SeungWoo PAEK ,  Seok-won LEE ,  Taekeun CHO

发明人： Sunyeong LEE ,  Kyoung-Hoon KIM ,  Jin-Woo PARK ,  SeungWoo PAEK ,  Seok-won LEE ,  Taekeun CHO

IPC分类号： H01L23/528 ,  H01L27/115

CPC分类号： H01L27/11582 ,  H01L27/11519 ,  H01L27/11526 ,  H01L27/11548 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11573 ,  H01L27/11575 ,  H01L27/11578 ,  H01L2224/32145

摘要： Three-dimensional (3D) semiconductor devices are provided. The 3D semiconductor device includes a plurality of dummy pillars penetrating each cell pad of an electrode structure and the electrode structure disposed under each cell pad. Insulating patterns of a mold stack structure for formation of the electrode structure may be supported by the plurality of dummy pillars, so transformation and contact of the insulating patterns may be minimized or prevented.

摘要翻译： 提供三维（3D）半导体器件。 3D半导体器件包括穿过电极结构的每个电池衬垫的多个虚拟柱和设置在每个电池衬垫下方的电极结构。 用于形成电极结构的模具堆叠结构的绝缘图案可以由多个虚拟支柱支撑，因此可以最小化或防止绝缘图案的变形和接触。

公开(公告)号：US20130193395A1

公开(公告)日：2013-08-01

申请号：US13655634

申请日：2012-10-19

申请人： Seok-won LEE

发明人： Seok-won LEE

IPC分类号： H01L27/24

CPC分类号： H01L27/249 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1226

摘要： According to example embodiments, a variable resistance memory device may include memory cells, in which contact areas between word lines and a variable resistance layer are almost constant. The variable resistance memory device may include a vertical electrode on a substrate, horizontal electrode layers and insulating layers sequentially and alternately stacked on the substrate. The horizontal electrode layers and the insulating layers may be adjacent to the vertical electrode. The variable resistance layer may be between the vertical electrode the horizontal electrode layers. A thickness of one of the horizontal electrode layers adjacent to the substrate may be thickness than a thickness of an other of the horizontal electrode layers that is spaced apart from the substrate.

摘要翻译： 根据示例性实施例，可变电阻存储器件可以包括存储单元，其中字线和可变电阻层之间的接触区域几乎是恒定的。 可变电阻存储器件可以包括在衬底上的垂直电极，顺序地和交替地堆叠在衬底上的水平电极层和绝缘层。 水平电极层和绝缘层可以与垂直电极相邻。 可变电阻层可以在垂直电极与水平电极层之间。 与基板相邻的水平电极层之一的厚度可以比与衬底间隔开的另一个水平电极层的厚度厚。