Polishing machine and a polishing method for a substrate

    公开(公告)号:US11465254B2

    公开(公告)日:2022-10-11

    申请号:US16787892

    申请日:2020-02-11

    Abstract: One object is to provide a polishing machine and a polishing method capable of improving a processing accuracy on the surface of an object. A method of polishing an object is provided. Such a method comprises: a first step of polishing an object by moving the object and a first polishing pad having a smaller dimension than that of the object relative to each other while the first polishing pad is made to contact the object, a second step of polishing the object, after the first step of polishing, by moving the object and a second polishing pad having a larger dimension than that of the object relative to each other while the second polishing pad is made to contact the object, and a step of detecting the state of the surface of the object before the first step of polishing.

    Polishing apparatus
    2.
    发明授权

    公开(公告)号:US10293455B2

    公开(公告)日:2019-05-21

    申请号:US15150279

    申请日:2016-05-09

    Abstract: A polishing apparatus has a polishing pad, a top ring for holding a semiconductor wafer, and a vertical movement mechanism operable to move the top ring in a vertical direction. The polishing apparatus also has a distance measuring sensor operable to detect a position of the top ring when a lower surface of the top ring is brought into contact with the polishing pad, and a controller operable to calculate an optimal position of the top ring to polish the semiconductor wafer based on the position detected by the distance measuring sensor. The vertical movement mechanism includes a ball screw mechanism operable to move the top ring to the optimal position.

    POLISHING APPARATUS AND POLISHING METHOD
    5.
    发明申请
    POLISHING APPARATUS AND POLISHING METHOD 审中-公开
    抛光装置和抛光方法

    公开(公告)号:US20170057049A1

    公开(公告)日:2017-03-02

    申请号:US15248112

    申请日:2016-08-26

    Abstract: A polishing apparatus includes a polishing table for supporting a polishing pad and a substrate holding device for pressing a substrate against the polishing pad. The substrate holding device includes an elastic film to form multiple pressure chambers to press the substrate, and a pressure control unit controlling pressure of the pressure chambers. The pressure control unit includes a first flow path connected to a first pressure chamber, and first and second pressure regulation mechanisms. The pressure control unit performs switching control from first pressure regulation mechanism to second pressure regulation mechanism when a set pressure within first pressure chamber reaches a first threshold value. Then, the pressure control unit performs switching control from second pressure regulation mechanism to first pressure regulation mechanism when the set pressure within the first pressure chamber reaches a second threshold value lower than the first threshold value.

    Abstract translation: 抛光装置包括用于支撑抛光垫的抛光台和用于将基板压靠在抛光垫上的基板保持装置。 基板保持装置包括形成多个压力室以按压基板的弹性膜,以及控制压力室压力的压力控制单元。 压力控制单元包括连接到第一压力室的第一流路,以及第一和第二压力调节机构。 当第一压力室内的设定压力达到第一阈值时,压力控制单元执行从第一压力调节机构到第二压力调节机构的切换控制。 然后,当第一压力室内的设定压力达到低于第一阈值的第二阈值时,压力控制单元进行从第二压力调节机构到第一压力调节机构的切换控制。

    Substrate processing apparatus and substrate processing method

    公开(公告)号:US12211733B2

    公开(公告)日:2025-01-28

    申请号:US17759932

    申请日:2021-01-13

    Abstract: A substrate processing apparatus includes a table, a pad holder, an elevating mechanism, and at least three centering mechanisms. The table is for supporting a substrate. The pad holder is for holding a polishing pad for polishing the substrate supported by the table. The elevating mechanism is for elevating the pad holder with respect to the substrate. The at least three centering mechanisms are for pushing the substrate supported by the table in a center direction of the table to position the substrate. The at least three centering mechanisms each include a rotation shaft arranged in a peripheral area of the table and a centering member mounted to the rotation shaft.

    Substrate processing apparatus and substrate processing method

    公开(公告)号:US11911872B2

    公开(公告)日:2024-02-27

    申请号:US17166521

    申请日:2021-02-03

    Abstract: Polishing uniformity of a surface to be polished of a substrate is improved by appropriately according with a state of the surface to be polished during polishing. A substrate processing apparatus includes a table 100 for supporting a substrate WF, a pad holder 226 for holding a polishing pad 222 for polishing the substrate WF supported by the table 100, an elevating mechanism for elevating the pad holder 226 with respect to the substrate WF, a swing mechanism for swinging the pad holder 226 in a radial direction of the substrate WF, supporting members 300A and 300B for supporting the polishing pad 222 swung to outside the table 100 by the swing mechanism, and driving mechanisms 310 and 320 for adjusting at least one of a height and a distance to the substrate WF of the supporting member 300 while polishing the substrate WF.

    Substrate processing apparatus and substrate processing method

    公开(公告)号:US11735457B2

    公开(公告)日:2023-08-22

    申请号:US17126447

    申请日:2020-12-18

    CPC classification number: H01L21/681 B24B37/20 H01L21/30625 H01L22/10

    Abstract: To improve uniformity in polishing of a polished surface of a substrate regardless of a tolerance of a diameter of the substrate. A substrate processing apparatus includes a table 100, a pad holder 226, a swing mechanism, a supporting member 300A, 300B, a measuring instrument 400, and a driving mechanism 320. The table 100 supports a substrate WF. The pad holder 226 holds a polishing pad 222. The polishing pad 222 polishes the substrate WF supported to the table 100. The swing mechanism swings the pad holder 226. The supporting member 300A, 300B supports the polishing pad 222 swung to outside the table 100 by the swing mechanism. The measuring instrument 400 is configured to measure a diameter of the substrate WF. The driving mechanism 320 adjusts a position of the supporting member 300A, 300B with respect to the substrate WF supported to the table 100 according to the diameter of the substrate WF measured by the measuring instrument 400.

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