摘要:
A data write method of a nonvolatile memory device is provided which includes receiving write data to be stored in selected memory cells; reading data stored in the selected memory cells; processing the write data according to a plurality of data modulation manners to generate a plurality of modulated data values; calculating the number of flip bits and the number of switching bits when the write data and the plurality of modulated data values are overwritten on the selected memory cells, each flip bit indicating that a logical value of a selected memory cell is reversed and each switching bit indicating that a logical value of a selected memory cell is switched from a first logical value to a second logical value; and selecting one of the write data and the plurality of modulated data values according to calculating the number of flip bits and the number of switching bits.
摘要:
A method of programming data in a nonvolatile memory device comprises receiving program data to be programmed in selected memory cells of the nonvolatile memory device, reading data from the selected memory cells, encoding the program data using at least one encoding scheme selected from among multiple encoding schemes according to a comparison of the program data and the read data, generating flag data including encoding information, and programming the encoded program data and the flag data in the selected memory cells.
摘要:
A nonvolatile random access memory device includes a plurality of memory cells configured to store data therein, a plurality of reference cells separate from the memory cells, the reference cells each configured to output a corresponding reference cell signal, and a read/write circuit. The read/write circuit is configured to generate from the reference cell signals a reference signal which is variable to have a plurality of different reference levels. The read/write circuit is further configured to identify, in response to the reference signal, a logic state among a first logic state and a second logic state for each of one or more selected memory cells, and to output read data corresponding to the identified logic state.