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    IMAGE SENSOR WITH MULTIPLE THICKNESS ANTI-RELFECTIVE COATING LAYERS
    5.
    发明申请
    IMAGE SENSOR WITH MULTIPLE THICKNESS ANTI-RELFECTIVE COATING LAYERS 审中-公开
    具有多个厚度抗反射涂层的图像传感器

    公开(公告)号：US20090302409A1

    公开(公告)日：2009-12-10

    申请号：US12133299

    申请日：2008-06-04

    申请人： Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  Hidetoshi Nozaki ,  Howard E. Rhodes

    发明人： Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  Hidetoshi Nozaki ,  Howard E. Rhodes

    IPC分类号： H01L31/00 ,  H01L21/00

    CPC分类号： H01L27/1463 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14629 ,  H01L27/14645

    摘要： An image sensor includes a substrate having a surface at which incident light is received. A pixel array is formed over and within the substrate. The pixel array includes a first and a second pixel arranged to receive light of different colors. The first pixel includes a photosensitive region formed in the substrate and has a first anti-reflective coating (ARC) layer formed over the photosensitive region. The first ARC layer has a first thickness that produces destructive interference above the first ARC layer in response to the incident light. The second pixel includes a photosensitive region formed in the substrate, and a second ARC layer formed over the photosensitive region that produces destructive interference above the second ARC layer in response to the incident light.

    摘要翻译： 图像传感器包括具有接收入射光的表面的基板。 在衬底之上和之内形成像素阵列。 像素阵列包括布置成接收不同颜色的光的第一和第二像素。 第一像素包括形成在基板中并且在光敏区域上形成的第一抗反射涂层（ARC）层的感光区域。 第一ARC层具有响应于入射光而在第一ARC层上方产生破坏性干扰的第一厚度。 第二像素包括形成在基板中的感光区域和形成在光敏区域上的响应于入射光而在第二ARC层上方产生相消干涉的第二ARC层。

    Circuit and photo sensor overlap for backside illumination image sensor
    7.
    发明授权
    Circuit and photo sensor overlap for backside illumination image sensor 有权
    背面照明图像传感器的电路和光电传感器重叠

    公开(公告)号：US08228411B2

    公开(公告)日：2012-07-24

    申请号：US13327592

    申请日：2011-12-15

    申请人： Tiejun Dai ,  Hsin-Chih Tai ,  Sohei Manabe ,  Hidetoshi Nozaki ,  Howard E. Rhodes

    发明人： Tiejun Dai ,  Hsin-Chih Tai ,  Sohei Manabe ,  Hidetoshi Nozaki ,  Howard E. Rhodes

    IPC分类号： H04N3/14 ,  H04N5/335 ,  H01L31/062

    CPC分类号： H01L27/14603 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14641

    摘要： A method of operation of a backside illuminated (BSI) pixel array includes acquiring an image signal with a first photosensitive region of a first pixel within the BSI pixel array. The image signal is generated in response to light incident upon a backside of the first pixel. The image signal acquired by the first photosensitive region is transferred to pixel circuitry of the first pixel disposed on a frontside of the first pixel opposite the backside. The pixel circuitry at least partially overlaps the first photosensitive region of the first pixel and extends over die real estate above a second photosensitive region of a second pixel adjacent to the first pixel such that the second pixel donates die real estate unused by the second pixel to the first pixel to accommodate larger pixel circuitry than would fit within the first pixel.

    摘要翻译： 背面照明（BSI）像素阵列的操作方法包括用BSI像素阵列内的第一像素的第一感光区域获取图像信号。 响应于入射在第一像素的背面的光产生图像信号。 由第一感光区域获取的图像信号被传送到设置在与背面相对的第一像素的前侧上的第一像素的像素电路。 像素电路至少部分地与第一像素的第一光敏区域重叠，并且延伸超过与第一像素相邻的第二像素的第二光敏区域上方的裸片空间，使得第二像素将第二像素未使用的裸片空间提供给 第一像素以适应比装配在第一像素内的更大的像素电路。

    CIRCUIT AND PHOTO SENSOR OVERLAP FOR BACKSIDE ILLUMINATION IMAGE SENSOR
    8.
    发明申请
    CIRCUIT AND PHOTO SENSOR OVERLAP FOR BACKSIDE ILLUMINATION IMAGE SENSOR 有权
    用于背光照明图像传感器的电路和照片传感器覆盖

    公开(公告)号：US20120086844A1

    公开(公告)日：2012-04-12

    申请号：US13327592

    申请日：2011-12-15

    申请人： Tiejun Dai ,  Hsin-Chih Tai ,  Sohei Manabe ,  Hidetoshi Nozaki ,  Howard E. Rhodes

    发明人： Tiejun Dai ,  Hsin-Chih Tai ,  Sohei Manabe ,  Hidetoshi Nozaki ,  Howard E. Rhodes

    IPC分类号： H04N5/335

    CPC分类号： H01L27/14603 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14641

    摘要： A method of operation of a backside illuminated (BSI) pixel array includes acquiring an image signal with a first photosensitive region of a first pixel within the BSI pixel array. The image signal is generated in response to light incident upon a backside of the first pixel. The image signal acquired by the first photosensitive region is transferred to pixel circuitry of the first pixel disposed on a frontside of the first pixel opposite the backside. The pixel circuitry at least partially overlaps the first photosensitive region of the first pixel and extends over die real estate above a second photosensitive region of a second pixel adjacent to the first pixel such that the second pixel donates die real estate unused by the second pixel to the first pixel to accommodate larger pixel circuitry than would fit within the first pixel.

    摘要翻译： 背面照明（BSI）像素阵列的操作方法包括用BSI像素阵列内的第一像素的第一感光区域获取图像信号。 响应于入射在第一像素的背面的光产生图像信号。 由第一感光区域获取的图像信号被传送到设置在与背面相对的第一像素的前侧上的第一像素的像素电路。 像素电路至少部分地与第一像素的第一光敏区域重叠，并且延伸超过与第一像素相邻的第二像素的第二光敏区域上方的裸片空间，使得第二像素将第二像素未使用的裸片空间提供给 第一像素以适应比装配在第一像素内的更大的像素电路。

    Circuit and photo sensor overlap for backside illumination image sensor
    9.
    发明申请
    Circuit and photo sensor overlap for backside illumination image sensor 有权
    背面照明图像传感器的电路和光电传感器重叠

    公开(公告)号：US20090200624A1

    公开(公告)日：2009-08-13

    申请号：US12053476

    申请日：2008-03-21

    申请人： Tiejun Dai ,  Hsin-Chih Tai ,  Sohei Manabe ,  Hidetoshi Nozaki ,  Howard E. Rhodes

    发明人： Tiejun Dai ,  Hsin-Chih Tai ,  Sohei Manabe ,  Hidetoshi Nozaki ,  Howard E. Rhodes

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14603 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14641

    摘要： A backside illuminated (“BSI”) imaging sensor pixel includes a photodiode region and pixel circuitry. The photodiode region is disposed within a semiconductor die for accumulating an image charge in response to light incident upon a backside of the BSI imaging sensor pixel. The pixel circuitry includes transistor pixel circuitry disposed within the semiconductor die between a frontside of the semiconductor die and the photodiode region. At least a portion of the pixel circuitry overlaps the photodiode region.

    摘要翻译： 背面照明（“BSI”）成像传感器像素包括光电二极管区域和像素电路。 光电二极管区域设置在半导体管芯内，用于响应于入射到BSI成像传感器像素的背面的光积累图像电荷。 像素电路包括设置在半导体管芯内的半导体管芯的前侧和光电二极管区域之间的晶体管像素电路。 像素电路的至少一部分与光电二极管区域重叠。